2SA1774EB Transistors General Purpose Transistor (-50V, -0.15A) 2SA1774EB zApplications General purpose small signal amplifier zDimensions (Unit : mm) EMT3F zFeatures 1) Excellent hFE linearity. 2) Complements the 2SC4617EB. 1.6 0.7 0.37 zStructure PNP silicon epitaxial planar transistor 0.45 (3) (1) 0.5 0.5 1.0 0.45 1.6 0.86 0.37 0.26 (2) 0.13 Each lead has same dimensions (1) Base (2) Emitter (3) Collector Abbreviated symbol : F zAbsolute maximum (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current -150 IC mA ICP 1 -200 Power dissipation PD 2 150 mW Junction temperature Tj 150 C Tstg -55 to +150 C Range of storage temperature 1 Pw=1ms Single pulse 2 Each terminal mounted on a recommended land 1/3 2SA1774EB Transistors zElectrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO -50 - - V IC=-1mA Collector-base breakdown voltage BVCBO -60 - - V IC=-50A Emitter-base breakdown voltage BVEBO -6 - - V IE=-50A ICBO - - -100 nA VCB=-60V Collector cutoff current Conditions IEBO - - -100 nA VEB=-6V VCE(sat) - - -0.5 V IC/IB=-50mA/-5mA hFE 82 - 560 - VCE=-6V, IC=-1mA Transition frequency fT - 140 - MHz Output capacitance Cob - 4.0 5.0 pF Emitter cutoff current Collector-emitter saturation voltage DC current gain VCE=-12V, IE=2mA, f=100MHz VCE=-12V, IE=0A, f=1MHz hFE rank categories Rank P Q R S hFE 82 to 180 120 to 270 180 to 390 270 to 560 zElectrical characterristic curves -5 -2 -1 -0.5 -0.2 -0.1 -24.5 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5A 0 -0.4 -0.8 -1.2 -1.6 IB=0 -2.0 500 Ta=100C DC CURRENT GAIN : hFE 25C 100 50 -40C 200 100 50 -80 -60 Ta=25C -500 -450 -400 -350 -300 -250 -200 -150 -40 -100 -20 -50A IB=0 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics (I) VCE= -5V -3V -1V 200 -100 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -21.0 -6 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Ta=25C -28.0 -8 BASE TO EMITTER VOLTAGE : VBE (V) 500 -31.5 COLLECTOR CURRENT : IC (mA) -10 -35.0 Ta=25C Fig.3 Grounded emitter output characteristics (II) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -20 -10 VCE= -6V Ta=100C 25C -40C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 -1 Ta=25C -0.5 -0.2 IC/IB=50 -0.1 20 10 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) -0.2 -0.5 -1 -2 VCE= -6V -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current (I) 2/3 2SA1774EB 1000 -0.5 -0.2 -0.1 Ta=25C VCE= -12V lC/lB=10 Ta=100C 25C -40C -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) 500 200 100 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -1 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 20 Ta=25C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0