1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features
nHigh switching speed: trr ≤4ns
nReverse voltage: VR≤75 V
nRepetitive peak reverse voltage: VRRM ≤100 V
nRepetitive peak forward current: IFRM ≤450 mA
nSmall hermetically sealed glass SMD package
1.3 Applications
nHigh-speed switching
nReverse polarity protection
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
BAS32L
High-speed switching diode
Rev. 06 — 29 October 2008 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IFforward current [1] - - 200 mA
IFRM repetitive peak forward
current - - 450 mA
VRreverse voltage - - 75 V
VFforward voltage IF= 100 mA - - 1000 mV
trr reverse recovery time [2] --4ns
BAS32L_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 29 October 2008 2 of 10
NXP Semiconductors BAS32L
High-speed switching diode
2. Pinning information
[1] The marking band indicates the cathode.
3. Ordering information
4. Marking
[1] black: made in Philippines
brown: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode [1]
2 anode ka
006aab040
2
1
Table 3. Ordering information
Type number Package
Name Description Version
BAS32L - hermetically sealed glass surface-mounted package;
2 connectors SOD80C
Table 4. Marking codes
Type number Marking code[1]
BAS32L marking band
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse
voltage - 100 V
VRreverse voltage - 75 V
IFforward current [1] - 200 mA
IFRM repetitive peak forward
current - 450 mA
IFSM non-repetitive peak forward
current square wave [2]
tp=1µs-4A
tp=1ms - 1 A
tp= 1 s - 0.5 A
Ptot total power dissipation Tamb =25°C[1] - 500 mW
BAS32L_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 29 October 2008 3 of 10
NXP Semiconductors BAS32L
High-speed switching diode
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Tj=25°C prior to surge.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
[2] When switched from IF= 50 mA; tr=20ns.
Tjjunction temperature - 200 °C
Tamb ambient temperature −65 +200 °C
Tstg storage temperature −65 +200 °C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 350 K/W
Rth(j-sp) thermal resistance from
junction to solder point - - 300 K/W
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage IF= 5 mA 620 - 750 mV
IF= 100 mA - - 1000 mV
IF= 100 mA; Tj= 100 °C - - 930 mV
IRreverse current VR=20V --25nA
VR=75V --5µA
VR= 20 V; Tj= 150 °C--50µA
VR= 75 V; Tj= 150 °C - - 100 µA
Cddiode capacitance VR= 0 V; f = 1 MHz - - 2 pF
trr reverse recovery
time [1] --4ns
VFR forward recovery
voltage [2] - - 2.5 V
BAS32L_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 29 October 2008 4 of 10
NXP Semiconductors BAS32L
High-speed switching diode
FR4 PCB, standard footprint (1) Tj= 175 °C; typical values
(2) Tj=25°C; typical values
(3) Tj=25°C; maximum values
Fig 1. Forward current as a function of ambient
temperature; derating curve Fig 2. Forward current as a function of forward
voltage
Based on square wave currents.
Tj=25°C prior to surge (1) VR= 75 V; maximum values
(2) VR= 75 V; typical values
(3) VR= 20 V; typical values
Fig 3. Non-repetitive peak forward current as a
function of pulse duration; maximum values Fig 4. Reverse current as a function of junction
temperature
0 100 200
300
200
0
100
mbg451
Tamb (°C)
IF
(mA)
012
600
0
200
400
mbg464
VF (V)
IF
(mA)
(1) (2) (3)
mbg704
10
1
102
IFSM
(A)
10−1
tp (µs)
110
4
103
10 1020 100 Tj (°C) 200
103
102
10−1
10−2
10 (1) (2)
1
IR
(µA)
mgd006
(3)
BAS32L_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 29 October 2008 5 of 10
NXP Semiconductors BAS32L
High-speed switching diode
8. Test information
f = 1 MHz; Tj=25°C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
01020
1.2
1.0
0.6
0.4
0.8
mgd004
VR (V)
Cd
(pF)
Input signal: Reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty factor δ≤0.05
Oscilloscope: Rise time tr= 0.35 ns
(1) IR=1mA
Fig 6. Reverse recovery time test circuit and waveforms
Input signal: Forward pulse rise time tr= 20 ns; forward current pulse duration tp≥100 ns; duty factor δ≤0.005
Fig 7. Forward recovery voltage test circuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50 ΩIF
D.U.T.
Ri = 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
trt
tp
10 %
90 %
I
input signal
RS = 50 Ω
I
Ri = 50 Ω
OSCILLOSCOPE
1 kΩ450 Ω
D.U.T.
mga882
VFR
t
output signal
V
BAS32L_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 29 October 2008 6 of 10
NXP Semiconductors BAS32L
High-speed switching diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 8. Package outline SOD80C
06-03-16Dimensions in mm
1.60
1.45
0.3
3.7
3.3
0.3
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
2500 10000
BAS32L SOD80C 4 mm pitch, 8 mm tape and reel -115 -135
BAS32L_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 29 October 2008 7 of 10
NXP Semiconductors BAS32L
High-speed switching diode
11. Soldering
Fig 9. Reflow soldering footprint SOD80C
Fig 10. Wave soldering footprint SOD80C
sod080c
2.30
4.30
4.55
1.601.702.25
0.90
(2x)
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
sod080c
2.70
4.90
6.30
1.702.90
1.90
solder lands
tracks
solder resist
occupied area
Dimensions in mm
BAS32L_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 29 October 2008 8 of 10
NXP Semiconductors BAS32L
High-speed switching diode
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAS32L_6 20081029 Product data sheet - BAS32L_5
Modifications: •Figure 8: amended
•Section 13 “Legal information”: updated
BAS32L_5 20080103 Product data sheet - BAS32L_4
BAS32L_4 20050322 Product data sheet - BAS32L_3
BAS32L_3 20020123 Product specification - BAS32L_2
BAS32L_2 19960910 Product specification - BAS32L_1
BAS32L_1 19960423 Product specification - -
BAS32L_6 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 06 — 29 October 2008 9 of 10
NXP Semiconductors BAS32L
High-speed switching diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BAS32L
High-speed switching diode
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 October 2008
Document identifier: BAS32L_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 6
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
