SOLID STATE DEVICES, INC.
World's First Silicon Carbide
Centertap Rectifier
SSR40C30CT Series
14830 Valley V iew Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power .com * www .ssdi-power.com
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. RS0024BDA TA SHEET #:
Maximum Ratings 3/ SYMBOL UNITSVALUE
40 AMP 300 V
Schottky Silicon Carbide
Centertap Rectifier
DESIGNER'S DA TA SHEET
FEATURES:
• W orld's 1st Hermetic 40A SIC Centertap Rectifier
• High Voltage 300V
• Very High Operating T emperature, 250oC
• No Recovery Time (tfr or trr)
• High Current Operation, 40A
• Hermetic Packaging
• TX, TXV, S Level scr eening available
• Higher V oltage upon Request
Peak Repetitive Reverse and
Peak Surge Reverse Voltage
20
40 AmpsIo
VRRM
VRSM
A verage Rectified Forward Current.
(Resistive load, 60Hz, Sine Wave)
72 AmpsIFSM
200
300
Maximum Thermal Resistance
Junction to Case 1.9
2.4
oC/W
Rθθ
θθ
θJC
oC-55 TO +250TOP & TstgOperating and Storage T emperature
Volts
120
95 Watts
PdPower Dissipation
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io) Per Leg
TO-254 (M)
SSR40C20
SSR40C30
SMD.5 (S.5)Cerpack (G)
Per Leg
Total
SSR40C 30 S.5 CT TX
Part Number /Ordering Information 1/
Screening
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Configuration
CT = Centertap
Package 2/
S.5 = SMD .5
G = Cerpack
M = TO-254
Voltage
20 = 200V
30 = 300V
S.5 & G Package
M Package
S.5 & G Package
M Package
1
2
3
SOLID STATE DEVICES, INC.
World's First Silicon Carbide
Centertap Rectifier
SSR40C30CT Series
14830 Valley V iew Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power .com * www .ssdi-power .com
Electrical Characteristics (per leg) SYMBOL UNITS
VF3
VF4
MAX
IR1 µµ
µµ
µA150
Reverse Leakage Current
(VR = Rated VR, TJ = 25oC, 300µs pulse min.)
Instantaneous Forward V oltage Drop
(TJ = 25oC, 300µsec Pulse ) 1.35
1.70 VDC
VF1
VF2
Instantaneous Forward V oltage Drop 1.30
1.80 VDC
CJpF650
Junction Capacitance
(VR = 10VDC, TC = 25oC, f = 1MHz)
MIN
--
--
--
--
IR2 µµ
µµ
µA500
Reverse Leakage Current
(VR = Rated VR, TJ = 150oC, 300µs pulse min.) --
QCnC-
Total Capasitive Charge
(V
R
= 400V, I
F
= 5A, di/dt = 200A/
µ
s, T
J
= 150
o
C)
--
TYP
100
1.25
1.57
1.22
1.55
450
200
26
NOTES:
1/ For Ordering Information, Price, and A vailability Contact Factory .
2 / For Package Outlines Contact Factory.
3/ All Electrical Characteristics @25oC Unless Otherwise Specified.
4/ If High T emperature Operation is Desired (> 175oC) Consult Factory for Soldering Consideration.
PIN ASSIGNMENT
Pin 3Pin 1PACKAGE
Anode
Cathode
Cathode
Anode
TO-254 (M)
CERPACK (G)
Available Part Numbers:
SSR40C20GCT SSR40C20MCT SSR40C20S.5CT
SSR40C30GCT SSR40C30MCT SSR40C30S.5CT Pin 2
Anode
Anode
AnodeCathodeSMD.5 (S.5) Anode
VF5
VF6
Instantaneous Forward V oltage Drop
(TJ = -55oC, 300µsec pulse )
1.45
1.75 VDC
-- 1.35
1.60
If = 10A
If = 20A
(TJ = 150oC, 300µsec pulse ) If = 10A
If = 20A
If = 10A
If = 20A
