Radar Pulsed Power Transistor
300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products
Released, 30 May 07
PH1214-300M
1 North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
NPN silicon microwave p ower transistors
Common base configuration
Broadband Class C op eration
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 90 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 21.0 A
Power Dissipation @ +25 °C PTOT 583 W
Storage Temperature TSTG -65 to +200 °C
Junction Temperature Tj 200 °C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Outline Drawing
Parameter Test Conditions Frequency Symbol Min Max Units
Collector-Emitter Breakdown Voltage IC = 80mA BVCES 90 - V
Collector-Emitter Leakage Current VCE = 40V ICES - 10 mA
Thermal Resistance Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 0.30 °C/W
Output Power Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz POUT 300 - W
Power Gain Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz GP 8.75 - dB
Collector Efficiency Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz ηC 50 - %
Input Return Loss Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz RL - -10 dB
Pulse Droop Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz Droop - 1.0 dB
Load Mismatch Tolerance Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz VSWR-T - 2:1 -
Load Mismatch Stability Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz VSWR-S - 1.5:1 -
Radar Pulsed Power Transistor
300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products
Released, 30 May 07
PH1214-300M
2 North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical RF Performance
Note: ΔPo(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 40W.
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
ΔGain
(dB)
Ic
(A)
Eff.
(%)
Droop
(dB)
RL
(dB)
P1dB Overdrive VSWR-S
Pout
(W)
ΔPout
(dB)
Gain
(dB)
Droop
(dB)
Eff.
(%) 1.5:1 2:1 2.5:1
1.2 40 406 10.06
0.82
16.1 63.2 0.10 -18 451 0.46 9.52 0.38 59.8 S S S
1.3 40 355 9.48 15.0 59.3 0.04 -15 412 0.65 9.12 0.32 58.2 S S S
1.4 40 336 9.24 14.4 58.4 0.06 -16 378 0.51 8.75 0.35 56.0 S S S
Gain vs. Frequency Collector Efficiency vs. Frequency
8.4
8.8
9.2
9.6
10.0
10.4
1.20 1.25 1.30 1.35 1.40
Fr e q (GHz)
Gain (dB)
46
50
54
58
62
66
1.20 1.25 1.30 1.35 1.40
Fr e q (GHz)
Efficiency (%)
Radar Pulsed Power Transistor
300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products
Released, 30 May 07
PH1214-300M
3 North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
RF Power Transfer Curve
(Output Power Vs. Input Power)
F (GHz) ZIF () ZOF ()
1.2 1.9 - j2.3 1.3 - j1.6
1.3 1.9 - j1.7 1.2 - j1.2
1.4 1.8 - j1.4 1.0 - j0.9
Broadband Test Fixture Impedance
PH1214-300M Pout vs. Pin
0
100
200
300
400
500
0 102030405060
Pin (W)
Pout (W)
1. 2 GHz
1. 3 GHz
1. 4 GHz
Radar Pulsed Power Transistor
300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products
Released, 30 May 07
PH1214-300M
4 North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Test Fixture Circuit Dimensions
Test Fixture Assembly