WJA1500 +5 V Active-Bias InGaP HBT Gain Block Applications IF Amplifier VHF/UHF Transmission Wireless Infrastructure CATV / SATV / MoCA General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram GND 50 Ohm Cascadable Gain Block 50-1000 MHz 19.5 dB Gain at 200 MHz +20.5 dBm P1dB at 200 MHz +43.5 dBm Output IP3 at 200 MHz +60 dBm Output IP2 at 200 MHz Single +5 V Supply, 95 mA Current Robust 1000V ESD, Class 1C SOT-89 Package 4 1 2 3 RF IN GND RF OUT General Description Pin Configuration The WJA1500 is a cascadable gain block that offers high linearity in a low-cost surface-mount package. At 200 MHz, the WJA1500 typically provides 19.5 dB gain, +43.5 dBm OIP3, and +20.5 dBm P1dB. The device is housed in a RoHS-compliant SOT-89 industry-standard SMT package using a NiPdAu plating to eliminate the possibility of tin whiskering. The WJA1500 consists of Darlington pair amplifiers using a high reliability InGaP/GaAs HBT process technology. The MMIC amplifier is internally matched to 50 and only requires DC-blocking capacitors and a bias inductor for operation. An internal active bias is designed to enable stable performance over temperature. A dropping bias resistor is not required allowing the device to be biased directly from +5 V supply voltage. The amplifier is targeted for high performance IF applications in existing and next generation wireless technologies. The WJA1500 is ideal for general purpose applications such as LO buffering, IF amplification and pre-driver stages within the 50 to 1000 MHz frequency range. Pin # Symbol 1 RF IN 3 2, 4 RF OUT GND Data Sheet: Rev A 2/20/12 (c) 2012 TriQuint Semiconductor, Inc. Ordering Information Part No. Description WJA1500 WJA1500-PCB InGaP HBT Gain Block 50-1000 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7" reel - 1 of 8 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network (R) WJA1500 +5 V Active-Bias InGaP HBT Gain Block Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Storage Temperature -55 to 150 C Vcc Tcase Tj (for>106 hours MTTF) +4.75 -40 RF Input Power,CW,50 ,T=25C +24 dBm Supply Voltage +6.5 V Typ Max Units +5 +5.25 +85 +150 V C C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: Vsupply=+5 V, TCASE = +25C, 50 system. Parameter Conditions Operational Frequency Range Min Typical 50 Test Frequency Max Units 1000 MHz 200 Gain 17.8 19.4 MHz 20.8 dB Input Return Loss 17 dB Output Return Loss 21 dB Output P1dB Output IP3 See Note 1. +39 Output IP2 +20.5 dBm +43.7 dBm +59.8 dBm Noise Figure 5.0 dB Device Voltage, Vcc 5.0 V 79 Device Current, Icc Thermal Resistance (jnc to case) jc 95 99 mA 78 C/W Notes: 1. OIP3 is measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. 2:1 rule gives relative value with respect to fundamental tone. Data Sheet: Rev A 2/20/12 (c) 2012 TriQuint Semiconductor, Inc. - 2 of 8 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network (R) WJA1500 +5 V Active-Bias InGaP HBT Gain Block Device Characterization Data S-Parameter Data Vsupply =+5 V, Icc = 94 mA, Tcase = +25 C, fixture measurement, calibrated to device leads Freq (MHz) 10 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 S11 (dB) -15.69 -17.40 -17.59 -17.77 -17.56 -17.54 -17.25 -17.04 -16.88 -16.50 -16.25 -16.04 -15.71 -15.45 -15.11 -14.84 -14.67 -14.45 -14.25 -14.05 -13.98 -13.75 -13.40 -13.24 -13.05 S11 (ang) -55.09 -135.23 -153.75 -158.44 -160.17 -160.17 -159.36 -156.92 -156.28 -152.39 -152.53 -151.61 -149.87 -147.51 -146.25 -144.74 -144.80 -143.29 -141.96 -141.12 -140.85 -140.40 -139.62 -138.81 -138.36 S21 (dB) 21.82 19.98 19.68 19.59 19.47 19.42 19.36 19.33 19.26 19.19 19.10 19.01 18.90 18.80 18.69 18.58 18.45 18.38 18.20 18.16 18.02 17.84 17.69 17.60 17.43 S21 (ang) 171.35 168.76 167.63 164.26 160.44 157.05 153.10 148.71 144.56 140.90 136.81 132.74 128.80 124.94 120.76 117.69 113.29 109.27 105.66 101.96 97.92 94.26 90.54 86.83 82.58 S12 (dB) -25.19 -23.20 -23.05 -22.99 -22.96 -22.91 -23.00 -22.99 -22.97 -23.01 -22.93 -23.00 -23.02 -23.01 -23.04 -23.01 -23.00 -23.05 -23.02 -23.09 -23.14 -23.06 -23.10 -23.10 -23.24 S12 (ang) 11.61 4.28 0.79 -1.17 -2.89 -4.24 -5.88 -6.83 -8.61 -9.69 -10.49 -12.61 -13.57 -14.81 -15.97 -17.76 -19.31 -19.69 -21.32 -22.91 -23.65 -24.91 -26.92 -28.23 -29.00 S22 (dB) -10.46 -18.29 -21.02 -21.22 -21.01 -20.25 -19.36 -18.55 -17.94 -16.95 -16.62 -15.94 -15.45 -14.87 -14.15 -13.71 -13.28 -12.67 -12.12 -11.61 -11.22 -10.74 -10.34 -9.89 -9.59 S22 (ang) -28.13 -60.10 -64.45 -67.20 -73.21 -76.35 -80.46 -83.44 -86.00 -90.06 -92.43 -96.08 -98.43 -101.00 -104.13 -106.18 -108.81 -111.55 -114.03 -116.73 -119.37 -121.30 -123.81 -125.85 -128.24 Device S-parameters are available for download at www.TriQuint.com Data Sheet: Rev A 2/20/12 (c) 2012 TriQuint Semiconductor, Inc. - 3 of 8 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network (R) WJA1500 +5 V Active-Bias InGaP HBT Gain Block Evaluation Board - WJA1500-PCB Vcc=+5.00V Icc = 95 mA J3 R4 J4 R4 0 C3 J1 C1 C3 Bypass Capacitor L1 U1 R1 R2 C2 J2 L1 RF Choke RF IN RF OUT WJA1500 See Evaluation Board PCB Information section for material and stack up. C1 Blocking Capacitor R1 0 R2 0 C2 Blocking Capacitor Bill of Material Reference Des. Value Description Manufacturer Part Number U1 n/a InGaP HBT Gain Block TriQuint WJA1500 L1 470 nH Ferrite core wire wound inductor, 0805(1) various C1, C2 1000 pF Cap, Chip, 0603, 50V, NPO, 5% various C3 0.018 uF Cap, Chip, 0603, 16V, X7R, 10% Coilcraft R1, R2, R4 0 Res, Chip, 0603, 1/10W, 5% various Notes: 1. For lower cost and performance (100 - 1000 MHz) option use 470 nH air core wire wound inductor. 2. R1, R2, and R4 may be replaced by copper trace in end user applications. Typical Performance - WJA1500-PCB Test conditions unless otherwise noted: Vsupply = 5 V, Icc = 94 mA, Tcase = +25 C Frequency MHz 70 170 240 500 900 dB dB 19.6 14 19.3 16 19.2 17 18.8 17 17.6 14 Output Return Loss Output P1dB dB dBm 25 +20.2 27 +20.3 22 +20.4 15 +20.4 10 +19.9 Output IP3 [1] dBm +42.1 +44.6 +43.8 +38.3 +33.4 Output IP2 dBm +63.2 +61.1 +58.0 +59.0 +52.0 dB 4.9 4.9 5.0 5.2 5.8 Gain Input Return Loss Noise Figure Notes: 1. OIP3 measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. Data Sheet: Rev A 2/20/12 (c) 2012 TriQuint Semiconductor, Inc. - 4 of 8 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network (R) WJA1500 +5 V Active-Bias InGaP HBT Gain Block Performance Plots - WJA1500-PCB Test conditions unless otherwise noted: Vsupply = 5 V, Icc = 94 mA, Tcase = +25 C Gain vs. Frequency 20 S11, S22 (dB) 16 14 12 -15 500 1000 1500 2000 3 0 200 400 600 16 14 +85C +25C -40C 40 12 35 20 200 400 600 800 1000 4.5 55 45 21 20 1000 5.1 5.2 P1dB vs. VCC 20 18 0 200 Frequency (MHz) 400 600 800 1000 4.5 4.6 4.7 4.8 Frequency (MHz) 4.9 5.0 5.1 5.2 VCC (V) Icc vs. Temperature 102 5 19 18 800 4.9 Temp=+25C f=200 MHz 19 50 600 4.8 21 +85C +25C -40C P1dB (dBm) P1dB (dBm) 60 400 4.7 22 22 65 200 4.6 VCC P1dB vs. Frequency 23 Temp=+25C Pout=+4 dBm 0 40 Frequency (MHz) OIP2 vs. Frequency 70 45 30 0 Pout (dBm) 75 1000 35 25 18 800 Pout =8 dBm/tone f=200 MHz 1 MHz Tone Spacing 50 30 16 600 OIP3 vs. VCC 55 OIP3 (dBm) OIP3 (dBm) 18 14 400 Frequency (MHz) 45 12 200 Pout =8 dBm/tone 1 MHz Tone Spacing 20 Gain (dB) 0 1000 OIP3 vs. Frequency 50 Temp=+25C f=200 MHz OIP2 (dBm) 800 Frequency (MHz) Gain vs. Pout 10 5 4 Frequency (MHz) 22 6 -20 -30 0 +85C +25C -40C 7 S11 S22 -10 -25 10 Noise Figure vs. Frequency 8 -5 +85C +25C -40C 18 Gain (dB) Return Loss vs. Frequency 0 NF (dB) 22 ICC vs. VCC 160 VCC=+5V 140 100 ICC (mA) Icc (mA) 120 98 96 100 80 +85C +25C -40C 60 94 40 92 20 -50 -25 0 25 50 75 100 Temperature (C) Data Sheet: Rev A 2/20/12 (c) 2012 TriQuint Semiconductor, Inc. 4.0 4.5 5.0 5.5 6.0 VCC (V) - 5 of 8 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network (R) WJA1500 +5 V Active-Bias InGaP HBT Gain Block Pin Description GND 4 1 2 3 RF IN GND RF OUT Pin Symbol Description 1 RF IN RF input, matched to 50 ohms. External DC Block is required. 3 RF OUT 2, 4 GND Paddle RF output / DC supply, matched to 50 ohms. External DC Block, bias choke required. Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see PCB mounting pattern in Mechanical Information section. Evaluation Board PCB Information TriQuint PCB 1069136 Material and Stack Up 1 oz. Cu top layer 0.014" Nelco N-4000-13 1 oz. Cu inner layer 0.062 0.006 Finished Board Thickness Nelco N-4000-13 r=3.7 typ. 1 oz. Cu inner layer 0.014" Nelco N-4000-13 1 oz. Cu bottom layer Data Sheet: Rev A 2/20/12 (c) 2012 TriQuint Semiconductor, Inc. - 6 of 8 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network (R) WJA1500 +5 V Active-Bias InGaP HBT Gain Block Mechanical Information Package Information and Dimensions The component will be marked on the top surface of package with an "A1500" designator and an alphanumeric lot code. A1500 Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum. 5. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. Data Sheet: Rev A 2/20/12 (c) 2012 TriQuint Semiconductor, Inc. - 7 of 8 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network (R) WJA1500 +5 V Active-Bias InGaP HBT Gain Block Product Compliance Information ESD Information Solderability Package lead plating: NiPdAu ESD Rating: Value: Test: Standard: Class 1C Passes 1000 V to < 2000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 Compatible with both lead-free (260 C max. reflow temperature) and tin/lead (245 C max. reflow temperature) soldering processes. RoHS Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). MSL Rating Moisture Sensitivity Level 3 at +260C per JEDEC standard IPC/JEDEC J-STD-020. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev A 2/20/12 (c) 2012 TriQuint Semiconductor, Inc. - 8 of 8 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network (R)