WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Data Sheet: Rev A 2/20/12
- 1 of 8 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Applications
SOT-89 Package
IF Amplifier
VHF/UHF Transmission
Wireless Infrastructure
CATV / SATV / MoCA
General Purpose Wireless
Product Features
Functional Block Diagram
50 Ohm Cascadable Gain Block
50-1000 MHz
19.5 dB Gain at 200 MHz
+20.5 dBm P1dB at 200 MHz
+43.5 dBm Output IP3 at 200 MHz
+60 dBm Output IP2 at 200 MHz
Single +5 V Supply, 95 mA Current
Robust 1000V ESD, Class 1C
SOT-89 Package
RF IN GND RF OUT
GND
1
2
3
4
General Description
Pin Configuration
The WJA1500 is a cascadable gain block that offers
high linearity in a low-cost surface-mount package. At
200 MHz, the WJA1500 typically provides 19.5 dB gain,
+43.5 dBm OIP3, and +20.5 dBm P1dB. The device is
housed in a RoHS-compliant SOT-89 industry-standard
SMT package using a NiPdAu plating to eliminate the
possibility of tin whiskering.
The WJA1500 consists of Darlington pair amplifiers
using a high reliability InGaP/GaAs HBT process
technology. The MMIC amplifier is internally matched
to 50 Ω and only requires DC-blocking capacitors and a
bias inductor for operation. An internal active bias is
designed to enable stable performance over temperature.
A dropping bias resistor is not required allowing the
device to be biased directly from +5 V supply voltage.
The amplifier is targeted for high performance IF
applications in existing and next generation wireless
technologies. The WJA1500 is ideal for general purpose
applications such as LO buffering, IF amplification and
pre-driver stages within the 50 to 1000 MHz frequency
range.
Pin #
Symbol
1
RF IN
3
RF OUT
2, 4
GND
Ordering Information
Part No.
Description
WJA1500
InGaP HBT Gain Block
WJA1500-PCB
50-1000 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Data Sheet: Rev A 2/20/12
- 2 of 8 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
-55 to 150 °C
RF Input Power,CW,50 Ω,T=25ºC
+24 dBm
Supply Voltage
+6.5 V
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Vcc
+4.75
+5
+5.25
V
Tcase
-40
+85
°C
Tj (for>106 hours MTTF)
+150
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: Vsupply=+5 V, TCASE = +25°C, 50 Ω system.
Parameter
Conditions
Min
Typical
Max
Units
Operational Frequency Range
50
1000
MHz
Test Frequency
200
MHz
Gain
17.8
19.4
20.8
dB
Input Return Loss
17
dB
Output Return Loss
21
dB
Output P1dB
+20.5
dBm
Output IP3
See Note 1.
+39
+43.7
dBm
Output IP2
+59.8
dBm
Noise Figure
5.0
dB
Device Voltage, Vcc
5.0
V
Device Current, Icc
79
95
99
mA
Thermal Resistance (jnc to case) θjc
78
°C/W
Notes:
1. OIP3 is measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the OIP3 using 2:1 rule. 2:1 rule gives relative value with respect to fundamental tone.
WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Data Sheet: Rev A 2/20/12
- 3 of 8 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Device Characterization Data
S-Parameter Data
Vsupply =+5 V, Icc = 94 mA, Tcase = +25°C, fixture measurement, calibrated to device leads
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
10
-15.69
-55.09
21.82
171.35
-25.19
11.61
-10.46
-28.13
50
-17.40
-135.23
19.98
168.76
-23.20
4.28
-18.29
-60.10
100
-17.59
-153.75
19.68
167.63
-23.05
0.79
-21.02
-64.45
150
-17.77
-158.44
19.59
164.26
-22.99
-1.17
-21.22
-67.20
200
-17.56
-160.17
19.47
160.44
-22.96
-2.89
-21.01
-73.21
250
-17.54
-160.17
19.42
157.05
-22.91
-4.24
-20.25
-76.35
300
-17.25
-159.36
19.36
153.10
-23.00
-5.88
-19.36
-80.46
350
-17.04
-156.92
19.33
148.71
-22.99
-6.83
-18.55
-83.44
400
-16.88
-156.28
19.26
144.56
-22.97
-8.61
-17.94
-86.00
450
-16.50
-152.39
19.19
140.90
-23.01
-9.69
-16.95
-90.06
500
-16.25
-152.53
19.10
136.81
-22.93
-10.49
-16.62
-92.43
550
-16.04
-151.61
19.01
132.74
-23.00
-12.61
-15.94
-96.08
600
-15.71
-149.87
18.90
128.80
-23.02
-13.57
-15.45
-98.43
650
-15.45
-147.51
18.80
124.94
-23.01
-14.81
-14.87
-101.00
700
-15.11
-146.25
18.69
120.76
-23.04
-15.97
-14.15
-104.13
750
-14.84
-144.74
18.58
117.69
-23.01
-17.76
-13.71
-106.18
800
-14.67
-144.80
18.45
113.29
-23.00
-19.31
-13.28
-108.81
850
-14.45
-143.29
18.38
109.27
-23.05
-19.69
-12.67
-111.55
900
-14.25
-141.96
18.20
105.66
-23.02
-21.32
-12.12
-114.03
950
-14.05
-141.12
18.16
101.96
-23.09
-22.91
-11.61
-116.73
1000
-13.98
-140.85
18.02
97.92
-23.14
-23.65
-11.22
-119.37
1050
-13.75
-140.40
17.84
94.26
-23.06
-24.91
-10.74
-121.30
1100
-13.40
-139.62
17.69
90.54
-23.10
-26.92
-10.34
-123.81
1150
-13.24
-138.81
17.60
86.83
-23.10
-28.23
-9.89
-125.85
1200
-13.05
-138.36
17.43
82.58
-23.24
-29.00
-9.59
-128.24
Device S-parameters are available for download at www.TriQuint.com
WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Data Sheet: Rev A 2/20/12
- 4 of 8 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Evaluation Board - WJA1500-PCB
L1
C1
U1
R1 C2
C3
R4
J3
J1 J2
J4
R2
Bill of Material
Typical Performance - WJA1500-PCB
Test conditions unless otherwise noted: Vsupply = 5 V, Icc = 94 mA, Tcase = +25°C
Notes:
1. OIP3 measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
Reference Des.
Value
Description
Manufacturer
Part Number
U1
n/a
InGaP HBT Gain Block
TriQuint
WJA1500
L1
470 nH
Ferrite core wire wound inductor, 0805(1)
various
C1, C2
1000 pF
Cap, Chip, 0603, 50V, NPO, 5%
various
C3
0.018 uF
Cap, Chip, 0603, 16V, X7R, 10%
Coilcraft
R1, R2, R4
0 Ω
Res, Chip, 0603, 1/10W, 5%
various
Frequency
MHz
70
170
240
500
900
Gain
dB
19.6
19.3
19.2
18.8
17.6
Input Return Loss
dB
14
16
17
17
14
Output Return Loss
dB
25
27
22
15
10
Output P1dB
dBm
+20.2
+20.3
+20.4
+20.4
+19.9
Output IP3 [1]
dBm
+42.1
+44.6
+43.8
+38.3
+33.4
Output IP2
dBm
+63.2
+61.1
+58.0
+59.0
+52.0
Noise Figure
dB
4.9
4.9
5.0
5.2
5.8
Notes:
1. For lower cost and performance (100 – 1000 MHz) option use 470 nH air core wire wound inductor.
2. R1, R2, and R4 may be replaced by copper trace in end user applications.
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
Bypass
Capacitor
R4
0
RF IN
C2
Blocking
Capacitor
Vcc=+5.00V
Icc = 95 mA
WJA1500
R1
0
R2
0
See Evaluation Board PCB Information
section for material and stack up.
WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Data Sheet: Rev A 2/20/12
- 5 of 8 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Performance Plots - WJA1500-PCB
Test conditions unless otherwise noted: Vsupply = 5 V, Icc = 94 mA, Tcase = +25°C
10
12
14
16
18
20
22
0500 1000 1500 2000
Gain (dB)
Frequency (MHz)
Gain vs. Frequency
+85°C
+25°C
−40°C
-30
-25
-20
-15
-10
-5
0
0200 400 600 800 1000
S11, S22 (dB)
Frequency (MHz)
Return Loss vs. Frequency
S11
S22
3
4
5
6
7
8
0200 400 600 800 1000
NF (dB)
Frequency (MHz)
Noise Figure vs. Frequency
+85°C
+25°C
−40°C
12
14
16
18
20
22
10 12 14 16 18 20
Gain (dB)
Pout (dBm)
Gain vs. Pout
Temp=+25C
f=200 MHz
25
30
35
40
45
50
0200 400 600 800 1000
OIP3 (dBm)
Frequency (MHz)
OIP3 vs. Frequency
+85°C
+25°C
−40°C
Pout =8 dBm/tone
1 MHz Tone Spacing
30
35
40
45
50
55
4.5 4.6 4.7 4.8 4.9 5 5.1 5.2
OIP3 (dBm)
VCC
OIP3 vs. VCC
Pout =8 dBm/tone
f=200 MHz
1 MHz Tone Spacing
45
50
55
60
65
70
75
0200 400 600 800 1000
OIP2 (dBm)
Frequency (MHz)
OIP2 vs. Frequency
Temp=+25C
Pout=+4 dBm
18
19
20
21
22
23
0200 400 600 800 1000
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
+85°C
+25°C
−40°C
18
19
20
21
22
4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2
P1dB (dBm)
VCC (V)
P1dB vs. VCC
Temp=+25C
f=200 MHz
92
94
96
98
100
102
-50 -25 025 50 75 100
Icc (mA)
Temperature (°C)
Icc vs. Temperature
VCC=+5V
20
40
60
80
100
120
140
160
4.0 4.5 5.0 5.5 6.0
ICC (mA)
VCC (V)
ICC vs. VCC
+85°C
+25°C
−40°C
WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Data Sheet: Rev A 2/20/12
- 6 of 8 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Pin Description
RF IN GND RF OUT
GND
1
2
3
4
Pin
Symbol
Description
1
RF IN
RF input, matched to 50 ohms. External DC Block is required.
3
RF OUT
RF output / DC supply, matched to 50 ohms. External DC Block, bias choke required.
2, 4
GND Paddle
Backside Paddle. Multiple vias should be employed to minimize inductance and thermal
resistance; see PCB mounting pattern in Mechanical Information section.
Evaluation Board PCB Information
TriQuint PCB 1069136 Material and Stack Up
1 oz. Cu bottom layer
Nelco N-4000-13
Nelco N-4000-13
εr=3.7 typ.
Nelco N-4000-13 1 oz. Cu top layer
1 oz. Cu inner layer
1 oz. Cu inner layer
0.014"
0.014"
0.062 ± 0.006
Finished Board
Thickness
WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Data Sheet: Rev A 2/20/12
- 7 of 8 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Mechanical Information
Package Information and Dimensions
The component will be marked on the
top surface of package with an “A1500”
designator and an alphanumeric lot code.
Mounting Configuration
All dimensions are in millimeters (inches). Angles are in degrees.
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
3. RF trace width depends upon the PC board material and construction.
4. Use 1 oz. Copper minimum.
5. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been
developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process
development is recommended.
A1500
WJA1500
+5 V Active-Bias InGaP HBT Gain Block
Data Sheet: Rev A 2/20/12
- 8 of 8 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Product Compliance Information
ESD Information
ESD Rating: Class 1C
Value: Passes 1000 V to < 2000 V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes 1000 V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
Solderability
Package lead plating: NiPdAu
Compatible with both lead-free (260 °C max. reflow
temperature) and tin/lead (245 °C max. reflow
temperature) soldering processes.
RoHS Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
MSL Rating
Moisture Sensitivity Level 3 at +260°C per JEDEC standard
IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com Tel: +1.503.615.9000
Email: info-sales@tqs.com Fax: +1.503.615.8902
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information. TriQuint products are not
warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other
applications where a failure would reasonably be expected to cause severe personal injury or death.
