CAS300M12BM2 VDS1.2 kV 1.2kV, 4.2 m All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-RecTM Diode Esw, Total @ 300A Package Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications * * * * * 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits * * * * * 4.2 m RDS(on) Features * * * * * * * 12 mJ Induction Heating Motor Drives Solar and Wind Inverters UPS and SMPS Traction Part Number Package Marking CAS300M12BM2 Half-Bridge Module CAS300M12BM2 Test Conditions Notes Maximum Ratings (TC = 25C unless otherwise specified) Symbol BM2,Rev.A Value Unit VDSmax Drain - Source Voltage 1.2 kV VGSmax Gate - Source Voltage -10/+25 V Absolute Maximum values VGSop Gate - Source Voltage -5/+20 V Recommended Operational Values ID S300M12 Datasheet: CA Parameter 423 Continuous Drain Current 293 A ID(pulse) Pulsed Drain Current 1500 A TJmax Junction Temperature 150 C -40 to +125 C TC ,TSTG Case and Storage Temperature Range VGS = 20 V, TC = 25 C VGS = 20 V, TC = 90 C Fig. 26 Pulse width tP limited by Tjmax Visol Case Isolation Voltage 5.0 kV AC, 50 Hz , 1 min LStray Stray Inductance 15 nH Measured between terminals 2 and 3 PD Power Dissipation 1668 W TC = 25 C, TJ = 150 C Subject to change without notice. www.cree.com Fig. 25 1 Electrical Characteristics (TC = 25C unless otherwise specified) Symbol VDSS VGS(th) Parameter Drain - Source Blocking Voltage 1.2 Gate Threshold Voltage 1.8 IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. On State Resistance Typ. Max. Unit kV 2.5 Test Conditions VGS, = 0 V, ID = 2 mA V VDS = 10 V, ID = 15 mA 2000 A VDS = 1.2 kV, VGS = 0V 1 100 nA VGS = 20 V, VDS = 0V 4.2 5.3 600 Note Fig 7 VDS = 1.2 kV,VGS = 0V, TJ = 150 C 1500 VGS = 20 V, IDS = 300 A m 7.7 156 VDS = 20 V, IDS = 300 A Fig. 4, 5, 6 Fig. 8 gfs Transconductance Ciss Input Capacitance 19.3 Coss Output Capacitance 2.57 Crss Reverse Transfer Capacitance 0.12 Eon Turn-On Switching Energy 5.8 mJ EOff Turn-Off Switching Energy 6.1 mJ f = 200 kHz, VAC = 25 mV nC VDD= 800 V, VGS = -5V/+20V, ID= 300 A, Per JEDEC24 pg 27 Fig. 15 VDD = 600V, VGS = -5/+20V, ID = 300 A, RG(ext) = 2.5 , Timing relative to VDS Note: IEC 60747-8-4, pg 83 Inductive load Fig. 23 IF = 300 A, VGS = 0 Fig. 10 RG (int) S VGS = 20 V, IDS = 300 A, TJ = 150 C 144 nF Internal Gate Resistance 3.0 QGS Gate-Source Charge 166 QGD Gate-Drain Charge 475 QG Total Gate Charge 1025 td(on) Turn-on delay time 76 ns Rise Time 68 ns 168 ns tr td(off) tf Turn-off delay time Fall Time 43 VSD Diode Forward Voltage QC Total Capacitive Charge ns 1.6 2.0 2.0 3.2 V VDS = 20 V, ID = 300 A, TJ = 150 C VDS = 600 V, f = 200 kHz, VAC = 25 mV Fig. 16, 17 VDD = 600 V, VGS = -5V/+20V ID = 300 A, RG(ext) = 2.5 Load = 77 H, TJ = 150 C Note: IEC 60747-8-4 Definitions Fig. 22 IF = 300 A, TJ = 150 C, VGS = 0 Fig. 11 C Note: The reverse recovery is purely capacitive Thermal Characteristics Symbol Parameter Min. Typ. Max. RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.070 0.075 RthJCD Thermal Resistance Juction-to-Case for Diode 0.073 0.076 Unit C/W Test Conditions Tc = 90 C, PD = 150 W Fig. 27 Tc = 90 C, PD = 130 W Fig. 28 Additional Module Data Symbol Parameter Unit 300 g Test Condtion W Weight M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 9 mm Terminal to terminal 30 mm Terminal to terminal 40 mm Terminal to baseplate Creepage Distance 2 Max. CAS300M12BM2,Rev. A Note Typical Performance 600 VGS = 10 V VGS = 16 V 300 200 100 0 1 2 3 4 5 6 7 VGS = 16 V VGS = 14 V 300 200 Conditions: TJ = 25C tp = 200 s 0 8 0 1 2 Drain-Source Voltage VDS (V) VGS = 20 V On Resistance, RDS On (p.u.) Drain-Source Current, IDS (A) 1.6 300 200 100 Conditions: TJ = 150C tp = 200 s 0 1 2 3 4 5 8 6 7 1.2 1.0 0.8 0.6 0.4 0.2 0.0 8 -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (C) Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 C 10.0 Conditions: VGS = 20 V tp = 200 s 9 8 9.0 Tj = 150 C 7 6 5 VGS = 12 V 8.0 On Resistance, RDS On (p.u.) 10 On-Resistance, RDS ON (m) 7 1.4 Drain-Source Voltage VDS (V) Tj = 25 C 4 Tj = -40 C 3 2 1 VGS = 14 V 7.0 6.0 VGS = 16 V 5.0 VGS = 18 V 4.0 VGS = 20 V 3.0 2.0 Conditions: IDS = 300 A tp = 200 s 1.0 0 0 100 200 300 400 500 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current for Various Temperatures 3 6 Conditions: IDS = 300 A VGS = 20 V tp = 200 s 1.8 VGS = 10 V VGS = 14 V 0 5 2.0 VGS = 16 V 400 4 Figure 2. Output Characteristics TJ = 25 C VGS = 12 V VGS = 18 V 500 3 Drain-Source Voltage VDS (V) Figure 1. Output Characteristics TJ = -40 C 600 VGS = 10 V 400 100 Conditions: TJ = -40C tp = 200 s 0 VGS = 12 V VGS = 18 V 500 VGS = 18 V 400 VGS = 20 V VGS = 12 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 500 600 VGS = 14 V VGS = 20 V CAS300M12BM2,Rev. A 600 0.0 -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (C) Figure 6. On-Resistance vs. Temperature for Various Gate-Source Voltage Typical Performance 3.5 Conditions: VDS = 20 V tp < 200 s 350 Drain-Source Current, IDS (A) 3.0 Threshold Voltage, VGS(th) (V) 400 Conditions VDS = V 10GSV IDS = 15 0.5mA mA 2.5 2.0 1.5 1.0 0.5 TJ = 150 C 300 250 TJ = 25 C 150 100 50 0.0 -50 -25 0 25 50 75 100 125 0 150 0 2 4 6 Junction Temperature TJ (C) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 Drain-Source Current, IDS (A) VGS = 0 V -100 -200 VGS = -2 V -300 -400 VGS = -5 V -4.0 -2.0 -1.5 -1.0 -0.5 0.0 Drain-Source Current, IDS (A) -100 -200 -300 -2.0 -1.5 -1.0 -0.5 -400 Conditions: TJ = 150C tp = 200 s Drain-Source Voltage VDS (V) Figure 11. Diode Characteristic at 150 C CAS300M12BM2,Rev. A 0.0 -200 -300 -400 VGS = -2 V VGS = 0 V -500 Conditions: TJ = 25C tp = 200 s -600 Drain-Source Voltage VDS (V) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VGS = 0 V -100 VGS = 5 V -200 VGS = 10 V VGS = 15 V -300 VGS = 20 V -400 -500 -600 0.0 0 VGS = 0 V VGS = -2 V 4 -2.5 Figure 10. Diode Characteristic at 25 C 0 VGS = -5 V 14 -100 -600 Drain-Source Current, IDS (A) -2.5 12 0 Figure 9. Diode Characteristic at -40 C -3.0 -3.0 VGS = -5 V Drain-Source Voltage VDS (V) -3.5 -3.5 -500 Conditions: TJ = -40 C tp = 200 s -4.0 10 Figure 8. Transfer Characteristic for Various Junction Temperatures Drain-Source Current, IDS (A) -3.5 8 Gate-Source Voltage, VGS (V) Figure 7. Threshold Voltage vs. Temperature -4.0 TJ = -40 C 200 Conditions: TJ = 25 -40C C tp = 200 s Drain-Source Voltage VDS (V) -500 -600 Figure 12. 3rd Quadrant Characteristic at -40 C Typical Performance -2.5 -2.0 -1.5 -1.0 -0.5 0.0 Drain-Source Current, IDS (A) 0 Conditions: TJ = 25C tp = 200 s -3.0 -2.5 -100 VGS = 5 V -200 VGS = 10 V VGS = 15 V -300 VGS = 20 V -400 -2.0 -1.5 -1.0 -0.5 0.0 0 Conditions: TJ = 150C tp = 200 s VGS = 0 V Drain-Source Current, IDS (A) -3.0 VGS = 0 V -100 VGS = 5 V -200 VGS = 10 V -300 VGS = 15 V -400 -500 -500 VGS = 20 V -600 Drain-Source Voltage VDS (V) Figure 14. 3rd Quadrant Characteristic at 150 C Figure 13. 3rd Quadrant Characteristic at 25 C 100 25 Conditions: TJ = 25 C IDS = 300 A VDS = 1000 V Conditions: TJ = 25 C VAC = 25 mV f = 200 kHz Ciss 10 Capacitance (nF) Source Voltage, VGS (V) Gate-Source 20 15 10 5 Coss 1 Crss 0.1 0 0.01 -5 0 200 400 600 Gate Charge (nC) 800 1000 0 1200 100 100 Drain-Source Voltage, VDS (V) 150 200 1.6 Conditions: TJ = 25 C VAC = 25 mV f = 200 kHz Ciss 50 Figure 16. Typical Capacitances vs. Drain-Source Voltage (0 - 200 V) Figure 15. Typical Gate Charge Characteristics 1.4 10 1.2 Stored Energy, EOSS (mJ) Capacitance (nF) -600 Drain-Source Voltage VDS (V) Coss 1 0.1 Crss 1 0.8 0.6 0.4 0.2 0 0.01 0 200 400 600 Drain-Source Voltage, VDS (V) 800 1000 Figure 17. Typical Capacitances vs. Drain-Source Voltage (0 - 1 kV) 5 CAS300M12BM2,Rev. A 0 200 400 600 800 1000 1200 Drain to Source Voltage, VDS (V) Figure 18. Typical Output Capacitor Stored Energy Typical Performance 20 14 12 ETotal 10 8 6 EOn 4 0 50 100 150 200 20 ETotal 15 10 EOn 5 EOff 2 0 Conditions: TJ = 25 C VDD = 800 V RG(ext) = 2.5 VGS = -5/+20 V L = 77 H 25 Switching Loss (mJ) 16 Switching Loss (mJ) 30 Conditions: TJ = 25 C VDD = 600 V RG(ext) = 2.5 VGS = -5/+20 V L = 77 H 18 250 300 350 400 EOff 0 450 0 Drain to Source Current, IDS (A) 100 150 200 250 300 350 400 Figure 20. Inductive Switching Energy vs. Drain Current For VDS = 800 V, RG = 2.5 14 Conditions: TJ = 25 C VDD = 600 V IDS =300 A VGS = -5/+20 V L = 77 H 100 80 ETotal 12 ETotal 10 Switching Loss (mJ) 120 60 EOn 40 EOff 20 8 EOff 6 EOn Conditions: VDD = 600 V RG(ext) = 2.5 IDS =300 A VGS = -5/+20 V L = 77 H 4 2 0 0 0 5 10 15 20 25 30 35 40 45 Figure 21. Inductive Switching Energy vs. RG(ext) 1200 0 25 50 75 100 125 150 Figure 22. Inductive Switching Energy vs. Temperature Conditions: TJ = 25 C VDD = 600 V IDS = 300 A VGS = -5/+20 V 1000 Time (ns) 800 td (off) 600 td (on) 400 tr 200 tf 0 0 5 10 15 20 25 30 35 40 External Gate Resistor, RG(ext) (Ohms) Figure 23. Timing vs RG(ext) CAS300M12BM2,Rev. A 175 Junction Temperature, TJ (C) External Gate Resistor RG(ext) (Ohms) 6 450 Drain to Source Current, IDS (A) Figure 19. Inductive Switching Energy vs. Drain Current For VDS = 600V, RG = 2.5 Switching Loss (mJ) 50 Figure 24. Resistive Switching Time Description Typical Performance 1800 450 Maximum Dissipated Power, Ptot (W) 1600 Drain-Source Continuous Current, IDS (DC) (A) Conditions: TJ 150 C Conditions: TJ 150 C 400 1400 350 1200 300 1000 250 800 200 600 150 400 100 200 0 -40 -20 0 20 40 60 80 100 120 140 50 0 160 -40 -20 0 20 Case Temperature, TC (C) Figure 25. Maximum Power Dissipation (MOSFET) Derating vs Case Temperature 0.5 Junction To Case Impedance, ZthJC (oC/W) Junction To Case Impedance, ZthJC (oC/W) 80 100 120 140 160 100E-3 0.3 0.1 10E-3 0.05 0.02 1E-3 SinglePulse 0.01 100E-6 0.5 10E-3 0.3 0.1 0.05 1E-3 0.02 0.01 SinglePulse 100E-6 10E-6 10E-6 1E-6 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 Figure 27. MOSFET Junction to Case Thermal Impedance 1000.00 10 s 100 s Drain-Source Current, IDS (A) 60 Figure 26. Continuous Drain Current Derating vs Case Temperature 100E-3 Limited by RDS On 1 ms 100.00 100 ms 10.00 1.00 0.10 Conditions: TC = 25 C D = 0, Parameter: tp 0.01 0.1 1 10 100 Drain-Source Voltage, VDS (V) Figure 29. Safe Operating Area 7 40 Case Temperature, TC (C) CAS300M12BM2,Rev. A 1000 1E-6 10E-6 100E-6 1E-3 Time, tp (s) 10E-3 100E-3 1 Figure 28. Diode Junction to Case Thermal Impedance Schematic Package Dimensions (mm) 8 CAS300M12BM2,Rev. A Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Copyright (c) 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 9 CAS300M12BM2 Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power