SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. . Low Forward Voltage : Vr=0.42V(Typ.) . Low Reverse Current : Ip=500nA(Max.) Small Package : SOT-23MOD MAXIMUM RATINGS (Ta=25C) 1$$321 Unit in mm 19 0.95 0.95 2.9+0.2 _ ise} CHARACTERISTIC SYMBOL RATING UNIT maT | 4 3s oS Maximum(Peak Reverse Voltage VRM 12 V i] | = Reverse Voltage VR 10 Vv S Maximum(Peak Forward Current IPM 150 mA ? oa Average Forward Current lo 50 mA iq 3 1. ANODE 1 Surge Current (t=10ms) IFSM 1 A 2. ANODE 2 2 3. CATHODE 1,2 Power Dissipation P 150 mW JEDEC _ Junction Temperature Tj 125 EIAJ SC_59 Storage Temperature Range Tstg -55~125 TOSHIBA 1-3G1F Weight : 0.013g ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.] UNIT VE(1) Ipelma - 0.32 - Forward Voltage VF(2) IF=LOmA ~ 10.42 - v VF(3) IF=50mA - 0.63 [1.00 | Reverse Current Ir Vp= Lov ~ ~ 500 nA Total Capacitance CT Vp=0, f=1MHz - 3.2 4.5 pF Marking BA FQ || 8 1179 1$$321 Ip VR 50m Wk 5a 10m 3n = 2 Ne le a fe & ~ 1m & 5000 3 fy & 2 3000 o 5 Q e a s a = fa 5 E100 g 10 100 # 500 30n 10a 10n 0 0.2 0.4 0.6 08 1.0 0 2 4 6 8 10 12 FORWARD VOLTAGE Vp (V) REVERSE VOLTAGE Vag () Cr Yr Ta=25C f= 1MHz TOTAL CAPACITANCE Cr (pF) O.1 03 05 1 3. 5 10 REVERSE VOLTAGE Vp (V) 1180