6-310
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.5 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P1 dB at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
MSA-0385
85 Plastic Package
Description
The MSA-0385 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
>
7 V
V
d
= 5 V
RFC (Optional)
IN OUT
MSA
4
12
3
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9570E
6-311
MSA-0385 Absolute Maximum Ratings
Parameter Absolute Maximum[1]
Device Current 70 mA
Power Dissipation[2,3] 400 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150°C
Thermal Resistance[2,4]:
θjc = 105°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE
= 25°C.
3. Derate at 9.5 mW/°C for TC > 108°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
GPPower Gain (|S21|2) f = 0.1 GHz dB 12.5
f = 1.0 GHz 10.0 12.0
∆GPGain Flatness f = 0.1 to 1.6 GHz dB ±0.7
f3 dB 3 dB Bandwidth GHz 2.5
Input VSWR f = 0.1 to 3.0 GHz 1.5:1
Output VSWR f = 0.1 to 3.0 GHz 1.7:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
IP3Third Order Intercept Point f = 1.0 GHz dBm 23.0
tDGroup Delay f = 1.0 GHz psec 125
VdDevice Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 ΩUnits Min. Typ. Max.
VSWR
6-312
MSA-0385 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .09 178 12.6 4.26 175 –18.1 .124 2 .13 –10
0.2 .09 171 12.5 4.24 170 –18.4 .120 3 .13 –20
0.4 .08 166 12.4 4.17 161 –18.4 .121 6 .14 –41
0.6 .07 160 12.3 4.10 151 –18.0 .126 8 .15 –57
0.8 .07 155 12.1 4.01 142 –17.9 .127 12 .16 –71
1.0 .06 152 11.9 3.92 133 –17.6 .132 12 .18 –84
1.5 .05 –169 11.2 3.63 112 –16.5 .149 18 .21 –112
2.0 .08 –174 10.4 3.29 92 –15.6 .167 19 .23 –136
2.5 .12 –173 9.5 2.98 79 –14.6 .186 22 .25 –150
3.0 .20 178 8.4 2.64 63 –14.1 .198 20 .26 –166
3.5 .25 170 7.5 2.36 47 –13.5 .211 17 .25 –174
4.0 .28 160 6.5 2.12 33 –13.0 .207 13 .24 –180
5.0 .42 134 4.7 1.71 7 –12.2 .224 4 .20 168
6.0 .50 99 2.7 1.37 –18 –12.0 .252 –7 .23 133
A model for this device is available in the DEVICE MODELS section.
S11 S21 S12 S22
Typical Performance, TA = 25°C
(unless otherwise noted)
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 35 mA.
0
2
4
6
8
10
12
14
Gain Flat to DC
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
60
I
d
(mA)
0 234561
40
50 T
C
= +85°C
T
C
= +25°C
T
C
= –25°C
I
d
(mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
G
p
(dB)
15 25 30 40 503520
5
6
7
11
12
13
–25 0 +25 +55 +85
8
9
10
P
1 dB
(dBm)
NF (dB)
G
P
NF
G
p
(dB)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=35mA.
P
1 dB
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
0
3
6
9
12
15
18
P
1 dB
(dBm)
I
d
= 50 mA
I
d
= 20 mA
I
d
= 35 mA
5.5
5.0
6.0
6.5
7.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
I
d
= 20 mA
I
d
= 35 mA
I
d
= 50 mA
6-313
13
4
2
5° TYP.
45°
GROUND
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.085
2.15
.286 ± .030
7.36 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
mm
.020
.51
.07
0.43
.060 ± .010
1.52 ± .25 .006 ± .002
.15 ± .05
0.143 ± 0.015
3.63 ± 0.38
85 Plastic Package Dimensions
A03
