Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Typ Max
48 62.5
74 110
RθJL 35 40
Maximum Junction-to-Lead CSteady-State °C/W
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
TA=70°C 1.44 W
Power Dissipation
TA=25°C PD
2
A
TA=70°C 5.8
Pulsed Drain Current B40
Continuous Drain
Current A
TA=25°C
ID
6.9
Drain-Source Voltage 30 V
Gate-Source Voltage ±12 V
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Maximum Units
AO4800
Dual N-Channel Enhancement Mode Field Effect Transistor
July 2001
Features
VDS (V) = 30V
ID = 6.9A
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
General Description
The AO4800 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in
buck converters.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5G1
D1
S1
G2
D2
S2
SOIC-8
Alpha & Omega Semiconductor, Ltd.
AO4800
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 0.7 1 1.4 V
ID(ON) 25 A
22.6 27
TJ=125°C 33 40
27 32 m
Ω
42 50 m
Ω
gFS 12 16 S
VSD 0.71 1 V
IS3A
Ciss 858 pF
Coss 110 pF
Crss 80 pF
Rg1.24
Ω
Qg9.6 nC
Qgs 1.65 nC
Qgd 3nC
tD(on) 5.7 ns
tr13 ns
tD(off) 37 ns
tf4.2 ns
trr Body Diode Reverse Recovery time 15.5 ns
Qrr Body Diode Reverse Recovery charge 7.9 nC
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=6.9A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=6Ω
Output Capacitance
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance VGS=0V, VDS=0V, f=1MHz
Forward Transconductance VDS=5V, ID=5A
Diode Forward Voltage IS=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6.9A mΩ
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=5A
Gate Threshold Voltage VDS=VGS ID=250µA
On state drain current VGS=4.5V, VDS=5V
VDS=24V, VGS=0V µA
Gate-Body leakage current VDS=0V, VGS=±12V
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
Electrical Characteristics (T
J=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=2V
2.5
V
3V
4.5V
10V
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5 3
VGS (Volts)
Figure 2: Transfer Characteristics
ID(A)
10
20
30
40
50
60
0 5 10 15 20
ID (Amps)
Figure 3: On-Resistance vs. Drain Current an
d
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD (Volts)
Figure 6: Body diode characteristics
IS Amps
125°C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0 50 100 150 200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=2.5V
VGS=10V
VGS=4.5V
10
20
30
40
50
60
70
0246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125
°
C
VDS=5V
VGS=2.5V
V
GS
=4.5
V
VGS=10V
ID=5A
125°C
25°C
25°C
ID=5A
Alpha & Omega Semiconductor, Ltd.
AO4800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
024681012
Qg (nC)
Figure 7: Gate-Charge characteristics
VGS (Volts)
0
250
500
750
1000
1250
1500
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power W
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
C
oss
Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
1
0
m
s
1ms
0.1s
1
s
10s
D
C
RDS(ON)
limite
d
TJ(Max)=150°C
T
A
=25°C
VDS=15V
ID=6.9A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
T
A
=25°C
f=1MHz
VGS=0V
Alpha & Omega Semiconductor, Ltd.
θ
E
θ
h
L
aaa
b
E1
c
e
D
A
A2
A1
SYMBOLS
0.050 BSC
0.50
1.27
8°
0.10
0.10
5.00
6.20
4.00
0.51
0.25
−−−
1.55
−−−5.80
0°
0.25
0.40
−−− −−−
−−−
−−−
−−−
1.27 BSC
0.19
3.80
4.80
1.45
0.33
−−−
0.00
−−−
−−−
−−−
−−−
1.50
1.45
−−−
−−−0.228
0.010
0.016
−−−
0°−−−
−−−
−−−
−−−
0.057
0.007
0.013
−−−
0.150
0.189
0.000
−−−
−−−
−−−
−−−
0.059
0.057
−−−
0.244
8°
0.020
0.050
0.004
0.010
0.157
0.197
0.061
0.020
−−−
0.004
DIMENSIONS IN INCHESDIMENSIONS IN MILLIMETERS
MAXMIN NOM MIN NOM MAX
SO-8 Package Data
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
RECOMMENDED LAND PATTERNPACKAGE MARKING DESCRIPTION
NOTE:
LG - AOS LOGO
PARTN - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L N - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
PART NO.
AO4400
AO4401
CODE
4401
4400 4800
CODE
AO4800
AO4801
PART NO.
4801 4700
CODE
AO4700
AO4701
PART NO.
4701
UNIT: mm
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
ALPHA & OMEGA
SEMICONDUCTOR, INC.
