CM1000DXL-24S - Mitsubishi Electric & Electronics USA, Inc.

Publication Date : April 2013

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Collector current IC .............….......................… 900A *

Collector-emitter voltage VCES ......................… 1200V

Maximum junction temperature Tjmax .............. 175°C

●Flat base Type

●Copper base plate (non-plating)

●Tin plating pin terminals

●RoHS Directive compliant

●Recognized under UL1557, File E323585

Dual switch (Half-Bridge) *. DC current rating is limited by power terminals.

APPLICATION

AC Motor Control, Motion/Servo Control, Power supply, etc.

OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm

TERMINAL SECTION A

INTERNAL CONNECTION

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

t=0.8

The tolerance of size between

terminals is assumed to be ±0.4.

(1)

Di1 Di2

Tr1

NTC

TH1

(56)

TH2

(57)

Cs1

(52)

Tr2

(46)

Es2

(47)

Cs2

(42)

(2)

(3)

(4)

(61)

Es1

(62)

C2E1

(33)

C2E1

(32)

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2013

ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWDi

Symbol Item Conditions Rating Unit

VCES Collector-emitter voltage G-E short-circuited 1200 V

VGES Gate-emitter voltage C-E short-circuited ± 20 V

IC DC, TC=124 °C (Note.2, 4) 900 *

ICRM Collector current Pulse, Repetitive (Note.3) 2000

Ptot Total power dissipation TC=25 °C (Note.2, 4) 7500 W

IE (Note.1) (Note.2) 900 *

IERM (Note.1) Emitter current Pulse, Repetitive (Note.3) 2000

MODULE

Symbol Item Conditions Rating Unit

Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V

Tjmax Maximum junction temperature Instantaneous event (overload) 175

TCmax Maximum case temperature (Note4) 125

°C

Tjop Operating junction temperature Continuous operation (under switching) -40 ~ +150

Tstg Storage temperature - -40 ~ +125 °C

ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWDi

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA

IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA

VGE(th) Gate-emitter threshold voltage IC=100 mA, VCE=10 V 5.4 6.0 6.6 V

IC=1000 A (Note.5) , T j=25 °C - 1.85 2.30

VGE=15 V, T j=125 °C - 2.05 -

(Terminal) Tj=150 °C - 2.10 -

IC=1000 A (Note.5) , T j=25 °C - 1.70 2.15

VGE=15 V, T j=125 °C - 1.90 -

VCEsat Collector-emitter saturation voltage

(Chip) T j=150 °C - 1.95 -

Cies Input capacitance - - 100

Coes Output capacitance - - 20

Cres Reverse transfer capacitance

VCE=10 V, G-E short-circuited

- - 1.7

QG Gate charge VCC=600 V, IC=1000 A, VGE=15 V - 2300 - nC

td(on) Turn-on delay time - - 800

tr Rise time VCC=600 V, IC=1000 A, VGE=±15 V, - - 200

td(off) Turn-off delay time - - 600

tf Fall time RG=0 Ω, Inductive load - - 300

IE=1000 A (Note.5) , T j=25 °C - 1.85 2.30

G-E short-circuited, T j=125 °C - 1.85 -

(Terminal) T j=150 °C - 1.85 -

IE=1000 A (Note.5) , T j=25 °C - 1.70 2.15

G-E short-circuited, T j=125 °C - 1.70 -

VEC (Note.1) Emitter-collector voltage

(Chip) T j=150 °C - 1.70 -

trr (Note.1) Reverse recovery time VCC=600 V, IE=1000 A, VGE=±15 V, - - 300 ns

Qrr (Note.1) Reverse recovery charge RG=0 Ω, Inductive load - 53.3 - μC

Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=1000 A, - 45.6 -

Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, T j=150 °C, - 97.1 - mJ

Err (Note.1) Reverse recovery energy per pulse Inductive load - 96.7 - mJ

Main terminals-chip, per switch,

RCC'+EE' Internal lead resistance TC=25 °C (Note.2) - - 0.5 mΩ

rg Internal gate resistance Per switch - 2.0 - Ω

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2013

ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)

NTC THERMISTOR PART

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

R25 Zero-power resistance TC=25 °C (Note.2) 4.85 5.00 5.15 kΩ

∆R/R Deviation of resistance TC=100 °C, R100=493 Ω -7.3 - +7.8 %

B(25/50) B-constant Approximate by equation

(Note.6) - 3375 - K

P25 Power dissipation TC=25 °C (Note.2) - - 10 mW

THERMAL RESISTANCE CHARACTERISTICS

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

Rth(j-c)Q Junction to case, per Inverter IGBT - - 20 K/kW

Rth(j-c)D Thermal resistance (Note.2) Junction to case, per Inverter FWDi - - 38 K/kW

Case to heat sink, per 1 module,

Rth(c-s) Contact thermal resistance (Note.2) Thermal grease applied (Note.7) - 7 - K/kW

MECHANICAL CHARACTERISTICS

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

Mt Main terminals M 6 screw 3.5 4.0 4.5 N·m

Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m

Terminal to terminal 13.2 - -

ds Creepage distance Terminal to base plate 15.3 - - mm

Terminal to terminal 13.2 - -

da Clearance Terminal to base plate 14.8 - - mm

m Weight - - 690 - g

ec Flatness of base plate On the centerline X, Y (Note.8) ±0 - +100 μm

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).

2. Case temperature (TC) and heat sink temperature (T s) are defined on the each surface (mounting side) of base plate and heat sink just under

the chips. Refer to the figure of chip location.

The heat sink thermal resistance should measure just under the chips.

3. Pulse width and repetition rate should be such that the device junction temperature (T j) dose not exceed T jmax rating.

4. Junction temperature (T j) should not increase beyond Tjmax rating.

5. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Refer to the figure of test circuit.

6. )

/()

ln(B )/( 502550

5025 11 

R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]

R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]

7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

8. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

+: Convex

-: Concave

+: Convex

-: Concave

mounting side

Label side

mounting side

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2013

Note9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.

"M2.6×10 or M2.6×12 self tapping screw"

The length of the screw depends on the thickness of the PCB.

*. DC current rating is limited by power terminals.

RECOMMENDED OPERATING CONDITIONS (Ta=25 °C)

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

VCC (DC) Supply voltage Applied across C1-E2 - 600 850 V

VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V

RG External gate resistance Per switch 0 - 5.1 Ω

CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm

Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2013

TEST CIRCUIT AND WAVEFORMS

32/33

3/4

Shor

circuited

1/2

VGE=15 V

Es2

Es1

Short-

circuited

VGE =15 V

Cs1

Cs2

32/33

3/4

Shor

circuited

1/2

Shor

circuited

Es2

Es1

Short-

circuited

Cs1

Cs2

Short

circuited

Tr1 Tr2 Di1 Di2

VCEsat test circuit VEC test circuit

～

td(on)

10%

90 %

vGE

VCC

-VGE

+VGE

-V

Load

～

0 V

0 A

vGE

0 V

td(off)

C2E1

Es1

Es2

Cs1

Cs2

Irr

Qrr=0.5×Irr×trr

0.5×Irr

trr

0 A

Switching characteristics test circuit and waveforms trr, Qrr test waveform

0.1×I

0.1×V

t0 0.02×I

IEM

vEC

t0 V

VCC

0 A

IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy

Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2013

PERFORMANCE CURVES

INVERTER PART

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

Tj=25 °C (Chip) VGE=15 V (Chip)

COLLECTOR CURRENT IC (A)

200

400

600

800

1000

1200

1400

1600

1800

2000

0246810

COLLECTOR-EMITTER

SATURATION VOLTAGE VCEsat (V)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 200 400 600 800 1000 1200 1400 1600 1800 2000

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

FREE WHEELING DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

Tj=25 °C (Chip) G-E short-circuited (Chip)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCEsat (V)

6 8 10 12 14 16 18 20

EMITTER CURRENT IE (A)

100

1000

10000

0.00.51.01.52.02.53.0

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

Tj=150 °C

Tj=125 °C

Tj=25 °C

VGE=20 V

12 V

11 V

10 V

9 V

13.5 V

15 V

Tj=150 °C

Tj=125 °C

Tj=25 °C

IC=2000 A

IC=1000 A

IC=400 A

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2013

PERFORMANCE CURVES

INVERTER PART

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: Tj=125 °C

VCC=600 V, IC=1000 A, VGE=±15 V, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: Tj=125 °C

SWITCHING TIME (ns)

100

1000

10 100 1000

WITCHING TIME t d(on), t r (ns)

100

1000

0.1 1 10 100

100

1000

10000

SWITCHING TIME t d(off), tf (ns)

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=0 Ω,

INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: Tj=125 °C

VCC=600 V, IC/IE=1000 A, VGE=±15 V,

INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: Tj=125 °C

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

100

10 100 1000

SWITCHING ENERGY Eon, Eoff (mJ)

100

1000

0.1 1 10 100

100

1000

10000

REVERSE RECOVERY ENERGY Err (mJ)

COLLECTOR CURRENT IC (A)

EMITTER CURRENT IE (A)

EXTERNAL GATE RESISTANCE RG (Ω)

Eon

Eoff

Err

Eon

Eoff

Err

td(on)

td(off)

td(on)

td(off)

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2013

PERFORMANCE CURVES

INVERTER PART

CAPACITANCE CHARACTERISTICS

(TYPICAL)

FREE WHEELING DIODE

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

G-E short-circuited, Tj=25 °C

VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: Tj=125 °C

CAPACITANCE (nF)

0.1

100

1000

0.1 1 10 100

trr (ns), Irr (A)

100

1000

10 100 1000

COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)

GATE CHARGE CHARACTERISTICS

(TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

(MAXIMUM)

VCC=600 V, IC=1000 A, Tj=25 °C

Single pulse, TC=25°C

Rth(j-c)Q=20 K/kW, Rth(j-c)D=38 K/kW

GATE-EMITTER VOLTAGE VGE (V)

0 500 1000 1500 2000 2500 3000 3500

NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

GATE CHARGE QG (nC) TIME (S)

Cies

Coes

Cres

Irr

trr

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2013

PERFORMANCE CURVES

NTC thermistor part

TEMPERATURE CHARACTERISTICS

(TYPICAL)

RESISTANCE R (kΩ)

0.1

100

-50 -25 0 25 50 75 100 125

TEMPERATURE T (°C)

< IGBT MODULES >

CM1000DXL-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : April 2013

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