ZXM64P03X
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1 µAVDS=-30V, VGS=0V
Gate-Body Leakage IGSS ±100 nA VGS=±20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250µA,
VDS=V
GS
Static Drain-Source On-State Resistance
(1)
RDS(on) 0.075
0.100
Ω
Ω
VGS=-10V, ID=-2.4A
VGS=-4.5V, ID=-1.2A
Forward Transconductance (3) gfs 2.3 S VDS=-10V,ID=-1.2A
DYNAMIC (3)
Input Capacitance Ciss 825 pF
VDS=-25 V, VGS=0V,
f=1MHz
Output Capacitance Coss 250 pF
Reverse Transfer Capacitance Crss 80 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 4.4 ns
VDD =-15V, ID=-2.4A
RG=6.2Ω,R
D=6.2Ω
(Refer to test
circuit)
Rise Time tr6.2 ns
Turn-Off Delay Time td(off) 40 ns
Fall Time tf29.2 ns
Total Gate Charge Qg46 nC
VDS=-24V,VGS=-10V,
ID=-2.4A
(Refer to test
circuit)
Gate-Source Charge Qgs 9nC
Gate Drain Charge Qgd 11.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-2.4A,
VGS=0V
Reverse Recovery Time (3) trr 30.2 ns Tj=25°C, IF=-2.4A,
di/dt= 100A/µs
Reverse Recovery Charge(3) Qrr 27.8 nC
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.