1
Features
•Low-voltage and Standard-voltage Operation
– 2.7 (VCC = 2.7 to 5.5V)
– 1.8 (VCC = 1.8 to 5.5V)
•Low-power Devices (ISB = 6 µA at 5.5V) Available
•Internally Organized 8192 x 8
•2-Wire Serial Interface
•Schmitt Trigger, Filtered Inputs for Noise Suppression
•Bi-directional Data Transfer Protocol
•400 kHz Clock Rate
•Write Protect Pin for Hardware Data Protection
•32-Byte Page Write Mode (Partial Page Writes Allowed)
•Self-Timed Write Cycle (5 ms max)
•High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
•Lead-free/Halogen-free Devices Available
•8-lead PDIP, 8-lead JEDEC SOIC and 8-lead TSSOP Packages
•Die Sales: Wafer Form, Waffle Pack, and Bumped Wafers
Description
The AT24C64B provides 65,536 bits of serial electrically erasable and programmable
read only memory (EEPROM) organized as 8192 words of 8 bits each. The device’s
cascadable feature allows up to 8 devices to share a common 2-wire bus. The device
is optimized for use in many industrial and commercial applications where low power
and low voltage operation are essential. The AT24C64B is available in space saving
8-lead PDIP, 8-lead JEDEC SOIC and 8-lead TSSOP packages and is accessed via a
2-wire serial interface. In addition, the entire family is available in 2.7V (2.7 to 5.5V)
and 1.8V (1.8 to 5.5V) versions.
2-Wire
Serial EEPROM
64K (8192 x 8)
AT24C64B
3350D–SEEPR–05/05
2-Wire, 32K
Serial E2PROM
Pin Configurations
Pin Name Function
A0 - A2 Address Inputs
SDA Serial Data
SCL Serial Clock Input
WP Write Protect
8-lead SOIC
1
2
3
4
8
7
6
5
A0
A1
A2
GND
VCC
WP
SCL
SDA
8-lead PDIP
1
2
3
4
8
7
6
5
A0
A1
A2
GND
VCC
WP
SCL
SDA
8-lead TSSOP
1
2
3
4
8
7
6
5
A0
A1
A2
GND
VCC
WP
SCL
SDA
2
AT24C64B
3350D–SEEPR–05/05
Block Diagram
Absolute Maximum Ratings*
Operating Temperature...................................... -55 to +125°C*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Storage Temperature ......................................... -65 to +150°C
Voltage on Any Pin
with Respect to Ground ....................................... -1.0 to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
3
AT24C64B
3350D–SEEPR–05/05
Pin Description SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each
EEPROM device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is
open-drain driven and may be wire-ORed with any number of other open-drain or open
collector devices.
DEVICE/ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device address inputs
that are hard wired or left not connected for hardware compatibility with other AT24CXX
devices. When the pins are hardwired, as many as eight 64K devices may be addressed
on a single bus system (device addressing is discussed in detail under the Device
Addressing section). If the pins are left floating, the A2, A1 and A0 pins will be internally
pulled down to GND if the capacitive coupling to the circuit board VCC plane is <3pF.
If coupling is >3pF, Atmel recommends connecting the address pins to GND.
WRITE PROTECT (WP): The write protect input, when connected to GND, allows nor-
mal write operations. When WP is connected high to VCC, all write operations to the
upper quandrant (16K bits) of memory are inhibited. If the pin is left floating, the WP pin
will be internally pulled down to GND if the capacitive coupling to the circuit board VCC
plane is <3pF. If coupling is >3pF, Atmel recommends connecting the pin to GND.
Memory Organization AT24C64B, 64K SERIAL EEPROM: The 64K is internally organized as 256 pages of
32 bytes each. Random word addressing requires a 13 bit data word address.
4
AT24C64B
3350D–SEEPR–05/05
Note: 1. This parameter is characterized and is not 100% tested.
Note: 1. VIL min and VIH max are reference only and are not tested.
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V
Symbol Test Condition Max Units Conditions
CI/O Input/Output Capacitance (SDA) 8 pF VI/O = 0V
CIN Input Capacitance (A0, A1, A2, SCL) 6 pF VIN = 0V
DC Characteristics
Applicable over recommended operating range from: TAI = -40 to +85°C, VCC = +1.8 to +5.5V (unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Units
VCC1 Supply Voltage 1.8 5.5 V
VCC2 Supply Voltage 2.7 5.5 V
VCC3 Supply Voltage 4.5 5.5 V
ICC1 Supply Current VCC = 5.0V READ at 400 kHz 0.4 1.0 mA
ICC2 Supply Current VCC = 5.0V WRITE at 400 kHz 2.0 3.0 mA
ISB1
Standby Current
(1.8V option) VCC = 1.8V VIN = VCC or VSS 1.0 µA
ISB2
Standby Current
(2.7V option) VCC = 2.7V VIN = VCC or VSS 2.0 µA
ISB3
Standby Current
(5V option) VCC = 4.5 - 5.5V VIN = VCC or VSS 6.0 µA
ILI
Input Leakage
Current VIN = VCC or VSS 0.10 3.0 µA
ILO
Output Leakage
Current VOUT = VCC or VSS 0.05 3.0 µA
VIL Input Low Level(1) -0.6 VCC x 0.3 V
VIH Input High Level(1) VCC x 0.7 VCC + 0.5 V
VOL2 Output Low Level VCC = 3.0V IOL = 2.1 mA 0.4 V
VOL1 Output Low Level VCC = 1.8V IOL = 0.15 mA 0.2 V
5
AT24C64B
3350D–SEEPR–05/05
Notes: 1. This parameter is characterized and is not 100% tested (TA = 25°C)
2. This parameter is characterized and is not 100% tested.
AC Characteristics
Applicable over recommended operating range from TAI = -40°C to +85°C, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and
100 pF (unless otherwise noted)
Symbol Parameter
AT24C64B
Units
1.8V – 3.6V 5.0V
Min Max Min Max
fSCL Clock Frequency, SCL 400 400 kHz
tLOW Clock Pulse Width Low 1.3 1.2 µs
tHIGH Clock Pulse Width High 0.6 0.6 µs
tINoise Suppression Time(1) 100 50 ns
tAA Clock Low to Data Out Valid 0.2 0.9 0.1 0.9 µs
tBUF Time the bus must be free before a new transmission can start(2) 1.3 1.2 µs
tHD.STA Start Hold Time 0.6 0.6 µs
tSU.STA Start Set-up Time 0.6 0.6 µs
tHD.DAT Data In Hold Time 0 0 µs
tSU.DAT Data In Set-up Time 100 100 ns
tRInputs Rise Time(2) 0.3 0.3 µs
tFInputs Fall Time(2) 300 300 ns
tSU.STO Stop Set-up Time 0.6 0.6 µs
tDH Data Out Hold Time 200 50 ns
tWR Write Cycle Time 5 5 ms
Endurance(1) 5.0V, 25°C, Page Mode 1M 1M Write
Cycles
6
AT24C64B
3350D–SEEPR–05/05
Device Operation CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an exter-
nal device. Data on the SDA pin may change only during SCL low time periods (refer to
Data Validity timing diagram). Data changes during SCL high periods will indicate a start
or stop condition as defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition
which must precede any other command (refer to Start and Stop Definition timing
diagram).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition.
After a read sequence, the stop command will place the EEPROM in a standby power
mode (refer to Start and Stop Definition timing diagram).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a zero during the ninth clock cycle to
acknowledge that it has received each word.
STANDBY MODE: The AT24C64B features a low power standby mode which is
enabled: a) upon power-up and b) after the receipt of the Stop bit and the completion of
any internal operations.
MEMORY RESET: After an interruption in protocol, power loss or system reset, any 2-
wire part can be reset by following these steps:
(a) Clock up to 9 cycles, (b) look for SDA high in each cycle while SCL is high and then
(c) create a start condition as SDA is high.
7
AT24C64B
3350D–SEEPR–05/05
Bus Timing
SCL: Serial Clock, SDA: Serial Data I/O
Write Cycle Timing
SCL: Serial Clock, SDA: Serial Data I/O
Note: 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
twr
(1)
STOP
CONDITION
START
CONDITION
WORDn
ACK
8th BIT
SCL
SDA
8
AT24C64B
3350D–SEEPR–05/05
Data Validity
Start and Stop Definition
Output Acknowledge
9
AT24C64B
3350D–SEEPR–05/05
Device
Addressing
The 64K EEPROM requires an 8-bit device address word following a start condition to enable
the chip for a read or write operation (see Figure 1 on page 11). The device address word con-
sists of a mandatory one, zero sequence for the first four most significant bits as shown. This
is common to all 2-wire EEPROM devices.
The 64K uses the three device address bits A2, A1, A0 to allow as many as eight devices on
the same bus. These bits must compare to their corresponding hardwired input pins. The A2,
A1, and A0 pins use an internal proprietary circuit that biases them to a logic low condition if
the pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read operation is
initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not
made, the device will return to standby state.
NOISE PROTECTION: Special internal circuitry placed on the SDA and SCL pins prevent
small noise spikes from activating the device. A low-VCC detector (5-volt option) resets the
device to prevent data corruption in a noisy environment.
DATA SECURITY: The AT24C64B has a hardware data protection scheme that allows the
user to write protect the upper quadrant (16K bits) of memory when the WP pin is at VCC.
Write
Operations
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit
data word, the EEPROM will output a zero and the addressing device, such as a microcontrol-
ler, must terminate the write sequence with a stop condition. At this time the EEPROM enters
an internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during
this write cycle and the EEPROM will not respond until the write is complete (see Figure 2 on
page 11).
PAGE WRITE: The 64K EEPROM is capable of 32-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to 31 more data words. The
EEPROM will respond with a zero after each data word received. The microcontroller must ter-
minate the page write sequence with a stop condition (see Figure 3 on page 11).
The data word address lower 5 bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the
following byte is placed at the beginning of the same page. If more than 32 data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond
with a zero, allowing the read or write sequence to continue.
10
AT24C64B
3350D–SEEPR–05/05
Read Operations Read operations are initiated the same way as write operations with the exception that
the read/write select bit in the device address word is set to one. There are three read
operations: current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the
last address accessed during the last read or write operation, incremented by one. This
address stays valid between operations as long as the chip power is maintained. The
address “roll over” during read is from the last byte of the last memory page, to the first
byte of the first page. The address “roll over” during write is from the last byte of the cur-
rent page to the first byte of the same page.
Once the device address with the read/write select bit set to one is clocked in and
acknowledged by the EEPROM, the current address data word is serially clocked out.
The microcontroller does not respond with an input zero but does generate a following
stop condition (see Figure 4 on page 12).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the
data word address. Once the device address word and data word address are clocked
in and acknowledged by the EEPROM, the microcontroller must generate another start
condition. The microcontroller now initiates a current address read by sending a device
address with the read/write select bit high. The EEPROM acknowledges the device
address and serially clocks out the data word. The microcontroller does not respond
with a zero but does generate a following stop condition (see Figure 5 on page 12).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or
a random address read. After the microcontroller receives a data word, it responds with
an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to
increment the data word address and serially clock out sequential data words. When the
memory address limit is reached, the data word address will “roll over” and the sequen-
tial read will continue. The sequential read operation is terminated when the
microcontroller does not respond with a zero but does generate a following stop condi-
tion (see Figure 6 on page 12).
11
AT24C64B
3350D–SEEPR–05/05
Figure 1. Device Address
Figure 2. Byte Write
Figure 3. Page Write
Note: 1. * = DON’T CARE bits
12
AT24C64B
3350D–SEEPR–05/05
Figure 4. Current Address Read
Figure 5. Random Read
Note: 1. * = DON’T CARE bits
Figure 6. Sequential Read
13
AT24C64B
3350D–SEEPR–05/05
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables.
2. “U” designates Green Package & RoHS compliant.
3. Available in waffle pack and wafer form; order as SL719 for wafer form. Bumped die available upon request. Please contact
Serial EEPROM Marketing.
AT24C64B Ordering Information(1)
Ordering Code Package Operation Range
AT24C64B-10PI-2.7
AT24C64BN-10SI-2.7
AT24C64B-10TI-2.7
8P3
8S1
8A2
Industrial Temperature
(-40°C to 85°C)
AT24C64B-10PI-1.8
AT24C64BN-10SI-1.8
AT24C64B-10TI-1.8
8P3
8S1
8A2
Industrial Temperature
(-40°C to 85°C)
AT24C64B-10PU-2.7(2)
AT24C64B-10PU-1.8(2)
AT24C64BN-10SU-2.7(2)
AT24C64BN-10SU-1.8(2)
AT24C64B-10TU-2.7(2)
AT24C64B-10TU-1.8(2)
8P3
8P3
8S1
8S1
8A2
8A2
Lead-free/Halogen-free
Industrial Temperature
(-40°C to 85°C)
AT24C64B-W2.7-11(3)
AT24C64B-W1.8-11(3)
Die Sale
Die Sale
Industrial Temperature
(-40°C to 85°C)
Package Type
8P3 8-lead, 0.300” Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150” Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2 8-lead, 4.4 mm Body, Plastic, Thin Shrink Small Outline Package (TSSOP)
Options
-2.7 Low Voltage (2.7V to 5.5V)
-1.8 Low Voltage (1.8V to 5.5V)
14
AT24C64B
3350D–SEEPR–05/05
Packaging Information
8P3 – PDIP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
01/09/02
8P3 B
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
COMMON DIMENSIONS
(Unit of Measure = inches)
SYMBOL MIN NOM MAX NOTE
D
D1
E
E1
e
L
b2
b
A2 A
1
N
eA
c
b3
4 PLCS
A 0.210 2
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
D1 0.005 3
E 0.300 0.310 0.325 4
E1 0.240 0.250 0.280 3
e 0.100 BSC
eA 0.300 BSC 4
L 0.115 0.130 0.150 2
Top View
Side View
End View
15
AT24C64B
3350D–SEEPR–05/05
8S1 – JEDEC SOIC
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE DRAWING NO.
R
REV.
Note:
3/17/05
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC) 8S1 C
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 – 0.25
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
A 1.35 – 1.75
b 0.31 – 0.51
C 0.17 – 0.25
D 4.80 – 5.05
E1 3.81 – 3.99
E 5.79 – 6.20
e 1.27 BSC
L 0.40 – 1.27
θ 0˚ – 8˚
Ø
Ø
E
E
1
1
N
N
TOP VIEW
TOP VIEW
C
C
E1
E1
END VIEW
A
A
b
b
L
L
A1
A1
e
e
D
D
SIDE VIEW
SIDE VIEW
16
AT24C64B
3350D–SEEPR–05/05
8A2 – TSSOP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
5/30/02
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
D 2.90 3.00 3.10 2, 5
E 6.40 BSC
E1 4.30 4.40 4.50 3, 5
A – – 1.20
A2 0.80 1.00 1.05
b 0.19 – 0.30 4
e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
8A2 B
Side View
End View
Top View
A2
A
L
L1
D
123
E1
N
b
Pin 1 indicator
this corner
E
e
Printed on recycled paper.
3350D–SEEPR–05/05
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