AOK30B60D1
600V, 30A Alpha IGBT
TM
with Diode
General Description Product Summary
V
CE
I
C
(T
C
=100°C) 30A
V
CE(sat)
(T
C
=25°C) 1.85V
Symbol
The Alpha IGBT
TM
line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations.The soft co-
packaged diode is targeted for minimal losses in Welding
machines, Solar Inverter and UPS applications.
Units
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOK30B60D1
600V
G
C
E
Top View
AOK30B60D1
TO-247
G
CE
Symbol
V
CE
V
GE
V
GE
Spike V
SPIKE
I
CM
I
LM
Diode Pulsed Current, Limited by T
Jmax
I
FM
t
SC
T
J
, T
STG
T
L
Symbol
R
θ
R
θ
JC
R
θ
JC
Continuous Diode
Forward Current
T
C
=25°C I
F
30 A
T
C
=100°C
Continuous Collector
Current
T
C
=25°C
15
60
30
I
C
Turn off SOA, V
CE
≤ 600V, Limited by T
Jmax
Pulsed Collector Current, Limited by T
Jmax
Gate-Emitter Voltage
T
C
=100°C
W
Units
A
A
Parameter
±20 V
96 A
A
500ns 24 V
96
°C/W40
83
°C
96
AOK30B60D1
Maximum Junction-to-Ambient
10 µs
T
C
=100°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds °C
Power Dissipation P
D
Short circuit withstanding time V
GE
= 15V, V
CE
≤
400V, Delay between short circuits ≥ 1.0s,
T
C
=25°C
Junction and Storage Temperature Range
T
C
=25°C
Thermal Characteristics
300
-55 to 150
208
V
Units
Parameter
AOK30B60D1
Collector-Emitter Voltage 600
°C/W1.7
Maximum Diode Junction-to-Case
°C/W0.6Maximum IGBT Junction-to-Case
G
C
E
Top View
AOK30B60D1
TO-247
G
CE
Rev.3.0: Nov 2013 www.aosmd.com Page 1 of 9
AOK30B60D1
Symbol Min Typ Max Units
BV
CES
Collector-Emitter Breakdown Voltage 600 - - V
T
J
=25°C - 1.85 2.4
T
J
=125°C - 2.2 -
T
J
=150°C - 2.3 -
T
J
=25°C - 1.47 2
T
J
=125°C - 1.44 -
T
J
=150°C - 1.42 -
V
GE(th)
Gate-Emitter Threshold Voltage - 5.6 - V
T
J
=25°C - - 10
T
J
=125°C - - 400
T
J
=150°C - - 2000
I
GES
Gate-Emitter leakage current - - ±100 nA
g
FS
- 13 - S
C
ies
- 1324 - pF
C
oes
- 153 - pF
C
res
- 5 - pF
Q
g
- 34 - nC
Q
ge
- 14.3 - nC
Q
gc
- 10.7 - nC
I
C(SC)
- 96 - A
R
g
- 1.3 - Ω
t
D(on)
- 20 - ns
t
r
-
44
-
ns
Turn-On Rise Time
Turn-On DelayTime
T
J
=25°C
Gate to Collector Charge
Gate to Emitter Charge V
GE
=15V, V
CE
=480V, I
C
=30A
SWITCHING PARAMETERS, (Load Iductive, T
J
=25°C)
Short circuit collector current, Max.
1000 short circuits, Delay between
short circuits ≥ 1.0s
V
GE
=15V, V
CE
=400V, R
G
=25Ω
Total Gate Charge
Gate resistance f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Reverse Transfer Capacitance
V
GE
=0V, V
CE
=25V, f=1MHz
V
CE
=20V, I
C
=30A
V
CE
=0V, V
GE
=±20V
Forward Transconductance
V
CE(sat)
I
C
=1mA, V
GE
=0V, T
J
=25°C
V
GE
=15V, I
C
=26A V
V
CE
=600V, V
GE
=0V
V
GE
=0V, I
C
=15A V
Collector-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
I
CES
Zero Gate Voltage Collector Current
V
F
Diode Forward Voltage
DYNAMIC PARAMETERS
µA
V
CE
=5V, I
C
=1mA
t
r
-
44
-
ns
t
D(off)
- 58 - ns
t
f
- 16 - ns
E
on
- 1.1 - mJ
E
off
- 0.24 - mJ
E
total
- 1.34 - mJ
t
rr
- 120 - ns
Q
rr
- 0.5 - µC
I
rm
- 7 - A
t
D(on)
- 21 - ns
t
r
- 45 - ns
t
D(off)
- 70 - ns
t
f
- 19 - ns
E
on
- 1.3 - mJ
E
off
- 0.46 - mJ
E
total
- 1.76 - mJ
t
rr
- 206 - ns
Q
rr
- 0.9 - µC
I
rm
- 9 - A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
J
=150°C
I
F
=15A,dI/dt=200A/µs,V
CE
=400V
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
Turn-On DelayTime
T
J
=150°C
V
GE
=15V, V
CE
=400V, I
C
=30A,
R
G
=10Ω,
Parasitic Inductance=150nH
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Diode Reverse Recovery Time
Turn-Off Energy
Total Switching Energy
Turn-Off Energy
Turn-On Rise Time
SWITCHING PARAMETERS, (Load Iductive, T
J
=150°C)
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
T
J
=25°C
I
F
=15A,dI/dt=200A/µs,V
CE
=400V
Turn-Off Delay Time
T
J
=25°C
V
GE
=15V, V
CE
=400V, I
C
=30A,
R
G
=10Ω,
Parasitic Ιnductance=150nH
Total Switching Energy
Turn-Off Fall Time
Turn-On Energy
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AOK30B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0
IF(A)
V
F
(V)
Fig
4
: Diode Characteristic
25°C
150°C
-40°C
0
40
80
120
160
01234567
IC(A)
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
9V
20V
17V
15V
11V
VGE= 7V
13V
0
20
40
60
80
100
4 7 10 13 16
IC (A)
VGE(V)
Fig
3
: Transfer Characteristic
150°C
25°C
-40°C
VCE=20V
0
20
40
60
80
100
120
01234567
IC(A)
VCE(V)
Fig 2: Output Characteristic
(Tj=150°C )
V
GE
=7V
9V
20V
17
V
15V
11V
13V
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0
IF(A)
VF(V)
Fig 4: Diode Characteristic
25°C
150°C
-40°C
0
40
80
120
160
01234567
IC(A)
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
9V
20V
17V
15V
11V
VGE= 7V
13V
0
20
40
60
80
100
4 7 10 13 16
IC (A)
VGE(V)
Fig 3: Transfer Characteristic
150°C
25°C
-40°C
0
1
2
3
4
5
6
0 25 50 75 100 125 150 175
VCE(sat)
(V)
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
IC=60A
IC=15A
IC=26A
VCE=20V
0
20
40
60
80
100
120
01234567
IC(A)
VCE(V)
Fig 2: Output Characteristic
(Tj=150°C )
V
GE
=7V
9V
20V
17
V
15V
11V
13V
2
3
4
5
6
7
8
0 30 60 90 120 150
VGE(TH)(V)
TJ(°C)
Figure 6: VGE(TH) vs. Tj
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AOK30B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 5 10 15 20 25 30 35
VGE (V)
Qg(nC)
Fig 7: Gate-Charge Characteristics
VCE=480V
IC=30A
0
50
100
150
200
250
25 50 75 100 125 150
Power Disspation
(W)
TCASE(°C)
Fig
10
: Power Disspation as a Function of Case
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
Capacitance (pF)
VCE(V)
Fig 8: Capacitance Characteristic
Cies
Cres
Coes
0
3
6
9
12
15
0 5 10 15 20 25 30 35
VGE (V)
Qg(nC)
Fig 7: Gate-Charge Characteristics
VCE=480V
IC=30A
0
50
100
150
200
250
25 50 75 100 125 150
Power Disspation
(W)
TCASE(°C)
Fig 10: Power Disspation as a Function of Case
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
Capacitance (pF)
VCE(V)
Fig 8: Capacitance Characteristic
Cies
Cres
Coes
0
10
20
30
40
50
60
25 50 75 100 125 150
Current rating IC
(A)
TCASE(°C)
Fig 11: Current De-rating
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AOK30B60D1
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
0 10 20 30 40 50 60 70
Switching Time (nS)
IC (A)
Figure 12: Switching Time vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=10Ω
ΩΩ
Ω)
Td(off)
Tf
Td(on)
Tr
1
10
100
1,000
10,000
0 30 60 90 120
Switching Time (nS)
Rg(Ω
ΩΩ
Ω)
Figure 13: Switching Time vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=30A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
Switching Time (nS)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
0 10 20 30 40 50 60 70
Switching Time (nS)
IC (A)
Figure 12: Switching Time vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=10Ω
ΩΩ
Ω)
Td(off)
Tf
Td(on)
Tr
1
10
100
1,000
10,000
0 30 60 90 120
Switching Time (nS)
Rg(Ω
ΩΩ
Ω)
Figure 13: Switching Time vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=30A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
0 50 100 150 200
Switching Time (nS)
TJ (°C)
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=400V,IC=30A,Rg=10Ω
ΩΩ
Ω)
Td(off)
Tf
Td(on)
Tr
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AOK30B60D1
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
0 10 20 30 40 50 60 70
SwitchIng Energy (mJ)
IC (A)
Figure 15: Switching Loss vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=10Ω
ΩΩ
Ω)
Eoff
Eon
Etotal
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 30 60 90 120
Switching Energy (mJ)
Rg(Ω
ΩΩ
Ω)
Figure 16: Switching Loss vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=30A)
Eoff
Eon
Etotal
0.5
1
1.5
2
2.5
Switching Energy (mJ)
Eoff
Eon
Etotal
0.5
1.0
1.5
2.0
2.5
Switching Energ y (mJ)
Eoff
Eon
Etotal
0
2
4
6
8
0 10 20 30 40 50 60 70
SwitchIng Energy (mJ)
IC (A)
Figure 15: Switching Loss vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=10Ω
ΩΩ
Ω)
Eoff
Eon
Etotal
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 30 60 90 120
Switching Energy (mJ)
Rg(Ω
ΩΩ
Ω)
Figure 16: Switching Loss vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=30A)
Eoff
Eon
Etotal
0
0.5
1
1.5
2
2.5
0 25 50 75 100 125 150 175
Switching Energy (mJ)
TJ (°C)
Figure 17: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=30A,Rg=10Ω
ΩΩ
Ω)
Eoff
Eon
Etotal
0.0
0.5
1.0
1.5
2.0
2.5
200 250 300 350 400 450 500
Switching Energ y (mJ)
VCE (V)
Figure 18: Switching Loss vs. VCE
(Tj=150°C,VGE=15V,IC=30A,Rg=10Ω
ΩΩ
Ω)
Eoff
Eon
Etotal
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AOK30B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
35
S
Trr (nS)
150°C
25°C
150°C
25°C
Trr
S
0
10
20
30
40
50
60
70
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
25
30
35
I
rm
(A)
Qrr (nC)
25°C
150°C
150°C
25°C
Qrr
Irm
13V
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 25 50 75 100 125 150 175 200
ICE(S) (A)
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=600V
VCE=400V
0.5
0.9
1.3
1.7
2.1
2.5
0 25 50 75 100 125 150 175
VSD (V)
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
30A
15
A
5A
IF=1A
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
350
0 5 10 15 20 25 30 35
S
Trr (nS)
IS(A)
Fig 22: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µµ
µs)
150°C
25°C
150°C
25°C
Trr
S
0
10
20
30
40
50
60
70
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25 30 35
I
rm
(A)
Qrr (nC)
IF(A)
Fig 21: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µµ
µs)
25°C
150°C
150°C
25°C
Qrr
Irm
13V
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 25 50 75 100 125 150 175 200
ICE(S) (A)
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=600V
VCE=400V
0.5
0.9
1.3
1.7
2.1
2.5
0 25 50 75 100 125 150 175
VSD (V)
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
30A
15
A
5A
IF=1A
0
4
8
12
16
20
0
50
100
150
200
250
150 200 250 300 350 400 450
S
Trr (nS)
di/dt (A/µ
µµ
µS)
Fig 24: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=15A)
25
°
C
150°C
25°C
150°C
Trr S
0
10
20
30
40
50
60
70
0
200
400
600
800
1000
1200
1400
150 200 250 300 350 400 450
I
rm
(A)
Qrr (nC)
di/dt (A/µ
µµ
µS)
Fig 23: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
(VGE=15V,VCE=400V,IF=15A)
150°C
25°C
150°C
25°C
Qrr
Irm
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AOK30B60D1
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
1
E
-
05
0
.
0001
0
.
001
0
.
01
0.1
1
10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
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AOK30B60D1
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