RC28F00BM29EWHA - MICRON TECHNOLOGY

Parallel NOR Flash Embedded Memory

JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx

JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx

JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx

PC28F00BM29EWxx, RC28F00BM29EWxx

Features

• 2Gb = stacked device (two 1Gb die)

• Supply voltage

– VCC = 2.7–3.6V (program, erase, read)

– VCCQ = 1.65–3.6V (I/O buffers)

• Asynchronous random/page read

– Page size: 16 words or 32 bytes

– Page access: 25ns

– Random access: 100ns (Fortified BGA);

110ns (TSOP)

• Buffer program: 512-word program buffer

• Program time

– 0.88µs per byte (1.14 MB/s) TYP when using full

512-word buffer size in buffer program

• Memory organization

– Uniform blocks: 128-Kbytes or 64-Kwords each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• BLANK CHECK operation to verify an erased block

• Unlock bypass, block erase, chip erase, and write to

buffer capability

– Fast buffered/batch programming

– Fast block/chip erase

• VPP/WP# pin protection

– Protects first or last block regardless of block

protection settings

• Software protection

– Volatile protection

– Nonvolatile protection

– Password protection

– Password access

• Extended memory block

– 128-word (256-byte) block for permanent, secure

identification

– Programmed or locked at the factory or by the

customer

• Low power consumption: Standby mode

• JESD47H-compliant

– 100,000 minimum ERASE cycles per block

– Data retention: 20 years (TYP)

• 65nm multilevel cell (MLC) process technology

• Fortified BGA and TSOP packages

• Green packages available

– RoHS-compliant

– Halogen-free

• Operating temperature

– Ambient: –40°C to +85°C

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

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Products and specifications discussed herein are subject to change by Micron without notice.

Part Numbering Information

Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory

content bits erased to 1. For available options, such as packages or high/low protection, or for further information,

contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specifica-

tion comparison by device type is available at www.micron.com/products. Contact the factory for devices not

found.

Table 1: Part Number Information

Part Number

Category Category Details Notes

Package JS = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant

PC = 64-ball Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant

RC = 64-ball Fortified BGA, 11mm x 13mm, leaded

Product designator 28F = NOR parallel interface

Density 256 = 256Mb

512 = 512Mb

00A = 1Gb

00B = 2Gb

Device type M29EW = Embedded Flash memory (3V core, page, uniform block)

Device function H = Highest block protected by VPP/WP# 1

L = Lowest block protected by VPP/WP#

Features A/B/D/E or an asterisk (*) = Combination of features, including packing media, special

features, and specific customer request information

Note: 1. For 2Gb device, H also indicates protection of the lowest block by VPP/WP#.

Table 2: Standard Part Numbers by Density, Medium, and Package

Density Medium

Package

JS PC RC

256Mb Tray JS28F256M29EWHA PC28F256M29EWHA RC28F256M29EWHA

JS28F256M29EWLA PC28F256M29EWLA RC28F256M29EWLA

Tape and Reel JS28F256M29EWHB PC28F256M29EWHB RC28F256M29EWHB

JS28F256M29EWLB PC28F256M29EWLB –

512Mb Tray JS28F512M29EWHA PC28F512M29EWHD RC28F512M29EWHA

JS28F512M29EWLA PC28F512M29EWLA RC28F512M29EWLA

Tape and Reel JS28F512M29EWHB PC28F512M29EWHB RC28F512M29EWHB

JS28F512M29EWLB PC28F512M29EWLB –

1Gb Tray JS28F00AM29EWHA PC28F00AM29EWHA RC28F00AM29EWHA

JS28F00AM29EWLA PC28F00AM29EWLA RC28F00AM29EWLA

Tape and Reel JS28F00AM29EWHB PC28F00AM29EWHB RC28F00AM29EWHB

2Gb Tray – PC28F00BM29EWHA RC28F00BM29EWHA

Note: 1. For security features and part numbers, contact your local Micron sales representative.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

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Table 3: Part Numbers with Security Features by Density, Medium, and Package

Density Medium

Package

JS PC RC

256Mb Tray – PC28F256M29EWHD –

– PC28F256M29EWLD –

Tape and Reel – – –

512Mb Tray – PC28F512M29EWHA –

– PC28F512M29EWLE –

Tape and Reel – PC28F512M29EWHE –

1Gb Tray – PC28F00AM29EWHD –

PC28F00AM29EWLE

Tape and Reel – – –

Note: 1. This data sheet covers only standard parts. For security parts, contact your local Micron sales representative.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

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Contents

General Description ......................................................................................................................................... 8

Device Configurability .................................................................................................................................. 9

Signal Assignments ......................................................................................................................................... 10

Signal Descriptions ......................................................................................................................................... 12

Memory Organization .................................................................................................................................... 13

Memory Configuration ............................................................................................................................... 13

Memory Map – 256Mb–2Gb Density ........................................................................................................... 13

Bus Operations ............................................................................................................................................... 14

Read .......................................................................................................................................................... 14

Write .......................................................................................................................................................... 14

Standby ..................................................................................................................................................... 14

Output Disable ........................................................................................................................................... 15

Reset .......................................................................................................................................................... 15

Registers ........................................................................................................................................................ 16

Status Register ............................................................................................................................................ 16

Lock Register .............................................................................................................................................. 21

Standard Command Definitions – Address-Data Cycles .................................................................................... 24

READ and AUTO SELECT Operations .............................................................................................................. 26

READ/RESET Command ............................................................................................................................ 26

READ CFI Command .................................................................................................................................. 26

AUTO SELECT Command ........................................................................................................................... 26

Bypass Operations .......................................................................................................................................... 28

UNLOCK BYPASS Command ...................................................................................................................... 28

UNLOCK BYPASS RESET Command ............................................................................................................ 28

Program Operations ....................................................................................................................................... 29

PROGRAM Command ................................................................................................................................ 29

UNLOCK BYPASS PROGRAM Command ..................................................................................................... 29

WRITE TO BUFFER PROGRAM Command .................................................................................................. 29

UNLOCK BYPASS WRITE TO BUFFER PROGRAM Command ....................................................................... 31

WRITE TO BUFFER PROGRAM CONFIRM Command .................................................................................. 32

BUFFERED PROGRAM ABORT AND RESET Command ................................................................................ 32

PROGRAM SUSPEND Command ................................................................................................................ 32

PROGRAM RESUME Command .................................................................................................................. 33

Erase Operations ............................................................................................................................................ 33

CHIP ERASE Command .............................................................................................................................. 33

UNLOCK BYPASS CHIP ERASE Command ................................................................................................... 33

BLOCK ERASE Command ........................................................................................................................... 34

UNLOCK BYPASS BLOCK ERASE Command ................................................................................................ 34

ERASE SUSPEND Command ....................................................................................................................... 35

ERASE RESUME Command ........................................................................................................................ 35

BLANK CHECK Operation .............................................................................................................................. 35

BLANK CHECK Commands ........................................................................................................................ 35

Block Protection Command Definitions – Address-Data Cycles ........................................................................ 37

Protection Operations .................................................................................................................................... 40

LOCK REGISTER Commands ...................................................................................................................... 40

PASSWORD PROTECTION Commands ....................................................................................................... 40

NONVOLATILE PROTECTION Commands .................................................................................................. 40

NONVOLATILE PROTECTION BIT LOCK BIT Commands ............................................................................ 43

VOLATILE PROTECTION Commands .......................................................................................................... 43

EXTENDED MEMORY BLOCK Commands .................................................................................................. 43

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

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EXIT PROTECTION Command .................................................................................................................... 44

Device Protection ........................................................................................................................................... 45

Hardware Protection .................................................................................................................................. 45

Software Protection .................................................................................................................................... 45

Volatile Protection Mode ............................................................................................................................. 46

Nonvolatile Protection Mode ...................................................................................................................... 46

Password Protection Mode .......................................................................................................................... 47

Password Access ......................................................................................................................................... 47

Common Flash Interface ................................................................................................................................ 49

Power-Up and Reset Characteristics ................................................................................................................ 53

Absolute Ratings and Operating Conditions ..................................................................................................... 55

DC Characteristics .......................................................................................................................................... 57

Read AC Characteristics .................................................................................................................................. 59

Write AC Characteristics ................................................................................................................................. 62

Accelerated Program, Data Polling/Toggle AC Characteristics ........................................................................... 69

Program/Erase Characteristics ........................................................................................................................ 71

Package Dimensions ....................................................................................................................................... 72

Additional Resources ...................................................................................................................................... 74

Revision History ............................................................................................................................................. 75

Rev. B – 08/12 ............................................................................................................................................. 75

Rev. A – 04/12 ............................................................................................................................................. 75

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

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List of Figures

Figure 1: Logic Diagram ................................................................................................................................... 8

Figure 2: 2Gb Configuration ............................................................................................................................ 9

Figure 3: 56-Pin TSOP (Top View) .................................................................................................................. 10

Figure 4: 64-Ball Fortified BGA ....................................................................................................................... 11

Figure 5: Data Polling Flowchart .................................................................................................................... 18

Figure 6: Toggle Bit Flowchart ........................................................................................................................ 19

Figure 7: Status Register Polling Flowchart ..................................................................................................... 20

Figure 8: Lock Register Program Flowchart ..................................................................................................... 22

Figure 9: Boundary Condition of Program Buffer Size ..................................................................................... 30

Figure 10: WRITE TO BUFFER PROGRAM Flowchart ...................................................................................... 31

Figure 11: Program/Erase Nonvolatile Protection Bit Algorithm ...................................................................... 42

Figure 12: Software Protection Scheme .......................................................................................................... 47

Figure 13: Power-Up Timing .......................................................................................................................... 53

Figure 14: Reset AC Timing – No PROGRAM/ERASE Operation in Progress ...................................................... 54

Figure 15: Reset AC Timing During PROGRAM/ERASE Operation .................................................................... 54

Figure 16: AC Measurement Load Circuit ....................................................................................................... 56

Figure 17: AC Measurement I/O Waveform ..................................................................................................... 56

Figure 18: Random Read AC Timing (8-Bit Mode) ........................................................................................... 60

Figure 19: Random Read AC Timing (16-Bit Mode) ......................................................................................... 60

Figure 20: BYTE# Transition Read AC Timing .................................................................................................. 61

Figure 21: Page Read AC Timing (16-Bit Mode) ............................................................................................... 61

Figure 22: WE#-Controlled Program AC Timing (8-Bit Mode) .......................................................................... 63

Figure 23: WE#-Controlled Program AC Timing (16-Bit Mode) ......................................................................... 64

Figure 24: CE#-Controlled Program AC Timing (8-Bit Mode) ........................................................................... 66

Figure 25: CE#-Controlled Program AC Timing (16-Bit Mode) ......................................................................... 67

Figure 26: Chip/Block Erase AC Timing (8-Bit Mode) ...................................................................................... 68

Figure 27: Accelerated Program AC Timing ..................................................................................................... 69

Figure 28: Data Polling AC Timing .................................................................................................................. 69

Figure 29: Toggle/Alternative Toggle Bit Polling AC Timing (8-Bit Mode) .......................................................... 70

Figure 30: 56-Pin TSOP – 14mm x 20mm ........................................................................................................ 72

Figure 31: 64-Ball Fortified BGA – 11mm x 13mm ........................................................................................... 73

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

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List of Tables

Table 1: Part Number Information ................................................................................................................... 2

Table 2: Standard Part Numbers by Density, Medium, and Package ................................................................... 2

Table 3: Part Numbers with Security Features by Density, Medium, and Package ................................................ 3

Table 4: Signal Descriptions ........................................................................................................................... 12

Table 5: Blocks[2047:0] .................................................................................................................................. 13

Table 6: Bus Operations ................................................................................................................................. 14

Table 7: Status Register Bit Definitions ........................................................................................................... 16

Table 8: Operations and Corresponding Bit Settings ........................................................................................ 17

Table 9: Lock Register Bit Definitions ............................................................................................................. 21

Table 10: Block Protection Status ................................................................................................................... 21

Table 11: Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit ........................................... 24

Table 12: Read Electronic Signature ............................................................................................................... 27

Table 13: Block Protection ............................................................................................................................. 27

Table 14: Block Protection Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit ................................ 37

Table 15: Extended Memory Block Address and Data ...................................................................................... 43

Table 16: VPP/WP# Functions ......................................................................................................................... 45

Table 17: Query Structure Overview ............................................................................................................... 49

Table 18: CFI Query Identification String ........................................................................................................ 49

Table 19: CFI Query System Interface Information .......................................................................................... 50

Table 20: Device Geometry Definition ............................................................................................................ 50

Table 21: Primary Algorithm-Specific Extended Query Table ........................................................................... 51

Table 22: Power-Up Specifications ................................................................................................................. 53

Table 23: Reset AC Specifications ................................................................................................................... 54

Table 24: Absolute Maximum/Minimum Ratings ............................................................................................ 55

Table 25: Operating Conditions ...................................................................................................................... 55

Table 26: Input/Output Capacitance .............................................................................................................. 56

Table 27: DC Current Characteristics .............................................................................................................. 57

Table 28: DC Voltage Characteristics .............................................................................................................. 58

Table 29: Read AC Characteristics .................................................................................................................. 59

Table 30: WE#-Controlled Write AC Characteristics ......................................................................................... 62

Table 31: CE#-Controlled Write AC Characteristics ......................................................................................... 65

Table 32: Accelerated Program and Data Polling/Data Toggle AC Characteristics .............................................. 69

Table 33: Program/Erase Characteristics ........................................................................................................ 71

Table 34: Technical Notes .............................................................................................................................. 74

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

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General Description

The M29EW is an asynchronous, uniform block, parallel NOR Flash memory device

manufactured on 65nm multilevel cell (MLC) technology. READ, ERASE, and PROGRAM

operations are performed using a single low-voltage supply. Upon power-up, the device

defaults to read array mode.

The main memory array is divided into uniform blocks that can be erased independent-

ly so that valid data can be preserved while old data is purged. PROGRAM and ERASE

commands are written to the command interface of the memory. An on-chip program/

erase controller simplifies the process of programming or erasing the memory by taking

care of all special operations required to update the memory contents. The end of a

PROGRAM or ERASE operation can be detected and any error condition can be identi-

fied. The command set required to control the device is consistent with JEDEC stand-

ards.

CE#, OE#, and WE# control the bus operation of the device and enable a simple con-

nection to most microprocessors, often without additional logic.

The M29EW supports asynchronous random read and page read from all blocks of the

array. It also features an internal program buffer that improves throughput by program-

ming 512 words via one command sequence. The device contains a 128-word extended

memory block which overlaps addresses with array block 0. The user can program this

additional space and then protect it to permanently secure the contents. The device al-

so features different levels of hardware and software protection to secure blocks from

unwanted modification.

Figure 1: Logic Diagram

VCC VCCQ

A[MAX:0]

WE#

VPP/WP#

DQ[14:0]

DQ15/A-1

VSS

CE#

OE#

RST#

BYTE#

RY/BY#

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

General Description

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Device Configurability

Figure 2: 2Gb Configuration

OE#

WE#

RY/BY#

BYTE#

A[26:0]

CE#

RST#

VCC

VCCQ

VSS

DQ[14:0]

DQ15/A-1

Upper die

(1Gb)

Lower die

(1Gb)

VPP WP#/

Note: 1. A[26] = VIH selects the upper die; A[26] = VIL selects the lower die.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

General Description

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Signal Assignments

Figure 3: 56-Pin TSOP (Top View)

A23

A22

A15

A14

A13

A12

A11

A10

A19

A20

WE#

RST#

A21

VPP/WP#

RY/BY#

A18

A17

RFU

A24

A25

A16

BYTE#

VSS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

VSS

CE#

RFU

VCCQ

Notes: 1. A-1 is the least significant address bit in x8 mode.

2. A23 is valid for 256Mb and above; otherwise, it is RFU.

3. A24 is valid for 512Mb and above; otherwise, it is RFU.

4. A25 is valid for 1Gb and above; otherwise, it is RFU.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Signal Assignments

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Figure 4: 64-Ball Fortified BGA

RFU

A26

RFU

VCCQ

RFU

CE#

OE#

VSS

A17

RY/BY#

VPP/WP#

A18

A20

D10

D11

RY/BY#

VPP/WP#

A18

A20

D10

D11

WE#

RST#

A21

A19

D12

VCC

WE#

RST#

A21

A19

D12

VCC

A10

A11

D14

D13

A10

A11

D14

D13

A13

A12

A14

A15

A16

BYTE#

D15/A-1

VSS

A13

A12

A14

A15

A16

BYTE#

D15/A-1

VSS

RFU

A22

A23

VCCQ

VSS

A24

A25

RFU

A22

A23

VCCQ

VSS

A24

A25

RFU

A17

CE#

OE#

VSS

RFU

A26

RFU

VCCQ

RFU

Fortified BGA

Top view – ball side down

Fortified BGA

Bottom view – ball side up

Notes: 1. A-1 is the least significant address bit in x8 mode.

2. A23 is valid for 256Mb and above; otherwise, it is RFU.

3. A24 is valid for 512Mb and above; otherwise, it is RFU.

4. A25 is valid for 1Gb and above; otherwise, it is RFU.

5. A26 is valid for 2Gb only; otherwise it is RFU.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Signal Assignments

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Signal Descriptions

The signal description table below is a comprehensive list of signals for this device fami-

ly. All signals listed may not be supported on this device. See Signal Assignments for in-

formation specific to this device.

Table 4: Signal Descriptions

Name Type Description

A[MAX:0] Input Address: Selects the cells in the array to access during READ operations. During WRITE oper-

ations, they control the commands sent to the command interface of the program/erase con-

troller.

CE# Input Chip enable: Activates the device, enabling READ and WRITE operations to be performed.

When CE# is HIGH, the device goes to standby and data outputs are at HIGH-Z.

OE# Input Output enable: Controls the bus READ operation.

WE# Input Write enable: Controls the bus WRITE operation of the command interface.

VPP/WP# Input VPP/Write Protect: Provides WRITE PROTECT function and VPPH function. These functions

protect the lowest or highest block and enable the device to enter unlock bypass mode, re-

spectively. (Refer to Hardware Protection and Bypass Operations for details.)

BYTE# Input Byte/word organization select: Switches between x8 and x16 bus modes. When BYTE# is

LOW, the device is in x8 mode; when HIGH, the device is in x16 mode.

RST# Input Reset: Applies a hardware reset to the device, which is achieved by holding RST# LOW for at

least tPLPX. After RST# goes HIGH, the device is ready for READ and WRITE operations (after

tPHEL or tRHEL, whichever occurs last). See RESET AC Specifications for more details.

DQ[7:0] I/O Data I/O: Outputs the data stored at the selected address during a READ operation. During

WRITE operations, they represent the commands sent to the command interface of the inter-

nal state machine.

DQ[14:8] I/O Data I/O: Outputs the data stored at the selected address during a READ operation when

BYTE# is HIGH. When BYTE# is LOW, these pins are not used and are High-Z. During WRITE

operations, these bits are not used. When reading the status register, these bits should be ig-

nored.

DQ15/A-1 I/O Data I/O or address input: When the device operates in x16 bus mode, this pin behaves as

data I/O, together with DQ[14:8]. When the device operates in x8 bus mode, this pin behaves

as the least significant bit of the address.

Except where stated explicitly otherwise, DQ15 = data I/O (x16 mode); A-1 = address input (x8

mode).

RY/BY# Output Ready busy: Open-drain output that can be used to identify when the device is performing

a PROGRAM or ERASE operation. During PROGRAM or ERASE operations, RY/BY# is LOW,

and is High-Z during read mode, auto select mode, and erase suspend mode. After a hard-

ware reset, READ and WRITE operations cannot begin until RY/BY# goes High-Z (see RESET

AC Specifications for more details).

The use of an open-drain output enables the RY/BY# pins from several devices to be connec-

ted to a single pull-up resistor to VCCQ. A low value will then indicate that one (or more) of

the devices is (are) busy. A 10K Ohm or bigger resistor is recommended as pull-up resistor to

achieve 0.1V VOL.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Signal Descriptions

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Table 4: Signal Descriptions (Continued)

Name Type Description

VCC Supply Supply voltage: Provides the power supply for READ, PROGRAM, and ERASE operations.

The command interface is disabled when VCC <= VLKO. This prevents WRITE operations from

accidentally damaging the data during power-up, power-down, and power surges. If the pro-

gram/erase controller is programming or erasing during this time, then the operation aborts

and the contents being altered will be invalid.

A 0.1μF capacitor should be connected between VCC and VSS to decouple the current surges

from the power supply. The PCB track widths must be sufficient to carry the currents required

during PROGRAM and ERASE operations (see DC Characteristics).

VCCQ Supply I/O supply voltage: Provides the power supply to the I/O pins and enables all outputs to be

powered independently from VCC.

VSS Supply Ground: All VSS pins must be connected to the system ground.

RFU – Reserved for future use: RFUs should be not connected.

Memory Organization

Memory Configuration

The main memory array is divided into 128KB or 64KW uniform blocks.

Memory Map – 256Mb–2Gb Density

Table 5: Blocks[2047:0]

Block

Size

Address Range (x8) Block

Size

Address Range (x16)

Start End Start End

2047 128KB FFE 0000h FFF FFFFh 64KW 7FF 0000h 7FF FFFFh

⋮ ⋮ ⋮ ⋮ ⋮

1023 7FE 0000h 7FF FFFFh 3FF 0000h 3FF FFFFh

⋮ ⋮ ⋮ ⋮ ⋮

511 3FE 0000h 3FF FFFFh 1FF 0000h 1FF FFFFh

⋮ ⋮ ⋮ ⋮ ⋮

255 1FE 0000h 1FF FFFFh 0FF 0000h 0FF FFFFh

⋮ ⋮ ⋮ ⋮ ⋮

127 0FE 0000h 0FF FFFFh 07F 0000h 07F FFFFh

⋮ ⋮ ⋮ ⋮ ⋮

63 07E 0000h 07F FFFFh 03F 0000h 03F FFFFh

⋮ ⋮ ⋮ ⋮ ⋮

0 000 0000h 001 FFFFh 000 0000h 000 FFFFh

Note: 1. 256Mb device = blocks 0–255; 512Mb device = blocks 0–511; 1Gb device = blocks 0–1023;

2Gb device = blocks 0–2047, including upper and lower die.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Memory Organization

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Bus Operations

Table 6: Bus Operations

Notes 1 and 2 apply to entire table

Operation CE# OE# WE# RST# VPP/WP#

8-Bit Mode 16-Bit Mode

A[MAX:0],

DQ15/A-1 DQ[14:8] DQ[7:0] A[MAX:0]

DQ15/A-1,

DQ[14:0]

READ L L H H X Cell address High-Z Data output Cell address Data output

WRITE L H L H H3Command

address

High-Z Data input4Command

address

Data input4

STANDBY H X X H H X High-Z High-Z X High-Z

OUTPUT

DISABLE

L H H H X X High-Z High-Z X High-Z

RESET X X X L X X High-Z High-Z X High-Z

Notes: 1. Typical glitches of less than 3ns on CE#, WE#, and RST# are ignored by the device and do

not affect bus operations.

2. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.

3. If WP# is LOW, then the highest or the lowest block remains protected, depending on

line item.

4. Data input is required when issuing a command sequence or when performing data

polling or block protection.

Read

Bus READ operations read from the memory cells, registers, or CFI space. To accelerate

the READ operation, the memory array can be read in page mode where data is inter-

nally read and stored in a page buffer.

Page size is 16 words (32 bytes) and is addressed by address inputs A[3:0] in x16 bus

mode and A[3:0] plus DQ15/A-1 in x8 bus mode. The extended memory blocks and CFI

area do not support page read mode.

A valid bus READ operation involves setting the desired address on the address inputs,

taking CE# and OE# LOW, and holding WE# HIGH. The data I/Os will output the value.

(See AC Characteristics for details about when the output becomes valid.)

Write

Bus WRITE operations write to the command interface. A valid bus WRITE operation

begins by setting the desired address on the address inputs. The address inputs are

latched by the command interface on the falling edge of CE# or WE#, whichever occurs

last. The data I/Os are latched by the command interface on the rising edge of CE# or

WE#, whichever occurs first. OE# must remain HIGH during the entire bus WRITE oper-

ation. (See AC Characteristics for timing requirement details.)

Standby

Driving CE# HIGH in read mode causes the device to enter standby, and data I/Os to be

High-Z. To reduce the supply current to the standby supply current (ICC2), CE# must be

held within VCC ±0.3V. (See DC Characteristics.)

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Bus Operations

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During PROGRAM or ERASE operations the device will continue to use the program/

erase supply current (ICC3) until the operation completes.

Output Disable

Data I/Os are High-Z when OE# is HIGH.

Reset

During reset mode the device is deselected and the outputs are High-Z. The device is in

reset mode when RST# is LOW. The power consumption is reduced to the standby level,

independently from CE#, OE#, or WE# inputs.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Bus Operations

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Registers

Status Register

Table 7: Status Register Bit Definitions

Note 1 applies to entire table

Bit Name Settings Description Notes

DQ7 Data polling

bit

0 or 1, depending on

operations

Monitors whether the program/erase controller has successful-

ly completed its operation, or has responded to an ERASE SUS-

PEND operation.

2, 3, 4

DQ6 Toggle bit Toggles: 0 to 1; 1 to 0;

and so on

Monitors whether the program/erase controller has successful-

ly completed its operations, or has responded to an ERASE

SUSPEND operation. During a PROGRAM/ERASE operation,

DQ6 toggles from 0 to 1, 1 to 0, and so on, with each succes-

sive READ operation from any address.

3, 4, 5

DQ5 Error bit 0 = Success

1 = Failure

Identifies errors detected by the program/erase controller. DQ5

is set to 1 when a PROGRAM, BLOCK ERASE, or CHIP ERASE op-

eration fails to write the correct data to the memory, or when

a BLANK CHECK operation fails.

4, 6

DQ3 Erase timer

bit

0 = Erase not in progress

1 = Erase in progress

Identifies the start of program/erase controller operation dur-

ing a BLOCK ERASE command. Before the program/erase con-

troller starts, this bit set to 0, and additional blocks to be

erased can be written to the command interface.

DQ2 Alternative

toggle bit

Toggles: 0 to 1; 1 to 0;

and so on

Monitors the program/erase controller during ERASE opera-

tions. During CHIP ERASE, BLOCK ERASE, and ERASE SUSPEND

operations, DQ2 toggles from 0 to 1, 1 to 0, and so on, with

each successive READ operation from addresses within the

blocks being erased.

3, 4

DQ1 Buffered

program

abort bit

1 = Abort Indicates a BUFFER PROGRAM operation abort. The BUFFERED

PROGRAM ABORT and RESET command must be issued to re-

turn the device to read mode (see WRITE TO BUFFER PRO-

GRAM command).

Notes: 1. The status register can be read during PROGRAM, ERASE, or ERASE SUSPEND operations;

the READ operation outputs data on DQ[7:0].

2. For a PROGRAM operation in progress, DQ7 outputs the complement of the bit being

programmed. For a READ operation from the address previously programmed success-

fully, DQ7 outputs existing DQ7 data. For a READ operation from addresses with blocks

to be erased while an ERASE SUSPEND operation is in progress, DQ7 outputs 0; upon

successful completion of the ERASE SUSPEND operation, DQ7 outputs 1. For an ERASE or

BLANK CHECK operation in progress, DQ7 outputs 0; upon either operation's successful

completion, DQ7 outputs 1.

3. After successful completion of a PROGRAM, ERASE, or BLANK CHECK operation, the de-

vice returns to read mode.

4. During erase suspend mode, READ operations to addresses within blocks not being

erased output memory array data as if in read mode. A protected block is treated the

same as a block not being erased. See the Toggle Flowchart for more information.

5. During erase suspend mode, DQ6 toggles when addressing a cell within a block being

erased. The toggling stops when the program/erase controller has suspended the ERASE

operation. See the Toggle Flowchart for more information.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Registers

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6. When DQ5 is set to 1, a READ/RESET command must be issued before any subsequent

command.

Table 8: Operations and Corresponding Bit Settings

Note 1 applies to entire table

Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 RY/BY# Notes

PROGRAM Any address DQ7# Toggle 0 – – 0 0 2

BLANK CHECK Any address 1 Toggle 0 – – 0 0

CHIP ERASE Any address 0 Toggle 0 1 Toggle – 0

BLOCK ERASE

before time-out

Erasing block 0 Toggle 0 0 Toggle – 0

Non-erasing block 0 Toggle 0 0 No toggle – 0

BLOCK ERASE Erasing block 0 Toggle 0 1 Toggle – 0

Non-erasing block 0 Toggle 0 1 No toggle – 0

PROGRAM

SUSPEND

Programming

block

Invalid operation High-Z

Nonprogramming

block

Outputs memory array data as if in read mode High-Z

ERASE

SUSPEND

Erasing block 1 No Toggle 0 – Toggle – High-Z

Non-erasing block Outputs memory array data as if in read mode High-Z

PROGRAM during

ERASE SUSPEND

Erasing block DQ7# Toggle 0 – Toggle – 0 2

Non-erasing block DQ7# Toggle 0 – No Toggle – 0 2

BUFFERED

PROGRAM ABORT

Any address DQ7# Toggle 0 – – 1 High-Z

PROGRAM Error Any address DQ7# Toggle 1 – – – High-Z 2

ERASE Error Any address 0 Toggle 1 1 Toggle – High-Z

BLANK CHECK Er-

ror

Any address 1 Toggle 1 1 Toggle – High-Z

Notes: 1. Unspecified data bits should be ignored.

2. DQ7# for buffer program is related to the last address location loaded.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Registers

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Figure 5: Data Polling Flowchart

Start

DQ7 = Data

DQ5 = 1

DQ1 = 1

DQ7 = Data

Yes

Read DQ7, DQ5, and DQ1

at valid address1

Read DQ7 at valid address

SuccessFailure2

Notes: 1. Valid address is the address being programmed or an address within the block being

erased or on which a BLANK CHECK operation has been executed.

2. The data polling process does not support the BLANK CHECK operation. The process

represented in the Toggle Bit Flowchart figure can provide information on the BLANK

CHECK operation.

3. Failure results: DQ5 = 1 indicates an operation error; DQ1 = 1 indicates a WRITE TO BUF-

FER PROGRAM ABORT operation.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Registers

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Figure 6: Toggle Bit Flowchart

DQ6 = Toggle

DQ5 = 1

DQ6 = Toggle

Yes

Start

Read DQ6 at valid address

Read DQ6, DQ5, and DQ1

at valid address

Read DQ6 (twice) at valid address

SuccessFailure1

DQ1 = 1

Yes

Note: 1. Failure results: DQ5 = 1 indicates an operation error; DQ1 = 1 indicates a WRITE TO BUF-

FER PROGRAM ABORT operation.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Registers

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Figure 7: Status Register Polling Flowchart

WRITE TO BUFFER

PROGRAM

Start

DQ7 = Valid data

DQ5 = 1

Yes

DQ6 = Toggling Yes

No No

Yes

PROGRAM operation

DQ6 = Toggling

DQ2 = Toggling

Yes

DQ1 = 1

Read 3 correct data?

Yes

Device busy: Repolling

PROGRAM operation

complete

PROGRAM operation

failure

WRITE TO BUFFER

PROGRAM

abort

Timeout failure

ERASE operation

complete

Erase/suspend mode

Device error

Read2.DQ6 = Read3.DQ6

Read2.DQ2 = Read3.DQ2

Read1.DQ6 = Read2.DQ6

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Registers

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Lock Register

Table 9: Lock Register Bit Definitions

Note 1 applies to entire table

Bit Name Settings Description Notes

DQ2 Password

protection

mode lock bit

0 = Password protection

mode enabled

1 = Password protection

mode disabled (Default)

Places the device permanently in password protection mode. 2

DQ1 Nonvolatile

protection

mode lock bit

0 = Nonvolatile protection

mode enabled with pass-

word protection mode

permanently disabled

1 = Nonvolatile protection

mode enabled (Default)

Places the device in nonvolatile protection mode with pass-

word protection mode permanently disabled. When shipped

from the factory, the device will operate in nonvolatile protec-

tion mode, and the memory blocks are unprotected.

DQ0 Extended

memory

block

protection bit

0 = Protected

1 = Unprotected (Default)

If the device is shipped with the extended memory block un-

locked, the block can be protected by setting this bit to 0. The

extended memory block protection status can be read in auto

select mode by issuing an AUTO SELECT command.

Notes: 1. The lock register is a 16-bit, one-time programmable register. DQ[15:3] are reserved and

are set to a default value of 1.

2. The password protection mode lock bit and nonvolatile protection mode lock bit cannot

both be programmed to 0. Any attempt to program one while the other is programmed

causes the operation to abort, and the device returns to read mode. The device is ship-

ped from the factory with the default setting.

Table 10: Block Protection Status

Nonvolatile

Protection Bit

Lock Bit1

Nonvolatile

Protection Bit2

Volatile

Protection Bit3

Block

Protection

Status Block Protection Status

1 1 1 00h Block unprotected; nonvolatile protection bit changea-

ble.

1 1 0 01h Block protected by volatile protection bit; nonvolatile

protection bit changeable.

1 0 1 01h Block protected by nonvolatile protection bit; nonvola-

tile protection bit changeable.

1 0 0 01h Block protected by nonvolatile protection bit and vola-

tile protection bit; nonvolatile protection bit changea-

ble.

0 1 1 00h Block unprotected; nonvolatile protection bit un-

changeable.

0 1 0 01h Block protected by volatile protection bit; nonvolatile

protection bit unchangeable.

0 0 1 01h Block protected by nonvolatile protection bit; nonvola-

tile protection bit unchangeable.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Registers

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Table 10: Block Protection Status (Continued)

Nonvolatile

Protection Bit

Lock Bit1

Nonvolatile

Protection Bit2

Volatile

Protection Bit3

Block

Protection

Status Block Protection Status

0 0 0 01h Block protected by nonvolatile protection bit and vola-

tile protection bit; nonvolatile protection bit unchange-

able.

Notes: 1. Nonvolatile protection bit lock bit: when cleared to 1, all nonvolatile protection bits are

unlocked; when set to 0, all nonvolatile protection bits are locked.

2. Block nonvolatile protection bit: when cleared to 1, the block is unprotected; when set

to 0, the block is protected.

3. Block volatile protection bit: when cleared to 1, the block is unprotected; when set to 0,

the block is protected.

Figure 8: Lock Register Program Flowchart

Start

Done?

DQ5 = 1

Yes

ENTER LOCK REGISTER COMMAND SET

Address-data (unlock) cycle 1

Address-data (unlock) cycle 2

Address-data cycle 3

PROGRAM LOCK REGISTER

Address-data cycle 1

Address-data cycle 2

Polling algorithm

Success:

EXIT PROTECTION COMMAND SET

(Returns to device read mode)

Address-data cycle 1

Address-data cycle 2

Failure:

READ/RESET

(Returns device to read mode)

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Registers

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Notes: 1. Each lock register bit can be programmed only once.

2. See the Block Protection Command Definitions table for address-data cycle details.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Registers

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Standard Command Definitions – Address-Data Cycles

Table 11: Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit

Note 1 applies to entire table

Command and

Code/Subcode

Bus

Size

Address and Data Cycles

Notes

1st 2nd 3rd 4th 5th 6th

A D A D A D A D A D A D

READ and AUTO SELECT Operations

READ/RESET (F0h) x8 X F0

AAA AA 555 55 X F0

x16 X F0

555 AA 2AA 55 X F0

READ CFI (98h) x8 AA 98

x16 55

AUTO SELECT (90h) x8 AAA AA 555 55 AAA 90 Note

Note

2, 3, 4

x16 555 2AA 555

BYPASS Operations

UNLOCK BYPASS (20h) x8 AAA AA 555 55 AAA 20

x16 555 2AA 555

UNLOCK BYPASS

RESET (90h/00h)

x8 X 90 X 00

x16

PROGRAM Operations

PROGRAM (A0h) x8 AAA AA 555 55 AAA A0 PA PD

x16 555 2AA 555

UNLOCK BYPASS

PROGRAM (A0h)

x8 X A0 PA PD 5

x16

WRITE TO BUFFER

PROGRAM (25h)

x8 AAA AA 555 55 BAd 25 BAd N PA PD 6, 7, 8

x16 555 2AA

UNLOCK BYPASS

WRITE TO BUFFER

PROGRAM (25h)

x8 BAd 25 BAd N PA PD 5

x16

WRITE TO BUFFER

PROGRAM CONFIRM

(29h)

x8 BAd 29

x16

BUFFERED PROGRAM

ABORT and RESET (F0h)

x8 AAA AA 555 55 AAA F0

x16 555 2AA 555

PROGRAM SUSPEND

(B0h)

x8 X B0

x16

PROGRAM RESUME

(30h)

x8 X 30

x16

ERASE Operations

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Standard Command Definitions – Address-Data Cycles

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Table 11: Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit (Continued)

Note 1 applies to entire table

Command and

Code/Subcode

Bus

Size

Address and Data Cycles

Notes

1st 2nd 3rd 4th 5th 6th

A D A D A D A D A D A D

CHIP ERASE (80/10h) x8 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10

x16 555 2AA 555 555 2AA 555

UNLOCK BYPASS

CHIP ERASE (80/10h)

x8 X 80 X 10 5

x16

BLOCK ERASE (80/30h) x8 AAA AA 555 55 AAA 80 AAA AA 555 55 BAd 30 9

x16 555 2AA 555 555 2AA

UNLOCK BYPASS

BLOCK ERASE (80/30h)

x8 X 80 BAd 30 5

x16

ERASE SUSPEND (B0h) x8 X B0

x16

ERASE RESUME (30h) x8 X 30

x16

BLANK CHECK Operations

BLANK CHECK

SETUP (EB/76h)

x8 AAA AA 555 55 BAd EB BAd 76 BAd 00 BAd 00

x16 555 2AA

BLANK CHECK CONFIRM

and READ (29h)

x8 BAd 29 BAd Note

x16

Notes: 1. A = Address; D = Data; X = "Don't Care;" BAd = Any address in the block; N = Number of

bytes to be programmed; PA = Program address; PD = Program data; Gray shading = Not

applicable. All values in the table are hexadecimal. Some commands require both a com-

mand code and subcode. For the 2Gb device, the set-up command must be issued for

each selected die.

2. These cells represent READ cycles (versus WRITE cycles for the others).

3. AUTO SELECT enables the device to read the manufacturer code, device code, block pro-

tection status, and extended memory block protection indicator.

4. AUTO SELECT addresses and data are specified in the Electronic Signature table and the

Extended Memory Block Protection table.

5. For any UNLOCK BYPASS ERASE/PROGRAM command, the first two UNLOCK cycles are

unnecessary.

6. BAd must be the same as the address loaded during the WRITE TO BUFFER PROGRAM

3rd and 4th cycles.

7. WRITE TO BUFFER PROGRAM operation: maximum cycles = 261 (x8) and 517 (x16). UN-

LOCK BYPASS WRITE TO BUFFER PROGRAM operation: maximum cycles = 259 (x8), 515

(x16). WRITE TO BUFFER PROGRAM operation: N + 1 = bytes to be programmed; maxi-

mum buffer size = 256 bytes (x8) and 1024 bytes (x16).

8. For x8, A[MAX:7] address pins should remain unchanged while A[6:0] and A-1 pins are

used to select a byte within the N + 1 byte page. For x16, A[MAX:9] address pins should

remain unchanged while A[8:0] pins are used to select a word within the N+1 word

page.

9. BLOCK ERASE address cycles can extend beyond six address-data cycles, depending on

the number of blocks to erase.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Standard Command Definitions – Address-Data Cycles

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READ and AUTO SELECT Operations

READ/RESET Command

The READ/RESET (F0h) command returns the device to read mode and resets the errors

in the status register. One or three bus WRITE operations can be used to issue the

READ/RESET command.

To return the device to read mode, this command can be issued between bus WRITE

cycles before the start of a PROGRAM or ERASE operation. If the READ/RESET com-

mand is issued during the timeout of a BLOCK ERASE operation, the device requires up

to 10μs to abort, during which time no valid data can be read.

This command will not abort an ERASE operation while in erase suspend.

READ CFI Command

The READ CFI (98h) command puts the device in read CFI mode and is only valid when

the device is in read array or auto select mode. One bus WRITE cycle is required to issue

the command.

Once in read CFI mode, bus READ operations will output data from the CFI memory

area (Refer to the Common Flash Interface for details). A READ/RESET command must

be issued to return the device to the previous mode (read array or auto select ). A sec-

ond READ/RESET command is required to put the device in read array mode from auto

select mode.

AUTO SELECT Command

At power-up or after a hardware reset, the device is in read mode. It can then be put in

auto select mode by issuing an AUTO SELECT (90h) command. Auto select mode ena-

bles the following device information to be read:

• Electronic signature, which includes manufacturer and device code information as

shown in the Electronic Signature table.

• Block protection, which includes the block protection status and extended memory

block protection indicator, as shown in the Block Protection table.

Electronic signature or block protection information is read by executing a READ opera-

tion with control signals and addresses set, as shown in the Read Electronic Signature

table or the Block Protection table, respectively. In addition, this device information can

be read or set by issuing an AUTO SELECT command.

Auto select mode can be used by the programming equipment to automatically match a

device with the application code to be programmed.

Three consecutive bus WRITE operations are required to issue an AUTO SELECT com-

mand. The device remains in auto select mode until a READ/RESET or READ CFI com-

mand is issued.

The device cannot enter auto select mode when a PROGRAM or ERASE operation is in

progress (RY/BY# LOW). However, auto select mode can be entered if the PROGRAM or

ERASE operation has been suspended by issuing a PROGRAM SUSPEND or ERASE SUS-

PEND command.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

READ and AUTO SELECT Operations

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Auto select mode is exited by performing a reset. The device returns to read mode un-

less it entered auto select mode after an ERASE SUSPEND or PROGRAM SUSPEND

command, in which case it returns to erase or program suspend mode.

Table 12: Read Electronic Signature

Note 1 applies to entire table

Read Cycle CE# OE# WE#

Address Input Data Input/Output

8-Bit/16-Bit 8-Bit Only 8-Bit Only 16-Bit Only

A[MAX:4] A3 A2 A1 A0 DQ[15]/A-1 DQ[14:8] DQ[7:0]

DQ[15]/A-1,

DQ[14:0]

Manufacturer code L L H L L L L L X X 89h 0089h

Device code 1 L L H L L L L H X X 7Eh 227Eh

Device

code 2

256Mb L L H L H H H L X X 22h 2222h

512Mb L L H L H H H L X X 23h 2223h

1Gb L L H L H H H L X X 28h 2228h

2Gb L L H L H H H L X X 48h 2248h

Device code 3 L L H L H H H H X X 01h 2201h

Note: 1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.

Table 13: Block Protection

Note 1 applies to entire table

Read Cycle CE# OE# WE#

Address Input Data Input/Output

8-Bit/16-Bit 8-Bit Only 8-Bit Only 16-Bit Only

A[MAX:16] A[15:2] A1 A0 DQ[15]/A-1 DQ[14:8] DQ[7:0]

DQ[15]/A-1,

DQ[14:0]

Extended

memory

Block

protection

indicator

(DQ7)

M29EWL L L H L L H H X X 89h20089h2

09h30009h3

M29EWH L L H L L H H X X 99h20099h2

19h30019h3

Block protection

status

L L H Block base

address

L H L X X 01h40001h4

00h50000h5

Notes: 1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.

2. Micron-prelocked (permanent).

3. Customer-lockable.

4. Protected: 01h (in x8 mode) is output on DQ[7:0]; indicates that the extended memory

block is permanently prelocked by Micron.

5. Unprotected: 00h (in x8 mode) is output on DQ[7:0]; indicates that the extended memo-

ry block can be locked by customer.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

READ and AUTO SELECT Operations

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Bypass Operations

UNLOCK BYPASS Command

The UNLOCK BYPASS (20h) command is used to place the device in unlock bypass

mode. Three bus WRITE operations are required to issue the UNLOCK BYPASS com-

mand.

When the device enters unlock bypass mode, the two initial UNLOCK cycles required

for a standard PROGRAM or ERASE operation are not needed, thus enabling faster total

program or erase time.

The UNLOCK BYPASS command is used in conjunction with UNLOCK BYPASS PRO-

GRAM or UNLOCK BYPASS ERASE commands to program or erase the device faster

than with standard PROGRAM or ERASE commands. When the cycle time to the device

is long, considerable time savings can be gained by using these commands. When in

unlock bypass mode, only the following commands are valid:

• The UNLOCK BYPASS PROGRAM command can be issued to program addresses

within the device.

• The UNLOCK BYPASS BLOCK ERASE command can then be issued to erase one or

more memory blocks.

• The UNLOCK BYPASS CHIP ERASE command can be issued to erase the whole mem-

ory array.

• The UNLOCK BYPASS WRITE TO BUFFER PROGRAM command can be issued to

speed up the programming operation.

• The UNLOCK BYPASS RESET command can be issued to return the device to read

mode.

In unlock bypass mode, the device can be read as if in read mode.

In addition to the UNLOCK BYPASS command, when VPP/WP# is raised to VPPH, the de-

vice automatically enters unlock bypass mode. When V PP/WP# returns to VIH or VIL, the

device is no longer in unlock bypass mode and normal operation resumes. The transi-

tions from VIH to VPPH and from VPPH to VIH must be slower than tVHVPP (see the Accel-

erated Program, Data Polling/Toggle AC Characteristics).

Note: Micron recommends the user enter and exit unlock bypass mode using ENTER

UNLOCK BYPASS and UNLOCK BYPASS RESET commands rather than raising VPP/WP#

to VPPH. VPP/WP# should never be raised to VPPH from any mode except read mode; oth-

erwise, the device may be left in an indeterminate state.

UNLOCK BYPASS RESET Command

The UNLOCK BYPASS RESET (90/00h) command is used to return to read/reset mode

from unlock bypass mode. Two bus WRITE operations are required to issue the UN-

LOCK BYPASS RESET command. The READ/RESET command does not exit from un-

lock bypass mode.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Bypass Operations

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Program Operations

PROGRAM Command

The PROGRAM (A0h) command can be used to program a value to one address in the

memory array. The command requires four bus WRITE operations, and the final WRITE

operation latches the address and data in the internal state machine and starts the pro-

gram/erase controller. After programming has started, bus READ operations output the

status register content.

Programming can be suspended and then resumed by issuing a PROGRAM SUSPEND

command and a PROGRAM RESUME command, respectively.

If the address falls in a protected block, the PROGRAM command is ignored, and the

data remains unchanged. The status register is not read, and no error condition is given.

After the PROGRAM operation has completed, the device returns to read mode, unless

an error has occurred. When an error occurs, bus READ operations to the device contin-

ue to output the status register. A READ/RESET command must be issued to reset the

error condition and return the device to read mode.

The PROGRAM command cannot change a bit set to 0 back to 1, and an attempt to do

so is masked during a PROGRAM operation. Instead, an ERASE command must be used

to set all bits in one memory block or in the entire memory from 0 to 1.

The PROGRAM operation is aborted by performing a reset or by powering-down the de-

vice. In this case, data integrity cannot be ensured, and it is recommended that the

words or bytes that were aborted be reprogrammed.

UNLOCK BYPASS PROGRAM Command

When the device is in unlock bypass mode, the UNLOCK BYPASS PROGRAM (A0h)

command can be used to program one address in the memory array. The command re-

quires two bus WRITE operations instead of four required by a standard PROGRAM

command; the final WRITE operation latches the address and data and starts the pro-

gram/erase controller (The standard PROGRAM command requires four bus WRITE op-

erations). The PROGRAM operation using the UNLOCK BYPASS PROGRAM command

behaves identically to the PROGRAM operation using the PROGRAM command. The

operation cannot be aborted. A bus READ operation to the memory outputs the status

WRITE TO BUFFER PROGRAM Command

The WRITE TO BUFFER PROGRAM (25h) command makes use of the program buffer to

speed up programming and dramatically reduces system programming time compared

to the standard non-buffered PROGRAM command. 256Mb through 2Gb devices sup-

port a 512-word maximum program buffer.

When issuing a WRITE TO BUFFER PROGRAM command, V PP/WP# can be held HIGH

or raised to VPPH. Also, it can be held LOW if the block is not the lowest or highest block,

depending on the part number.

The following successive steps are required to issue the WRITE TO BUFFER PROGRAM

command:

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Program Operations

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First, two UNLOCK cycles are issued. Next, a third bus WRITE cycle sets up the WRITE

TO BUFFER PROGRAM command. The set-up code can be addressed to any location

within the targeted block. Then, a fourth bus WRITE cycle sets up the number of words/

bytes to be programmed. Value n is written to the same block address, where n + 1 is the

number of words/bytes to be programmed. Value n + 1 must not exceed the size of the

program buffer, or the operation will abort. A fifth cycle loads the first address and data

to be programmed. Last, n bus WRITE cycles load the address and data for each word/

byte into the program buffer. Addresses must lie within the range from the start address

+1 to the start address + (n - 1).

Optimum programming performance and lower power usage are achieved by aligning

the starting address at the beginning of a 512-word boundary (A[8:0] = 0x000h). Any

buffer size smaller than 512 words is allowed within a 512-word boundary, while all ad-

dresses used in the operation must lie within the 512-word boundary. In addition, any

crossing boundary buffer program will result in a program abort. For a x8 device, maxi-

mum buffer size is 256 bytes; for a x16 device, the maximum buffer size is 1024 bytes.

To program the content of the program buffer, this command must be followed by a

WRITE TO BUFFER PROGRAM CONFIRM command.

If an address is written several times during a WRITE TO BUFFER PROGRAM operation,

the address/data counter will be decremented at each data load operation, and the data

will be programmed to the last word loaded into the buffer.

Invalid address combinations or the incorrect sequence of bus WRITE cycles will abort

the WRITE TO BUFFER PROGRAM command.

The status register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status

during a WRITE TO BUFFER PROGRAM operation.

The WRITE TO BUFFER PROGRAM command should not be used to change a bit set to

0 back to 1, and an attempt to do so is masked during the operation. Rather than the

WRITE TO BUFFER PROGRAM command, the ERASE command should be used to set

memory bits from 0 to 1.

Figure 9: Boundary Condition of Program Buffer Size

Any

buffer

program

attempt

is not

allowed

0400h

512-word

program

buffer is

allowed

512-word

program

buffer is

allowed

511 words

or less are

allowed

in the

program

buffer

0000h

512 Words

0200h

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Program Operations

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Figure 10: WRITE TO BUFFER PROGRAM Flowchart

Abort

WRITE TO BUFFER

Write buffer data,

start address

Start

X = n

Write n,1

block address

WRITE TO BUFFER

and PROGRAM

aborted2

Write to a different

block address

X = 0

Write next data,3

program address pair

WRITE TO BUFFER

confirm, block address

X = X - 1

Yes

DQ7 = Data

Yes

DQ5 = 1

Yes

DQ1 = 1 No

Yes

WRITE TO BUFFER

command,

block address

Read status register

(DQ1, DQ5, DQ7) at

last loaded address

DQ7 = Data4

Yes

Check status register

(DQ5, DQ7) at

last loaded address

Fail or

abort5End

First three cycles of the

WRITE TO BUFFER

PROGRAM command

Notes: 1. n + 1 is the number of addresses to be programmed.

2. The BUFFERED PROGRAM ABORT and RESET command must be issued to return the de-

vice to read mode.

3. When the block address is specified, any address in the selected block address space is

acceptable. However, when loading program buffer address with data, all addresses

must fall within the selected program buffer page.

4. DQ7 must be checked because DQ5 and DQ7 may change simultaneously.

5. If this flowchart location is reached because DQ5 = 1, then the WRITE TO BUFFER PRO-

GRAM command failed. If this flowchart location is reached because DQ1 = 1, then the

WRITE TO BUFFER PROGRAM command aborted. In both cases, the appropriate RESET

command must be issued to return the device to read mode: A RESET command if the

operation failed; a WRITE TO BUFFER PROGRAM ABORT AND RESET command if the op-

eration aborted.

6. See the Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit table for

details about the WRITE TO BUFFER PROGRAM command sequence.

UNLOCK BYPASS WRITE TO BUFFER PROGRAM Command

When the device is in unlock bypass mode, the UNLOCK BYPASS WRITE TO BUFFER

(25h) command can be used to program the device in fast program mode. The com-

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Program Operations

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mand requires two bus WRITE operations fewer than the standard WRITE TO BUFFER

PROGRAM command.

The UNLOCK BYPASS WRITE TO BUFFER PROGRAM command behaves the same way

as the WRITE TO BUFFER PROGRAM command: the operation cannot be aborted, and

a bus READ operation to the memory outputs the status register.

The WRITE TO BUFFER PROGRAM CONFIRM command is used to confirm an UN-

LOCK BYPASS WRITE TO BUFFER PROGRAM command and to program the n + 1

words/bytes loaded in the program buffer by this command.

WRITE TO BUFFER PROGRAM CONFIRM Command

The WRITE TO BUFFER PROGRAM CONFIRM (29h) command is used to confirm a

WRITE TO BUFFER PROGRAM command and to program the n + 1 words/bytes loaded

in the program buffer by this command.

BUFFERED PROGRAM ABORT AND RESET Command

A BUFFERED PROGRAM ABORT AND RESET (F0h) command must be issued to reset

the device to read mode when the BUFFER PROGRAM operation is aborted. The buffer

programming sequence can be aborted in the following ways:

• Load a value that is greater than the page buffer size during the number of locations

to program in the WRITE TO BUFFER PROGRAM command.

• Write to an address in a different block than the one specified during the WRITE BUF-

FER LOAD command.

• Write an address/data pair to a different write buffer page than the one selected by

the starting address during the program buffer data loading stage of the operation.

• Write data other than the CONFIRM command after the specified number of data

load cycles.

The abort condition is indicated by DQ1 = 1, DQ7 = DQ7# (for the last address location

loaded), DQ6 = toggle, and DQ5 = 0 (all of which are status register bits). A BUFFERED

PROGRAM ABORT and RESET command sequence must be written to reset the device

for the next operation.

Note: The full three-cycle BUFFERED PROGRAM ABORT and RESET command se-

quence is required when using buffer programming features in unlock bypass mode.

PROGRAM SUSPEND Command

The PROGRAM SUSPEND (B0h) command can be used to interrupt a program opera-

tion so that data can be read from any block. When the PROGRAM SUSPEND command

is issued during a program operation, the device suspends the operation within the pro-

gram suspend latency time and updates the status register bits.

After the program operation has been suspended, data can be read from any address.

However, data is invalid when read from an address where a program operation has

been suspended.

The PROGRAM SUSPEND command may also be issued during a PROGRAM operation

while an erase is suspended. In this case, data may be read from any address not in

erase suspend or program suspend mode. To read from the extended memory block

area (one-time programmable area), the ENTER/EXIT EXTENDED MEMORY BLOCK

command sequences must be issued.

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Program Operations

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The system may also issue the AUTO SELECT command sequence when the device is in

program suspend mode. The system can read as many auto select codes as required.

When the device exits auto select mode, the device reverts to program suspend mode

and is ready for another valid operation.

The PROGRAM SUSPEND operation is aborted by performing a device reset or power-

down. In this case, data integrity cannot be ensured, and it is recommended that the

words or bytes that were aborted be reprogrammed.

PROGRAM RESUME Command

The PROGRAM RESUME (30h) command must be issued to exit a program suspend

mode and resume a PROGRAM operation. The controller can use DQ7 or DQ6 status

bits to determine the status of the PROGRAM operation. After a PROGRAM RESUME

command is issued, subsequent PROGRAM RESUME commands are ignored. Another

PROGRAM SUSPEND command can be issued after the device has resumed program-

ming.

Erase Operations

CHIP ERASE Command

The CHIP ERASE (80/10h) command erases the entire chip. Six bus WRITE operations

are required to issue the command and start the program/erase controller.

Protected blocks are not erased. If all blocks are protected, the CHIP ERASE operation

appears to start, but will terminate within approximately100μs, leaving the data un-

changed. No error is reported when protected blocks are not erased.

During the CHIP ERASE operation, the device ignores all other commands, including

ERASE SUSPEND. It is not possible to abort the operation. All bus READ operations dur-

ing CHIP ERASE output the status register on the data I/Os. See the Status Register sec-

tion for more details.

After the CHIP ERASE operation completes, the device returns to read mode, unless an

error has occurred. If an error occurs, the device will continue to output the status regis-

ter. A READ/RESET command must be issued to reset the error condition and return to

read mode.

The CHIP ERASE command sets all of the bits in unprotected blocks of the device to 1.

All previous data is lost.

The operation is aborted by performing a reset or by powering-down the device. In this

case, data integrity cannot be ensured, and it is recommended that the entire chip be

erased again.

UNLOCK BYPASS CHIP ERASE Command

When the device is in unlock bypass mode, the UNLOCK BYPASS CHIP ERASE (80/10h)

command can be used to erase all memory blocks at one time. The command requires

only two bus WRITE operations instead of six using the standard CHIP ERASE com-

mand. The final bus WRITE operation starts the program/erase controller.

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Erase Operations

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The UNLOCK BYPASS CHIP ERASE command behaves the same way as the CHIP

ERASE command: the operation cannot be aborted, and a bus READ operation to the

memory outputs the status register.

BLOCK ERASE Command

The BLOCK ERASE (80/30h) command erases a list of one or more blocks. It sets all of

the bits in the unprotected selected blocks to 1. All previous data in the selected blocks

is lost.

Six bus WRITE operations are required to select the first block in the list. Each addition-

al block in the list can be selected by repeating the sixth bus WRITE operation using the

address of the additional block. After the command sequence is written, a block erase

timeout occurs. During the timeout period, additional block addresses and BLOCK

ERASE commands can be written. After the program/erase controller has started, it is

not possible to select any more blocks. Each additional block must therefore be selected

within the timeout period of the last block. The timeout timer restarts when an addi-

tional block is selected. After the sixth bus WRITE operation, a bus READ operation out-

puts the status register. See the WE#-Controlled Program waveforms for details on how

to identify if the program/erase controller has started the BLOCK ERASE operation.

After the BLOCK ERASE operation completes, the device returns to read mode, unless

an error has occurred. If an error occurs, bus READ operations will continue to output

the status register. A READ/RESET command must be issued to reset the error condi-

tion and return to read mode.

If any selected blocks are protected, they are ignored, and all the other selected blocks

are erased. If all of the selected blocks are protected, the BLOCK ERASE operation ap-

pears to start, but will terminate within approximately100μs, leaving the data un-

changed. No error condition is given when protected blocks are not erased.

During the BLOCK ERASE operation, the device ignores all commands except the

ERASE SUSPEND command and the READ/RESET command, which is accepted only

during the timeout period. The operation is aborted by performing a reset or powering-

down the device. In this case, data integrity cannot be ensured, and it is recommended

that the aborted blocks be erased again.

UNLOCK BYPASS BLOCK ERASE Command

When the device is in unlock bypass mode, the UNLOCK BYPASS BLOCK ERASE

(80/30h) command can be used to erase one or more memory blocks at a time. The

command requires two bus WRITE operations instead of six using the standard BLOCK

ERASE command. The final bus WRITE operation latches the address of the block and

starts the program/erase controller.

To erase multiple blocks (after the first two bus WRITE operations have selected the first

block in the list), each additional block in the list can be selected by repeating the sec-

ond bus WRITE operation using the address of the additional block.

The UNLOCK BYPASS BLOCK ERASE command behaves the same way as the BLOCK

ERASE command: the operation cannot be aborted, and a bus READ operation to the

memory outputs the status register. See the BLOCK ERASE Command section for de-

tails.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Erase Operations

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ERASE SUSPEND Command

The ERASE SUSPEND (B0h) command temporarily suspends a BLOCK ERASE opera-

tion. One bus WRITE operation is required to issue the command. The block address is

"Don't Care."

The program/erase controller suspends the ERASE operation within the erase suspend

latency time of the ERASE SUSPEND command being issued. However, when the

ERASE SUSPEND command is written during the block erase timeout, the device im-

mediately terminates the timeout period and suspends the ERASE operation. After the

program/erase controller has stopped, the device operates in read mode, and the erase

is suspended.

During an ERASE SUSPEND operation, it is possible to read and execute PROGRAM op-

erations or WRITE TO BUFFER PROGRAM operations in blocks that are not suspended.

Both READ and PROGRAM operations behave normally on these blocks. Reading from

blocks that are suspended will output the status register. If any attempt is made to pro-

gram in a protected block or in the suspended block, the PROGRAM command is ignor-

ed, and the data remains unchanged. In this case, the status register is not read, and no

error condition is given.

It is also possible to issue AUTO SELECT, READ CFI, and UNLOCK BYPASS commands

during an ERASE SUSPEND operation. The READ/RESET command must be issued to

return the device to read array mode before the RESUME command will be accepted.

During an ERASE SUSPEND operation, a bus READ operation to the extended memory

block will output the extended memory block data. After the device enters extended

memory block mode, the EXIT EXTENDED MEMORY BLOCK command must be issued

before the ERASE operation can be resumed.

An ERASE SUSPEND command is ignored if it is written during a CHIP ERASE opera-

tion.

If the ERASE SUSPEND operation is aborted by performing a device reset or power-

down, data integrity cannot be ensured, and it is recommended that the suspended

blocks be erased again.

ERASE RESUME Command

The ERASE RESUME (30h) command restarts the program/erase controller after an

ERASE SUSPEND operation.

The device must be in read array mode before the RESUME command will be accepted.

An erase can be suspended and resumed more than once.

BLANK CHECK Operation

BLANK CHECK Commands

Two commands are required to execute a BLANK CHECK operation: BLANK CHECK

SETUP (EB/76h) and BLANK CHECK CONFIRM AND READ (29h).

The BLANK CHECK operation determines whether a specified block is blank (that is,

completely erased). It can also be used to determine whether a previous ERASE opera-

tion was successful, including ERASE operations that might have been interrupted by

power loss.

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BLANK CHECK Operation

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The BLANK CHECK operation checks for cells that are programmed or over-erased. If it

finds any, it returns a failure status, indicating that the block is not blank. If it returns a

passing status, the block is guaranteed blank (all 1s) and is ready to program.

Before executing, the ERASE operation initiates a BLANK CHECK operation, and if the

target block is blank, the ERASE operation is skipped, benefitting overall cycle perform-

ance; otherwise, the ERASE operation continues.

The BLANK CHECK operation can occur in only one block at a time, and during its exe-

cution, reading the status register is the only other operation allowed. Reading from any

address in the device enables reading the status register to monitor blank check pro-

gress or errors. Operations such as READ (array data), PROGRAM, ERASE, and any sus-

pended operation are not allowed.

After the BLANK CHECK operation has completed, the device returns to read mode un-

less an error has occurred. When an error occurs, the device continues to output status

return the device to read mode.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

BLANK CHECK Operation

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Block Protection Command Definitions – Address-Data Cycles

Table 14: Block Protection Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit

Notes 1 and 2 apply to entire table

Command and

Code/Subcode

Bus

Size

Address and Data Cycles

Notes

1st 2nd 3rd 4th

…

nth

A D A D A D A D A D

LOCK REGISTER Commands

ENTER LOCK REGISTER

COMMAND SET (40h)

x8 AAA AA 555 55 AAA 40 3

x16 555 AA 2AA 55 555

PROGRAM LOCK REGISTER

(A0h)

x8 X A0 X Data 5

x16

READ LOCK REGISTER x8 X Data 4, 5, 6

x16

PASSWORD PROTECTION Commands

ENTER PASSWORD

PROTECTION COMMAND

SET (60h)

x8 AAA AA 555 55 AAA 60 3

x16 555 AA 2AA 55 555

PROGRAM PASSWORD

(A0h)

x8 X A0 PWAn PWDn 7

x16

READ PASSWORD x8 00 PWD0 01 PWD1 02 PWD2 03 PWD3 … 07 PWD7 4, 6, 8,

x16 00 PWD0 01 PWD1 02 PWD2 03 PWD3

UNLOCK PASSWORD (25h/

03h)

x8 00 25 00 03 00 PWD0 01 PWD1 … 00 29 8, 10

x16

NONVOLATILE PROTECTION Commands

ENTER NONVOLATILE

PROTECTION COMMAND

SET (C0h)

x8 AAA AA 555 55 AAA C0 3

x16 555 AA 2AA 55 555

PROGRAM NONVOLATILE

PROTECTION BIT (A0h)

x8 X A0 BAd 00 11

x16

READ NONVOLATILE

PROTECTION BIT STATUS

x8 BAd READ(0) 4, 6,

x16

CLEAR ALL NONVOLATILE

PROTECTION BITS (80/30h)

x8 X 80 00 30 12

x16

NONVOLATILE PROTECTION BIT LOCK BIT Commands

ENTER NONVOLATILE

PROTECTION BIT LOCK BIT

COMMAND SET (50h)

x8 AAA AA 555 55 AAA 50 3

x16 555 AA 2AA 55 555

PROGRAM NONVOLATILE

PROTECTION BIT LOCK BIT

(A0h)

x8 X A0 X 00 11

x16

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Block Protection Command Definitions – Address-Data Cycles

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Table 14: Block Protection Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit (Continued)

Notes 1 and 2 apply to entire table

Command and

Code/Subcode

Bus

Size

Address and Data Cycles

Notes

1st 2nd 3rd 4th

…

nth

A D A D A D A D A D

READ NONVOLATILE

PROTECTION BIT LOCK BIT

STATUS

x8 X READ(0) 4, 6,

x16

VOLATILE PROTECTION Commands

ENTER VOLATILE

PROTECTION COMMAND

SET (E0h)

x8 AAA AA 555 55 AAA E0 3

x16 555 AA 2AA 55 555

PROGRAM VOLATILE

PROTECTION BIT (A0h)

x8 X A0 BAd 00 11

x16

READ VOLATILE

PROTECTION BIT STATUS

x8 BAd READ(0) 4, 6

x16

CLEAR VOLATILE

PROTECTION BIT (A0h)

x8 X A0 BAd 01 11

x16

EXTENDED MEMORY BLOCK Commands

ENTER EXTENDED

MEMORY BLOCK (88h)

x8 AAA AA 555 55 AAA 88 3

x16 555 AA 2AA 55 555

EXIT EXTENDED

MEMORY BLOCK (90/00h)

x8 AAA AA 555 55 AAA 90 X 00

x16 555 AA 2AA 55 555

EXIT PROTECTION Commands

EXIT PROTECTION

COMMAND SET (90/00h)

x8 X 90 X 00 3

x16

Notes: 1. Key: A = Address and D = Data; X = "Don’t Care;" BAd = any address in the block; PWDn

= password bytes 0 to 7; PWAn = password address, n = 0 to 7; Gray = not applicable. All

values in the table are hexadecimal.

2. DQ[15:8] are "Don’t Care" during UNLOCK and COMMAND cycles. A[MAX:16] are

"Don’t Care" during UNLOCK and COMMAND cycles, unless an address is required.

3. The ENTER command sequence must be issued prior to any operation. It disables READ

and WRITE operations from and to block 0. READ and WRITE operations from and to

any other block are allowed. Also, when an ENTER COMMAND SET command is issued,

an EXIT PROTECTION COMMAND SET command must be issued to return the device to

READ mode.

4. READ REGISTER/PASSWORD commands have no command code; CE# and OE# are driven

LOW and data is read according to a specified address.

5. Data = Lock register content.

6. All address cycles shown for this command are READ cycles.

7. Only one portion of the password can be programmed or read by each PROGRAM PASS-

WORD command.

8. Each portion of the password can be entered or read in any order as long as the entire

64-bit password is entered or read.

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Block Protection Command Definitions – Address-Data Cycles

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9. For the x8 READ PASSWORD command, the nth (and final) address cycle equals the 8th

address cycle. From the 5th to the 8th address cycle, the values for each address and da-

ta pair continue the pattern shown in the table as follows: for x8, address and data = 04

and PWD4; 05 and PWD5; 06 and PWD6; 07 and PWD7.

10. For the x8 UNLOCK PASSWORD command, the nth (and final) address cycle equals the

11th address cycle. From the 5th to the 10th address cycle, the values for each address

and data pair continue the pattern shown in the table as follows: address and data = 02

and PWD2; 03 and PWD3; 04 and PWD4; 05 and PWD5; 06 and PWD6; 07 and PWD7.

For the x16 UNLOCK PASSWORD command, the nth (and final) address cycle equals the

7th address cycle. For the 5th and 6th address cycles, the values for the address and data

pair continue the pattern shown in the table as follows: address and data = 02 and

PWD2; 03 and PWD3.

11. Both nonvolatile and volatile protection bit settings are as follows: Protected state = 00;

Unprotected state= 01.

12. The CLEAR ALL NONVOLATILE PROTECTION BITS command programs all nonvolatile pro-

tection bits before erasure. This prevents over-erasure of previously cleared nonvolatile

protection bits.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Block Protection Command Definitions – Address-Data Cycles

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Protection Operations

Blocks can be protected individually against accidental PROGRAM, ERASE, or READ op-

erations on both 8-bit and 16-bit configurations. The block protection scheme is shown

in the Software Protection Scheme figure.

Memory block and extended memory block protection is configured through the lock

LOCK REGISTER Commands

After the ENTER LOCK REGISTER COMMAND SET (40h) command has been issued, all

bus READ or PROGRAM operations can be issued to the lock register.

The PROGRAM LOCK REGISTER (A0h) command allows the lock register to be config-

ured. The programmed data can then be checked with a READ LOCK REGISTER com-

mand by driving CE# and OE# LOW with the appropriate address data on the address

bus.

PASSWORD PROTECTION Commands

After the ENTER PASSWORD PROTECTION COMMAND SET (60h) command has been

issued, the commands related to password protection mode can be issued to the device.

The PROGRAM PASSWORD (A0h) command is used to program the 64-bit password

used in the password protection mode. To program the 64-bit password, the complete

command sequence must be entered eight times at eight consecutive addresses selec-

ted by A[1:0] plus DQ15/A-1 in 8-bit mode, or four times at four consecutive addresses

selected by A[1:0] in 16-bit mode. By default, all password bits are set to 1. The password

can be checked by issuing a READ PASSWORD command.

Note: To use the password protection feature on the 2Gb device, the password must be

programmed to both upper die and lower die.

The READ PASSWORD command is used to verify the password used in password pro-

tection mode. To verify the 64-bit password, the complete command sequence must be

entered eight times at eight consecutive addresses selected by A[1:0] plus DQ15/A-1 in

8-bit mode, or four times at four consecutive addresses selected by A[1:0] in 16-bit

mode. If the password mode lock bit is programmed and the user attempts to read the

password, the device will output FFh onto the I/O data bus.

The UNLOCK PASSWORD (25/03h) command is used to clear the nonvolatile protec-

tion bit lock bit, allowing the nonvolatile protection bits to be modified. The UNLOCK

PASSWORD command must be issued, along with the correct password, and requires a

1μs delay between successive UNLOCK PASSWORD commands in order to prevent

hackers from cracking the password by trying all possible 64-bit combinations. If this

delay does not occur, the latest command will be ignored. Approximately 1μs is required

for unlocking the device after the valid 64-bit password has been provided.

NONVOLATILE PROTECTION Commands

After the ENTER NONVOLATILE PROTECTION COMMAND SET (C0h) command has

been issued, the commands related to nonvolatile protection mode can be issued to the

device.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Protection Operations

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A block can be protected from program or erase by issuing a PROGRAM NONVOLATILE

PROTECTION BIT (A0h) command, along with the block address. This command sets

the nonvolatile protection bit to 0 for a given block.

The status of a nonvolatile protection bit for a given block or group of blocks can be

read by issuing a READ NONVOLATILE MODIFY PROTECTION BIT command, along

with the block address.

The nonvolatile protection bits are erased simultaneously by issuing a CLEAR ALL

NONVOLATILE PROTECTION BITS (80/30h) command. No specific block address is re-

quired. If the nonvolatile protection bit lock bit is set to 0, the command fails.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Protection Operations

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Figure 11: Program/Erase Nonvolatile Protection Bit Algorithm

Yes

DQ6 = Toggle

ENTER Nonvolatile

Protection

COMMAND SET

Start

PROGRAM Nonvolatile

Protection Bit

Addr = BAd

Fail

Read byte twice

Addr = BAd

Read byte twice

Addr = BAd

Yes

DQ6 = Toggle

Reset

DQ5 = 1

EXIT PROTECTION

COMMAND SET

DQ0 =

1 (erase)

0 (program)

Read byte twice

Addr = BAd

Wait 500µs

Pass

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Protection Operations

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NONVOLATILE PROTECTION BIT LOCK BIT Commands

After the ENTER NONVOLATILE PROTECTION BIT LOCK BIT COMMAND SET (50h)

command has been issued, the commands that allow the nonvolatile protection bit lock

bit to be set can be issued to the device.

The PROGRAM NONVOLATILE PROTECTION BIT LOCK BIT (A0h) command is used to

set the nonvolatile protection bit lock bit to 0, thus locking the nonvolatile protection

bits and preventing them from being modified.

The READ NONVOLATILE PROTECTION BIT LOCK BIT STATUS command is used to

read the status of the nonvolatile protection bit lock bit.

VOLATILE PROTECTION Commands

After the ENTER VOLATILE PROTECTION COMMAND SET (E0h) command has been

issued, commands related to the volatile protection mode can be issued to the device.

The PROGRAM VOLATILE PROTECTION BIT (A0h) command individually sets a vola-

tile protection bit to 0 for a given block. If the nonvolatile protection bit for the same

block is set, the block is locked regardless of the value of the volatile protection bit. (See

the Block Protection Status table.)

The status of a volatile protection bit for a given block can be read by issuing a READ

VOLATILE PROTECTION BIT STATUS command along with the block address.

The CLEAR VOLATILE PROTECTION BIT (A0h) command individually clears (sets to 1)

the volatile protection bit for a given block. If the nonvolatile protection bit for the same

block is set, the block is locked regardless of the value of the volatile protection bit. (See

the Block Protection Status table.)

EXTENDED MEMORY BLOCK Commands

The device has one extra 128-word extended memory block that can be accessed only

by the ENTER EXTENDED MEMORY BLOCK (88h) command. The extended memory

block is 128 words (x16) or 256 bytes (x8). It is used as a security block to provide a per-

manent 128-bit security identification number or to store additional information. The

device can be shipped with the extended memory block prelocked permanently by Mi-

cron, including the 128-bit security identification number. Or, the device can be ship-

ped with the extended memory block unlocked, enabling customers to permanently

program and lock it. (See Lock Register, the AUTO SELECT command, and the Block

Protection table.)

Table 15: Extended Memory Block Address and Data

Address Data

x8 x16 Micron prelocked Customer Lockable

000000h–00000Fh 000000h–000007h Secure ID number Determined by customer Secure ID number

000010h–0000FFh 000008h–00007Fh Protected and

unavailable

Determined by customer

After the ENTER EXTENDED MEMORY BLOCK command has been issued, the device

enters the extended memory block mode. All bus READ or PROGRAM operations are

conducted on the extended memory block, and the extended memory block is ad-

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Protection Operations

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dressed using the addresses occupied by block 0 in the other operating modes (see the

Memory Map table).

In extended memory block mode, ERASE, CHIP ERASE, ERASE SUSPEND, and ERASE

RESUME commands are not allowed. The extended memory block cannot be erased,

and each bit of the extended memory block can only be programmed once.

The extended memory block is protected from further modification by programming

lock register bit 0. Once invoked, this protection cannot be undone.

The device remains in extended memory block mode until the EXIT EXTENDED MEM-

ORY BLOCK (90/00h) command is issued, which returns the device to read mode, or

until power is removed from the device. After a power-up sequence or hardware reset,

the device will revert to reading memory blocks in the main array.

EXIT PROTECTION Command

The EXIT PROTECTION COMMAND SET (90/00h) command is used to exit the lock

tile protection bit lock bit command set modes and return the device to read mode.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Protection Operations

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Device Protection

Hardware Protection

The VPP/WP# function provides a hardware method of protecting either the highest/

lowest block. When V PP/WP# is LOW, PROGRAM and ERASE operations on either of

these block options is ignored to provide protection. When V PP/WP# is HIGH, the de-

vice reverts to the previous protection status for the highest/lowest block or top/bottom

two blocks. PROGRAM and ERASE operations can modify the data in either of these

block options unless block protection is enabled.

Note: Micron highly recommends driving VPP/WP# HIGH or LOW. If a system needs to

float the VPP/WP# pin, without a pull-up/pull-down resistor and no capacitor, then an

internal pull-up resistor is enabled.

Table 16: VPP/WP# Functions

VPP/WP# Settings Function

VIL Highest/lowest block is protected; for a 2Gb device, both the highest and the lowest blocks

are hardware-protected (block 0 and block 2047)

VIH Highest/lowest block or the top/bottom two blocks are unprotected unless software pro-

tection is activated.

Software Protection

Four software protection modes are available:

• Volatile protection

• Nonvolatile protection

• Password protection

• Password access

The device is shipped with all blocks unprotected. On first use, the device defaults to

the nonvolatile protection mode but can be activated in either the nonvolatile protec-

tion or password protection mode.

The desired protection mode is activated by setting either the nonvolatile protection

mode lock bit or the password protection mode lock bit of the lock register (see the Lock

ter the protection mode has been activated, it cannot be changed, and the device is set

permanently to operate in the selected protection mode. It is recommended that the

desired software protection mode be activated when first programming the device.

For the lowest and highest blocks, a higher level of block protection can be achieved by

locking the blocks using nonvolatile protection mode and holding VPP /WP# LOW.

Blocks with volatile protection and nonvolatile protection can coexist within the memo-

ry array. If the user attempts to program or erase a protected block, the device ignores

the command and returns to read mode.

The block protection status can be read by performing a read electronic signature or by

issuing an AUTO SELECT command (see the Block Protection table).

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Device Protection

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Refer to the Block Protection Status table and the Software Protection Scheme figure for

details on the block protection scheme. Refer to the Protection Operations section for a

description of the command sets.

Volatile Protection Mode

Volatile protection enables the software application to protect blocks against inadver-

tent change and can be disabled when changes are needed. Volatile protection bits are

unique for each block and can be individually modified. Volatile protection bits control

the protection scheme only for unprotected blocks whose nonvolatile protection bits

are cleared to 1. Issuing a PROGRAM VOLATILE PROTECTION BIT or CLEAR VOLATILE

PROTECTION BIT command sets to 0 or clears to 1 the volatile protection bits and pla-

ces the associated blocks in the protected (0) or unprotected (1) state, respectively. The

volatile protection bit can be set or cleared as often as needed.

When the device is first shipped, or after a power-up or hardware reset, the volatile pro-

tection bits default to 1 (unprotected).

Nonvolatile Protection Mode

A nonvolatile protection bit is assigned to each block. Each of these bits can be set for

protection individually by issuing a PROGRAM NONVOLATILE PROTECTION BIT com-

mand. Also, each device has one global volatile bit called the nonvolatile protection bit

lock bit; it can be set to protect all nonvolatile protection bits at once. This global bit

must be set to 0 only after all nonvolatile protection bits are configured to the desired

settings. When set to 0, the nonvolatile protection bit lock bit prevents changes to the

state of the nonvolatile protection bits. When cleared to 1, the nonvolatile protection

bits can be set and cleared using the PROGRAM NONVOLATILE PROTECTION BIT and

CLEAR ALL NONVOLATILE PROTECTION BITS commands, respectively.

No software command unlocks the nonvolatile protection bit lock bit unless the device

is in password protection mode; in nonvolatile protection mode, the nonvolatile protec-

tion bit lock bit can be cleared only by taking the device through a hardware reset or

power-up.

Nonvolatile protection bits cannot be cleared individually; they must be cleared all at

once using a CLEAR ALL NONVOLATILE PROTECTION BITS command. They will re-

main set through a hardware reset or a power-down/power-up sequence.

If one of the nonvolatile protection bits needs to be cleared (unprotected), additional

steps are required: First, the nonvolatile protection bit lock bit must be cleared to 1, us-

ing either a power-cycle or hardware reset. Then, the nonvolatile protection bits can be

changed to reflect the desired settings. Finally, the nonvolatile protection bit lock bit

must be set to 0 to lock the nonvolatile protection bits. The device now will operate nor-

mally.

To achieve the best protection, the PROGRAM NONVOLATILE PROTECTION LOCK BIT

command should be executed early in the boot code, and the boot code should be pro-

tected by holding VPP/WP# LOW.

Nonvolatile protection bits and volatile protection bits have the same function when

VPP/WP# is HIGH or when VPP/WP# is at the voltage for program acceleration (VPPH ).

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Device Protection

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Password Protection Mode

The password protection mode provides a higher level of security than the nonvolatile

protection mode by requiring a 64-bit password to unlock the nonvolatile protection bit

lock bit. In addition to this password requirement, the nonvolatile protection bit lock

bit is set to 0 after power-up and reset to maintain the device in password protection

mode.

Executing the UNLOCK PASSWORD command by entering the correct password clears

the nonvolatile protection bit lock bit, enabling the block nonvolatile protection bits to

be modified. If the password provided is incorrect, the nonvolatile protection bit lock

bit remains locked, and the state of the nonvolatile protection bits cannot be modified.

To place the device in password protection mode, the following two steps are required:

First, before activating the password protection mode, a 64-bit password must be set

and the setting verified. Password verification is allowed only before the password pro-

tection mode is activated. Next, password protection mode is activated by program-

ming the password protection mode lock bit to 0. This operation is irreversible. After the

bit is programmed, it cannot be erased, the device remains permanently in password

protection mode, and the 64-bit password can be neither retrieved nor reprogrammed.

In addition, all commands to the address where the password is stored are disabled.

Note: There is no means to verify the password after password protection mode is ena-

bled. If the password is lost after enabling the password protection mode, there is no

way to clear the nonvolatile protection bit lock bit.

Password Access

Password access is a security enhancement that protects information stored in the main

array blocks by preventing content alteration or reads until a valid 64-bit password is

received. Password access may be combined with nonvolatile and/or volatile protection

to create a multi-tiered solution. Contact your Micron sales representative for further

details.

Figure 12: Software Protection Scheme

1 = unprotected (default)

0 = protected

1 = unprotected

0 = protected

(Default setting depends on the product order option)

Volatile protection bit Nonvolatile protection bit

1 = unlocked (default, after power-up or hardware reset)

0 = locked

Nonvolatile protection bit lock bit (volatile)

Nonvolatile protection

mode

Password protection

mode

Volatile

protection

Nonvolatile

protection

Array block

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Device Protection

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Notes: 1. Volatile protection bits are programmed and cleared individually. Nonvolatile protection

bits are programmed individually and cleared collectively.

2. Once programmed to 0, the nonvolatile protection bit lock bit can be reset to 1 only by

taking the device through a power-up or hardware reset.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Device Protection

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Common Flash Interface

The common Flash interface (CFI) is a JEDEC-approved, standardized data structure

that can be read from the Flash memory device. It allows a system's software to query

the device to determine various electrical and timing parameters, density information,

and functions supported by the memory. The system can interface easily with the de-

vice, enabling the software to upgrade itself when necessary.

When the READ CFI command is issued, the device enters CFI query mode and the data

structure is read from memory. The following tables show the addresses (A-1, A[7:0])

used to retrieve the data. The query data is always presented on the lowest order data

outputs (DQ[7:0]), and the other data outputs (DQ[15:8]) are set to 0.

Table 17: Query Structure Overview

Note 1 applies to the entire table

Address

Subsection Name Descriptionx16 x8

10h 20h CFI query identification string Command set ID and algorithm data offset

1Bh 36h System interface information Device timing and voltage information

27h 4Eh Device geometry definition Flash device layout

40h 80h Primary algorithm-specific extended query table Additional information specific to the primary al-

gorithm (optional)

Note: 1. Query data are always presented on the lowest order data outputs (DQ[7:0]). DQ[15:8]

are set to 0.

Table 18: CFI Query Identification String

Note 1 applies to the entire table

Address

Data Description Valuex16 x8

10h 20h 0051h Query unique ASCII string "QRY" "Q"

11h 22h 0052h "R"

12h 24h 0059h "Y"

13h

14h

26h

28h

0002h

0000h

Primary algorithm command set and control interface ID code 16-bit ID

code defining a specific algorithm

–

15h

16h

2Ah

2Ch

0040h

0000h

Address for primary algorithm extended query table (see the Primary Algo-

rithm-Specific Extended Query Table)

P = 40h

17h

18h

2Eh

30h

0000h

Alternate vendor command set and control interface ID code second ven-

dor-specified algorithm supported

–

19h

1Ah

32h

34h

0000h

Address for alternate algorithm extended query table –

Note: 1. Query data are always presented on the lowest order data outputs (DQ[7:0]). DQ[15:8]

are set to 0.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Common Flash Interface

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Table 19: CFI Query System Interface Information

Note 1 applies to the entire table

Address

Data Description Valuex16 x8

1Bh 36h 0027h VCC logic supply minimum program/erase voltage

Bits[7:4] BCD value in volts

Bits[3:0] BCD value in 100mV

2.7V

1Ch 38h 0036h VCC logic supply maximum program/erase voltage

Bits[7:4] BCD value in volts

Bits[3:0] BCD value in 100mV

3.6V

1Dh 3Ah 00B5h VPPH (programming) supply minimum program/erase voltage

Bits[7:4] hex value in volts

Bits[3:0] BCD value in 100mV

11.5V

1Eh 3Ch 00C5h VPPH (programming) supply maximum program/erase voltage

Bits[7:4] hex value in volts

Bits[3:0] BCD value in 10mV

12.5V

1Fh 3Eh 0009h Typical timeout for single byte/word program = 2nμs 512µs

20h 40h 000Ah Typical timeout for maximum size buffer program = 2nμs 1024µs

21h 42h 000Ah Typical timeout per individual block erase = 2nms 1s

22h 44h 0012h Typical timeout for full chip erase = 2nms 256Mb: 262s

0013h 512Mb: 524s

0014h 1Gb: 1048s

0015h 2Gb: 2097s

23h 46h 0001h Maximum timeout for byte/word program = 2n times typical 1024µs

24h 48h 0002h Maximum timeout for buffer program = 2n times typical 4096µs

25h 4Ah 0002h Maximum timeout per individual block erase = 2n times typical 4s

26h 4Ch 0002h Maximum timeout for chip erase = 2n times typical 256Mb: 1048s

0002h 512Mb: 2096s

0002h 1Gb: 4194s

0002h 2Gb: 8388s

Note: 1. The values in this table are valid for both packages.

Table 20: Device Geometry Definition

Address

Data Description Valuex16 x8

27h 4Eh 0019h Device size = 2n in number of bytes 32MB

001Ah 64MB

001Bh 128MB

001Ch 256MB

28h

29h

50h

52h

0002h

0000h

Flash device interface code description x8, x16

asynchronous

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Common Flash Interface

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Table 20: Device Geometry Definition (Continued)

Address

Data Description Valuex16 x8

2Ah

2Bh

54h

56h

000Ah

0000h

Maximum number of bytes in multi-byte program or page =

10241

2Ch 58h 0001h Number of erase block regions. It specifies the number of

regions containing contiguous erase blocks of the same size.

2Dh

2Eh

5Ah

5Ch

00FFh

0000h

Erase block region 1 information

Number of identical-size erase blocks = 00FFh + 1 / 01FFh +

1 / 03FFh + 1 / 07FFh + 1

256

00FFh

0001h

512

00FFh

0003h

1024

00FFh

0007h

2048

2Fh

30h

5Eh

60h

0000h

0002h

Erase block region 1 information

Block size in region 1 = 0200h × 256 bytes

128KB

31h

32h

33h

34h

62h

64h

66h

68h

0000h

Erase block region 2 information 0

35h

36h

37h

38h

6Ah

6Ch

6Eh

70h

0000h

Erase block region 3 information 0

39h

3Ah

3Bh

3Ch

72h

74h

76h

78h

0000h

Erase block region 4 information 0

Note: 1. For x16/x8 mode, the maximum buffer size is 1024/256 bytes, respectively.

Table 21: Primary Algorithm-Specific Extended Query Table

Note 1 applies to the entire table

Address

Data Description Valuex16 x8

40h 80h 0050h Primary algorithm extended query table unique ASCII string “PRI” "P"

41h 82h 0052h "R"

42h 84h 0049h "I"

43h 86h 0031h Major version number, ASCII "1"

44h 88h 0033h Minor version number, ASCII "3"

45h 8Ah 0018h Address sensitive unlock (bits[1:0]):

00 = Required

01 = Not required

Silicon revision number (bits[7:2])

Required

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Common Flash Interface

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Table 21: Primary Algorithm-Specific Extended Query Table (Continued)

Note 1 applies to the entire table

Address

Data Description Valuex16 x8

46h 8Ch 0002h Erase suspend:

00 = Not supported

01 = Read only

02 = Read and write

47h 8Eh 0001h Block protection:

00 = Not supported

x = Number of blocks per group

48h 90h 0000h Temporary block unprotect:

00 = Not supported

01 = Supported

Not supported

49h 92h 0008h Block protect/unprotect:

08 = M29EWH/M29EWL

4Ah 94h 0000h Simultaneous operations:

Not supported

–

4Bh 96h 0000h Burst mode:

00 = Not supported

01 = Supported

Not supported

4Ch 98h 0003h Page mode:

00 = Not supported

01 = 8-word page

02 = 8-word page

03 = 16-word page

16-word page

4Dh 9Ah 00B5h VPPH supply minimum program/erase voltage:

Bits[7:4] hex value in volts

Bits[3:0] BCD value in 100mV

11.5V

4Eh 9Ch 00C5h VPPH supply maximum program/erase voltage:

Bits[7:4] hex value in volts

Bits[3:0] BCD value in 100mV

12.5V

4Fh 9Eh 00xxh Top/bottom boot block flag:

xx = 04h: Uniform device, HW protection for lowest block

xx = 05h: Uniform device, HW protection for highest block

Uniform +

VPP/WP# protect-

ing highest or

lowest block

50h A0h 0001h Program suspend:

00 = Not supported

01 = Supported

Supported

Note: 1. The values in this table are valid for both packages.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Common Flash Interface

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Power-Up and Reset Characteristics

Table 22: Power-Up Specifications

Parameter

Symbol

Min Unit NotesLegacy JEDEC

VCC HIGH to VCCQ HIGH – tVCHVCQH 0 µs 1

VCC HIGH to rising edge of RST# tVCS tVCHPH 300 µs 2

VCCQ HIGH to rising edge of RST# tVIOS tVCQHPH 0 µs 2

RST# HIGH to chip enable LOW tRH tPHEL 50 ns

RST# HIGH to write enable LOW – tPHWL 150 ns

Notes: 1. VCC and VCCQ ramps must be synchronized during power-up.

2. If RST# is not stable for tVCS or tVIOS, the device will not allow any READ or WRITE oper-

ations, and a hardware reset is required.

Figure 13: Power-Up Timing

tRH

tVIOS

tVCS

tPHWL

tVCHVCQH

VCCQ

VCC

CE#

RST#

WE#

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Power-Up and Reset Characteristics

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Table 23: Reset AC Specifications

Condition/Parameter

Symbol

Min Max Unit NotesLegacy JEDEC

RST# LOW to read mode during program or

erase

tREADY tPLRH – 32 µs 1

RST# pulse width tRP tPLPH 100 – ns

RST# HIGH to CE# LOW, OE# LOW tRH tPHEL, tPHGL 50 – ns 1

RST# LOW to standby mode during read mode tRPD – 10 – µs

RST# LOW to standby mode during program or

erase

50 – µs

RY/BY# HIGH to CE# LOW, OE# LOW tRB tRHEL, tRHGL 0 – ns 1

Note: 1. Sampled only; not 100% tested.

Figure 14: Reset AC Timing – No PROGRAM/ERASE Operation in Progress

tRH

RY/BY#

CE#, OE#

RST#

tRP

Figure 15: Reset AC Timing During PROGRAM/ERASE Operation

tRB

RY/BY#

CE#, OE#

RST#

tRP

tRH

tREADY

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Power-Up and Reset Characteristics

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Absolute Ratings and Operating Conditions

Stresses greater than those listed may cause permanent damage to the device. This is a

stress rating only, and functional operation of the device at these or any other condi-

tions outside those indicated in the operational sections of this specification is not im-

plied. Exposure to absolute maximum rating conditions for extended periods may ad-

versely affect reliability.

Table 24: Absolute Maximum/Minimum Ratings

Parameter Symbol Min Max Unit Notes

Temperature under bias TBIAS –50 125 °C

Storage temperature TSTG –65 150 °C

Input/output voltage VIO –0.6 VCC + 0.6 V 1, 2

Supply voltage VCC –0.6 4 V

Input/output supply voltage VCCQ –0.6 4 V

Program voltage VPPH –0.6 14.5 V 3

Notes: 1. During signal transitions, minimum voltage may undershoot to −2V for periods less than

20ns.

2. During signal transitions, maximum voltage may overshoot to VCC + 2V for periods less

than 20ns.

3. VPPH must not remain at 12V for more than 80 hours cumulative.

Table 25: Operating Conditions

Parameter Symbol Min Max Unit

Supply voltage VCC 2.7 3.6 V

Input/output supply voltage (VCCQ ≤ VCC) VCCQ 1.65 3.6 V

Program voltage VPP –2.0 12.5 V

Ambient operating temperature TA–40 85 °C

Load capacitance CL30 pF

Input rise and fall times – – 10 ns

Input pulse voltages – 0 to VCCQ V

Input and output timing reference voltages – VCCQ/2 V

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Absolute Ratings and Operating Conditions

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Figure 16: AC Measurement Load Circuit

VCCQ

25kΩ

Device

under

test

0.1µF

VCC

25kΩ

Note: 1. CL includes jig capacitance.

Figure 17: AC Measurement I/O Waveform

VCCQ

VCCQ/2

Table 26: Input/Output Capacitance

Parameter Symbol Test Condition Min Max Unit

Input capacitance for 256Mb and 512Mb CIN VIN = 0V 3 8 pF

Input capacitance for 1Gb 4 9 pF

Input capacitance for 2Gb 8 18 pF

Output capacitance COUT VOUT = 0V 3 6 pF

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Absolute Ratings and Operating Conditions

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DC Characteristics

Table 27: DC Current Characteristics

Parameter Symbol Conditions Min Typ Max Unit Notes

Input leakage current ILI 0V ≤ VIN ≤ VCC – – ±1 µA 1

Output leakage current ILO 0V ≤ VOUT ≤ VCC – – ±1 µA

VCC read

current

Random read ICC1 CE# = VIL, OE# = VIH,

f = 5 MHz

– 26 31 mA

Page read CE# = VIL, OE# = VIH,

f = 13 MHz

– 12 16 mA

VCC standby

current

256Mb ICC2 CE# = VCCQ ±0.2V,

RST# = VCCQ ±0.2V

– 65 210 µA

512Mb – 70 225 µA

1Gb – 75 240 µA

2Gb – 150 480 µA

VCC program/erase/blank

check current

ICC3 Program/

erase

controller

active

VPP/WP# = VIL

or VIH

– 35 50 mA 2

VPP/WP# =

VPPH

– 35 50 mA

VPP current Read IPP1 VPP/WP# ≤ VCC – 0.2 5 µA

Standby – 2 15 µA

Reset IPP2 RST# = VSS ±0.2V – 0.2 5 µA

PROGRAM operation

ongoing

IPP3 VPP/WP# = 12V ±5% – 0.05 0.10 mA

VPP/WP# = VCC – 0.05 0.10 mA

ERASE operation

ongoing

IPP4 VPP/WP# = 12V ±5% – 0.05 0.10 mA

VPP/WP# = VCC – 0.05 0.10 mA

Notes: 1. The maximum input leakage current is ±5µA on the VPP/WP# pin.

2. Sampled only; not 100% tested.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

DC Characteristics

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Table 28: DC Voltage Characteristics

Parameter Symbol Conditions Min Typ Max Unit Notes

Input LOW voltage VIL VCC ≥ 2.7V –0.5 – 0.8 V

Input HIGH voltage VIH VCC ≥ 2.7V 0.7VCCQ – VCCQ + 0.4 V

Output LOW voltage VOL IOL = 100µA,

VCC = VCC,min,

VCCQ = VCCQ,min

– – 0.15VCCQ V

Output HIGH voltage VOH IOH = 100µA,

VCC = VCC,min,

VCCQ = VCCQ,min

0.85VCCQ – – V

Voltage for VPP/WP# program

acceleration

VPPH – 11.5 – 12.5 V

Program/erase lockout supply

voltage

VLKO – 2.3 – – V 1

Note: 1. Sampled only; not 100% tested.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

DC Characteristics

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Read AC Characteristics

Table 29: Read AC Characteristics

Parameter

Symbol

Condition Package Min Max Unit NotesLegacy JEDEC

Address valid to next address valid tRC tAVAV CE# = VIL,

OE# = VIL

Fortified BGA 100 – ns

TSOP 110 – ns

Address valid to output valid tACC tAVQV CE# = VIL,

OE# = VIL

Fortified BGA – 100 ns

TSOP – 110 ns

Address valid to output valid

(page)

tPAGE tAVQV1 CE# = VIL,

OE# = VIL

Fortified BGA – 25 ns

TSOP – 25 ns

CE# LOW to output transition tLZ tELQX OE# = VIL Fortified BGA 0 – ns 1

TSOP 0 – ns 1

CE# LOW to output valid tEtELQV OE# = VIL Fortified BGA – 100 ns

TSOP – 110 ns

OE# LOW to output transition tOLZ tGLQX CE# = VIL Fortified BGA 0 – ns 1

TSOP 0 – ns 1

OE# LOW to output valid tOE tGLQV CE# = VIL Fortified BGA – 25 ns

TSOP – 25 ns

CE# HIGH to output High-Z tHZ tEHQZ OE# = VIL Fortified BGA – 20 ns 1

TSOP – 20 ns 1

OE# HIGH to output High-Z tDF tGHQZ CE# = VIL Fortified BGA – 15 ns 1

TSOP – 15 ns 1

CE#, OE#, or address transition to

output transition

tOH tEHQX,

tGHQX,

tAXQX

– Fortified BGA 0 – ns

TSOP 0 – ns

CE# to BYTE# LOW tELFL tELBL – Fortified BGA – 10 ns

TSOP – 10 ns

CE# to BYTE# HIGH tELFH tELBH – Fortified BGA – 10 ns

TSOP – 10 ns

BYTE# LOW to output valid tFLQV tBLQV – Fortified BGA – 1 µs

TSOP – 1 µs

BYTE# HIGH to output valid tFHQV tBHQV – Fortified BGA – 1 µs

TSOP – 1 µs

Note: 1. Sampled only; not 100% tested.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Read AC Characteristics

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Figure 18: Random Read AC Timing (8-Bit Mode)

Valid

tACC

tRC

tOH

tELFL

tLZ

tOH

tHZ

tOLZ tOH

tOE tDF

A[MAX:0]/A-1

CE#

OE#

DQ[7:0]

BYTE#

Figure 19: Random Read AC Timing (16-Bit Mode)

Valid

tACC

tRC

tOH

tELFH

tLZ

tOH

tHZ

tOLZ tOH

tOE tDF

A[MAX:0]

CE#

OE#

DQ[15:0]

BYTE#

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Read AC Characteristics

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Figure 20: BYTE# Transition Read AC Timing

Data-out

Valid

tACC tOH

tFHQV

tBLQX

High-Z

A[MAX:0]

A–1

BYTE#

DQ[7:0]

DQ[15:8]

Figure 21: Page Read AC Timing (16-Bit Mode)

Valid

Valid Valid Valid ValidValid Valid Valid

tACC

tPAGE

tOH

tHZ

tOH

tOE

tDF

A[MAX:4]

A[3:0]

CE#

OE#

DQ[15:0] Valid Valid Valid Valid Valid Valid Valid

Note: 1. Page size is 16 words (32 bytes) and is addressed by address inputs A[3:0] in x16 bus

mode and A[3:0] plus DQ15/A−1 in x8 bus mode.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Read AC Characteristics

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Write AC Characteristics

Table 30: WE#-Controlled Write AC Characteristics

Parameter Symbol Package Min Typ Max Unit Notes

Legacy JEDEC

Address valid to next address valid tWC tAVAV Fortified BGA 100 – – ns

TSOP 110 – – ns

CE# LOW to WE# LOW tCS tELWL Fortified BGA 0 – – ns

TSOP 0 – – ns

WE# LOW to WE# HIGH tWP tWLWH Fortified BGA 35 – – ns

TSOP 35 – – ns

Input valid to WE# HIGH tDS tDVWH Fortified BGA 30 – – ns 1

TSOP 30 – – ns 1

WE# HIGH to input transition tDH tWHDX Fortified BGA 0 – – ns

TSOP 0 – – ns

WE# HIGH to CE# HIGH tCH tWHEH Fortified BGA 0 – – ns

TSOP 0 – – ns

WE# HIGH to WE# LOW tWPH tWHWL Fortified BGA 20 – – ns

TSOP 20 – – ns

Address valid to WE# LOW tAS tAVWL Fortified BGA 0 – – ns

TSOP 0 – – ns

WE# LOW to address transition tAH tWLAX Fortified BGA 45 – – ns

TSOP 45 – – ns

OE# HIGH to WE# LOW – tGHWL Fortified BGA 0 – – ns

TSOP 0 – – ns

WE# HIGH to OE# LOW tOEH tWHGL Fortified BGA 0 – – ns

TSOP 0 – – ns

Program/erase valid to RY/BY# LOW tBUSY tWHRL Fortified BGA – – 30 ns 2

TSOP – – 30 ns 2

VCC HIGH to CE# LOW tVCS tVCHEL Fortified BGA 300 – – µs

TSOP 300 – – µs

WRITE TO BUFFER PROGRAM opera-

tion (512 words)

tWHWH1 tWHWH1 Fortified BGA – 900 – µs

TSOP – 900 – µs

PROGRAM operation (single word or

byte)

Fortified BGA – 210 – µs

TSOP – 210 – µs

Notes: 1. The user's write timing must comply with this specification. Any violation of this write

timing specification may result in permanent damage to the NOR Flash device.

2. Sampled only; not 100% tested.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

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Figure 22: WE#-Controlled Program AC Timing (8-Bit Mode)

AAAh PA PA

3rd Cycle 4th Cycle READ CycleData Polling

tWC tWC

tAS

tWP

tDS

tWHWH1 tDF

tWPH

tAH

tCS

tGHWL tOE

tDH

tOH

tCH

A[MAX:0]/A-1

CE#

OE#

WE#

DQ[7:0] AOh PD DQ7# DOUT DOUT

Notes: 1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-

GRAM command is followed by checking of the status register data polling bit and by a

READ operation that outputs the data (DOUT) programmed by the previous PROGRAM

command.

2. PA is the address of the memory location to be programmed. PD is the data to be pro-

grammed.

3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit

[DQ7]).

4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled

Write AC Characteristics, and CE#-Controlled Write AC Characteristics.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

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Figure 23: WE#-Controlled Program AC Timing (16-Bit Mode)

555h PA PA

3rd Cycle 4th Cycle READ CycleData Polling

tWC tWC

tAS

tWP

tDS

tDF

tWHWH1

tWPH

tAH

tCS

tGHWL tOE

tDH

tOH

tCH

A[MAX:0]

CE#

OE#

WE#

DQ[15:0] AOh PD DQ7# DOUT DOUT

Notes: 1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-

GRAM command is followed by checking of the status register data polling bit and by a

READ operation that outputs the data (DOUT) programmed by the previous PROGRAM

command.

2. PA is the address of the memory location to be programmed. PD is the data to be pro-

grammed.

3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit

[DQ7]).

4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled

Write AC Characteristics, and CE#-Controlled Write AC Characteristics.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

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Table 31: CE#-Controlled Write AC Characteristics

Parameter Symbol Package Min Typ Max Unit Notes

Legacy JEDEC

Address valid to next address valid tWC tAVAV Fortified BGA 100 – – ns

TSOP 110 – – ns

WE# LOW to CE# LOW tWS tWLEL Fortified BGA 0 – – ns

TSOP 0 – – ns

CE# LOW to CE# HIGH tCP tELEH Fortified BGA 35 – – ns

TSOP 35 – – ns

Input valid to CE# HIGH tDS tDVEH Fortified BGA 30 – – ns 1

TSOP 30 – – ns 1

CE# HIGH to input transition tDH tEHDX Fortified BGA 0 – – ns

TSOP 0 – – ns

CE# HIGH to WE# HIGH tWH tEHWH Fortified BGA 0 – – ns

TSOP 0 – – ns

CE# HIGH to CE# LOW tCPH tEHEL Fortified BGA 20 – – ns

TSOP 20 – – ns

Address valid to CE# LOW tAS tAVEL Fortified BGA 0 – – ns

TSOP 0 – – ns

CE# LOW to address transition tAH tELAX Fortified BGA 45 – – ns

TSOP 45 – – ns

OE# HIGH to CE# LOW – tGHEL Fortified BGA 0 – – ns

TSOP 0 – – ns

WRITE TO BUFFER PROGRAM opera-

tion (512 words)

tWHWH1 tWHWH1 Fortified BGA – 900 – µs

TSOP – 900 – µs

PROGRAM operation (single word or

byte)

Fortified BGA – 210 – µs

TSOP – 210 – µs

Note: 1. The user's write timing must comply with this specification. Any violation of this write

timing specification may result in permanent damage to the NOR Flash device.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

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Figure 24: CE#-Controlled Program AC Timing (8-Bit Mode)

AAAh PA PA

3rd Cycle 4th Cycle Data Polling

tWC

tAS

tCP

tDS

tWHWH1

tCPH

tAH

tWS

tGHEL

tDH

tWH

A[MAX:0]/A-1

WE#

OE#

CE#

DQ[7:0] AOh PD DQ7# DOUT

Notes: 1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-

GRAM command is followed by checking of the status register data polling bit.

2. PA is the address of the memory location to be programmed. PD is the data to be pro-

grammed.

3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit

[DQ7]).

4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled

Write AC Characteristics, and CE#-Controlled Write AC Characteristics.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

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Figure 25: CE#-Controlled Program AC Timing (16-Bit Mode)

555h PA PA

3rd Cycle 4th Cycle Data Polling

tWC

tAS

tCP

tDS

tWHWH1

tCPH

tAH

tWS

tGHEL

tDH

tWH

A[MAX:0]

WE#

OE#

CE#

DQ[15:0] AOh PD DQ7# DOUT

Notes: 1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-

GRAM command is followed by checking of the status register data polling bit.

2. PA is the address of the memory location to be programmed. PD is the data to be pro-

grammed.

3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit

[DQ7]).

4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled

Write AC Characteristics, and CE#-Controlled Write AC Characteristics.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

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Figure 26: Chip/Block Erase AC Timing (8-Bit Mode)

AAAh

tWC

tAS

tWP

tDS

tWPH

tAH

tCS

tGHWL

tDH

tCH

A[MAX:0]/

A–1

CE#

OE#

WE#

DQ[7:0] AAh

555h AAAh AAAh

BAh1

555hAAAh

55h 55hAAh80h 10h/

30h

Notes: 1. For a CHIP ERASE command, the address is 555h, and the data is 10h; for a BLOCK ERASE

command, the address is BAd, and the data is 30h.

2. BAd is the block address.

3. See the following tables for timing details: Read AC Characteristics, WE#-Controlled

Write AC Characteristics, and CE#-Controlled Write AC Characteristics.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

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Accelerated Program, Data Polling/Toggle AC Characteristics

Table 32: Accelerated Program and Data Polling/Data Toggle AC Characteristics

Parameter

Symbol

Min Max UnitLegacy JEDEC

VPP/WP# rising or falling time – tVHVPP 250 – ns

Address setup time to OE# LOW during toggle bit polling tASO tAXGL 15 – ns

Address hold time from OE# during toggle bit polling tAHT tGHAX, tEHAX 0 – ns

CE# HIGH during toggle bit polling tEPH tEHEL2 30 – ns

Output hold time during data and toggle bit polling tOEH tWHGL2,

tGHGL2

20 – ns

Program/erase valid to RY/BY# LOW tBUSY tWHRL – 90 ns

Note: 1. Sampled only; not 100% tested.

Figure 27: Accelerated Program AC Timing

tVHVPP

VPPH

VIL or VIH

VPP/WP#

Figure 28: Data Polling AC Timing

DQ7#Data DQ7# Valid DQ7

Data

Output flagData Output flag

Valid

DQ[6:0] Data

tHZ/tDF

tOE

tCH

tBUSY

tOEH

CE#

OE#

WE#

DQ[6:0]

DQ7

RY/BY#

Notes: 1. DQ7 returns a valid data bit when the PROGRAM or ERASE command has completed.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Accelerated Program, Data Polling/Toggle AC Characteristics

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2. See the following tables for timing details: Read AC Characteristics, Accelerated Pro-

gram and Data Polling/Data Toggle AC Characteristics.

Figure 29: Toggle/Alternative Toggle Bit Polling AC Timing (8-Bit Mode)

Toggle Toggle ToggleData

Stop

toggling

Output

Valid

tBUSY

tOEH tEPH

tOEH

CE#

WE#

OE#

DQ6/DQ2

RY/BY#

tOEH

tAHT tASO

tAHT

tDH

tAS

A[MAX:0]/

A–1

tOE tE

Notes: 1. DQ6 stops toggling when the PROGRAM or ERASE command has completed. DQ2 stops

toggling when the CHIP ERASE or BLOCK ERASE command has completed.

2. See the following tables for timing details: Read AC Characteristics, Accelerated Pro-

gram and Data Polling/Data Toggle AC Characteristics.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Accelerated Program, Data Polling/Toggle AC Characteristics

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Program/Erase Characteristics

Table 33: Program/Erase Characteristics

Notes 1 and 2 apply to the entire table.

Parameter

Buffer

Size Byte Word Min Typ Max Unit Notes

Block erase (128KB) – – – – 0.8 4 s

Erase suspend latency time – – – – 27 32 µs

Block erase timeout – – – 50 – – µs

Byte program Single-byte program – – – – 210 456 µs

Byte write to buffer program 64 64 – – 270 716 µs

128 128 – – 310 900 µs

256 256 – – 375 1140 µs

Effective write to buffer

program per byte

64 1 – – 4.22 11.2 µs

128 1 – – 2.42 7 µs

256 1 – – 1.46 4.45 µs

Word program Single-word program – – – – 210 456 µs

Word write to buffer program 32 – 32 – 270 716 µs

64 – 64 – 310 900 µs

128 – 128 – 375 1140 µs

256 – 256 – 505 1690 µs

512 – 512 – 900 3016 µs

Effective write to buffer

program per word

32 – 1 – 8.44 22.4 µs

64 – 1 – 4.84 14.1 µs

128 – 1 – 2.93 8.9 µs

256 – 1 – 1.97 6.6 µs

512 – 1 – 1.76 5.89 µs

Program suspend latency time – – – – 27 32 µs

Blank check – – – – 3.2 – ms

PROGRAM/ERASE cycles (per block) – – – 100,000 – – cycles

Erase to suspend – – – – 500 – µs 3

Notes: 1. Typical values measured at room temperature and nominal voltages.

2. Typical and maximum values are sampled, but not 100% tested.

3. Erase to suspend is the typical time between an initial BLOCK ERASE or ERASE RESUME

command and a subsequent ERASE SUSPEND command. Violating the specification re-

peatedly during any particular block erase may cause erase failures.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Program/Erase Characteristics

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Package Dimensions

Figure 30: 56-Pin TSOP – 14mm x 20mm

See Detail A

0.50 TYP

14.00 ±0.10

1.20 MAX

18.40 ±0.10

20.00 ±0.20

1.00 ±0.05

0.22 ± 0.05

Detail A

0.50 ±0.10

3 TYP/

5 MAX

0.10+0.10

-0.05

0.10

0.10 MIN/

0.21 MAX

Pin #1

Notes: 1. All dimensions are in millimeters.

2. For the lead width value of 0.22 ±0.05, there is also a legacy value of 0.15 ±0.05.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Package Dimensions

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Figure 31: 64-Ball Fortified BGA – 11mm x 13mm

Seating

plane

0.80 TYP

0.10

13.00 ±0.10

0.60 ±0.05

1.00

TYP

3.00

TYP

7.00 TYP

1.40 MAX

Ball A1 ID

1.00

TYP

2.00 TYP 0.49 TYP/

0.40 MIN

11.00 ±0.10

7.00 TYP

64X

87654321

Note: 1. All dimensions are in millimeters.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Package Dimensions

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Additional Resources

Table 34: Technical Notes

Visit www.micron.com to access the following documents.

Title

Reference

Number

Password Protecting Flash Memory Blocks TN-12-05

Software Driver for M29EW NOR Flash Memory TN-13-12

Patching the Linux Kernel and U-Boot for Micron® M29 Flash Memory TN-13-07

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Additional Resources

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Revision History

Rev. B – 08/12

• Added Table 3: Part Numbers with Security Features by Density, Medium, and Pack-

age

• Updated Table 8: Operations and Corresponding Bit Settings

Rev. A – 04/12

• Initial Micron brand release

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

www.micron.com/productsupport Customer Comment Line: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Revision History

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