1
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CAS300M12BM2
1.2kV, 4.2 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-RecTM Diode
Datasheet: CAS300M12BM2,Rev.A
Features
• UltraLowLoss
• High-FrequencyOperation
• ZeroReverseRecoveryCurrentfromDiode
• ZeroTurn-offTailCurrentfromMOSFET
• Normally-off,Fail-safeDeviceOperation
• EaseofParalleling
• CopperBaseplateandAluminumNitrideInsulator
System Benets
• EnablesCompactandLightweightSystems
• HighEfciencyOperation
• MitigatesOver-voltageProtection
• ReducedThermalRequirements
• ReducedSystemCost
Applications
• InductionHeating
• MotorDrives
• SolarandWindInverters
• UPSandSMPS
• Traction

Package 62mm x 106mm x 30mm
 
Maximum Ratings (TC = 25˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Notes
VDSmax Drain-SourceVoltage 1.2 kV
VGSmax Gate-SourceVoltage -10/+25 V AbsoluteMaximumvalues
VGSop Gate-SourceVoltage -5/+20 V RecommendedOperationalValues
IDContinuousDrainCurrent 423 AVGS=20V,TC=25˚C Fig.26
293 VGS=20V,TC=90˚C
ID(pulse) PulsedDrainCurrent 1500 A PulsewidthtPlimitedbyTjmax
TJmax JunctionTemperature 150 ˚C
TC,TSTG CaseandStorageTemperatureRange -40to+125 ˚C
Visol CaseIsolationVoltage 5.0 kV AC,50Hz,1min
LStray StrayInductance 15 nH Measuredbetweenterminals2and3
PDPowerDissipation 1668 W TC=25˚C,TJ=150˚C Fig.25
Part Number Package Marking
CAS300M12BM2 Half-BridgeModule CAS300M12BM2
VDS 1.2 kV
Esw, Total @ 300A 12 mJ
RDS(on) 4.2 mΩ
2CAS300M12BM2,Rev. A
Electrical Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
VDSS Drain-SourceBlockingVoltage 1.2 kV VGS,=0V,ID=2mA
VGS(th) GateThresholdVoltage 1.8 2.5 V VDS=10V,ID=15mA Fig7
IDSS ZeroGateVoltageDrainCurrent 600 2000 μA VDS=1.2kV,VGS=0V
1500 VDS=1.2kV,VGS=0V,TJ=150˚C
IGSS Gate-SourceLeakageCurrent 1 100 nA VGS=20V,VDS=0V
RDS(on) OnStateResistance
4.2 5.3
mΩ
VGS=20V,IDS=300A Fig.4,
5,6
7.7 VGS=20V,IDS=300A,
TJ=150˚C
gfs Transconductance 156 SVDS=20V,IDS=300A Fig.8
144 VDS=20V,ID=300A,TJ=150˚C
Ciss InputCapacitance 19.3
nF VDS=600V,f=200kHz,
VAC=25mV
Fig.
16,17
Coss OutputCapacitance 2.57
Crss ReverseTransferCapacitance 0.12
Eon Turn-OnSwitchingEnergy
 5.8 mJ VDD=600V,VGS=-5V/+20V
ID=300A,RG(ext)=2.5Ω
Load=77μH,TJ=150˚C
Note:IEC60747-8-4Denitions
Fig.22
EOff Turn-OffSwitchingEnergy
 6.1 mJ
RG(int) InternalGateResistance 3.0 Ω f=200kHz,VAC=25mV
QGS Gate-SourceCharge 166
nC VDD=800V,VGS=-5V/+20V,
ID=300A,PerJEDEC24pg27 Fig.15
QGD Gate-DrainCharge 475
QGTotalGateCharge 1025
td(on) Turn-ondelaytime 76 ns VDD=600V,VGS=-5/+20V,
ID=300A,RG(ext)=2.5Ω,
TimingrelativetoVDS
Note:IEC60747-8-4,pg83
Inductiveload
Fig.23
trRiseTime 68 ns
td(off) Turn-offdelaytime 168 ns
tfFallTime 43 ns
VSD DiodeForwardVoltage 1.6 2.0 VIF=300A,VGS=0 Fig.10
2.0 IF=300A,TJ=150˚C,VGS=0 Fig.11
QCTotalCapacitiveCharge 3.2 μC
Note:Thereverserecoveryispurelycapacitive
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
RthJCM ThermalResistanceJuction-to-CaseforMOSFET 0.070 0.075 ˚C/W Tc=90˚C,PD=150W Fig.27
RthJCD ThermalResistanceJuction-to-CaseforDiode 0.073 0.076 Tc=90˚C,PD=130W Fig.28
Additional Module Data
Symbol Parameter Max. Unit Test Condtion
W Weight 300 g
M MountingTorque 5Nm Toheatsinkandterminals
ClearanceDistance 9mm Terminaltoterminal
CreepageDistance 30 mm Terminaltoterminal
40 mm Terminaltobaseplate
3CAS300M12BM2,Rev. A
Typical Performance
0
100
200
300
400
500
600
012345678
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= -40°C
tp= 200 µs
VGS = 20 V
VGS = 18 V
VGS = 10 V
VGS = 12 V
VGS = 14 V
VGS = 16 V
0
100
200
300
400
500
600
012345678
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
VGS = 20 V
VGS = 18 V
VGS = 10 V
VGS = 12 V
VGS = 14 V
VGS = 16 V
Figure2.OutputCharacteristicsTJ=25˚C
Figure1.OutputCharacteristicsTJ=-40˚C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 025 50 75 100 125 150
On Resistance, R
DS On
(p.u.)
Junction Temperature, T
J
(°C)
Conditions:
I
DS
= 300 A
V
GS
= 20 V
t
p
= 200 µs
0
100
200
300
400
500
600
012345678
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
TJ= 150°C
tp= 200 µs
VGS = 20 V
VGS = 18 V VGS = 10 V
VGS = 12 V
VGS = 14 V
VGS = 16 V
Figure6.
On-Resistancevs.TemperatureforVarious
Gate-SourceVoltage
Figure4.NormalizedOn-Resistancevs.Temperature
0
1
2
3
4
5
6
7
8
9
10
0100 200 300 400 500 600
On-Resistance, RDS ON (mΩ)
Drain-Source Current, IDS (A)
T
j
= -40 °C
T
j
= 25 °C
T
j
= 150 °C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
-50 -25 025 50 75 100 125 150
On Resistance, RDS On (p.u.)
Junction Temperature, TJ(°C)
Conditions:
I
DS
= 300 A
t
p
= 200 µs
V
GS
= 12 V
V
GS
= 14 V
V
GS
= 16 V
V
GS
= 18 V
V
GS
= 20 V
Figure5.On-Resistancevs.DrainCurrentfor
VariousTemperatures
Figure3.OutputCharacteristicsTJ=150˚C
4CAS300M12BM2,Rev. A
-600
-500
-400
-300
-200
-100
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage V
DS
(V)
Conditions:
TJ= -40 °C
tp= 200 µs
Conditions:
TJ= -40 °C
tp= 200 µs
VGS = -2 V
VGS = -5 V
VGS = 0 V
Typical Performance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 025 50 75 100 125 150
Threshold Voltage, V
GS(th)
(V)
Junction Temperature T
J
(°C)
Conditions
V
DS
= 10 V
I
DS
= 0.5 mA
Conditions
V
DS
= V
GS
I
DS
= 15 mA
0
50
100
150
200
250
300
350
400
0246810 12 14
Drain-Source Current, IDS (A)
Gate-Source Voltage, VGS (V)
Conditions:
V
DS
= 20 V
tp < 200 µs
T
J
= 150 °C
T
J
= -40 °C
T
J
= 25 °C
-600
-500
-400
-300
-200
-100
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
T
J
= 25°C
t
p
= 200 µs
V
GS
= -2 V
V
GS
= -5 V
V
GS
= 0 V
Figure8.TransferCharacteristicforVarious
JunctionTemperatures
Figure10.
DiodeCharacteristicat25˚C
Figure9.DiodeCharacteristicat-40˚C
-600
-500
-400
-300
-200
-100
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
T
J
= 150°C
t
p
= 200 µs
V
GS
= -2 V
V
GS
= -5 V
V
GS
= 0 V
-600
-500
-400
-300
-200
-100
0
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
VGS = 10 V
VGS = 5 V
VGS = 20 V
VGS = 15 V
VGS = 0 V
Figure12.3rdQuadrantCharacteristicat-40
˚
C
Figure7.ThresholdVoltagevs.Temperature
Figure11.
DiodeCharacteristicat150˚C
5CAS300M12BM2,Rev. A
10
15
20
25
Source Voltage, V
GS (V)
Conditions:
TJ = 25 °C
I
DS
= 300 A
V
DS
= 1000 V
-5
0
5
0 200 400 600 800 1000 1200
Gate-
Source Voltage, V
Gate Charge (nC)
Typical Performance
-600
-500
-400
-300
-200
-100
0
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
T
J
= 25°C
t
p
= 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 20 V
V
GS
= 15 V
V
GS
= 0 V
-600
-500
-400
-300
-200
-100
0
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage VDS (V)
Conditions:
T
J
= 150°C
t
p
= 200 µs
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 20 V
V
GS
= 15 V
V
GS
= 0 V
Figure14.
3rdQuadrantCharacteristicat150
˚
C
1
10
100
Capacitance (nF)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 200 kHz
0.01
0.1
0 50 100 150 200
Capacitance (nF)
Drain-Source Voltage, VDS (V)
C
rss
Figure13.
3rdQuadrantCharacteristicat25
˚
C
1
10
100
Capacitance (nF)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 200 kHz
0.01
0.1
0 200 400 600 800 1000
Capacitance (nF)
Drain-Source Voltage, V
DS
(V)
C
rss
0.6
0.8
1
1.2
1.4
1.6
Stored Energy, E
OSS
(mJ)
0
0.2
0.4
0 200 400 600 800 1000 1200
Stored Energy, E
Drain to Source Voltage, V
DS
(V)
Figure18.
TypicalOutputCapacitorStoredEnergy
Figure15.TypicalGateChargeCharacteristics Figure16.TypicalCapacitancesvs.Drain-Source
Voltage(0-200V)
Figure17.
TypicalCapacitancesvs.Drain-Source
Voltage(0-1kV)
6CAS300M12BM2,Rev. A
Typical Performance
8
10
12
14
16
18
20
Switching Loss (mJ)
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 600 V
R
G(ext)
= 2.5 Ω
V
GS
= -5/+20 V
L = 77 μH
0
2
4
6
0 50 100 150 200 250 300 350 400 450
Switching Loss (mJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
Figure19.InductiveSwitchingEnergyvs.
DrainCurrentForVDS=600V,RG=2.5Ω
Figure20.InductiveSwitchingEnergyvs.
DrainCurrentForVDS=800V,RG=2.5Ω
40
60
80
100
120
Switching Loss (mJ)
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 600 V
I
DS
=300 A
V
GS
= -5/+20 V
L = 77 μH
0
20
40
0 5 10 15 20 25 30 35 40 45
Switching Loss (mJ)
External Gate Resistor RG(ext) (Ohms)
E
Off
10
15
20
25
30
Switching Loss (mJ)
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 800 V
R
G(ext)
= 2.5 Ω
V
GS
= -5/+20 V
L = 77 μH
0
5
10
0 50 100 150 200 250 300 350 400 450
Switching Loss (mJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
6
8
10
12
14
Switching Loss (mJ)
E
Off
E
On
E
Total
Conditions:
0
2
4
0 25 50 75 100 125 150 175
Switching Loss (mJ)
Junction Temperature, T
J
(°C)
Conditions:
V
DD
= 600 V
R
G(ext)
= 2.5 Ω
I
DS
=300 A
V
GS
= -5/+20 V
L = 77 μH
Figure22.InductiveSwitchingEnergyvs.TemperatureFigure21.InductiveSwitchingEnergyvs.RG(ext)
400
600
800
1000
1200
Time (ns)
Conditions:
T
J
= 25 °C
V
DD
= 600 V
I
DS
= 300 A
V
GS
= -5/+20 V
td (off)
td (on)
0
200
400
0 5 10 15 20 25 30 35 40
External Gate Resistor, RG(ext) (Ohms)
tf
tr
Figure23.TimingvsRG(ext) Figure24.ResistiveSwitchingTimeDescription
7CAS300M12BM2,Rev. A
Typical Performance
Figure25.MaximumPowerDissipation(MOSFET)De-
ratingvsCaseTemperature
Figure26.ContinuousDrainCurrentDeratingvsCase
Temperature
1E-3
10E-3
100E
-
3
Junction To Case Impedance, Z
thJC
(
o
C/W)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
10E-6
100E-6
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
Time, t
p
(s)
0.01
0
50
100
150
200
250
300
350
400
450
-40 -20 020 40 60 80 100 120 140 160
Drain-Source Continuous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Conditions:
TJ≤ 150 °C
1E-3
10E-3
100E
-
3
Junction To Case Impedance, Z
thJC
(
o
C/W)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
10E-6
100E-6
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
Time, t
p
(s)
Figure27.MOSFETJunctiontoCaseThermalImpedance Figure28.DiodeJunctiontoCaseThermalImpedance
0
200
400
600
800
1000
1200
1400
1600
1800
-40 -20 020 40 60 80 100 120 140 160
Maximum Dissipated Power, P
tot
(W)
Case Temperature, T
C
(°C)
Conditions:
TJ≤ 150 °C
0.01
0.10
1.00
10.00
100.00
1000.00
0.1 110 100 1000
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
100 µs
1 ms
10 µs
Conditions:
T
C
= 25 °C
D = 0,
Parameter: t
p
Limited by R
DS On
100 ms
Figure29.SafeOperatingArea
8CAS300M12BM2,Rev. A
Schematic
Package Dimensions (mm)
99 CAS300M12BM2 Rev. A
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,airtrafccontrolsystems.
Notes