IRFR310/311 N-CHANNEL IRFU310/311 POWER MOSFETS FEATURES + Lower Ros(on) + Improved inductive ruggedness + Fast switching times + Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area * Improved high temperature reliability D-PAK 1.Gate 2.Drain 3.Source IRFR310/311 1-PAK PRODUCT SUMMARY Part Number Vos Rpsjon) Ip IRFR310/U310 400V 3.60 1.74 1 IRFR311/U311 350V 3.62 1.74 1.Gate 2.Drain 3.Source IRFU310/311 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRFR310/U310 IRFR311/U311 Unit Drain-Source Voltage (1) Vpss 400 350 Vde Drain-Gate Voltage (Ras=1.0M 0) VpeR 400 350 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25 C Io 1.7 Adc Continuous Drain Current Tc=100 C lo 1.2 Adc Drain Current - Pulsed (3) IDM 6.8 Adc Single Pulsed Avalanche Energy (4) Eas 120 mJ Avalanche Current las 1.7 A Total Power Dissipation at Tc=25 C Pp 25 Watts Derate above 25 C 0.2 w/C Operating and Storage Tu, Tstg -55 to +150 C Junction Temperature Range Maximum Lead Temp. for Soldering . Purposes, 1/8" from case for 5 seconds nh 300 c Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature (4) L=53mH, Vad=50V, Ra=25 2, Starting T==25C Mm 79b414e OOedebl 390 ELECTRONICS IRFR310/311 N-CHANNEL IRFU310/311 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) [ Symbol Characteristic Min | Typ | Max | Units Test Conditions Drain-Source Breakdown Voltage " IRFR310/U310 400; - - V_ | Vas=0V, ID=250A (RFR311/U311 350] - - V Vasth Gate Threshold Voltage 2.0 - 4.0 Vos=Ves, Ip=2502A Iess_ | Gate-Source Leakage Forward - - 100 | nA | Vas=20V less | Gate-Source Leakage Reverse - - | -100} nA | Vas=-20V Ipss_| Zero Gate Voltage Drain Current - - 250 | #A | Vos=Max. Rating, Ves=0V 1000 | A | Vos=0.8 Max. Rating, Vas=0V, Tc=125C Ros(on) | Static Drain-Source On Resistance(2) - - 3.6 Q | Vas=10V, lo=0.9A Ofs Forward Transconductance (2) 0.5 | 1.0 - U_ | Vos=50V, Ip=0.9A | Ciss_ | Input Capacitance - | 180 - pF Coss | Output Capacitance - 40 - pF | Vas=O0V, Vos=25V, f=1.0MHz Crss Reverse Transfer Capacitance - 14 - pF tdion) | Turn-On Delay Time - 79} 12 ns j Voo=0.5 BVpss, Ip=1.7A, Zo=24.2 tr Rise Time - 9.9] 15 ns | (MOSFET switching times are essentially tao) | Turn-Off Delay Time - 21 32 ns | independent of operating temperature) tt Fall Time - 11 17 | ns Qg Total Gate Charge - - 14 | nC | Ves=10V, lo=1.7A, Vos=0.8 Max. Rating Qgs 7 Gate-Source Charge - 2.0 - nC | (Gate charge is essentially independent of Qga | Gate-Drain ("Miller") Charge - 5.8 - nC | operating temperature) THERMAL RESISTANCE Symbol Characteristics Alt Units Remark Rthuc | Junction-to-Case MAX 5.0 KAW Pincs | Case-to-Sink TYP 17 K/W | Mounting surface flat, smooth and greased Rtnva Junction-to-Ambient MAX 110 KW | Free Air Operation Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width <300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature a ELECTRONICS 348 ME 7964142 OOe8ebe ec? IRFR310/311 IRFU310/311 N-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max | Units Test Conditions Continuous Source Current Is j - - 1.7 A | Modified MOSFET (Body Diode} symbol showing the () Pulse Source Current integral reverse coy ism . - - 6.8 | A | P-N junction rectifier (Body Diode} (3) Vsp. Diode Forward Voltage (2) - - 1.6 V | Tu=25C, Is=1.7A, Vas / tr Reverse Recovery Time - 240) 520} ns | Ty=25C, IF=1.7A, dlF/dt=100A/uS Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width < 3004s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature 80ys Pulse Test Ip, DRAIN CURRENT (AMPERES) O44 0 100 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics = @ w % ny Ip, DRAIN CURRENT (AMPERES) rs & 0 2 4 6 8 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics 120 10 lp, ORAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES) Tye125 T)=26C 86C oO 2 4 6 8 10 12 14 Ves, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics IN AREA IS UMITED BY Te=25C T\= 150C MAX SINGLE PULSE 001 10. 2 5 10 20 50 100 200 500 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area en ELECTRONICS 349 ME 7964142 0024263 1b3 IRFR310/311 N-CHANNEL IRFU310/311 POWER MOSFETS THERMAL at 1. Duty Factor. O= 1. t a 2. Per Unit Base=Ay.=6 4 Deg. CW 3. Tow Te=Pou Zine (H). ZinsctWRinsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT} 107 1 2 5 2 5 107 5 1 1 10 11. SQUARE WAVE PULSE DURATION (SECONDS) ; Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration 10? 2.4 Pulse Test 0 a 0.6 gts, TRANSCONDUCTANCE (SIEMENS) lpg, REVERSE DRAIN CURRENT (AMPERES) lb, DRAIN CURRENT (AMPERES) Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transconductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage a (NORMALIZED) 0.5 BVpss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE Rosion), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) a 40 120 80 1 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Ne lized On-Resist: Vs. Temp e 350 ELECTRONICS Me 7964142 0028264 OTT IRFR310/311 IRFU310/311 N-CHANNEL POWER MOSFETS Ves=0 f=1MHz Ciss=Cgs+Cgd, Cds SHORTED Crss=Cgd Coss=Cds+ Cgs+Cgd =Cds+Cqd C, CAPACITANCE (pF) 4 10 20 30 40 50 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage Vas= 10 Rosen) MEASURED CURRENT PULSE OF 2.0ys DURATION. INITIAL T,=25C {HEATING EFFECT OF 2 PULSE IS MINIMAL} Rosjon), ORAIN-TO-SOURCE ON RESISTANCE (OHMS) o 1 2 3 4 5 7 8 9 10 Ip, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) 20 40 60 80 100 0 6-120140 160 Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) ip, DRAIN CURRENT (AMPERES) 20 12 Vos=80V Vos= 200V Vps= 320 0 3 6 9 12 15 Qg, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage 08 0 25 50 75 100 1 150 Ta, AMBIENT TEMPERATURE (C) Maximum Orain Current Vs. Case Temperature ELECTRONICS 351 Me 7964142 OOe2s8ebS Tab