DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAT74S Schottky barrier double diode Product specification Supersedes data of 1998 Jul 10 2003 Apr 11 Philips Semiconductors Product specification Schottky barrier double diode BAT74S FEATURES PINNING * Low forward voltage PIN * Guard ring protected 1 anode 1 * Small SMD package. 2 not connected DESCRIPTION 3 cathode 2 APPLICATIONS 4 anode 2 * Ultra high-speed switching 5 not connected * Voltage clamping 6 cathode 1 * Protection circuits * Blocking diodes. 6 5 4 handbook, halfpage 6 5 1 2 4 DESCRIPTION Planar Schottky barrier double diode with an integrated guard ring for stress protection. 1 Two separate dies are encapsulated in a SOT363 (SC-88) small SMD plastic package. 2 Top view 3 MDB277 3 MSA370 Marking code: 74. Fig.1 Simplified outline (SOT363; SC-88) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage - 30 V IF continuous forward current - 200 mA IFRM repetitive peak forward current - 300 mA IFSM non-repetitive peak forward current tp < 10 ms 600 mA Ptot total power dissipation Tamb 25 C; see Fig.2 - 240 mW Tstg storage temperature -65 +150 C Tj junction temperature - 125 C Tamb operating ambient temperature -65 +125 C - 30 V - 60 V - 110(1) mA - 200 mA tp 1 s; 0.5 Double diode operation VR continuous reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current series connection tp 1 s; 0.5 Note 1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in reverse and the other in forward operation at the same moment, total device current is max. 200 mA. 2003 Apr 11 2 Philips Semiconductors Product specification Schottky barrier double diode BAT74S ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.4 2 A trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA 5 ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.5 10 pF Note 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOT363 standard mounting conditions. 2003 Apr 11 3 VALUE UNIT 416 K/W Philips Semiconductors Product specification Schottky barrier double diode BAT74S GRAPHICAL DATA MSA892 MBL889 300 3 10halfpage handbook, IF (mA) Ptot (mW) (1) (2) (3) 10 2 200 10 100 1 0 0 75 10 1 150 Tamb (C) (1) (2) (3) 0 0.4 0.8 VF (V) 1.2 (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.3 Forward current as a function of forward voltage; typical values. Fig.2 Power derating curve. MSA893 10 3 MSA891 15 handbook, halfpage IR (A) (1) Cd (pF) 10 2 (2) 10 10 5 1 (3) 10 1 0 10 20 VR (V) 0 30 0 10 (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. f = 1 MHz; Tamb = 25 C. Fig.4 Fig.5 Reverse current as a function of reverse voltage; typical values. 2003 Apr 11 4 20 VR (V) 30 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier double diode BAT74S handbook, halfpage I F dI F dt 10% t Qr 90% IR t rr MBL888 Fig.6 Reverse recovery definitions. 2003 Apr 11 5 Philips Semiconductors Product specification Schottky barrier double diode BAT74S PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2003 Apr 11 REFERENCES IEC JEDEC EIAJ SC-88 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Schottky barrier double diode BAT74S DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL W://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Apr 11 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp8 Date of release: 2003 Apr 11 Document order number: 9397 750 11161 Philips Semiconductors - PIP - BAT74S; Schottky barrier double diode Submit Que Philips Semiconductors Home ProductBuy MySemiconductors ContactProduct Information catalogonline BAT74S; Schottky barrier double diode Information as of 2003-04-23 My.Semiconductors.COM. Your personal service from Use right mouse button to Philips Semiconductors. download datasheet Please register now ! 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Datasheet top Type number Title BAT74S Publication release date Schottky 4/3/2011 barrier double diode Datasheet status Page count File size (kB) Datasheet Product specification 8 55 Download Download PDF File file:///G|/imaging/BITTING/CPL/20030424/04232003_9/PHGL/_HTML04232003/BAT74S.html (1 of 2) [May-05-2003 10:24:59 AM] Philips Semiconductors - PIP - BAT74S; Schottky barrier double diode Products, packages, availability and ordering top Type number BAT74S North Ordering code American (12NC) type number Marking/Packing Package Device status Discretes packing Download info PDF File BAT74S T/R 9340 458 30115 Standard Marking SOT363 * Reel Pack, SMD (UMT6) BAT74S /T3 Standard Marking SOT363 9340 458 30135 * Reel Pack, SMD, (UMT6) Large Similar products Buy online Full production order this product Full production online order this product online - top BAT74S links to the similar products page containing an overview of products that are similar in Products function similar or related to the type number(s) as listed on this page. 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