4N 3 . 3 8 A( Sh ort) GaAs IRED & PHOTO-TRANSISTOR (4N38{(Short)) AC LINE/ DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. 6 RELAY CONTACT MONITOR. OT Unit in mm The TOSHIBA 4N38 (Short) through 4N38 (Short) consists of a gallium , . arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. 7.624025 eS +01 025-005 | 7.85 ~ B90 __[2satazo a Switching Speeds : 3ys Typ. DC Current Transfer Ratio : 100% Typ. Isolation Resistance : 10'Q) Min. e Isolation Voltage : 2500Vrms Min. JEDEC _ UL Recognized : UL1577, File No. E67349 EIAd _ TOSHIBA 11-7A1 Weight : 0.4g PIN CONFIGURATIONS (TOP VIEW) 1f Ns MEN 5 30 ry 4 : ANODE : CATHODE : NC : EMITTER : COLLECTOR : BASE an FwWN4N38, 38A(Short) (4N38(Short)) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Continuous) Ip 80 mA Forward Current Derating Alp/c 1.07* mA/C a Peak Forward Current (Note) IpF 3 A | Power Dissipation Pp 150 mW Power Dissipation Derating APp/c 2.0* mW /C Reverse Voltage VR 3 Vv gz | Collector-Emitter Voltage BVCEO 80 Vv Collector-Base Voltage BVcBO 80 Vv |Emitter-Collector Voltage BVECO 7 Vv E Collector Current (Continuous) Ic 100 mA A Power Dissipation Pc 150 mW Power Dissipation Derating APC/C 2.0* mW /C |Storage Temperature Tstg ~55~150 C 4 Operating Temperature Topr 55~100 C is Lead Soldering Temperature (at 10 sec.) Tsold 260 C |Total Package Dissipation Pr 250 mW e Total Package Power Dissipation Derating APy/ C 3.3* mW /C Note : Pulse width 300s, 2% duty cycle. * Above 25C ambient.4N38, 38A(Short) (4N38(Short)) ELECTRICAL CHARACTERISTICS (Ta = 25C) 2500Vrms, 1 minute. CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX. | UNIT q|Forward Voltage VF Ip=10mA _ 1.15 | 1.5 Vv . Reverse Current IR VR=3V _ 100 | vA Capacitance Cp V=0, f=1MHz _ 30} pF DC Forward Current Gain hFE VcE=5V, Ip =500vA 200 | Collector-Emitter _ aw Breakdown Voltage V(BR)CEO| Ic=1mA 80) ~ v | Collector-Base Breakdown _ FB Voltage V(BR)CBO| Ic =100nA 80]; Vv fq | Emitter-Collector = ~}|lv 5 Breakdown Voltage V(BR)ECO | IE=100A 7 A |Collector Dark Current ICEO VCE =60V 1 50 | nA Collector Dark Current IcBo Vcp=60V _ 0.1 20 | nA Collector-Emitter nan fe Capacitance Ccr V=0, f=1MHz _ 10| | pF Current Transfer Ratio I/Ip Ip=10mA, VoER=10V 10 | 100 | % Collector-Emitter Saturation Voltage VCE(sat) | Ip=20mA, I=4mA ~ ~ 1.0 Capacitance Input to = =] _ _ F a Output Cs Vg=0, f=1MHz 0.8 Pp 2 Isolation Resistance Rg Vg=500V, R.H.= 60% 10! | _ a 5 BVs AC, 1 minute 2500 _ | Vrms o 4N38 1500 |} - |Isolation Voltage AC, P Vpk 8 [4N38A| BVg* C, Peak 2500 | | P 4N38A AC, 1 second 1775 | | Vrms Turn-on Time ton VcE=10V, Ic=2mA _ _ us Turn-off Time toff RL, =1000 _ - * JEDEC registered minimum BVg, however, TOSHIBA specifies a minimum BVg of4N38, 38A(Short) {4N3B(Short)) Po - Ta t e a fg = E gs 2 E Oo S7 9 & eo oO << Bo BE a ua 3S Ee Oz a ae Q 68 a) a =} 4 < < a -20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta 'C) AMBIENT TEMPERATURE Ta (C) Ipp DR Ir - VF ~ t z Ta=25C a e z 2 te 5 100 g 5 50 5 [oy 5 S90 9 2 % Co = #1 & < q z 6 a PULSE WIDTH $3008 3 z Ta =25C ' 10-3 10-2 10-3 10 0.6 0.8 1.0 1.2 14 1.6 18 DUTY CYCLE RATIO DR FORWARD VOLTAGE Vp {) AVE/ATa ~ IF Ipp - VFP -3.2 ro 8 Ep -28 = 3% 8 a -2.4 & z Zz wg 3 Ro 20 5 oe 2 gs e Be 5-16 3b 2 >a = avo m Ze -12 PULSE WIDTHS 10p8 be zai rms REPETITIVE FREQUENCY Oo -08 3 =100H2z Ta= 26C 0.4 1 0.1 0.3 1 3 10 30 0.6 10 14 18 2.2 2.6 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Vpp (V)4N38, 38A(Short) (AN38(Short)) Ic - Ip Ta=25C Vcor=10V seem Vop=04V < E o = 10 e Zz F 5] SAMPLE A 5 - a a a e g 3 SAMPLE B _ 3 5 05 02 1 3 10 30 100 FORWARD CURRENT Ip (mA) Ic - Ta _ Vop=10V Ip=50mA 1 < 2 a 1 5 5 5 $ e a oO a - 3 8 1 0.5 0.3 O12 -60 40 ~40 -20 Qo 20 60 80 100 AMBIENT TEMPERATURE Ta (C) (%) Icilp CURRENT TRANSFER RATIO (mA) COLLECTOR CURRENT Ic (vy) COLLECTOR-EMITTER SATURATION VOLTAGE VcK(sat) Ic/Ip - IF 400 | | Ta=25C Voe=10V cas NX] ---- Vop=0.4v SAMPLE A [A 200 va _ tk I= AHA 100 vA = > L_ sn SAMPLE BOT] T o_t 11 1 3 10 30 100 300 FORWARD CURRENT Ip (mA) Ic - VoE 20 Ta = 25C 0 2 4 6 8 10 12 14 COLLECTOR-EMITTER VOLTAGE Veg () VCE(sat) Ta 0.6 Ip=10mA [Ic =2mA 0.3 s 2 2 a Se oS 3 0.01 -60 ~40 -20 0 20 40 60 80 = 100 AMBIENT TEMPERATURE Ta (*C)4N38, 38A(Short) 4N38(Short)) Ip RBE Vop=24V . Ta= 100C <= < a < a = = & g & 2 & 5 5 dD % x : 5 5 A oO % x sg 2 100k 1M 10M e Qo BASE-EMITTER RESISTANCE Ryp (1) = 3 SWITCHING CHARACTERISTICS RBE Ta=25C Ir ot 0 20 40 60 80 100-120 AMBIENT TEMPERATURE Ta (C) SWITCHING CHARACTERISTICS Ryu ~ a 4 1000 Voc=5V Ip=5mA : Your m Q z z oO & = W qe 1 3 ty = & z = 5 & Z aM 1M 100 100 30 10k BASE-EMITTER RESISTANCE Rgg (0} td 0.5 1 a 10 30 LOAD RESISTANCE Ry, (kf)