SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)LINE TYPE No. No. 2 |scc421 5 |$CD421 8 |SCE421 89 RATE| FREE JtoC |AIR @ 25C 511m |100 714m = |125 @ m 857m |150f D.A.T.A. ceo |Icbo @ MAX @25C 1.0m 0D |3.0 OD |4.0 0g 14.0 SYMBOLS AND CODES EXPLAINED IN INTERPRETER fae MAX. SAT. RES. 333m 250m 250m IN ORDER OF (1) MIN. DERATING FACTOR tr STRUC/Y200 jE O -TURE ; s/a |AD T0200/D E a DME |TO3 |cd DME |[TO3 |C@ DME |TO3 |Ccd 89b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)IN ORDER OF (1) fab, (2) MAX RISE TIME & TYPE RISE DELAY} STORE| FALL |IN FREE . | Cob rbb /STRUCTURE/M|MAX.|Y200 {EO No. fab TIME | TIME | TIME | TIME | AIR @ | Vcb . X |P-PNP A}TEMP| s/a AD tr td ts tf 25C Cob |N-NPN T TOQ200 [DE : n u 2# |2SA458 6.0M 1000n 700n 700n 150m : P-A Ge RO107b -4u m . 2N1174 7.00M 1.5ud 250m . . TO29 JAN2N496 7.20M8A | 175n$ 150m ( . : i TO1 u F 280223 8.0M 300n : : 10 Z : i MD25 jA@ 2N826 8.00M 400nt 75m : D u9 2NB16 8.00M 600nt 75m P u 2SC36 9.00MSA | 1000n . ; , RO 26603 9.40M 400n 2SA326 10.0M 85n 2N1607 10.0M$8A | 265ng 2SC85 10.0M 500n 2SA371 10.0M 900n NKT108 10.0M |1000n CK27 11.0M 2N1103 12M 50nd | - . 30 ASZ30 12.0MA | 300n : : 20 v CK4A 12.0M |1400n 400uA| 60 2SA50 14.0M 100nt 100 SFT298 15.0M 100nd . 35 CK28A 17.0M 400nZt 80 . m NKT107 18.0M 500n : : 80 NS9001 20.0MSA | 100nd ! 30 RT731M 20.0M 110nt 80 2$C5110 20M&A| 130nd : 150 25C513R 20MSA| 130nd : : 90 285230 20M54| 130nd 2SC524R 20MSA; 13008 TN304 20.0M | 150n 1776-0440 20MSA] S00ne 2SC 167 20.0M 580n 30 1776-0460 20MSA 60 15 2N3602 20.0M8A |1000n = }300n : 1.0 % {180 330m USAF501ES001M |20.0M ( 20 150 BUY55-4 20M | 2.0ud . 7.0 |8.0 214m u . . m BUY56-4 20M8 | 2.0ud 7.0 Z \8.0 214m 5 5 m BUY72-4 20M8 2. : 7.0% '8.0 214m = . : . m SYMBOLS AND CODES 115 D.A.T.A. EXPLAINED IN INTERPRETER 115