© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 1
1Publication Order Number:
NB3N502/D
NB3N502
14 MHz to 190 MHz PLL
Clock Multiplier
Description
The NB3N502 is a clock multiplier device that generates a low jitter,
TTL/CMOS level output clock which is a precise multiple of the
external input reference clock signal source. The device is a cost
efficient replacement for the crystal oscillators commonly used in
electronic systems. It accepts a standard fundamental mode crystal or
an external reference clock signal. PhaseLockedLoop (PLL) design
techniques are used to produce an output clock up to 190 MHz with a
50% duty cycle. The NB3N502 can be programmed via two select
inputs (S0, S1) to provide an output clock (CLKOUT) at one of six
different multiples of the input frequency source, and at the same time
output the input aligned reference clock signal (REF).
Features
Clock Output Frequency up to 190 MHz
Operating Range: VDD = 3 V to 5.5 V
Low Jitter Output of 15 ps One Sigma (rms)
Zero ppm Clock Multiplication Error
45% 55% Duty Cycle
25 mA TTLlevel Drive Outputs
Crystal Reference Input Range of 5 27 MHz
Input Clock Frequency Range of 2 50 MHz
Available in 8pin SOIC Package or in Die Form
Full Industrial Temperature Range 40°C to 85°C
These are PbFree Devices
÷ MFeedback
VDD
Multiplier
Select
S1
Reference
Clock
REF
Phase
Detector
Charge
Pump
Crystal
Oscillator
X2
÷ P
X1/CLK
CLKOUT
Figure 1. NB3N502 Logic Diagram
GND
S0
TTL/
CMOS
Output
VCO
TTL/
CMOS
Output
Device Package Shipping
ORDERING INFORMATION
NB3N502DG SOIC8
(PbFree)
98 Units / Rail
SOIC8
D SUFFIX
CASE 751
MARKING DIAGRAM
http://onsemi.com
3N502 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G= PbFree Package
3N502
ALYW
G
1
8
NB3N502DR2G SOIC8
(PbFree)
2500 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
8
NB3N502
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2
Figure 2. Pin Configuration (Top View)
CLKOUT
S0
S1
X2
X1/CLK
VDD
GND
REF
1
2
3
45
6
7
8
Table 1. CLOCK MULTIPLIER SELECT TABLE
S1* S0** Multiplier
L L 2X
L H 5X
M L 3X
M H 3.33X
H L 4X
H H 2.5X
L = GND
H = VDD
M = OPEN (unconnected)
* Pin S1 defaults to M when left open
** Pin S0 defaults to H when left open
Table 2. OUTPUT FREQUENCY EXAMPLES
Output Frequency (MHz) 20 25 33.3 48 50 54 64 66.66 75 100 108 120 135
Input Frequency (MHz) 10 10 10 16 20 13.5 16 20 15 20 27 24 27
S1, S0 0 ,0 1, 1 M, 1 M, 0 1, 1 1, 0 1, 0 M, 1 0, 1 0, 1 1, 0 0, 1 0, 1
Table 3. PIN DESCRIPTION
Pin # Name I/O Description
1 X1/CLK Input Crystal or External Reference Clock Input
2 VDD Power Supply Positive Supply Voltage (3 V to 5.5 V)
3 GND Power Supply 0 V Ground.
4 REF CMOS/TTL Output Buffered Crystal Oscillator Clock Output
5 CLKOUT CMOS/TTL Output Clock Output
6 S0 CMOS/TTL Input Multiplier Select Pin Connect to VDD or GND. Internal Pullup Resistor.
7 S1 Threelevel Input Multiplier Select Pin Connect to VDD, GND or Float to M.
8 X2 Crystal Input Crystal Input Do Not Connect when Providing an External Clock Reference
Table 4. ATTRIBUTES
Characteristic Value
ESD Protection Human Body Model
Machine Model
> 8 kV
> 600 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in
Transistor Count 6700 Devices
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
NB3N502
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Table 5. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Units
VDD Positive Power Supply GND = 0 V 7 V
VIInput Voltage GND – 0.5 = VI =
VDD + 0.5
V
TAOperating Temperature Range 40 to +85 °C
Tstg Storage Temperature Range 65 to +150 °C
qJA Thermal Resistance (JunctiontoAmbient) 0 LFPM
500 LFPM
SOIC8
SOIC8
190
130
°C/W
°C/W
qJC Thermal Resistance (JunctiontoCase) (Note 1) SOIC841 to 44 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. JEDEC standard multilayer board 2S2P (2 signal, 2 power).
Table 6. DC CHARACTERISTICS (VDD = 3 V to 5.5 V unless otherwise noted, GND = 0 V, TA = 40°C to +85°C) (Note 2)
Symbol Characteristic Min Typ Max Unit
IDD Power Supply Current
(unloaded CLKOUT operating at 100 MHz with 20 MHz crystal)
20 mA
VOH Output HIGH Voltage IOH = 25 mA TTL High 2.4 V
VOL Output LOW Voltage IOL = 25 mA 0.4 V
VIH Input HIGH Voltage, CLK only (pin 1) (VDD / 2) + 1 VDD / 2 V
VIL Input LOW Voltage, CLK only (pin 1) VDD / 2 (VDD / 2) 1 V
VIH Input HIGH Voltage, S0, S1 VDD – 0.5 V
VIL Input LOW Voltage, S0, S1 0.5 V
VIM Input level of S1 when open (Input Mid Point) VDD ÷ 2 V
Cin Input Capacitance, S0, S1 4 pF
ISC Output Short Circuit Current ± 70 mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Parameters are guaranteed by characterization and design, not tested in production.
Table 7. AC CHARACTERISTICS (VDD = 3 V to 5.5 V unless otherwise noted, GND = 0 V, TA = 40°C to +85°C) (Note 3)
Symbol Characteristic Min Typ Max Unit
fXtal Crystal Input Frequency 5 27 MHz
fCLK Clock Input Frequency 2 50 MHz
fOUT Output Frequency Range
VDD = 4.5 to 5.5 V (5.0 V ± 10%)
VDD = 3.0 to 3.6 V (3.3 V ± 10%)
14
14
190
120
MHz
MHz
DC Clock Output Duty Cycle at 1.5 V up to 190 MHz 45 50 55 %
tjitter (rms) Period Jitter (RMS, 1 σ) 15 ps
tjitter (pktopk) Total Period Jitter, (peaktopeak) ±40 ps
tr/tfOutput rise/fall time (0.8 V to 2.0 V / 2.0 V to 0.8 V) 1 2 ns
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Parameters are guaranteed by characterization and design, not tested in production.
NB3N502
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4
APPLICATIONS INFORMATION
High Frequency CMOS/TTL Oscillators
The NB3N502, along with a low frequency fundamental
mode crystal, can build a high frequency CMOS/TTL output
oscillator. For example, a 20 MHz crystal connected to the
NB3N502 with the 5X output selected (S1 = L, S0 = H)
produces a 100 MHz CMOS/TTL output clock.
External Components
Decoupling Instructions
In order to isolate the NB3N502 from system power
supply, noise decoupling is required. The 0.01 mF
decoupling capacitor has to be connected between VDD and
GND on pins 2 and 3. It is recommended to place
decoupling capacitors as close as possible to the NB3N502
device to minimize lead inductance. Control input pins can
be connected to device pins VDD or GND, or to the VDD and
GND planes on the board.
Series Termination Resistor Recommendation
A 33 W series terminating resistor can be used on the
CLKOUT pin.
Crystal Load Capacitors Selection Guide
The total onchip capacitance is approximately 12 pF per
pin (CIN1 and CIN2). A parallel resonant, fundamental mode
crystal should be used.
The device crystal connections should include pads for
small capacitors from X1/CLK to ground and from X2 to
ground. These capacitors, CL1 and CL2, are used to adjust the
stray capacitance of the board to match the nominally
required crystal load capacitance (CLOAD (crystal)).
Because load capacitance can only be increased in this
trimming process, it is important to keep stray capacitance
to a minimum by using very short PCB traces (and no vias)
between the crystal and device. Crystal load capacitors, if
needed, must be connected from each of the pins X1 and X2
to ground. The load capacitance of the crystal (CLOAD
(crystal)) must be matched by total load capacitance of the
oscillator circuitry network, CINX, CSX and CLX, as seen by
the crystal (see Figure 3 and equations below).
R
CIN1
12 pF
CIN2
12 pF
G
Internal
to Device
X2
X1/CLK
CS1 CS2
CL1 CL2
Crystal
CLOAD1 = CIN1 + CS1 + CL1 [Total capacitance on X1/CLK]
CLOAD2 = CIN2 + CS2 + CL2 [Total capacitance on X2]
CIN1 [ CIN2 [ 12 pF (Typ) [Internal capacitance]
CS1 [ CS2 [ 5 pF (Typ) [External PCB stray capacitance]
CLOAD1,2 = 2 S CLOAD (Crystal)
CL2 = CLOAD2 CIN2 CS2 [External load capacitance on X2]
CL1 = CLOAD1 CIN1 CS1 [External load capacitance on X1/CLK]
Example 1: Equal stray capacitance on PCB
CLOAD (Crystal) = 18 pF (Specified by the crystal manufacturer)
CLOAD1 = CLOAD2 = 36 pF
CIN1 = CIN2 = 12 pF
CS1 = CS2 = 6 pF
CL1 = 36 12 6 = 18 pF
CL2 = 36 12 6 = 18 pF
Example 2: Different stray capacitance on PCB trace X1/CLK vs. X2
CLOAD (Crystal) = 18 pF
CLOAD1 = CLOAD2 = 36 pF
CIN1 = CIN2 = 12 pF
CS1 = 4 pF & CS2 = 8 pF
CL1 = 36 12 4 = 20 pF
CL2 = 36 12 8 = 16 pF
Figure 3. Using a Crystal as Reference Clock
NB3N502
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5
PACKAGE DIMENSIONS
SOIC8 NB
CASE 75107
ISSUE AK
SEATING
PLANE
1
4
58
N
J
X 45 _
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 75101 THRU 75106 ARE OBSOLETE. NEW
STANDARD IS 75107.
A
BS
D
H
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B3.80 4.00 0.150 0.157
C1.35 1.75 0.053 0.069
D0.33 0.51 0.013 0.020
G1.27 BSC 0.050 BSC
H0.10 0.25 0.004 0.010
J0.19 0.25 0.007 0.010
K0.40 1.27 0.016 0.050
M0 8 0 8
N0.25 0.50 0.010 0.020
S5.80 6.20 0.228 0.244
X
Y
G
M
Y
M
0.25 (0.010)
Z
Y
M
0.25 (0.010) ZSXS
M
____
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
ǒmm
inchesǓ
SCALE 6:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone: 81358171050
NB3N502/D
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