
Radar Pulsed Power Transistor
300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products
Released, 30 May 07
PH1214-300M
1 • North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• NPN silicon microwave p ower transistors
• Common base configuration
• Broadband Class C op eration
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 90 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 21.0 A
Power Dissipation @ +25 °C PTOT 583 W
Storage Temperature TSTG -65 to +200 °C
Junction Temperature Tj 200 °C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Outline Drawing
Parameter Test Conditions Frequency Symbol Min Max Units
Collector-Emitter Breakdown Voltage IC = 80mA BVCES 90 - V
Collector-Emitter Leakage Current VCE = 40V ICES - 10 mA
Thermal Resistance Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 0.30 °C/W
Output Power Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz POUT 300 - W
Power Gain Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz GP 8.75 - dB
Collector Efficiency Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz ηC 50 - %
Input Return Loss Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz RL - -10 dB
Pulse Droop Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz Droop - 1.0 dB
Load Mismatch Tolerance Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz VSWR-T - 2:1 -
Load Mismatch Stability Vcc = 40V, Pin = 40W F = 1.2, 1.3, 1.4 GHz VSWR-S - 1.5:1 -