PART OBSOLETE - USE BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 JUNE 1996 PARTMARKING DETAILS BC807 5DZ BC807-16 5AZ BC807-25 5BZ BC807-40 5CZ BC807 BC808 BC808 5HZ BC808-16 5EZ BC808-25 5FZ BC808-40 5GZ COMPLEMENTARY TYPES BC807 BC808 E C B BC817 BC818 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC807 BC808 UNIT Collector-Base Voltage VCBO -50 -30 V Collector-Emitter Voltage VCEO -45 -25 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A V Continuous Collector Current IC -500 mA Base Current IB -100 mA Peak Base Current I BM -200 mA Power Dissipation at Tamb=25C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector Cut-Off Current ICBO -0.1 -5 A A VCB=-20V, IE=0 VCB=-20V, IE=0, Tamb=150C Emitter Cut-Off Current IEBO -10 A VEB=-5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -700 mV IC=-500mA, IB=-50mA* Base-Emitter Turn-on Voltage VBE(on) -1.2 V IC=-500mA, VCE=-1V* Static Forward Current Transfer Ratio hFE 100 40 600 IC=-100mA, VCE=-1V* IC=-500mA, VCE=-1V* -16 100 250 IC=-100mA, VCE=-1V* -25 160 400 IC=-100mA, VCE=-1V* -40 250 600 IC=-100mA, VCE=-1V* Transition Frequency fT 100 MHz IC=-10mA, VCE=-5V f=35MHz Collector-base Capacitance Cobo 8.0 pF IE=Ie=0, VCB=-10V f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices 3-9