MIL SPECS 1 fj oooo1es 0003504 4 yy MILL~S-19500/415( USAF) | NOTICE | NOTICE 1 |OF VALIDATION | 9 September 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812, AND 2N2814 JAN, AND JANTX MIL-S-19500/415( USAF) Amendment 2, dated 18 April 1973, has been reviewed and determined to be valid for use in acquisition. Custodians: Preparing activity: Air Force ~ 17 Air Force - 17 Agent: DLA - ES AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. letMIL SPECS TCH ooo00125 o003507 o & MIL~S~19500/415(USAF) AMENDMENT 2 18 April 1973 SUPERSEDING AMENDMENT 1 16 December 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES JAN2N2812, JANTX2N2812, JAN2N2814 AND JANTX2N2814 This amendment forms a part of Military Specification MIL-S-19500/7415(USAF), dated 10 July 1969. Page 1 *TITLE: Delete and substitute the following: "SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812 AND 2N2814 NON-TX, TX, AND TXV" at *1.1: Delete and substitute: "1.1 Scope. This specification covers the detail requirements for NPN, silicon, high-power transistors. The prefix 'TX' is used on devices submitted to and passing the special process- conditioning, testing, and screening as specified in 4.5. The prefix 'TXV' is used on devices submitted to and passing the internal visual inspection specified in 4.6." 1.4, Switching time max limit for ton: Delete "350" and substitute '400"; switching time max limit for tg: Delete "200" and substitute "400", Page 2 *Add the following new paragraphs: "3.4.2 Internal visual (PRECAP) inspection and process-conditioning, testing, and screening of 'TXV' types. The 'TXV' device type shall, in addition to all performance require- ments, be internally visually inspected and process~-conditioned, tested, and screened in accor- dance with 4.6." "3.5.2 'TXV' marking. Devices in accordance with the "TXV' requirements shall be marked with 'TXV' immediately following the JAN prefix." *4,2.1: Delete and substitute: "4.2.1 Qualification testing. The non-TX types shall be used for qualification testing. Upon request fo the qualifying activity, qualification will be extended to include the 'TX' and 'TXV' types of the device." Page 6 Table 1, Group A inspection, Subgroup 4, Turn-on time max limits column: Delete ''350' and substitute "400"; Fall time max limit column: Delete 200" and substitute 400". FSC 5961MIL SPECS | TC ogono125 OOoaso8 2 & MIL-S-19500/415 (USAF) AMENDMENT 2 Page 9 Table II, Group B inspection (Continued), Subgroup 5: Under Details column, delete and substitute the following: Load Cond. C: Tc = 25C (see Figure 3b, herein), Duty Cycle < 2% Test 1: tp = 7.82 us (vary to obtain IC) tp = te < 500 ns RBB1 = 52 VBB1 = 18 Vde RBB2 = @ VBB2 = 0 Vcc = 22.5 Vde Ic = 8 Ade L= 15 uwH, < 12 Test 2: tp = 25 ps (vary to obtain IC) tr = tf < 500 ns RBBI = 5 2 VBBI1 = 13 Vde - RBB2 = @ VBB2 = 9 Vcc = 22.5 Vde Ic = 2.54 Adc L= 150 pH, < 102 Page 13 Figure 8b. Switching: Unclamped inductive load. Delete and substitute the attached Figure 3b. Page 16 *Add the following new paragraph: 4,6 Internal visual (PRECAP) inspection and process-conditioning, testing, and screening of 'TXV' types. The internal visual inspection Shall be performed in accordance with test method 2072 of MIL-STD-750 prior to encapsulation on a 100 percent basis and process-~ conditioning, testing, and screening shall be as specified in 4.5. The manufacturer shall per- mit the authorized Government representative to witness concurrent with time of manufacturer's performance of these tests, the process-conditioning, testing, and screening of the devices. Those conditioning and screening tests normally performed by a manufacturer as standard pro- duction tests, need not be repeated when these are predesignated and acceptable to the Govern- ment as being equal to or more severe than the test specified herein." 1/ The margins of this amendment are marked with an asterisk to indicate where changes from the previous amendment were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contrac- tors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous amendment. Page 2 of 4% COLLECTOR CURRENT- IC- AMPERES MIL SPECS cf O0001i2e5 00035049 4 i MIL-S-19500/415(USAF) AMENDMENT 2 1 2 2 a s @7ee81!1 2 > 4 ss @gv7veer 2 3a 1.0 10 100 1000 L- INDUCTANCE - MICROHENRIES FIGURE 3b. Switching: Unclamped inductive load. Page 3 of 4MIL SPECS 1c go001n25 0003510 oO | MIL-S-19500/415 (USA F) AMENDMENT 2 Custodian: Preparing activity: Air Force - 17 Air Force - 17 * Review activities: Agent: Air Force - 11, 19, 80 DSA - ES/ajf DSA - ES (Project 5961- F525) User activities: Air Force - 13, 15 Wy U.S. GOVERNMENT PRINTING OFFICE: 1973 -714-545/5205 Page 4of 4MIL SPECS cf gooo1es oo03511 2 i MIL-S- 19500/415(USAF) 10 July 1969 MILITARY SPECIFICATION SEMICONDUCTOR DEVdCE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES JAN2N2812, JANTX2N2812, JAN2N2814 AND JANTX2N2814 1. SCOPE 1.1 Scope. This specification covers the detail requirements for NPN, silicon, high-power transistors. The prefix "TX" is used on devices submitted to and passing the special proc ess- conditioning, testing, and screening as specified in 4.5 through 4.5.9.1. 1.2 Physical dimensions. See figure 1 (TO-61). 1.3 Maximum ratings. | Pr 1/ Py 2/ Type | os . : Ta = 25C | Tc = 100C | VoBo | VEBO | VCEO | Ic | IB Tc ; Ww Ww Vde Vde Vde | Ade | C c 2N2812 4.0 50 "80 8.0 60 10 | 2.0 | -65 to +200 2N2814 . 4.0 50 120 8.0 80 10 | 2.0 | -65 to +200 1 i : t 1/ Derate linearly at 22.8 mW/C for Ta > 25C. 2/ Derate linearly at 0.5 W/C for Tc > 100C. 1.4 Primary electrical characteristics. i | , Limit | 65-C Ic = 5.0 Adc ! Ic = 5.0 Adc | VcB = 10 Vde VCE = 5.0 Vde | Vcyg = 10 Vdc : : | Ip=0.5 Adc: Ip=0.5Adc: Ip=0 Ic = 5.0 Ade |Ic = 1.0 Adc i 100 kHz <f< 1 MHz f = 10 MHz t . C/W Vde Vde pf > Min --- --- --- --- 40 1.5 _ Max 2.0 1.2 0.5 350 120 | 7.0 I hFE hFE hFE Switching time 7 | ; Limit | Vcg =5.0Vde. | VcE =5.0 Vdc VCE = 5.0 Vde Ic = 1.0 Adc Ic = 10 Adc Ic = 10 mAdc ton ts tf nsec | nsec | nsec Min 50 15 10 --- --- ce: . Max 150 | --- --- 350 1000 200 FSC 5961 -- MIL-S8-19500/415(USAF) ~ wa, specs Ic cooo1es Oooasze 4 2. APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of the specification to the extent specified herein. SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS MILITARY MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts. MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of specificztions, standards, drawings, and publications required by suppliers in connection with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer. ) 3. REQUIREMENTS 3.1 General. Requirements shall be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500. ; 3.3 Design, construction, and physical dimensions. Transistors shall be of the design, con- struction, and physical dimensions shown on figure 1. 3.4 Performance characteristics. Performance characteristics shall be as specified intables I, OH, and I, and as follows: 3.4.1 Process-conditioning, testing, and screening for '"'TX"' types. Process -conditioning, testing. and screening for the "TX" types shall be as specified in 4.5. 3.5 Marking. The following marking specified in MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of origin. (b) Manufacturer's identification. 3.5.1 "TX" marking. Devices in accordance with the "TX" requirements shall include the marking "JANTX" preceding the type designation. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-5-19500, and as specified herein. 4.2 Qualification inspection. Qualification inspection shall consist of the examinations and tests specified in tables I, Oi, and M1. 4.21 Qualification testing. The non-TX types shall be used for qualification testing. (Upon request to the qualifying activity, qualification will be extended to include the "TX" type of the device. ) ye my_.e< NESE TEV / ZLIVUOAL | MIL SPECS IC 0000125 0003513 bg 4 -28-UNF-2A (MODIFIED) \ * .2268 2205 PITCH DIA | i | (SEE NOTE 9) iy! A DIMENSIONS N fe i ff 0 LTa|__INCHES [miuimeters | 7 jd, MIN MAX MIN MAX S$ oJ A | 422 | .455 | 10.72 | 11.56 B | 325 | 460 | 8.26 |11.68 , C | .640 | .875 | 16.26 | 22.23 | 6 D | .047 | .072 | 1.19 | 1.83 | 7 E | .095 | 415 | 241 | 2.92 | 7 F 150 3,81 G [| .090 | .150 | 2.29 | 3.81 H | 570 | 610 | 14.48 | 15.49 J] 340 | 415 | 8.64 | 10.54 K | .667 | .687 | 16.94 117.45 | 8 L {170 | .213 | 4.32 | 5.41 | 3 M | .610 | .667 | 15.49 117.45 N 210 6.86 Of} .220 | .249 [ 5.59 | 6.32 P 090 2.29 * INCHES MN; 2225 | 5.65 2268 || 5.76 COLLECTOR (SEE NOTE 2) EMITTER BASE NOTES: 1. Metric equivalents (to the nearest .01 mm) are given for general information only and are based upon 1 inch = 25.4 mm. The collector shall be electrically connected to the case. Lead spacing measured at seat only. Position of leads in relation to hex is not controlled. Maximum recommended mounting torque: 20 in-Ib. All three leads. Two leads. (Base and emitter). All three locations, Threads in accordance with Handbook H28, WO~1M ONS ww AD of 8 a FIGURE 1. Physical dimensions of transistor types JAN2N2812, JANTX2N2812, JAN2N2814 and JANTX2N2814 TO-61).MIL-S-19500/415(USAF) MIL SPECS rch Dogo1es 0003514 & 4.3 Quality conformance inspection. Quality conformance inspection shall consist of groups A, B, and C inspection. When specified in the contract or order, one copy of the quality conformance inspection data, pertinent to the device inspection lot, shall be supplied with each shipment by the device manufacturer (see 6. 2). 4.3.1 Group A inspection. Group A inspection shall consist of the examinations and tests specified in table I. 4.3.2 Group B inspection. Group B inspection shall consist of the examinations and tests specified in table II. 4.3.3 Group C inspection. Group C inspection shall consist of the examinations and tests specified in table HI. This inspection shall be conducted on the initial lot and thereafter every 6 months during production. 4.3.4 Group B and group C life-test samples. Samples that have been subjected to group B, 340-hours life-test. may be continued on test to 1, 000 hours in order to satisfy group C life-test requirements. These samples shall be predesignated, and shall remain subjected to the group C 1, 000-hour acceptance evaluation after they have passed the group B, 340-hour acceptance criteria. The cumulative total of failures found during 340-hour test and during the subsequent interval up to 1,000 hours shall be computed for 1, 000-hour acceptance criteria (see 4.3.3). 4.4 Methods of examination and test. Methods of examination and test shall be as specified in tables I, I, and I, and as follows: 4.4.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.4.2 Case-temperature control for | hge | test. To maintain the case temperature at less than +40C for this test, the specified DC collector current should be applied for not longer than 10 seconds without employing a heat sink. 4.4.3 Solderability test. The following particular procedural requirements shall apply for this test: . (a) Immersion depth for both transistor types shall be 0.200 10.025 inches. (b) Dwell time (immersion in the solder bath) shall be 7 +0.5 seconds. 4.4.4 Resistance to solvents. Transistors shall be subjected to tests in accordance with method 215 of MIL-STD-202. The following details shall apply: (a) All areas of the transistor body where marking has been applied shall be brushed. (bo) After subjection to the tests, there shall be no evidence of mechanical damage to the device and markings shall have remained legible.MIL SPECS IC. TABLE L Group Ai ti ___MIL-S-19500/415(USAF) _ ee Boooo1es ono3sis 1 MIL-STD~75) LTPD Limits Exomination or test y 7 ee TN 7 ees eee Method Details TX! Symbol Min Mox Unit Subgroup 1 10 | 5 Visual and mechanical 2071 --- -- coe poor examination Subgroup 2 5 | 3 Breakdown voltage, 3011 | Bias cond. D; Ic = 10 mAdc; BVcEO collector to emitter pulsed (see 4.4.1) 2N2812 60 --- | Vde 2N2814 80 --- | Vde Breakdown voltage. 3011 | Bias cond. D; Ic = 100 mAdc; BVCEO collector to emitter pulsed (see 4.4.1) 2N2812 60 --- | Vde 2N2814 80 --- | Vdc Breakdown voltage, 3001 | Bias cond. D; Ic = 10 pAdc BVCBO collector to base 2N2812 80 --- | Vde 2N2814 120 --- | Vde Breakdown voltage, 3026 | Bias cond. D; Ip = 10 wAdc BVEBO | 8.0 --- | Vde emitter to base Collector to emitter 3041 | Bias cond. D; IcCEO --- 10 | uAdc cutoff current VCE = 50 Vdc Collector to emitter 3041 | Bias cond. A; ICEX cutoff current Vep = 0.5 Vdc 2N2812 VCE = 80 Vdc ene 1.0 | pAde 2N2814 VcE = 120 Vde --- 1.0 | pAdc Collector to base 3036 1 Bias cond. D IcBO cutoff current i 2N2812 Vcp = 60 Vdc --- 0.1 | pAdc 2N2814 Vcp = 80 Vdc --- 0.1 | wAdc Emitter to base cutoff 3061 | Bias cond. D; IgBO --- 0.1 | pAde current VEB = 6.0 Vde \ Subgroup 3 5 | 3 Forward-current 3076 | VCE = 5.0 Vde; here 50 150 j --- transfer ratio Ic = 1.0 Adc; pulsed (see 4.4.1) Forward-current 3076 | Vck = 5.0 Vdc; hFE 40 120 | --- transfer ratio Ic = 5.0 Adc; pulsed (see 4.4.1) Forward-current 3076 | Voz = 5.0 Vde; hpe 15 w--- | soe transfer ratio Ic = 10 Adc; pulsed (see 4.4.1) iIT -S-19500/415(USAF MIL-S -19500/4 15(USAF) TABLE I. Group A inspection - Concinued Dooo1es ooossib 1 ' - MIL SPECS Ic MIL-STD-750 LTPD eimits Exomination or test - cop re aoe en een Method Details : a Symbol Min Mox Unit Subgroup 3 - Continued Forward-current 3076 | Vcr = 5.0 Vde; hpr 10 --- |--- transfer ratio Ic = 10 mAdc; pulsed (see 4.4.1) Base emitter voltage 3066 | Test cond. B; VBE --- 1.2 | Vdc (nonsaturated) VCE = 5.0 Vdc; Ic = 5.0 Adc; pulsed (see 4.4.1) Base emitter voltage 3066 | Test cond. A; VBE(sat)} --- 1.2 | Vdc (saturated) Ic = 5.0 Ade; Ip = 0.5 Adc; pulsed (see 4.4. 1) Base emitter voltage 3066 | Test cond. A; VpE(sat)} --- 2.0 |Vdc (saturated) Ic = 10 Adc; Ip = 1.0 Adc; pulsed (see 4.4.1) Collector to emitter 3071 |Ic = 5.0 Ade; Vor(sat)| --- 0.5 {Vdc voltage (saturated) Ip = 0.5 Adc; pulsed (see 4.4.1) Collector to emitter 3071 |Ic = 10 Adc; VcR(sat)| --- 1.5 |Vde voltage (saturated) - |Ip = 1.0 Ade; pulsed (see 4.4.1) Subgroup 4 715 Magnitude of common- 3306 |VcRE = 10 Vdc; | hfe | 1.5 | 7.0 |--- emitter small-signal Ic = 1.0 Ade; f = 10 MHz short-circuit forward- (see 4.4.2) current transfer ratio Smali-signal short-circuit 3206 |VcE = 5.0 Vdc; hfe 40 150 {--- forward-current transfer Ic = 50 mAdc ratio Open-circuit output 3236 |VcBp= 10 Vdc; In = 0; Cobo o-- 350 |pf capacitance 100 kHz <f < 1 MHz Pulse response 3251 |Test cond. A except test circuit and pulse require- ments per figure 2 Turn-on time Vcc = 25.5 Vde; ton --- 350 | nsec VBB = 5.0 Vdc; Ic = 5.0 Adc; Ipi = 0.5 Ade Storage time Vcc = 25.5 Vde; ts --- | 1000 | nsec VpBB = 5.0 Vdc; Ic = 5.0 Ade; Ip1 = -Ipg = 0.5 Ade Fall time Vcc = 25.5 Vdc; ts --- 200 | nsec VBB = 5.0 Vde; Ic = 5. 0Ade; Ipi = -Ip2 = 0.5 Adc 6MIL SPECS TABLE I. Group A inspection - Continued rc fj oooo1es ooo3asi? 3 ff MIL-S-19300/4 15(USAF) MIL-STD-750 LTPN Limits Exsuminotian or test : Non Method | Details Tx |TX Symbol Min Mox Unit Subgroup 5 10 | 10 High-temperature operation: TA=+ 150C Collector to emitter 3041 | Bias cond. A; ICEX cutoff current VERB = 0.5 Vde 2N2812 VCE = 60 Vdc --- | 50 | pAdc 2N2814 VcE = 80 Vde co 50 pAdc Low-temperature operation: Ta = -65C Forward-current 3076 | Vok = 5.0 Vdc; hFrE 20 woo fooce transfer ratio Ic = 5.0 Adc; pulsed (see 4.4.1) TABLE Il. Group B inspection MIL-STD-750 LTPD Limits Examination or test 1 Non! Method | Details TX Symbol Min Max Unit Subgroup 1 20 120 Physical dimensions 2066 | (See figure 1) --- --- --- |[--- Subgroup 2 10 110 Solderability 2026 | (see 4.4.3) --- on rs Thermal shock 1051 | Test cond. C; 10 cycles; eo --- w-- joe (temperature cycling) time at temperature ex- tremes = 15 minutes minimum Thermal shock (glass strain) 1056 | Test cond. B --+ --- e-- | --- Terminal strength (tension) 2036 | Test cond. A; o-- --- --- |--- weight = 10 lbs +10 oz; application time = 15 sec Terminal strength (stud 2036 | Test cond. Dg; --- --- --- |--- torque) torque = 20 in-lb; application time = 15 sec Terminal strength (lead 2036 | Test cond. Dj; mee --- --- |--- torque) torque = 6 in-oz; application time = 15 sec Seal (leak-rate) 1071 | Test cond. Gor H for fine oe --- |5x1077| atm leaks; test cond. A, C, D, cc/sec or F for gross leaks Moisture resistance 1021 | Omit initial conditioning --- --- --- | ---MIL-5-19000/4 Llo{UsAr) TABLE II. Group B inspection - Continued | Oooo12@s 0003518 & MIL SPECS Tc: MIL-STD-750 LTPD Limits Examinotion or test N Method Details TX Symbol Min Mox Unit Subgroup 2 - Continued End points: Breakdown voltage, 3011 | Bias cond. D; Ic=10 mAdc; BVCEO collector to emitter pulsed (see 4.4.1) 2N2812 60 --- | Vdc 2N2814 80 --- | Vdc Collector to base 3036 | Bias cond. D; IcBo cutoff current 2N2812 VCE = 60 Vdc -- 0.1 | pAde 2N2814 VcE = 80 Vdc --- | 0.1 | wAdc Forward current 3076 | Vcg = 5.0 Vdc; hFE 40 120 | --- transfer ratio Ic = 5.0 Adc; pulsed (see 4.4.1) Subgroup 3 10 {10 Shock 2016 | Nonoperating; 1,500 G; --- or --- | -e- 0.5 msec, 5 blows in each orientation: X4, Yj, Ya; and Z1 Vibration, variable frequency 2056 Nonoperating --- --- w-- [eee Constant acceleration 2006 { 10,000 G; in each orienta- tion: X41, Yi, Yg, and 21 End points: (Same as subgroup 2) Subgroup 4 20 }20 Salt atmosphere 1041 --- --- wer [oe (corrosion) End points: (Same as subgroup 2) Subgroup 5 10 110 Safe operating area 3051 | Tc = 100C; time = 60 sec; --- (continuous DC) 1 cycle (see figure 3a) Test 1 VcE = 5.0 Vdc; Ic = 10 Ade --- ere pees Test 2 Vcr = 10 Vde; Ic = 5.0 Ade one won | nee Test 3 2N2812 VcE = 50 Vde; Ic = 0.2 Adc -7- woo jocee 2N2814 VCE = 70 Vdc; Ic = 0.1 Adc --- cen [osseer MIL SPECS TC! MIu-S-19500 415(0SA F) TARLE TH. Group Boinspectrou - Continued J ocoo1es ooo3sis 7 MIL S$TD-750 ETePbp Limits Eraminatian a: test 4 -- a Non Method } Details TxITX Symbol Min Max Unit Subgroup 5 - Continued Safe operating area 3053 | Load cond. C; Tc = 25C --- (switching) (see figure 3b) Input pulse and bias con- ditions: test duration = 3 sec; < 0.5 msec; Re cycle < 2%; ty and ff <5 usec; VBB1= 13 Vde; RBB2 = 5.02, VBB2 = 2.5 Vde Common load and output bias conditions: Vcc = 22.5 Vdc; Rs = 12; inductor fres >5 MHz; Test 1 Ic = 10 Ade; --- e-- | --- = 30 uH; RL = 12 Test 2 = 2.0 Adc; --- eee pce L = 125 vwH; RL = 102 End points: | (Same as subgroup 2) Subgroup 6 7 \A=T High-temperature life 1031 | Tstg = +200C oo ene | eee free (nonoperating) (TX types only) High-temperature life 1032 | Tstg = + 200 C; --- ene fone [| one (nonoperating) time = 340 hours (Non-TX types only) (see 4.3.4) End points: Breakdown voltage, 3011 | Bias cond. D; BVCEO collector to emitter Ic = 10 mAdc; pulsed (see 4.4. 1) 2N2812 60 --- | Vde 2N2814 80 --- | Vde Collector to base 3036 | Bias cond. D; IcBO cutoff current 2N2812 Vcp = 60 Vde --- | 0.15] puAdc 2N2814 Vcp = 80 Vde --- | 0.15] pwAdc Forward current 3076 | Vcg = 5.0 Vde; AhFE --- | +20 |% of transfer ratio = 5.0 Adc; pulsed -10 jinitial (see 4.4.1) groupA reading iMIL-S-19500 415(USAF) 0 MIL SPECS TABLE il. Group B inspection - Continued i dooo1es 0003520 3 t TC; . | MIL-STD-739 LTPD Limits t Exomination or test : oO Snell 4 F : . Non . . : method. Details TX TX Symbol Min Max Unit Subgroup 6 - Continued End points - Continued Emitter-base cutoff 3061 | Bias cond. D; IzEBO --- | 0.15 |uAde 3 current VEB = 6.0 Vde Subgroup 7 7 A=5 Steady-state operation life 1026 |Tc = +100C; --- --- e-- |--- (TX types only) Pp = 50 W; VcE = 10 Vdc (min) Steady-state operation life 1027 |To=+ 100C; Pp = 50 W; --- --- woe eon (Non-TX types only) VCE = 10 Vdc (min); time = 340 hours (see 4.3. 4) End points: (Same as subgroup 6) TABLE Il. Group C inspection MIL-STD-750 LTPD Limits Examination or test T N Method * | Details TX Symbol Min Mox Unit Subgroup 1 15 |15 Thermal resistance 3151 @j-c |--- [2.0 [C/W Subgroup 2 10 \10 Thermal shock 1051 Test cond. C; 25 cycles; --- --- aoe fee (temperature cycling) time at temperature ex- tremes = 15 minutes (min); total test time = 72 hours max End points: (Same as subgroup 2 of group B) Subgroup 3 10 ;10 Resistance to solvents o-- Method 215 of MIL-STD-202 --- --- wre [eee (see 4.4.4) Subgroup 4 A= 10) -- High-temperature life 1031 |Tstg = +200C (see 4.3.4) o-- --- wee [eee (nonoperating) (Non-TX types only) End points: (Same as subgroup 6 of group B) 10MIL SPECS TCM cooo1es ooo03se1 s -S-19500 +77 VES TA::LE UI. Group C inspection - Continued MIL -S-189 : MIL-STD-750 LTPD Limits Examination or test Noni T { Method Details rx Symbol Min! Max Unit 3 | Subgroup 5 A=10) -- Steady-state operation life 1026 | Tc = +100C; --- --- woo taee (Non-TX types only) Pr = 50 W; VcE = 10 Vdc : min (see 4.3.4) End points: ' | (Same as subgroup 6 of group B) . f 4.5 Process-conditioning, testing, and screening for "TX'' types. The procedure for process- conditioning, testing, and screening the ''TX" types shall be in accordance with 4.5.1 through 4.5.9.1 and figure 4. Process-conditioning shall be conducted on 100 percent of the lot prior to submission of the lot to the tests specified in tables I, I, and I. (At the option of the manufacturer, the non-TX type may be subjected to process-conditioning and testing. ) 4.5.1 Quality assurance (lot verification). Quality assurance shall keep lot records for 3 years mini- mum, monitor for compliance to the prescribed procedures, and observe that satisfactory manufacturing conditions and records on lots are maintained for these devices. The records shall be available for review by the customer at alltimes. The quality assurance monitoring shall include, but not be limited to: process-conditioning, testing, and screening. (The conditioning and screening tests performed as standard production tests need not be repeated when these are predesignated and acceptable to the Government as being equal to or more severe than the tests specified herein and the relative process-conditioning sequence is maintained... 4.5.2 High-temperature storage. All devices shall be stored for at least 24 hours at a minimum temperature (Ta) of 200 C. . 4.5.3 Thermal shock (temperature cycling). All devices shall be subjected to thermal shock (temper - ature cycling) in accordance with MIL-STD-750, method 1051, test condition C, except that 10 cycles shall be continuously performed, andthe time at the temperature extremes shall be 15 minutes, minimum. 4.5.4 Acceleration. All devices shall be subjected to acceleration test in accordance with MIL-STD-750, method 2006, with the following exceptions: The test shall be performed one time in the Y1 orientation only, at a peak level of 10,000 G minimum. The one minute hold-time requirement shall not apply. 4.5.5 Hermetic seal tests. All devices shall be subjected to hermetic seal tests (fine leak followed by gross leak) with test conditions as specified in 4.5.5.1 and 4.5.5.2. Failed devices from either test shall be removed from the lot. 4.5.5.1 Fine-leak test. All devices shall be fine-leak tested in accordance with MIL-STD-750, method 1071, test condition G or H; except the leak-rate rejection criterion shall be 5 x 1077 cubic centimeters of helium per second when measured at a differential pressure of one atmosphere. 4.5.5.2 Gross-leak test. All devices shall be tested for gross-leaks in accordance with MIL-STD-750, method 1071, test condition A, C, D, or F. 11, MIL-S-19500/415(USAF) = MIL SPECS = CJ an00125 oooase2 7 20% INPUT WAVEFORM OUTPUT WAVEFORM _ -- NOTES: "1. The input waveform is supplied by a generator with the following characteristics: tr 15 nsec, tp < 15 nsec, Zoyt = Oe, tp = 20 usec, duty cycle <5 2%, 2. Waveforms are monitored on an oscilloscope witlt the following characteristics: t< <= 15 nsec, Rin = 10Ma, Cin 11.5 pf. 3. Resistors must be non-inductive types. , _ 4. The d-c power supplies may require additional by-passing in oder to minimize ringing. An fliashinh stata Mabie. -F - FIGURE 2. Pulse response test circuit. 12MIL SPECS lo ~ Collector current - amps Ic Collector current - amps IC f)oo000125 gooase3 9 ff MIL-S-19500/415(USAF) 10 0.54 0.1 esl el eneeia ta ead tween cb eatet | 5 10 50 Tele) Vee Collector-to-emitter voltage - volts. FIGURE 3a. Forward bias continuous DC. 0 40 80 {20 L Inductance - microhenries FIGURE 3b. Switching: Unclamped inductive load. FIGURE 3. Safe operating areas. 13MIL- 19500/415(USAF) MIL SPECS tcf cooo12s oooasey o 4.5.6 Reverse bias burn-in. The transistors shall be operated for 48 + 4 hours at Ta = + 150C, no heat sink shall be used, under the following test conditions: 2N2812 Vcop= 60 Vdc, Ip= 0 2N2814. Vop= 100 Vdc, Ip = 0 At the end of the 48 hour period, the above specified impressed voltage shall be maintained on the transistors until Ta = +30+5C is reached. Post test reading for Icgpo of table IV shall be conducted within 4 hours after removal of impressed voltage. Any units not meeting the limits of table IV shall be removed from the lot. 4.5.7 Preburn-in tests. The parameters ICBO, hFE, and IEBO of table IV shall be measured and the data recorded for all devices in the lot. All devices shall be handled or identified such that the delta end points can be determined after the burn-in test. All devices which fail to meet the requirements of table IV shall be removed from the lot and the quantity removed shall be noted on the lot history. TABLE IV. Burn-in test measurements MIL-STD-750 Limits . Test Method Details Symbol Min Max Unit Collector to base 3036 Bias cond. D IcBo cutoff current 2N2812 Vcp = 60 Vdc oo 0.1 pAdc 2N2814 VcR = 80 Vde vee 0.1 pAdc Forward-current 3076 Vck = 5.0 Vdc; hr 40 120 --- transfer ratio Ic = 5. 0 Ade; pulsed (see 4.4.1) , Emitter to base 3061 Bias cond. D; IzBo ooo 0.1 Adc , cutoff current VEB = 6.0 Vde ' 4.5.8 Burn-in test. All devices shall be operated for 168 hours minimum under the following conditions: Tc = +100C Vcr = 10 Vde (minimum) Pp = 50 W 4.5.9 Postburn-in tests. The parameters IcpoO, hFrE and Ippo of table IV shall be retested after burn-in and the data recorded for all devices in the lot. The parameters measured shall not have changed during the burn-in test from the initial value by more than the specified amount as follows: Alcpo = 100 percent or 10 nano-amperes, whichever is greater. AhFE = +7 percent. Almpo = 100 percent or 10 nano-amperes, whichever is greater. 4.5.9.1 Burn-in test failures (screening). All devices that exceed the delta (A) limits of 4.5.9 or the limits of table IV after burn-in, shall be removed from the inspection lot and the quantity re- moved shall be noted on the lot history. If the quantity removed after burn-in should exceed 10 per- cent of the number of devices subjected to the burn-in test, then the entire inspection lot shall be unacceptable for the "TX" type. 14MIL SPECS 1c cooo12s oooases 2 J Mu.-s-19500/415(Usar) Production Process | 1. Raw material | 2. Factory : processing Inspection Lots Lots Proposed| {Inspection Tests Review of JAN i Formed after Final | for JAN to verify LTPD Groups A, B Preparation Assembly Operation| % Types Group A , and C Data for : (sealing) (Non-TX) Group B for accept | Delivery Group C or reject | | 4 | er | Lots Proposed I for JANTX Types | 100 Percent Process Conditioning* 100 Percent Power Conditioning* Inspection | Tests to verify | 1. High-temperature storage _ /1.,Measurement of specified parameters) | LTPD | : | GroupA | 2. Thermal shock 2. Burn-in - Group B (temperature cycling) ' Group C 3. Measurement of specified parameters 3. Acceleration _ todetermine delta and other rejects 4. Hermetic seal tests 4, Lot rejection criteria based on Review of rejects from burn-in test Groups A, B, 5. Reverse bias and C Data _4 _{ {for Lot accept or reject | JANTX Preparation for Delivery } *ORDER OF THE TESTS IN THE BLOCKS SHALL BE PERFORMED AS SHOWN FIGURE 4. Order of procedure diagram for JAN (Non-TX) and JANTX types.MIL-S-19500/415(USAF) = wt) specs Tcgoono1es oooase, 4 5. PREPARATION FOR DELIVERY 5.1 See MIL-S-19500, section 5. 6. NOTES 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Ordering data. Inspection data (see 4.3). 6.3 The activity responsible for the Qualified Products List is Rome Air Development Center, Attn: EMTSA, Griffiss Air Force Base, New York 13440; however, information pertaining to the qualification of products may be obtained from the Defense Electronics Supply Center, 1507 Wilmington Pike, Dayton, Ohio 45401. Custodian: Preparing activity: Air Force - 17 Air Force - 17 Review activities: Agent: DSA - ES Air Force - 11, 85 (Project 5961-F208) 16