A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 100 mA 25 V
BVCES IC = 100 mA 55 V
BVEBO IE = 5.0 mA 3.5 V
hFE VCE = 5.0 V IC = 1.0 A 20 100 ---
PG
η
ηη
ηC VCC = 25 V POUT = 85 W f = 900 MHz
ICQ = 200 mA
8.5
50 9.5
dB
%
Ψ
ΨΨ
Ψ VCC = 25 V POUT = 60 W f = 900 MHz
ICQ = 200 mA
10:1 ---
NPN SILICON RF POWER TRANSISTOR
PTB20111
DESCRIPTION:
The ASI PTB20111 is Designed for
General Purpose Class AB Power
Amplif ier Applications up to 900 MHz.
FEATURES:
• 25 W, 860-900 MHz
• Silicon Nitride Passivated
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO 65 V
PDISS 159 W @ TC = 25 °C
TJ -40 °C to +150 °C
TSTG -40 °C to +150 °C
θ
θθ
θJC 1.1 °C/W
PACKAGE STYLE .400 2L FLG
1 = COLLECTOR 2 = EMITTER 3 = BASE
