IRFD210 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET * 0.6A, 200V * rDS(ON) = 1.500 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Formerly developmental type TA17442. Ordering Information IRFD210 PACKAGE HEXDIP 2316.3 Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. PART NUMBER File Number Symbol BRAND D IRFD210 NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE 4-281 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRFD210 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFD210 200 200 0.6 2.5 20 1.0 0.008 30 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V (Figure 9) 200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 A VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 250 A Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage IDSS ID(ON) IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 0.6 - - A VGS = 20V - - 100 nA ID = 0.3A, VGS = 10V (Figures 7, 8) - 1.0 1.500 0.5 0.8 - S - 8.0 15 ns - 15 25 ns - 10 15 ns - 8.0 15 ns VGS = 10V, ID 0.6A, VDS = 0.8 x Rated BVDSS Ig(REF) = 1.5mA (Figure 13) Gate Charge is Essentially Independent of Operating Temperature - 5.0 7.5 nC - 2.0 - nC - 3.0 - nC VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) - 135 - pF VDS > ID(ON) x rDS(ON)MAX, ID = 0.3A (Figure 11) VDD = 0.5 x Rated BVDSS, ID 0.6A, RL = 9.1 RL = 165 for BVDSS = 200V MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs Gate to Drain "Miller" Charge Qgd Input Capacitance CISS Output Capacitance COSS - 60 - pF Reverse Transfer Capacitance CRSS - 16 - pF - 4.0 - nH - 6.0 - nH - - 120 oC/W Internal Drain Inductance LD Measured From the Drain Lead, 2mm (0.08in) from Package to Center of Die Internal Source Inductance LS Measured From the Source Lead, 2mm (0.08in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S Thermal Resistance Junction to Ambient 4-282 RJA Free Air Operation IRFD210 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current ISDM TEST CONDITIONS MIN TYP MAX UNITS - - 0.6 A - - 2.5 A TJ = 25oC, ISD = 0.6A, VGS = 0V (Figure 12) - - 2.0 V TJ = 150oC, ISD = 0.6A, dISD/dt = 100A/s TJ = 150oC, ISD = 0.6A, dISD/dt = 100A/s - 290 - ns - 2.0 - C Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time trr Reverse Recovery Charge QRR NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. VDD = 20V, starting TJ = 25oC, L = 112.7H, RG = 50, peak IAS = 2.2A. Unless Otherwise Specified 1.2 0.6 1.0 0.5 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 0.4 0.3 0.2 0.1 0 0 0 25 125 50 75 100 TA , AMBIENT TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE 25 50 75 100 125 TA , AMBIENT TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE 5 VGS = 10V VGS = 9V VGS = 8V 10s ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1 100s 1ms 10ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 100ms 0.01 DC TJ = MAX RATED TC = 25oC SINGLE PULSE 0.001 1 4 VGS = 7V 3 VGS = 6V 2 1 VGS = 5V VGS = 4V 0 10 100 1000 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 4-283 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. OUTPUT CHARACTERISTICS 50 IRFD210 5 PULSE DURATION = 80s 80s PULSE TEST DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 9V VGS = 8V 4 ID, DRAIN CURRENT (A) Unless Otherwise Specified (Continued) IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 3 VGS = 7V VGS = 6V 2 1 VGS = 5V VGS = 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 5 V DS > ID(ON) x rDS(ON)MAX PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 4 TJ = 25oC 3 TJ = 125oC 2 1 0 0 2 6 8 10 FIGURE 6. TRANSFER CHARACTERISTICS 4 NORMALIZED ON RESISTANCE 2s PULSE TEST rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 4 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. SATURATION CHARACTERISTICS 3 VGS = 10V 2 VGS = 20V 1 0 TJ = -55oC PULSE DURATION = 80s 2.2 DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 0.3A 1.8 1.4 1.0 0.6 0.2 0 6 4 ID, DRAIN CURRENT (A) 2 -40 10 8 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2s pulse is minimal. FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 400 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.05 0.95 0.85 300 200 CISS COSS 100 CRSS 0.75 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-284 0 0 10 40 30 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE IRFD210 Typical Performance Curves 10.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) 4.0 Unless Otherwise Specified (Continued) 3.2 2.4 TJ = -55oC TJ = 25oC 1.6 TJ = 125oC 0.8 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 5 TJ = 150oC TJ = 25oC 2 1.0 5 2 0.1 0 0 1 2 3 4 5 2 1 3 4 VSD, SOURCE TO DRAIN VOLTAGE (V) 0 ID , DRAIN CURRENT (A) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 5 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE VGS, GATE TO SOURCE VOLTAGE (V) 20 ID = 2.5A VDS = 40V 15 VDS = 100V VDS = 160V 10 5 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS tP + RG - VGS VDS IAS VDD VDD DUT 0V tP IAS 0 0.01 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT 4-285 FIGURE 15. UNCLAMPED ENERGY WAVEFORMS IRFD210 Test Circuits and Waveforms (Continued) tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 FIGURE 16. SWITCHING TIME TEST CIRCUIT 0.2F 50% PULSE WIDTH 10% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 18. GATE CHARGE TEST CIRCUIT Ig(REF) 0 FIGURE 19. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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