MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice. SILICON PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-4 SCHOTTKY DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-28 TUNING VARACTORS DIODES ............................................... 12-31 POWER GENERATION DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-40 CASE STYLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-47 MOS CAPACITORS: Please consult page 7-39 of this catalog SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-1 Vol. 1 MICROWAVE SILICON COMPONENTS Introduction INTRODUCTION This part of the Microwave section presents TEMEX product lines including: * receiving diodes * control diodes * tuning varactors * multiplier varactors * step recovery diodes * high voltage PIN diodes TEMEX products are available in a complete assortment of packages including: * chips * standard * surface mount ceramic and plastic * non magnetic * custom IN-HOUSE PRODUCTION The silicon slice is the in-house starting point of TEMEX product manufacturing. From the virgin wafer, TEMEX performs all functions, including: * epitaxy * diffusion * photomasking * metallization * passivation * dicing * packaging * control and burn-in TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottky metallurgies, all junction passivations, and all mesa operations. 12-2 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net MICROWAVE SILICON COMPONENTS Symbols SYMBOLS Cb .................................... Case Capacitance Cj .................................... Junction Capacitance CT .................................... Total Capacitance CX/Cy .................................... Tuning Ratio f .................................... Test Frequency FCO .................................... Cut-off Frequency FI .................................... Frequency Input FIF .................................... Intermediate Frequency FO .................................... Output Frequency Foper .................................... Operating frequency IF .................................... Forward Continuous Current IR .................................... Reverse Continuous Current IRP .................................... Reverse Pulse Current L .................................... Conversion Loss N/A .................................... Not Applicable NFSSB .................................... Single Sideband Noise Figure NFIF .................................... Noise Figure of Intermediate Frequency .................................... Gold Contact Diameter PCW .................................... CW Power Capability Pdiss .................................... Power Dissipation Pin .................................... Power Input PL .................................... Limiting Threshold PLO .................................... Local Oscillator Power PO .................................... Output Power PRF .................................... RF Power Q-X .................................... Figure of Merit RSF .................................... Forward Series Resistance Rth .................................... Thermal Resistance RV .................................... Video Resistance .................................... Minority Carrier Lifetime TCR .................................... Reverse Switching Time Tj .................................... Junction Temperature tSO .................................... Snap-off Time TSS .................................... Tangential Sensitivity VBR .................................... Breakdown Voltage VF .................................... Forward Continuous Voltage VR .................................... Applicable Voltage (RF + bias) VSWR .................................... Voltage Standing Wave Ratio VT .................................... Forward Threshold Voltage VTO .................................... Threshold Voltage ZIF .................................... Impedance at Intermediate Frequency ZO .................................... Output Impedance I SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-3 Vol. 1 SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide PAGE HOW TO SPECIFY A PIN DIODE? 12-5 SURFACE MOUNT PACKAGE - PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 12-6 - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 12-8 - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES 12-10 - SQUARE CERAMIC PIN DIODES 12-12 - NON MAGNETIC SQUARE CERAMIC PACKAGE 500 V PIN DIODES 12-15 HIGH VOLTAGE PIN DIODES - SWITCHING & PHASE SHIFTING APPLICATIONS 12-18 - TWO AND THREE PORTS RF PIN SWITCH MODULES 12-20 MICROWAVE APPLICATIONS 12-4 Vol. 1 12-17 12-22 - ULTRAFAST SWITCHING SILICON PIN DIODES 12-23 - FAST SWITCHING SILICON PIN DIODES 12-24 - ATTENUATOR SILICON PIN DIODES 12-25 - SILICON LIMITER PIN DIODES 12-26 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON PIN DIODES How to specify a PIN diode HOW TO SPECIFY A PIN DIODE ? To obtain the PIN diodes best suited for a specific application, consider the following: 1. 2. 3. Application * switch * attenuator * limiter 8. Maximum loss expected 9. Minimum isolation needed 10. VSWR and distortion requirements Frequency and bandwidth requirements 11. Power applied to the diode * forward biased Power characteristics * reverse biased * peak * during switching * average * pulse duration and duty cycle 4. Switching time 5. Bias conditions * forward * reverse 12.Static characteristics * applicable voltage: VR * total capacitance: CT (in space charge) 6. Circuit impedance 7. Shunt or series assembly * forward series resistance: RSF * carrier lifetime l * thermal resistance: Rth 13. Mechanical and packaging constraints SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-5 Vol. 1 SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes PLASTIC PACKAGE SURFACE MOUNT SWITCHING SILICON PIN DIODES Description TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package. This product family is designed for a low cost, medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. The use of this technology eliminates wire bonding on to the chips. Applications The DH50XXX series PIN diodes are offered in a large selection of capacitance range (.3 pF to 1.2 pF) and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching time and low switching current. TEMEX' diodes are designed to cover a broad range of CW low power (up to 2 W), medium peak power, RF and microwave applications (up to 3 GHz). Main applications include: SPST and SPDT switches, antenna (Wireless Communication Systems) and filter switches, phase shifters .... Note: To reduce the distortion, it is necessary to verify and design with the following formula: IHF l IDC F 12-6 Vol. 1 IHF : RF peak current (A) l : Diode minority carrier lifetime (s) IDC : DC bias current (A) F : Application frequency (Hz) << 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON PIN DIODES Plastic package Surface Mount switching silicon PIN diodes Characteristics @ Ta = +25 C PACKAGED DIODES Breakdown voltage (VBR (1)) Total capacitance (CT (2)) Series resistance (RSF) Minority carrier lifetime (I) F = 1 MHz IF = 10 mA IF = 10 mA VR = 50 V pF max F = 120 MHz max IR = 6 mA ns typ. IR = 10 A Test conditions Type V min. DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 35 35 50 100 100 200 200 400 0.3 (3) 1 (3) 0.35 (4) 0.35 1.2 0.35 1.2 0.6 2.5 0.5 1.5 3 0.6 3 0.6 2 (5) 150 200 200 500 1000 500 1000 2000 (1) : Other breakdown values on request (4) : VR = 20 V at F = 1 MHz (2) : Other capacitance values on request (5) : RSF at IF = 5 mA (3) : VR = 5 V at F = 1 MHz Temperature ranges: Operating junction (Tj) : -55 C to +125 C Storage : -55 C to +150 C Packages SOD323 SOT23 SOT23 SOT23 SOT143 DH50051-60 DH50058-60 DH50053-60 DH50103-60 DH50109-60 DH50203-60 DH50209-60 DH80051-60 DH50051-51 DH50058-51 DH50053-51 DH50103-51 DH50109-51 DH50203-51 DH50209-51 DH80051-51 DH50051-53 DH50058-53 DH50053-53 DH50103-53 DH50109-53 DH50203-53 DH50209-53 DH80051-53 DH50051-54 DH50058-54 DH50053-54 DH50103-54 DH50109-54 DH50203-54 DH50209-54 DH80051-54 DH50051-70 DH50058-70 DH50053-70 DH50103-70 DH50109-70 DH50103-70 DH50209-70 DH80051-70 Packages DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 (1) Other configuration available on request. How to order? DH50051 Diode type - 51 T3 Package information Conditioning 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-7 Vol. 1 SILICON PIN DIODES Plastic package Surface Mount attenuating silicon PIN diodes PLASTIC PACKAGE SURFACE MOUNT ATTENUATING SILICON PIN DIODES Description TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package. This product family is designed for a low cost, medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. The use of this technology eliminates wire bonding on to the chips. Applications Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits, from MHz to several GHz. The attenuating Pin diode uses properties of variation of forward series resistance versus the DC forward bias current. In order to obtain the best dynamic range, a single diode attenuator may be used in series or shunt configuration or designed as a multiple diode circuit (T or p circuit), where the device may be matched through the attenuation range. Note: To reduce the distortion, it is necessary to verify and design with the following formula: IHF l IDC F << 1 IHF : RF peak current (A) l : Diode minority carrier lifetime (s) IDC : DC bias current (A) F Application frequency (Hz) : Typical performance curve RSF () 1000 Typical series resistance versus forward current 100 DH40144 DH40225 DH40141 10 1 0.1 12-8 Vol. 1 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net IF (mA) 10 SILICON PIN DIODES Plastic package Surface Mount attenuating silicon PIN diodes Electrical characteristics at 25 C Electrical Parameters I Zone thickness Test conditions Type DH40141 DH40144 DH40225 Forward series resistance Rsf () (1) m Junction capacitance Reverse current Carrier lifetime Cj (2) IR F = 1 MHz VR = 100 V I IF = 10 mA F = 120 MHz IF = 0.1 mA typ. 140 140 220 min. 400 200 400 IF = 1 mA IF = 10 mA max min. max min. 800 50 100 6.5 400 25 50 3.5 800 50 100 6.5 max 13 7 13 pF typ. 0.05 0.10 0.10 max 0.10 0.30 0.30 IR = 6 mA A s max 10 10 10 typ. 2.5 5.0 7.0 (1) Other I zone thicknesses on request (2) Other capacitance values on request (measured at 50 V) Temperature ranges: Operating junction (Tj) : Storage : - 55 C to + 125 C - 65 C to + 150 C Packages SOD323 SOT23 SOT143 DH40141-60 DH40144-60 DH40225-60 DH40141-51 DH40144-51 DH40225-51 DH40141-70 DH40144-70 DH40225-70 Packages DH40141 DH40144 DH40225 (1) Other configuration available on request. How to order? DH40141 Diode type - 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 87: SOT323 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-9 Vol. 1 SILICON PIN DIODES Low cost square ceramic package PIN diodes LOW COST SQUARE CERAMIC PACKAGE PIN DIODES Features Description * Low loss, low distortion * Low inductance * High reliability * Hermetically sealed package * Non rolling MELF design * Pick and place compatibility TEMEX is manufacturing a square PIN diode for surface mount applications. The chip inside is passivated to ensure high reliability and very low leakage current. These diodes ensure high power switching at frequencies from HF to few GHz. This package utilizes ceramic package technology with low inductance and leadless faced package. The design simplifies automatic pick and place indexing and assembly. The termination contacts are tin plated for vapor or reflow circuit board soldering. The active area is a PIN glass passivated chip, which can be designed to customer specifications. Pinning Outline drawing A SOLDERABLE SURFACES A CERAMIC C B Package FULL FACE BOND CHIP SMD4 SMD6 SMD8 12-10 Vol. 1 Symbol A B C A B C A B C Millimeters min. max 2 2.3 2.9 3.5 0.3 0.8 2.5 2.8 4.7 5.2 0.3 0.8 3.50 3.81 4.70 5.2 0.20 0.38 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net Inches min. max .079 .091 .114 .138 .012 .031 .098 .0110 .185 .205 .012 .031 .138 .150 .185 .205 .008 .015 SILICON PIN DIODES Low cost square ceramic package PIN diodes Applications TEMEX square ceramic diodes are particularly suitable for high volume tape and reel assembly. Several values of total capacitance are available, together with a low forward series resistance. These components are designed to meet the low distortion specification required by all the mobile radio applications. Due to the specific design, these devices offer low loss and low thermal resistance performance and are characterized for high power handling. The electrical properties are ideal for use in antenna switches, filters, phase shifters, in all mobile radio applications from few MHz to GHz frequencies. Electrical characteristics at 25 C Electrical Parameter Applicable voltage V Package Test conditions w! Ne IR < 10 A Type Type SQM1050 SQM1150 SQM1250 SQM1350 SQM1450 SQM2050 SQM2150 SMD4 (2) SMD4 SMD4 SMD4 (2) SMD8 SMD4 SMD4 (1) (2) V max 50 200 50 50 50 50 50 Total capacitance CT Forward series resistance RSF f = 1 MHz f = 120 MHz Minority carrier lifetime I IF = 10 mA VR = 50 V pF typ. max 0.6 0.7 1.0 1.2 0.9 1.2 1.5 1.7 1.8 2.5 0.6 0.7 1.0 1.2 IF = 50 mA typ. max 0.70 0.90 0.25 0.35 0.50 0.75 0.40 0.60 0.50 0.75 0.7 1.00 0.25 0.35 IR = 6 mA s min. 1.0 1.0 2.0 3.5 5.0 1.0 1.0 Power dissipation Contact surface (1) W max 3.0 3.0 4.0 4.5 8.0 3 3 diode brazed on infinite copper heat sink at 25 C standard package SMD4 also available in SMD6 Temperature ranges: Operating junction (Tj) Storage Soldering : -55 C to +150 C : : -65 C to +150 C 230 C 5 Sec. SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-11 Vol. 1 SILICON PIN DIODES Square ceramic surface mountable PIN diodes SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES Description These PIN diodes are manufactured in a square package (SMD) for surface mount applications. These packages utilize ceramic package technology with low inductance and axial terminations. This design simplifies automatic pick and place indexing and assembly. The termination contacts are tin lead plated for vapor or reflow circuit board soldering on Printed Circuit Boards. These diodes are particularly suited for applications in frequency hopping radios, low loss, low distortion, and filters in HF, VHF and UHF frequencies. Packages Packages SMD4 SMD4AM DH50209 DH80050 DH80051 DH80052 DH80053 DH80054 DH80055 DH80082 DH80100 DH80102 DH80106 -06 -06 -06 -06 -06 -06 -06 -06 -06 -40 -40 -40 -40 -40 -40 -40 -40 -40 SMD6 -20 -20 -20 -20 SMD8 SMD8AM -24 -24 -44 -44 Other specifications available on request. How to order? DH80053 Diode type 12-12 Vol. 1 - 06 Package information -06: SMD4 -40: SMD4AM SMD8AM -20: SDM6 -24: SMD8 T3 Conditioning T1: 1000 pieces tape & reel T3: 3000 pieces tape & reel blank: bulk SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON PIN DIODES Square ceramic surface mountable PIN diodes Electrical characteristics Low voltage PIN diodes Test conditions Type DH50209 Breakdown Vbr Total capacitance Forward series resistance Minority carrier (V) Ct (pF) Rsf () t l (s) min. Vr = 50 V f = 1 MHz typ. max. If = 50 mA f = 120 MHz max. If = 10 mA Ir = 6 mA min. 200 1.00 0.25 2.00 Ir = 10 A 1.20 Medium voltage PIN diodes Test conditions Type DH80050 DH80051 DH80052 DH80053 DH80054 DH80055 Applicable Breakdown Total capacitance Forward series Minority Max. power voltage V Vbr Ct resistance Rsf carrier dissipation (V) (V) (pF) () l (s) 25 C I < 10 A Ir = 10 A Vr = 50 V I= 100mA I= 200 mA If= 10mA Contact Free f = 1MHz f= 120MHz f= 120 MHz Ir= 6mA surface air max. typ. typ. max. max. min. W (1) W (2) 500 550 0.40 0.45 0.70 0.65 1.1 3.0 1.2 500 550 0.55 0.65 0.60 0.55 1.5 3.5 1.2 500 550 0.85 1.05 0.40 0.35 2.0 4.0 1.2 500 550 1.05 1.20 0.35 0.30 2.5 4.0 1.5 500 550 1.25 1.35 0.30 0.27 3.0 4.5 1.5 500 550 1.45 1.55 0.28 0.25 3.5 4.5 1.5 (1) Diode brazed on infinite copper heat sink (2) Diode brazed on Epoxy circuit (PCB) SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-13 Vol. 1 SILICON PIN DIODES Square ceramic surface mountable PIN diodes Medium voltage PIN diodes Test conditions Type DH80082 DH80100 DH80102 DH80106 Applicable Breakdown Total capacitance Forward series voltage V Vbr Ct resistance Rsf (V) (V) (pF) () Vr = 50 V I=100mA I=200 mA I < 10 A Ir = 10 A f = 1MHz f=120MHz f=120 MHz max. typ. typ. max. max. 800 850 0.90 1.00 0.40 0.35 1000 1100 0.55 0.65 0.70 0.60 1000 1100 0.85 1.00 0.50 0.35 1000 1100 1.25 2.00 0.35 0.30 Minority Max. power carrier dissipation l (s) 25 C If=10mA Contact Free Ir=6mA surface air min. W (1) W (2) 3.00 TBD TBD 3.00 TBD TBD 4.00 TBD TBD 7.00 TBD TBD (1) Diode brazed on infinite copper heat sink (2) Diode brazed on Epoxy circuit (PCB) Temperature ranges Operating junction (Tj) Storage : -55 C to +150 C : -65 C to +150 C Series Resistance vs. Forward Current 100 RSF () DH80052 DH80050 10 1 0 0.1 100 10 I (mA) 1000 100 RSF () 10 DH80053 DH80051 1 0 0.1 12-14 Vol. 1 10 100 I (mA) 1000 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON PIN DIODES Non magnetic square ceramic package 500 volts PIN diodes NON MAGNETIC SQUARE CERAMIC PACKAGE 500 VOLTS PIN DIODES Features Description * Non magnetic package * Low loss, low distortion * Low inductance * High reliability * Hermetically sealed package * Glass passivated PIN diode chip * Non rolling MELF design * Pick and place compatibility TEMEX is manufacturing a non magnetic square PIN diode for surface mount applications. The properties of non magnetism prevent interference in the magnetic field of the imaging system. The chip inside is passivated to ensure high reliability and very low leakage. These diodes ensure high power switching at frequencies from 1 MHz to several GHz. This package utilizes ceramic package technology with low inductance and axial terminations. The design simplifies automatic pick and place indexing and assembly. The termination contacts are tin plated for vapor or reflow circuit board soldering. The active area is a PIN high power glass passivated chip which can be designed to customer specifications. Pinning Outline drawing 2 (.0 .00 +0 80 + -0 .3 .0 -0 12 ) SOLDERABLE SURFACES +0.3 -0 +.012 -0 2.00 (.080 ) CERAMIC +0.3 -0.3 3.20 (.126 ) 0.635 max (.025 max) +.012 -.012 FULL FACE BOND CHIP SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-15 Vol. 1 SILICON PIN DIODES Non magnetic square ceramic package 500 volts PIN diodes Applications Maximum ratings TEMEX non magnetic SQP diodes are particularly suitable for Magnetic Resonance Imaging applications. The maximum operating breakdown voltage is 550 V. Several values of total capacitance are available (beginning at 0.40 pF), together with a low forward series resistance. These devices are characterized for high power handling, low loss and low distortion (long carrier lifetime design). The electrical properties are ideal for use in RF coils which must produce a homogeneous electromagnetic field in the MRI system for frequencies from a few MHz to over 100 MHz. OPERATING JUNCTION STORAGE SOLDERING - 55 C - 65 C 230 C 5 sec. + 150 C + 150 C Electrical characteristics STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS PACKAGED DIODES Characteristics at 25 C Applicable Breakdown voltage voltage V CT RSF I f = 1 MHz f = 120 MHz IF = 10 mA VR = 50 V IF as below IR = 6 mA pF max s W conditions IR < 10 A TYPE V V max typ. typ. max 500 500 500 500 500 500 550 550 550 550 550 550 0.40 0.55 0.85 1.05 1.25 1.45 0.45 0.65 1.05 1.20 1.35 1.55 DH80050-40 DH80051-40 DH80052-40 DH80053-40 DH80054-40 DH80055-40 (1) Forward series resistance VBR Test Ir < 10 A Minority carrier lifetime Total capacitance Contact surface IF=100mA IF=200mA min. max 0.70 0.60 0.40 0.35 0.30 0.25 0.65 0.55 0.35 0.30 0.27 0.22 1.1 1.5 2.0 2.5 3.0 3.5 3.0 3.5 4.0 4.0 4.5 4.5 diode brazed on infinite copper heat sink 12-16 Vol. 1 Power dissipation SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net (1) SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency (RF) and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters. The controlling element of a PIN diode is its Intrinsic (l) layer. The diode itself is a sandwich, i.e. a high resistivity l layer between highly doped layers of P and N materials. With negative bias on the l layer, the PIN diode exhibits very high parallel resistance, e.g. acting as a switch in the OFF position. A positive bias causes the diode to conduct, with very low series resistance. Certain applications impose specific objectives on diode construction (e.g. in the HF and VHF band, low signal distortion can be achieved with high Minority Carrier Lifetime l). TEMEX high-voltage PIN diode products are designed for very high reliability, high power handling capabilities, high isolation, and low signal distortion, especially in the HF and VHF bands. High-power multithrow switch modules are available for frequencies in the 1 MHz to 1 GHz range. All high-voltage PIN diode products can be configured on chips or in various packages: e.g. series, shunt, flat mount, stud mount, surface mount (SMD) and (on request) non-magnetic. SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-17 Vol. 1 SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS (MEDIUM & HIGH POWER) Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz. These diodes are available in non-magnetic packages. Electrical characteristics CHIP DIODES Characteristics at 25C Chip dimensions Test conditions TYPE PIN EH80050 EH80051 EH80052 EH80053 EH80055 EH80080 EH80083 EH80086 EH80100 EH80102 EH80106 Breakvoltage down VR VBR Applicable N/A I < 10A I < 10A mm typ. Gold dia per side 0.13 0.15 0.25 0.27 0.34 0.13 0.27 0.55 0.23 0.30 0.55 0.6 0.6 0.8 0.8 0.9 0.8 0.9 1.4 0.9 0.9 1.4 CHIP AND PACKAGED DIODES Junction Forward series Minority capacitance resistance carrier Cj (1) RSF lifetime I VR = 50 V f = 120 MHz IF = 10 mA f = 1 MHz IF IR = 6mA V min. V typ. typ. max IF = 100 mA 500 500 500 500 500 800 800 800 1000 1000 1000 550 550 550 550 550 850 850 850 1100 1100 1100 0.15 0.30 0.60 0.80 1.2 0.15 0.80 1.4 0.30 0.60 1.40 0.20 0.40 0.70 0.90 1.3 0.35 0.90 1.7 0.40 0.75 1.70 pF VR = 100V EH80120 EH80124 EH80126 EH80129 EH80154 EH80159 0.25 0.65 0.75 1.25 0.65 1.25 0.9 1.5 H (2) 1.7 H (2) 2.2 1.5 2.2 1200 1200 1200 1200 1500 1500 1300 1300 1300 1300 1600 1600 0.30 1.00 1.40 2.00 1.00 2.00 0.40 1.20 1.70 2.30 1.20 2.30 VR = 200V EH80182 EH80189 EH80204 EH80209 EH80210 (1) (2) 12-18 Vol. 1 0.75 1.4 0.85 1.4 1.5 1.5 2.6 H (2) 1.7 2.6 H (2) 3 H (2) AS SHOWN 1800 1800 2000 2000 2000 1900 1900 2100 2100 2100 0.60 2.00 1.00 2.00 3.00 0.80 2.40 1.30 2.40 3.40 IF = 200 mA S min. 0.70 0.60 0.40 0.30 0.25 0.80 0.40 0.35 0.70 0.40 0.35 0.65 0.55 0.30 0.25 0.22 0.70 0.30 0.28 0.60 0.35 0.30 1.1 1.5 2.0 2.5 3.0 2.0 3.0 5.0 3.0 4.0 7.0 IF = 200 mA IF = 300 mA 0.60 0.45 0.40 0.30 0.45 0.30 0.55 0.35 0.30 0.25 0.35 0.25 IF = 200 mA IF = 300 mA 0.60 0.35 0.50 0.35 0.20 0.50 0.30 0.40 0.30 0.15 Other capacitance values available on request Hexagonal chips (between opposite flats) SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net MAX 6.0 10.0 12.0 15.0 10.0 15.0 12.0 18.0 14.0 18.0 25.0 SILICON PIN DIODES High voltage PIN diodes PACKAGED DIODES Type Thermal resistance RTH (4) Standard case (3) Typical operating conditions VSWR < 1.5 Z0 = 50 PDISS = 1 W Chip configuration C/W PIN DH80050 DH80051 DH80052 DH80053 DH80055 DH80080 DH80083 DH80086 DH80100 DH80102 DH80106 Shunt F 27d F 27d F 27d F 27d F 27d F 27d F 27d BH35 F 27d F 27d BH35 Isolated stud BH301 BH301 BH301 BH301 BH301 BH301 BH301 BH301 BH301 BH301 BH300 Flat mounted BH202 BH202 BH202 BH202 BH202 BH202 BH202 BH202 BH202 BH202 BH202 max 20.0 18.0 15.0 12.0 10.0 18.0 12.0 8.0 15.0 12.0 5.5 DH80120 DH80124 DH80126 DH80129 DH80154 DH80159 F 27d BH35 BH35 BH141 BH141 BH141 BH301 BH300 BH300 BH300 BH300 BH300 BH202 BH200 BH200 BH200 BH200 BH200 DH80182 DH80189 DH80204 DH80209 DH80210 BH35 BH141 BH141 BH141 BH141 BH300 BH300 BH300 BH300 BH300 BH200 BH200 BH200 BH200 BH200 Frequency Power 50 30 20 20 10 50 20 10 20 20 10 MHz - 20000 - 15000 - 10000 3000 1000 - 20000 - 10000 500 - 10000 - 3000 500 W 50 80 100 100 250 60 80 200 80 100 500 15.0 8.0 6.0 4.5 8.0 4.5 10 10 10 5 10 5 - 8000 2000 500 200 2000 200 100 250 500 1000 250 1000 10 4.5 8.0 4.5 2.5 10 15 10 1.5 1.5 - 50 200 1000 200 50 1000 250 1000 1000 (3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink Temperature ranges: Operating junction (Tj): -55 C to +175 C SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net Storage: -65 C to +200 C 12-19 Vol. 1 SILICON PIN DIODES High voltage PIN diodes TWO & THREE PORT RF PIN SWITCH MODULES Description This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W. Electrical characteristics Loss Isolation Input power L I Pin N/A f (MHz) If (mA) f (MHz) Vr (V) CW Forward Reverse Switch Type MHz dB dB W mA V (2) typ. max min. max typ. typ. 10 10 100 100 50 50 100 100 100 100 200 200 200 200 150 150 150 150 1000 400 600 1000 1000 1000 1000 700 700 Characteristics at 25C Frequency range Test conditions Type Case (1) SH90101 SH91101 TO39 TO39 SP2T SP2T 10 - 600 10 - 600 SH90103 SH91103 SH92103 SH93103 BH203 BH203 BH204 BH204 SP2T SP2T SP3T SP3T 20 20 20 20 SH91107 BH403a SP2T 20 - 500 SH90207 SH91207 BH405 BH405 SP2T SP2T 1.5 - 50 1.5 - 50 - 1000 1000 1000 1000 (1) Series 90 and 92 : common anode Series 91 and 93 : common cathode 200 MHz 100 MHz 100 mA 0V 0.35 35 0.35 35 400 MHz 200 MHz 100 mA 0V 0.35 25 0.35 25 0.35 25 0.35 25 100 MHz 200 MHz 200 mA 100 V 0.20 33 10 MHz 10 MHz 200 mA 200 V 0.15 37 0.15 37 (2) Custom configurations available on request Temperature ranges: Operating junction (Tj) : Storage : 12-20 Vol. 1 Suggested bias conditions - 55 C to + 150 C - 65 C to + 175 C SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON PIN DIODES High voltage PIN diodes Internal wiring diagrams Typical performances INSERTION LOSS AND ISOLATION VERSUS FREQUENCY common anode common cathode Isolation (dB) Insertion loss (dB) 0.9 46 0.8 44 42 0.7 Isolation 0.6 BOTTOM VIEW SH91101 SH90101 38 0.4 36 0.3 34 0.2 32 Insertion loss 0.1 0 10 30 28 20 30 50 70 100 200 SH91103 400 600 Isolation (dB) Insertion loss (dB) SH90103 40 0.5 0.8 52 0.7 48 0.6 44 0.5 40 Isolation 0.4 36 32 0.3 28 0.2 24 Insertion loss 0.1 0 20 SH92103 30 20 Isolation (dB) Insertion loss (dB) 52 0.7 48 0.6 44 0.5 40 Isolation 0.4 36 0.3 32 Insertion loss 0.2 SH91107 28 24 0.1 0 20 30 50 70 100 bias bias bias 200 300 20 500 0.8 54 0.7 51 0.6 48 0.5 45 Isolation 0.4 42 0.3 SH91207 f (MHz) Isolation (dB) Insertion loss (dB) SH90207 f 50 70 100 200 400 700 1000 (MHz) SH93103 0.8 bias f (MHz) 38 Insertion loss 0.2 36 33 0.1 30 0 1 2 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 3 5 7 10 20 30 50 f (MHz) 12-21 Vol. 1 SILICON PIN DIODES Microwave applications MICROWAVE APPLICATIONS Low and medium voltage PIN diode applications The most common uses of these devices are: fast switching, attenuation and limiting. They operate at frequencies from a few MHz to 100 GHz. In switching applications, e.g. timing digital bit streams, these PIN diodes support signal power levels below 30 W, up to 100 GHz. Thin I layers, from 1 to 50 m, and passivated mesa technology in chip configurations, yield very low junction capacitance (Cj), i.e. below 0.025 pF. As attenuators, e.g. in Automatic Gain Control (AGC) circuits, these PIN diodes are manufactured with a proprietary technology. This technology optimizes the relationship between Cj and RSF (Forward Series Resistance), offering a high Minority Carrier Lifetime l, which minimizes signal distortion. In limiting applications, e.g. passive protection for receivers, these PIN diodes operate as power dependent variable resistors. 12-22 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer (< 10 m). Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction at 25C dia voltage capacitance O Test VBR IR = 10 A conditions PACKAGED DIODES Series Minority Reverse resistance carrier switching lifetime time RSF I Thermal resistance Cj VR = 6 V IF = 10 mA IF = 10 MA IF = 20 mA Rth Pdiss f = 1 MHz f = 120 MHz IR = 6 mA VR = 10 V 1W TCR 50 Type Case m V typ. min. pF typ. max ns ns max typ. typ. F 27 d Type C2a (1) EH50033 EH50034 EH50035 EH50036 EH50037 EH50052 EH50053 EH50054 EH50055 EH50056 EH50057 EH50071 EH50072 EH50073 EH50074 EH50075 EH50076 EH50077 EH50101 EH50102 EH50103 EH50104 EH50105 EH50106 EH50107 (1) (2) 25 30 35 55 65 30 35 40 50 65 80 35 40 45 50 60 80 100 45 50 60 70 90 110 130 30 30 30 30 30 50 50 50 50 50 50 70 70 70 70 70 70 70 100 100 100 100 100 100 100 0.08 0.12 0.17 0.23 0.40 0.06 0.08 0.12 0.17 0.23 0.40 0.04 0.06 0.08 0.12 0.17 0.23 0.40 0.04 0.06 0.08 0.12 0.17 0.23 0.40 0.12 0.17 0.23 0.40 0.60 0.08 0.12 0.17 0.23 0.40 0.60 0.06 0.08 0.12 0.17 0.23 0.40 0.60 0.06 0.08 0.12 0.17 0.23 0.40 0.60 1.8 1.5 1.0 0.9 0.7 1.6 1.4 1.1 1.0 0.9 0.7 2.0 1.7 1.6 1.4 1.0 0.9 0.7 1.9 1.7 1.4 1.2 1.0 0.8 0.6 Custom cases available on request C T = Cj + C b 20 20 25 30 40 30 30 35 40 50 60 50 50 60 60 100 100 150 150 150 200 250 300 400 500 2.0 2.0 2.5 3.0 4.0 3.0 3.0 4.0 4.0 5.0 6.0 5.0 5.0 6.0 6.0 10.0 10.0 15.0 15.0 15.0 20.0 25.0 30.0 40.0 50.0 DH50033 DH50034 DH50035 DH50036 DH50037 DH50052 DH50053 DH50054 DH50055 DH50056 DH50057 DH50071 DH50072 DH50073 DH50074 DH50075 DH50076 DH50077 DH50101 DH50102 DH50103 DH50104 DH50105 DH50106 DH50107 Standard cases (1) Cb = 0.18 pF Cb = 0.12 pF (2) (2) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 C/W max 80 80 70 60 50 80 70 60 50 45 45 70 70 60 50 45 40 40 60 60 55 50 40 35 35 Temperature ranges: Operating Junction (Tj) : -55 C to +175 C Storage SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net : -65 C to +200 C 12-23 Vol. 1 SILICON PIN DIODES Microwave applications FAST SWITCHING SILICON PIN DIODES Description For fast switching, these passivated mesa diodes have a medium I layer (< 50 m). Electrical characteristics CHIP DIODES L CHIP E AND C PACKAGED T R IDIODES C A E Characteristics Gold Breakdown Junction at 25C dia voltage capacitance O Test VBR IR = 10 A conditions PACKAGED DIODES L Series Minority Reverse resistance carrier switching lifetime time RSF I Cj VR = 50 V IF = 10 mA IF = 10 MA IF = 20 mA f = 1 MHz f = 120 MHz IR = 6 mA VR = 10 V Thermal resistance Rth TCR Pdiss 1W 50 Type Case m V typ. min. pF typ. max ns ns max typ. typ. F27 d Type C2a (1) EH50151 EH50152 EH50153 EH50154 EH50155 EH50156 EH50157 EH50201 EH50202 EH50203 EH50204 EH50205 EH50206 EH50207 EH50251 EH50252 EH50253 EH50254 EH50255 EH50256 EH50401 EH50402 EH50403 EH50404 EH50405 55 60 70 90 110 130 150 60 65 75 100 120 150 170 65 75 100 130 160 180 80 90 120 150 200 150 150 150 150 150 150 150 200 200 200 200 200 200 200 250 250 250 250 250 250 400 400 400 400 400 0.04 0.06 0.08 0.12 0.17 0.23 0.40 0.04 0.06 0.08 0.12 0.17 0.23 0.40 0.04 0.06 0.08 0.12 0.17 0.23 0.04 0.06 0.08 0.12 0.17 0.06 0.08 0.12 0.17 0.23 0.40 0.60 0.06 0.08 0.12 0.17 0.23 0.40 0.60 0.06 0.08 0.12 0.17 0.23 0.40 0.06 0.08 0.12 0.17 0.23 2.0 1.7 1.5 1.4 1.0 0.8 0.6 2.3 2.1 1.5 1.3 1.0 0.8 0.7 2.4 2.2 2.0 1.4 0.9 0.8 2.5 2.3 2.1 1.8 1.6 200 230 300 500 550 800 950 300 400 500 650 800 950 1050 330 500 900 900 1000 1150 700 800 1000 1500 2000 20 23 30 50 55 80 95 30 40 50 65 80 95 100 33 50 90 90 100 110 70 80 100 150 200 DH50151 DH50152 DH50153 DH50154 DH50155 DH50156 DH50157 DH50201 DH50202 DH50203 DH50204 DH50205 DH50206 DH50207 DH50251 DH50252 DH50253 DH50254 DH50255 DH50256 DH50401 DH50402 DH50403 DH50404 DH50405 Standard cases (2) Cb = Cb = 0.18 pF 0.12 pF (2) (2) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 BH142 M208 M208 M208 BH142 BH142 C/W max 50 50 45 40 35 30 30 45 45 40 35 30 30 25 40 40 35 30 30 25 35 35 30 25 20 (1) Chip presentation C2a, except: C2b for EH50256, EH50404 and EH50405 Temperature ranges: Operating junction (Tj) : -55 C to +175 C (2) Custom cases available on request (3) CT = Cj + Cb Storage : -65 C to +200 C 12-24 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON PIN DIODES Microwave applications ATTENUATOR SILICON PIN DIODES Description The table below presents a single set of values from the variety of customer options available for this series of passivated PIN diodes. TEMEX uses its proprietary technology, which enables the customer to incorporate characteristics specific to the application involved, e.g. capacitance and I zone thickness. Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits, from a few MHz to several GHz. Electrical characteristics Charact. at 25C Test conditions Type EH40073 EH40141 EH40144 EH40225 C O N F I G U R A T I O N PACKAGED DIODES CHIP AND PACKAGED DIODES CHIP DIODES I ZONE Series resistance THICKNESS RSF C4c C4a C4c C4d (1) Junction capacitance F = 120 MHz m IF = 0.1 mA IF = 1 mA typ. 70 140 140 220 min. 70 400 200 400 min. 8 50 25 50 CJ (2) IR I F = 1 MHz VR = 50 V VR = 100 V IF = 10 mA IR = 6 mA pF A s IF = 10 mA max 140 800 400 800 max 16 100 50 100 min. 1.0 6.5 3.5 6.5 max 2.0 13.0 7.0 13.0 Reverse Minority carrier current lifetime typ. 0.30 0.05 0.10 0.10 max 0.50 0.10 0.30 0.30 max 10 10 10 10 min. 1.5 1.5 4.0 5.5 typ. 2.0 2.5 5.0 7.0 Type Standard package (3) DH40073 DH40141 DH40144 DH40225 F 27d F 27d F 27d F 27d (1) (2) Other I zone thicknesses available on request Other capacitance values available on request Temperature ranges: Operating junction (Tj) : -55 C to +175 C (3) Custom cases available on request Storage : -65 C to +200 C Typical series resistance vs forward current 1000 RSF () EH40141 - EH40225 EH40144 100 EH40073 10 1 0.1 1 10 100 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net IF (mA) 12-25 Vol. 1 SILICON PIN DIODES Microwave applications SILICON LIMITER PIN DIODES Description These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceramic packages. They operate as power dependent variable resistances and provide passive receiver protection (low noise amplifiers, mixers, and detectors). Electrical characteristics PACKAGED DIODES CHIP DIODES GOLD DIA Characteristics at 25C O Test conditions Type EH60033 EH60034 EH60035 EH60036 EH60037 EH60052 EH60053 EH60054 EH60055 EH60056 EH60057 EH60072 EH60074 EH60076 EH60102 EH60104 EH60106 (1) 12-26 Vol. 1 Case C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a Breakdown voltage Junction capacitance Junction capacitance VBR Cj0 Cj-6 (1) I IR = 10 A VR = 0 V VR = 6 V V f = 1 MHz pF f = 1 MHz pF m Minority Series carrier resistance lifetime RSF IF = 10 mA IF = 10 mA f = 120 MHz IR = 6 mA ns typ. min. max typ. min. max max typ. 25 30 35 55 65 30 35 40 50 65 80 40 50 80 50 70 110 25 25 25 25 25 50 50 50 50 50 50 70 70 70 90 90 90 50 50 50 50 50 70 70 70 70 70 70 90 90 90 120 120 120 0.14 0.20 0.28 0.45 0.70 0.10 0.14 0.20 0.28 0.45 0.70 0.10 0.20 0.45 0.10 0.20 0.45 0.08 0.12 0.17 0.23 0.40 0.06 0.08 0.12 0.17 0.23 0.40 0.06 0.12 0.23 0.06 0.12 0.23 0.12 0.17 0.23 0.40 0.60 0.08 0.12 0.17 0.23 0.40 0.60 0.08 0.17 0.40 0.08 0.17 0.40 1.8 1.5 1.0 0.9 0.7 1.8 1.4 1.1 1.0 0.9 0.8 1.7 1.4 0.9 1.7 1.2 0.8 20 20 25 30 40 30 30 35 40 50 60 50 60 100 150 250 400 Other values of capacitance available on request SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON PIN DIODES Microwave applications PACKAGED DIODES Characteristics at 25C Test conditions Type DH60033 DH60034 DH60035 DH60036 DH60037 DH60052 DH60053 DH60054 DH60055 DH60056 DH60057 DH60072 DH60074 DH60076 DH60102 DH60104 DH60106 (2) (3) Standard case (2) Cb = 0.18 pF Cb = 0.12 pF (3) (3) F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 F 27d M208 NOMINAL MICROWAVE CHARACTERISTICS Insertion loss L f = 2.7 GHz f = 2.7 GHz Pdiss = 1W 1dB f = 2.7 GHz PIN = -10 case F 27d Limiting dBm C/W dBm dBm dB Thermal Threshold resistance PL RTH Leakage power POUT Peak power PIN 1 s Pulse 1% DC dBm CW power PIN W max typ. typ. typ. max max 80 80 70 60 50 80 70 60 50 45 45 70 50 40 60 50 35 + 10 + 10 + 10 + 10 + 10 + 15 + 15 + 15 + 15 + 15 + 15 + 18 + 18 + 18 + 20 + 20 + 20 + 20 + 20 + 21 + 22 + 23 + 24 + 24 + 25 + 26 + 27 + 28 + 27 + 30 + 32 + 31 + 33 + 35 0.1 0.1 0.1 0.2 0.2 0.1 0.1 0.1 0.1 0.2 0.2 0.1 0.2 0.2 0.2 0.2 0.3 + 50 + 50 + 52 + 53 + 56 + 52 + 52 + 53 + 54 + 57 + 58 + 54 + 55 + 58 + 56 + 59 + 61 2.0 2.0 2.5 3.0 4.0 2.5 2.5 3.0 3.5 4.0 5.0 3.0 4.0 5.0 3.5 5.0 7.0 Other capacitance values available on request CT = Cj +Cb Temperature ranges: Operating junction (Tj) : -55 C to +125 C Storage SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net : -65 C to +200 C 12-27 Vol. 1 SILICON SCHOTTKY DIODES Selection guide SILICON SCHOTTKY DIODES Selection Guide PAGE SCHOTTKY BARRIER DETECTOR DIODES 12-29 SCHOTTKY BARRIER MIXER DIODES 12-30 12-28 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: * packaged diodes * chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz. Electrical characteristics packaged diodes Characteristics at 25C Frequency Tangential sensitivity range Foper Tss Test conditions N/A TYPE GHz Video resistance RV Video bandwidth = 1 MHz IF = 30 A dBm CASE (1) min. DH340 (1) F51 2 - 12 12 - 18 k Forward continuous Breakdown voltage currenT VBR IF CW IR = 10 A N/A mW mA V min. max max max typ. 1 2 250 50 3 - 54 - 51 Custom cases available on request RF power PRF Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C Typical tangential sensitivity vs frequency * T = + 25 C * IF = 30 A * Video bandwidth = 1 MHz TSS (dBm) -56 -54 -52 -51 1 2 5 10 20 f (GHz) SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-29 Vol. 1 SILICON SCHOTTKY DIODES Silicon Schottky barrier mixer diodes SILICON SCHOTTKY BARRIER MIXER DIODES Description Silicon Schottky barrier mixer diodes are available in the following configurations: * packaged * chip Low barrier diodes are required for applications where the Local Oscillator (LO) drive level is between - 10 dBm and + 10 dBm. Medium barrier diodes are required for applications where the LO drive level is between - 5 dBm and + 15 dBm. The use of a passivated planar construction contributes to high reliability. Electrical characteristics packaged diodes Characteristics at 25C Frequency SSB Noise range figure Foper NFSSB VSWR IF Impedance (ratio) ZIF N/A (1) N/A Type GHz dB max ratio typ. max DH301 DH302 DH303 DH312 DH313 DH314 DH315 DH322 DH323 DH324 DH325 F51 F51 F51 F51 F51 F51 F51 F51 F51 F51 F51 1-6 1-6 1-6 6 - 12 6 - 12 6 - 12 6 - 12 12 - 18 12 - 18 12 - 18 12 - 18 6.5 6.0 5.5 7.0 6.5 6.0 5.5 7.5 7.0 6.5 6.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 Breakdown Total voltage capacitance VBR CTO f = 30 MHZ F = 1 MHZ I = 10 A PLO = 1 mW Pulse = 3 nS R VR = 0 V Test conditions Case (2) Test pulse energy 2 2 2 2 2 2 2 2 2 2 2 min. max Ergs max 200 200 200 200 200 200 200 200 200 200 200 400 400 400 400 400 400 400 400 400 400 400 5 5 5 5 5 5 5 5 5 5 5 V typ. pF typ. 3 3 3 3 3 3 3 3 3 3 3 0.40 0.40 0.40 0.25 0.25 0.25 0.25 0.17 0.17 0.17 0.17 RF Power max: 250 mW CW Temperature ranges: Operating junction (Tj) : -55 C to +150 C (1) Storage Noise figure measurement conditions: PLO = 1 mW fIF = 30 MHz NFIF = 1.5 dB noise tube: 15.6 dB dc load = 10 test frequencies: 3.0, 9.3 or 15.0 GHz (2) 12-30 Vol. 1 Custom cases available on request SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net : -65 C to +175 C TUNING VARACTOR Selection guide TUNING VARACTOR Selection Guide PAGE SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR 12-32 HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR - VBR = 30 V 12-34 - VBR = 45 V 12-35 SILICON HYPERABRUPT JUNCTION TUNING VARACTOR 12-36 MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR 12-39 A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast band receivers. SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-31 Vol. 1 TUNING VARACTOR Plastic package Surface Mount Silicon abrupt tuning varactor SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. Applications The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range. They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device. Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase shifters, delay line, etc. NOTE: Variation of the junction capacitance versus reverse voltage follows this equation: Cj (Vr) = Cj (0 V) 1 + Vr [ Vr : : : 12-32 Vol. 1 ] Reverse voltage Built-in potential .7V for Si .5 for abrupt tuning varactor SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net TUNING VARACTOR Plastic package Surface Mount Silicon abrupt tuning varactor Electrical characteristics at Ta = +25 C Reverse breakdown voltage, Vb = @10 A: 30 V min. Electrical parameters Breakdown voltage VBR Test Conditions IR = 10 A Type Junction capacitance Cj F = 1 MHz V pF (1) DH71010 30 DH71016 30 DH71020 30 DH71030 30 DH71045 30 DH71067 30 DH71100 30 (1) Other tolerance on request Figure of merit Q Cj0V/Cj30V VR = 4 V min. Tuning ratio 1.0 20% 1.6 20% 2.0 20% 3.0 20% 4.5 20% 6.7 10% 10 10% VR = 4 V F = 50 MHz typ. typ. 4.0 4.5 4.6 4.7 4.8 4.9 5.0 4300 4100 3900 3400 2200 2600 2200 Temperature ranges: Operating junction (Tj): -55 C to +125 C Storage: -65 C to +150 C Packages SOD323 SOT23 SOT23 SOT23 SOT143 DH71010-60 DH71016-60 DH71020-60 DH71030-60 DH71045-60 DH71067-60 DH71100-60 DH71010-51 DH71016-51 DH71020-51 DH71030-51 DH71045-51 DH71067-51 DH71100-51 DH71010-53 DH71016-53 DH71020-53 DH71030-53 DH71045-53 DH71067-53 DH71100-53 DH71010-54 DH71016-54 DH71020-54 DH71030-54 DH71045-54 DH71067-54 DH71100-54 DH71010-70 DH71016-70 DH71020-70 DH71030-70 DH71045-70 DH71067-70 DH71100-70 Packages DH71010 DH71016 DH71020 DH71030 DH71045 DH71067 DH71100 (1) Other configuration available on request. How to order? DH71010 Diode type - 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-33 Vol. 1 TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band. CHIP AND PACKAGED DIODES VBR (10 A) 30 V CHIP DIODES Characteristics at 25C Gold dia O Test Conditions Type Case m junction capacitance Cj Fig. of merit Q VR = 4 V VR = 4 V f = 1 MHZ f = 50 MHZ pF typ. 20 % (2) min. PACKAGED DIODES (1) Standard cases Other cases Tuning ratio CTO/CT30 Tuning ratio CTO/CT30 CASE CAPACITANCE Cb CASE CAPACITANCE Cb Type Case Case min. 4.9 5.0 5.0 5.1 5.1 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 EH71004 EH71006 EH71008 EH71010 EH71012 EH71016 EH71020 EH71025 EH71030 EH71037 EH71045 EH71054 C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a 50 60 70 80 90 100 110 120 140 150 170 180 0.4 0.6 0.8 1.0 1.2 1.6 2.0 2.5 3.0 3.7 4.5 5.4 10 % (2) 4500 4500 4400 4300 4200 4100 3900 3600 3400 3200 3000 2800 DH71004 DH71006 DH71008 DH71010 DH71012 DH71016 DH71020 DH71025 DH71030 DH71037 DH71045 DH71054 Cb= 0.18 pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d Cb= 0.18 pF (3) EH71067 EH71080 EH71100 EH71120 EH71150 EH71180 EH71200 EH71220 EH71270 EH71330 EH71390 EH71470 EH71560 EH71680 EH71820 EH71999 C2a C2b C2b C2b C2b C2b C2b C2b C2b C2c C2c C2c C2c C2c C2d C2d 200 220 250 270 300 330 350 370 410 450 500 540 590 650 720 800 6.7 8.0 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 2600 2400 2200 2000 1800 1700 1500 1400 1300 1200 950 750 650 500 400 300 DH71067 DH71080 DH71100 DH71120 DH71150 DH71180 DH71200 DH71220 DH71270 DH71330 DH71390 DH71470 DH71560 DH71680 DH71820 DH71999 F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d 3.0 3.4 3.7 4.0 4.3 4.5 4.6 4.6 4.7 4.7 4.8 4.8 Cb= 0.12 pF (3) min. M208 3.3 M208 3.7 M208 4.0 M208 4.3 M208 4.5 M208 4.6 M208 4.7 M208 4.8 M208 4.8 M208 4.8 M208 4.9 M208 4.9 Cb= 0.2 pF (3) BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 4.9 5.0 5.0 5.1 5.1 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 (1) Custom cases available on request (2) Closer capacitance tolerances available on request Temperature ranges: Operating junction (Tj) : -55 C to +150 C (3) CT = Cj + Cb Storage 12-34 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net : -65 C to +175 C TUNING VARACTOR High Q silicon abrupt junction tuning varactor VBR 45 V Description This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to X band. Chip diodes Chip and packaged diodes VBR (10 A) 45 V GOLD Characteristics at 25 C DIA O Test conditions Type Case Junction Capacitance Cj Fig. of Merit Q VR = 4 V VR = 4 V f = 1 MHZ f = 50 MHZ STANDARD CASES Packaged diodes (1) OTHER CASES Tuning Ratio CTO/CT45 Tuning Ratio CTO/CT45 Case Capacitance Cb Case Capacitance Cb Case m pF Type Case typ. 20 % (2) min. Cb = 0.18 pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d Cb =0.18pF (3) min. Cb 3.5 3.9 4.2 4.5 4.7 5.0 5.2 5.4 5.5 5.6 5.7 5.8 Cb EH72004 EH72006 EH72008 EH72010 EH72012 EH72016 EH72020 EH72025 EH72030 EH72037 EH72045 EH72054 C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a 60 80 90 110 110 120 140 150 170 190 210 230 0.4 0.6 0.8 1.0 1.2 1.6 2.0 2.5 3.0 3.7 4.5 5.4 10 % (2) 3000 2900 2800 2700 2700 2600 2500 2400 2300 2200 2000 1900 DH72004 DH72006 DH72008 DH72010 DH72012 DH72016 DH72020 DH72025 DH72030 DH72037 DH72045 DH72054 EH72067 EH72080 EH72100 EH72120 EH72150 EH72180 EH72200 EH72220 EH72270 EH72330 EH72390 C2b C2b C2b C2b C2b C2b C2b C2c C2c C2c C2c 250 280 310 340 380 420 440 470 520 570 620 6.7 8.0 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 10 % (2) 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800 DH72067 DH72080 DH72100 DH72120 DH72150 DH72180 DH72200 DH72220 DH72270 DH72330 DH72390 F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d Cb = 0.18 pF (3) 5.9 5.9 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 EH72470 EH72560 EH72680 C2d C2d C2d 680 740 820 47.0 56.0 68.0 10 % (2) 700 600 450 DH72470 DH72560 DH72680 BH28 BH28 BH28 Cb = 0.4 pF (3) 6.0 6.0 6.0 EH72820 EH72999 C2g C2g 900 1000 82.0 100.0 350 250 DH72820 DH72999 BH141 BH141 6.0 6.0 = 0.12 pF (3) min. M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 = 0.2pF (3) 3.7 4.1 4.5 4.7 4.9 5.2 5.5 5.6 5.7 5.7 5.8 5.9 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 (1) (2) Custom cases available on request Closer capacitance tolerances available on request Temperature ranges: Operating junction (Tj) : -55 C to +150 C (3) CT = Cj + Cb Storage SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net : -65 C to +175 C 12-35 Vol. 1 TUNING VARACTOR Plastic package, Surface Mount hyperabrupt tuning varactor PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. Application The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of capacitance range. They provide the highest Q factor (low reverse series resistance). Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase shifters, delay lines... 20 Volt hyperabrupt junction varactors Characteristics @ Ta=+25 C Reverse breakdown voltage, Vb = 20 V min. @ 10 A Reverse Current, Ir = 200 nA @ 16 V Test conditions Type DH76010 DH76015 DH76022 DH76033 DH76047 DH76068 DH76100 DH76150 f = 1 MHz Vr = 1 V typ 2.5 3.6 5.2 8.0 11.0 16.0 23.0 35.0 Total capacitance (pF) Ct f = 1 MHz f=1 MHz Vr = 4 V Vr = 12 V 20 % typ. 1.2 0.6 1.7 0.8 2.4 1.1 3.5 1.6 4.9 2.2 7.0 3.1 10.0 4.5 15.0 6.6 Temperature ranges: Operating junction (Tj) : -55 C to +125 C Storage : -55 C to +150 C f = 1 MHz Vr = 20 V typ. 0.5 0.7 0.9 1.3 1.7 2.4 3.5 5.1 Tuning ratio Ct1V/Ct12V Ct1V/Ct20V f = 1 MHz f = 1 MHz typ. typ. 4.1 4.9 4.4 5.4 4.7 5.8 4.9 6.1 5.0 6.4 5.1 6.5 5.2 6.7 5.2 6.8 12 Volt hyperabrupt junction varactors Characteristics @ Ta=+25 C Reverse breakdown voltage, Vb = 12 V min. @ 10 A Reverse Current, Ir = 200 nA @ 8 V Test conditions Type f = 1 MHz Vr = 1 V typ DH77033 DH77047 DH77068 DH77100 DH77150 6.0 8.5 12.0 18.0 27.0 12-36 Vol. 1 Total capacitance (pF) Ct f = 1 MHz f=1 MHz Vr = 2.5 V Vr = 4 V 20 % typ. 3.5 4.9 7.0 10.0 15.0 1.9 2.7 3.8 5.5 8.1 Temperature ranges: Operating junction (Tj) : -55 C to +125 C Storage : -55 C to +150 C Tuning ratio Ct1V/Ct2.5V Ct1V/Ct4V f = 1 MHz f = 1 MHz typ. typ. 1.7 1.7 1.7 1.7 1.8 3.1 3.2 3.2 3.2 3.3 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net TUNING VARACTOR Plastic package, Surface Mount hyperabrupt tuning varactor Typical junction capacitance versus reverse voltage Profils in Cj 100.00 10.00 Cj (pF) 76010 76015 76022 76033 76047 76068 76100 76150 1.00 0.01 10 0.1 100 0.10 VR (V) Cj (pF) 100 10 DH77033 DH77047 DH77068 DH77100 DH77150 0.1 1 1 V (V) SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 10 12-37 Vol. 1 TUNING VARACTOR Plastic package, Surface Mount hyperabrupt tuning varactor Packages SOD323 SOT23 SOT23 SOT23 SOT143 DH76010-60 DH76015-60 DH76022-60 DH76033-60 DH76047-60 DH76068-60 DH76100-60 DH76150-60 DH77033-60 DH77047-60 DH77068-60 DH77100-60 DH77150-60 DH76010-51 DH76015-51 DH76022-51 DH76033-51 DH76047-51 DH76068-51 DH76100-51 DH76150-51 DH77033-51 DH77047-51 DH77068-51 DH77100-51 DH77150-51 DH76010-53 DH76015-53 DH76022-53 DH76033-53 DH76047-53 DH76068-53 DH76100-53 DH76150-53 DH77033-53 DH77047-53 DH77068-53 DH77100-53 DH77150-53 DH76010-54 DH76015-54 DH76022-54 DH76033-54 DH76047-54 DH76068-54 DH76100-54 DH76150-54 DH77033-54 DH77047-54 DH77068-54 DH77100-54 DH77150-54 DH76010-70 DH76015-70 DH76022-70 DH76033-70 DH76047-70 DH76068-70 DH76100-70 DH76150-70 DH77033-70 DH77047-70 DH77068-70 DH77100-70 DH77150-70 Packages DH76010 DH76015 DH76022 DH76033 DH76047 DH76068 DH76100 DH76150 DH77033 DH77047 DH77068 DH77100 DH77150 (1) Other configuration available on request. How to order? DH76150 Diode type 12-38 Vol. 1 - 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net TUNING VARACTOR High Q silicon hyperabrupt junction tuning varactor HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from VHF up to Ku band. Characteristics @ Ta = +25 C Reverse breakdown voltage, Vb = @ 10 A: 20 V min. Reverse current, Ir @ 16 V: 200 nA Test conditions Type Case (1) DH76010 F27d DH76015 F27d DH76022 F27d DH76033 F27d DH76047 F27d DH76068 F27d DH76100 F27d DH76150 F27d (1) Figure of Total capacitance (pF) merit (Q) Ct f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz Vr = 4 V Vr = 1 V Vr = 4 V Vr = 12 V Vr = 20 V typ. typ. 20% typ. typ. 2200 2.5 1.2 0.6 0.5 2000 3.6 1.7 0.8 0.7 1700 5.2 2.4 1.1 0.9 1400 7.7 3.5 1.6 1.3 1000 11 4.9 2.2 1.7 700 16 6.9 3.0 2.4 400 23 10.2 4.5 3.5 140 34 15.2 6.6 5.1 Custom cases available on request Tuning ratio Ct1V/Ct12V Ct1V/CT20V f = 1 MHz f = 1 MHz typ. typ. 4.1 4.9 4.4 5.4 4.7 5.8 4.9 6.1 5.0 6.4 5.1 6.5 5.2 6.7 5.2 6.8 Chip EH76010 EH76015 EH76022 EH76033 EH76047 EH76068 EH76100 EH76150 Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +150 C Typical junction capacitance reverse voltage Profils in Cj 100.00 10.00 Cj (pF) 76010 76015 76022 76033 76047 76068 76100 76150 1.00 0.01 10 0.1 100 0.10 VR (V) SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-39 Vol. 1 POWER GENERATION DIODES Selection guide POWER GENERATION DIODES Selection Guide PAGE STEP RECOVERY DIODES - STANDARD 12-42 - SURFACE MOUNT PLASTIC PACKAGES 12-43 SILICON MULTIPLIER VARACTORS 12-40 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-45 POWER GENERATION DIODES Step recovery diodes and multiplier varactor applications STEP RECOVERY DIODES AND MULTIPLIER VARACTOR APPLICATIONS A Step Recovery Diode (SRD) generates pulses that can be used to multiply frequencies, and to set up reference points, e.g. for synchronizing test instruments. This device operates by alternately producing and consuming a charge, based on the frequency of its input signal. During forward bias, the SRD conducts and builds up its charge. During reverse bias, the SRD maintains conduction by consuming its charge. When the charge has been fully consumed, the SRD snaps off, i.e. very quickly reverts to zero conduction. This device acts as a switch, controlling current flow by alternately storing and releasing its charge, forming pulses at a repetition rate equal to the frequency of its input. The output of a step recovery diode is most often used in two ways: * * a pulse train can be applied to resonant circuits, which provides output power at a frequency above that of the original input, a pulse train can be used to develop a series of frequencies at multiples of the original input frequencies. Typical applications of step recovery diodes include oscillators, power transmitters and drivers, for telecommunications, telemetry, radar and test equipment. In choosing a SRD, the significant characteristics include: Output Frequency (fo) ; Breakdown Voltage (VBR) ; Junction Capacitance (Cj) ; Minority Carrier Lifetime (l); Snap-off Time (tso) ; Thermal Resistance (Rth) and Output Power (Po). Multiplier varactors A multiplier varactor is a physical stack of series-connected SRD units. This configuration is capable of multiplying power. Packages for multiplier varactors are designed to dissipate the power yield Power out Power in ( ( Most of these packages hold from 2 to 4 chips, this type of components are available on customer request. SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-41 Vol. 1 POWER GENERATION DIODES Step recovery diodes (SRD) STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: * very short pulse generation, * ultra fast waveform shaping, * comb generation, * high order multiplication, at moderate power ratings. Chip diodes Chip and packaged diodes Gold Breakdown Junction Min. car. Snap-Off Characteristics dia voltage capacitance lifetime time at 25C tI tso Vbr Cj Vr =6 V If =10mA If = 10 mA Test conditions N/A Ir = 10 A f = 1 MHz Ir = 6 mA Vr = 10 V Type Case EH541 EH542 EH543 EH544 EH545 EH546 (1) (2) C2a C2a C2a C2a C2a C2a m V pF ns ps typ. min. max min. typ. max 160 220 110 140 55 40 30 50 30 50 25 15 1.5 1.5 1.0 1.0 0.4 0.3 25 40 20 35 10 6 Custom cases available on request CT = Cj + Cb 90 150 90 150 75 60 140 250 140 250 100 80 Pdiss = 1 W in F 27d Type DH541 DH542 DH543 DH544 DH545 DH546 Case (1) Cb =0.1pF (2) A22e A22e A22e A22e A22e A22e C/W max 30 25 40 35 70 100 Other cases (1) Cb =0.18pF Cb =0.12pF (2) (2) F27d M208 F27d M208 F27d M208 F27d M208 F27d M208 F27d M208 Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage 12-42 Vol. 1 Packaged diodes Thermal resistance Rth : -65 C to +175 C SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net POWER GENERATION DIODES Plastic package Surface Mount step recovery diodes PLASTIC PACKAGE SURFACE MOUNT S.R.D. Description Our SRD diodes are also available in plastic package. They incorporate a passivated mesa technology. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. Application The DH54X series support fast switching and multiplier applications: * * * * very short pulse generation ultra fast waveform shaping comb generation high order multiplication at moderate power ratings. Temperature ranges Operating junction (Tj) : -55C to +125C Test conditions Type DH541 DH542 DH543 DH544 DH545 DH546 Storage : -55 C to +150 C Breakdown Junction Minority Snapp-Off Vbr (V) capacitance carrier Cj (pF) Vr = 6 V f = 1 MHz max. 1.5 1.5 1.0 1.0 0.4 0.3 lifetime t l (ns) If = 10 mA Ir = 6 mA min. 25 40 20 35 10 6 time tso (ps) If = 10 mA Vr = 10 V typ. max. 90 140 150 250 90 140 150 250 75 100 60 80 Ir = 10 A min. 30 50 30 50 25 15 Packages SOD323 SOT23 SOT23 SOT23 SOT143 DH541-60 DH542-60 DH543-60 DH544-60 DH545-60 DH546-60 DH541-51 DH542-51 DH543-51 DH544-51 DH545-51 DH546-51 DH541-53 DH542-53 DH543-53 DH544-53 DH545-53 DH546-53 DH541-54 DH542-54 DH543-54 DH544-54 DH545-54 DH546-54 DH541-70 DH542-70 DH543-70 DH544-70 DH545-70 DH546-70 Packages DH541 DH542 DH543 DH544 DH545 DH546 (1) Other configuration available on request. SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-43 Vol. 1 POWER GENERATION DIODES Plastic package Surface Mount step recovery diodes How to order? DH541 Diode type 12-44 Vol. 1 - 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors (from 0.2 to 25 GHz) are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders. Packaged diodes Characteristics at 25C Varactor chips Test per Conditions package Type Case DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 M208b BH142b S268-W1 F27d F60d F27d F27d F27d F27d Output freq. Fo Breakdown voltage Vbr N/A IR = 10 A GHz 1 1 1 1 1 1 1 1 1 0.2 - 2 0.5 - 2 2-3 2-4 3-6 2-8 5 - 12 8 - 16 10 - 25 Junction Min. car. capacitance lifetime Cj I VR = 6 V min. max f = 1 MHz pF min. max 45 90 80 60 50 40 30 20 15 70 140 110 90 70 60 45 35 25 4.0 5.5 4.0 3.0 2.0 0.9 0.5 0.2 0.2 V 7.0 7.0 5.5 4.0 3.0 2.0 1.1 0.5 0.3 Snap-Off Thermal time resistance tso Rth IF = 10 mA IF = 10 mA N/A IR = 6 mA VR = 10 V Power output Po fo = (n)fi ns min. ps max C/W max W typ. (n) 125 250 160 100 60 35 20 10 6 400 1000 700 400 250 200 120 75 60 300 8 10 25 30 50 60 70 100 0.5 20.0 15.0 9.0 6.0 3.0 2.0 0.6 0.2 2 2 2 2 2 2 2 2 2 Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-45 Vol. 1 MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .....................12-48 SMD3 ......................12-56 BH15 .....................12-48 BH28 .....................12-48 SMD4 ......................12-56 BH16 .....................12-48 BH32 .....................12-48 SMD6 ......................12-56 BH101 .....................12-49 BH35 .....................12-48 SMD8 ......................12-56 BH143 .....................12-50 BH142a .....................12-49 SOD323 ......................12-56 BH151 .....................12-50 BH142b .....................12-49 SOT23 ......................12-56 BH152 .....................12-50 BH142c .....................12-49 SOT143 ......................12-57 BH153 .....................12-50 BH142d .....................12-49 SOT323 ......................12-57 BH154 .....................12-50 BH142e .....................12-49 BH155 .....................12-50 BH142f .....................12-49 BMH76 .....................12-53 BH167 .....................12-51 BH167s .....................12-51 BH198 .....................12-51 F27d .....................12-54 F30 .....................12-54 F51 .....................12-54 F54 .....................12-54 F54s .....................12-55 F60 .....................12-55 F60d .....................12-55 M208a .....................12-55 M208b .....................12-55 M208c .....................12-55 M208d .....................12-55 M208e .....................12-55 M208f .....................12-56 POWER PAGE BH141 ......................12-49 BH158 ......................12-51 BH158am ......................12-51 BH200a ......................12-52 BH202 ......................12-52 BH203a ......................12-52 BH203b ......................12-52 BH203c ......................12-52 C2 .....................12-54 BH204 ......................12-52 C4 .....................12-54 BH300 ......................12-53 BH301 ......................12-53 BH303 ......................12-53 BH403a ......................12-53 BH405 ......................12-53 CHIP vERSION PAGE S268/W1 .....................12-56 TO39 .....................12-57 W2 .....................12-57 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-47 Vol. 1 MICROWAVE SILICON COMPONENTS Case styles Cb=0.1pF A22e E 1.7 D 0.35 0.41 .014 DIA .016 DIA C Cb=0.1pF 2.1 .067 DIA .083 DIA 25.4 BH15 1 E D E B 25.4 A 4 SYM min. C B A .157 .173 max min. max BOL MILLIMETERS 0.09 0.11 .0035 .0043 D 0.28 0.48 .011 .019 C 3.82 4.58 .15 .18 B 0.15 0.35 .006 .014 A 1.17 1.37 .046 .054 SYM min. max min. max B 1 4.4 E C A INCHES BOL MILLIMETERS INCHES D Cb=0.16pF BH16 E B E 0.08 0.12 .003 Cb=0.2pF .005 D 0.45 0.55 .018 .022 C 4.58 5.58 .180 .220 B 0.66 0.86 .026 .034 A 2.4 2.6 .094 .102 BH28 C 2.04 SYM min. max min. max .080 .098 B 1.93 2.13 .076 DIA .084 DIA A A 3.00 3.20 .118 DIA .126 DIA SYM min. C 2.50 max BOL MILLIMETERS min. max INCHES C D BOL MILLIMETERS INCHES A B Cb=0.2pF Cb=0.25pF BH32 BH35 C A 3.5 3.9 .138 A 5.64 6.04 .222 DIA .238 DIA SYM min. max BOL MILLIMETERS min. max 5.14 5.93 .202 .233 G 1.37 1.77 .054 .070 F 1.78 1.98 .070 .078 C E 1.37 1.77 .054 .070 D D 1.52 1.62 .060 DIA .064 DIA .154 B 3.86 4.26 .152 DIA .168 DIA H C 3.96 4.16 .156 DIA .164 DIA G B 3.05 3.25 .120 DIA .128 DIA INCHES C H B F A 1.52 1.62 .060 DIA .064 DIA SYM min. E max BOL MILLIMETERS B 12-48 Vol. 1 A SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net min. max INCHES MICROWAVE SILICON COMPONENTS Case styles Cb=0.15pF BH101 E 0.05 0.15 .002 .006 D 0.55 0.65 .022 .026 C 5 Cb=0.4pF BH141 .197 F B A A D C 0.28 0.48 .028 E 4.70 5.10 .185 .201 D 12.8 13.4 .504 .526 C .019 2.3 2.7 .091 .106 SYM min. max min. max BOL MILLIMETERS A .011 0.70 A E B F 6. 40 UNF-3A B 5.20 5.40 .205 DIA .203 DIA E A 6.50 6.70 .256 DIA .263 DIA D SYM min. INCHES max BOL MILLIMETERS min. max INCHES C B Cb=0.2pF BH142a D B D A C F 0.1 0.5 .004 .020 F 0.06 0.10 .0024 .0039 E 0.55 0.65 .022 .026 D 2.5 C 2.10 2.70 .083 .106 B 1.24 1.58 .049 .062 SYM min. Cb=0.2pF B BH142b B .098 max BOL MILLIMETERS BH142c Cb=0.2pF B A min. SYM min. 0.06 0.10 .0024 .0039 BH142d D 0.55 0.65 .022 .026 E C 5 B 1.24 E Cb=0.2pF A .197 B max BOL MILLIMETERS D Cb=0.2pF BH142e SYM min. A C .049 .062 min. C INCHES 0.06 0.10 .0024 .0019 D 0.55 0.65 .022 .026 C 5 B 1.24 E E C Cb=0.2pF .197 max BOL MILLIMETERS .062 min. max INCHES .049 .062 min. B A 0.06 0.10 .0024 .0039 D 0.55 0.65 .022 .026 C 5 B 1.24 .197 1.58 .049 .062 SYM min. C min. max INCHES E 0.06 0.10 .0024 .0039 D 0.55 0.65 .022 .026 C 10 B 1.24 SYM min. D max .394 1.58 .049 .062 A 1.90 2.20 .075 DIA .087 DIA max INCHES E BOL MILLIMETERS D BH142f A 1.90 2.20 .075 DIA .087 DIA SYM min. .049 A 1.90 2.20 .075 DIA .087 DIA max E 1.58 max BOL MILLIMETERS max A 1.90 2.20 .075 DIA .087 DIA C 1.58 INCHES E 1.58 1.24 A 1.90 2.20 .075 DIA .087 DIA A A 1.90 2.20 .075 DIA .087 DIA E G G E max BOL MILLIMETERS min. max INCHES D SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-49 Vol. 1 MICROWAVE SILICON COMPONENTS Case styles Cb=0.1pF BH143 C E E 0.08 0.12 .003 .005 D 0.45 0.55 .094 .102 C 7.60 B 0.45 .299 0.55 A 2.40 2.60 B A SYM min. D Cb=0.25pF BH151 max BOL MILLIMETERS .018 .022 E .094 .102 min. max B INCHES E 0.08 0.12 .003 .005 D 0.35 0.45 .014 .018 C E 3.70 4.30 .147 .169 A 0.20 0.30 BH154 1.37 .046 .054 SYM min. max min. max C C A INCHES D 0.35 0.45 .014 .018 C 3.70 4.30 .147 .169 B 0.20 0.30 .008 .012 A 1.17 1.37 .046 .054 SYM min. max min. max C A E 0.08 0.12 .003 .005 D 0.45 0.55 .018 .022 C 6.15 6.55 .242 .258 B 0.91 1.01 .036 .040 A 1.68 1.88 .066 .074 SYM min. max min. max BOL MILLIMETERS INCHES E 0.08 0.12 .003 .005 D 0.45 0.55 .018 .022 C 6.15 6.55 .242 .258 B 0.91 1.01 .036 .040 A 1.68 1.88 .066 .074 SYM min. max min. max D INCHES Cb=0.13pF BH155 E 0.08 0.12 .003 .005 D 0.45 0.55 .018 .022 C 6.15 6.55 .242 .258 B 0.91 1.01 .036 .040 A 1.68 1.88 .066 .074 SYM min. max min. max B E C C D INCHES A 12-50 Vol. 1 .005 BOL MILLIMETERS B C .012 C Cb=0.13pF E .008 1.17 BOL MILLIMETERS D A B E B .003 Cb=0.13pF BH153 B 0.12 C A Cb=0.05pF 0.08 BOL MILLIMETERS D BH152 E D SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net BOL MILLIMETERS INCHES MICROWAVE SILICON COMPONENTS Case styles Cb=0.4pF Cb=0.4pF BH158 D 4.00 4.50 .157 BH158am .177 C 5.10 5.50 .200 DIA .216 DIA A B 4.90 5.30 .193 A .209 A 6.50 6.70 .256 DIA .264 DIA SYM min. B max min. 4.1 C 5.2 B 4.7 A 5.7 SYM min. max B D BOL MILLIMETERS D 4.4 .16 .173 5.5 .204 DIA .216 DIA 5.2 .185 .205 6.1 .224 DIA .240 DIA max min. max D BOL MILLIMETERS INCHES INCHES C C G Cb=0.12pF F BH167 1.86 0.71 2.06 0.81 .073 .028 Cb=0.12pF .081 BH167s .032 F E E A D E C B A B 0.61 0.66 .024 DIA .026 DIA 1.55 1.75 .060 A D .070 C 1.22 1.32 .048 DIA 052 DIA 2.57 2.87 .101 B .113 D 1.42 1.62 .056 DIA .064 DIA SYM min. max min. F max BOL MILLIMETERS 0.81 .028 .032 1.55 1.75 .061 .069 1.22 1.32 .048 DIA .052 DIA 1.86 2.06 .073 .081 1.42 1.62 .056 DIA .064 DIA SYM min. max BOL MILLIMETER G D B A 0.71 0.61 0.66 .024 DIA .026 DIA min. max INCHES E C INCHES F E C Cb=0.6pF BH198 4 (.157) 0.1 (.004) 2 (.079) L 4 .157 2 (.079) 1.70 (.070) Anode in 4 (.079) 0.5 (.020) Cathod Cathod 1.02 (.040) D1 1.55 1.75 .06 .069 D 1.68 1.88 .066 .074 C 0.07 0.15 .003 .006 B2 0.4 0.6 .016 .024 B1 0.92 1.12 .036 .044 A1 0.86 1.25 .034 .049 A 0.66 0.86 .026 .034 SYM min. max min. max 1.25 (.049)max Dimensions in mm (inches) Tg : 0.1 (.004) BOL MILLIMETER INCHES SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-51 Vol. 1 MICROWAVE SILICON COMPONENTS Case styles Cb=0.4pF BH200a L 43 47 43 47 K 5.49 5.89 .216 .232 J 30.48 31.50 1.200 DIA 1.240 DIA I A C E D G I H J 6.40 .248 L L .049 .051 .642 .658 G 6.30 6.40 .248 .252 F 0.23 0.27 .009 .011 E 2.50 2..67 .098 .105 D 18.26 18.67 .719 .735 C 24.64 24.89 .970 .980 B 6.78 7.19 .267 .283 E 0.10 0.127 .004 .005 D 6.78 7.19 .267 .283 C 3.86 4.27 .152 .168 max min. 3.10 3.25 .122 DIA .128 DIA 1.29 D A 3.10 3.25 .122 DIA .128 DIA BOL MILLIMETERS F K 12.14 12.24 .478 DIA .482 DIA 16.70 .980 SYM min. .178 1.25 .735 .970 F B L C E K I J .105 A 12.50 12.90 .492 DIA .508 DIA K 47 .162 16.30 .719 24.89 .098 43 4.52 H 18.67 24.64 2.667 47 4.12 I 18.26 2.50 43 L J G B BH202 M .252 H F B 6.30 Cb=0.15pF G A H max M SYM min. M INCHES 9.4 9.64 .370 DIA .380 DIA max min. BOL MILLIMETERS Cb=0.15pF BH203a M 43 47 43 47 L 4.12 4.52 .162 .178 K 12.14 12.24 .478 DIA .482 DIA J Cb=0.15pF BH203b .178 J 3.10 3.25 .122 DIA .128 DIA .049 .051 D I 1.25 1.29 .049 .051 A H 16.30 16.70 .642 .658 A H 16.30 16.70 .642 .658 G 6.30 6.40 .248 .252 G 6.30 6.40 .248 .252 F 0.23 0.27 .009 .011 F 0.23 0.27 .009 .011 E 2.50 2.67 .098 .105 E 2.50 2.67 .098 .105 D 18.26 18.67 .719 .735 D 18.26 18.67 .719 .735 C 24.64 24.89 .970 .980 C 24.64 24.89 .970 .980 B 6.78 7.19 .267 .283 B 6.78 7.19 .267 .283 K I G A H M F max min. BOL MILLIMETERS Cb=0.15pF BH203c A F B L C K I J G H 43 47 43 47 L 4.12 4.52 .162 .178 K J H G M A M I 1.25 1.29 .049 .051 H 16.30 16.70 .642 .658 G 6.30 6.40 .248 .252 F 0.23 0.27 .009 .011 E 2.50 2.67 .098 .105 D 18.26 18.67 .719 .735 C 24.64 24.89 .970 .980 B 6.78 7.19 .267 .283 9.4 9.64 .370 DIA .380 DIA SYM min. max BOL MILLIMETERS min. 9.4 9.64 .370 DIA .380 DIA SYM min. max min. BOL MILLIMETERS Cb=0.15pF BH204 INCHES M 43 47 43 47 L 4.12 4.52 .162 .178 J D A F B L C E K I J G M max K 12.14 12.24 .478 DIA .482 DIA 3.10 3.25 .122 DIA .128 DIA I A E INCHES K 12.14 12.24 .478 DIA .482 DIA D L C max M J B 9.4 9.64 .370 DIA .380 DIA SYM min. 12-52 Vol. 1 47 .162 1.29 C M 43 4.52 1.25 J M 47 4.12 I L E 43 L K 12.14 12.24 .478 DIA .482 DIA 3.10 3.25 .122 DIA .128 DIA F M M D B E max INCHES M H max INCHES SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 3.10 3.25 .122 DIA .128 DIA I 1.25 1.29 .049 .051 H 16.30 16.70 .642 .658 G 6.30 6.40 .248 .252 F 0.23 0.27 .009 .011 E 2.50 2.67 .098 .105 D 18.26 18.67 .719 .735 C 24.64 24.89 .970 .980 B 6.78 7.19 .267 .283 A 9.4 9.64 .370 DIA .380 DIA SYM min. max BOL MILLIMETERS min. max INCHES MICROWAVE SILICON COMPONENTS Case styles Cb=0.2pF Cb=0.4pF BH300 BH301 A I 3.25 3.45 .128 .136 H 5.60 6.00 .220 .236 G I E B H G F D 6 - 32 UNC - 3A F 2.97 3.38 .177 .133 0.20 0.30 .008 .012 D 20 - .787 - C 6.30 6.40 .248 .252 B 13.95 15.05 .549 .593 A 6.5 6.7 .256 DIA .264 DIA max BOL MILLIMETERS Cb=0.4pF BH303 E I B H G F 3.45 .128 .136 5.60 6.00 .220 .236 6 - 32 UNC - 3A D C B J G C F 2.97 3.38 .177 .133 E 0.20 0.30 .008 .012 D 20 - .787 - C 6.30 6.40 .248 .252 B 13.95 15.05 .549 .593 A 6.5 6.7 .256 DIA .264 DIA BOL MILLIMETERS .060 .064 3.02 .111 .119 H 4.42 4.82 .174 .190 4 - 40 UNC - 3A F 2.16 2.56 .85 E 0.18 0.20 .007 max .008 D 15.67 16.18 .617 .637 C 4.70 4.80 .185 .189 B 9.46 10.54 .372 .415 SYM min. Cb=0.3pF N - M max L E H F B K L C J D I M G N 3 BH405 H F I B G J C A J 0.97 1.07 .038 .042 I 2.49 2.59 .098 .102 H 2.9 3.1 .114 .122 G 22.4 22.6 .882 .890 F 0.20 0.30 .0079 .0118 E 6.1 6.5 .240 .256 D 9.2 9.6 .362 .378 C 9.68 B I E D G 14 14.2 .551 BMH76 B J H max BOL MILLIMETERS min. A D G max INCHES .120 10.08 .381 .397 2.72 3.12 .107 .123 I 1.57 1.98 .062 .078 H 0.10 0.15 .004 .006 G 1.78 2.03 .070 .080 F 4.39 4.64 .173 .183 E 1.90 2.16 .075 .085 D 25.4 - 1 - 10 - 32 UNF 3A B 12.50 12.90 .492 DIA .508 A 18.67 19.43 .735 .765 SYM min. max min. max I F C F SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net INCHES K 0.50 0.70 .020 .028 J 0.20 0.24 .008 .010 I 1.95 2.15 .077 .085 H 1.47 1.67 .058 .066 G 5.1 5.3 .201 .209 F 3.18 3.68 .125 .145 E 2.36 2.52 .093 DIA .099 DIA D A 19.6 19.8 .772 DIA .780 DIA SYM min. E K .559 - J C Cb=0.15pF 5/16 - 24 UNF - 2A max INCHES Typical: 45 BOL MILLIMETERS Cb=0.4pF min. K 10.46 10.87 .412 DIA .428 DIA A INCHES .101 A 3.00 3.20 .118 DIA .126 DIA D BH403a F min. 1.62 2.82 BOL MILLIMETERS 3.25 max I H INCHES I SYM min. E max H G A min. 1.52 I G E SYM min. C A J D 3.1 3.3 .122 C 4 4.2 .157 .165 B 3.02 3.22 .119 .127 A 10.3 10.5 .406 .413 SYM min. max min. max BOL MILLIMETERS .130 INCHES 12-53 Vol. 1 MICROWAVE SILICON COMPONENTS Case styles C2 O 1800 68.50 70.87 1500 56.69 59.06 C4G 1500 2500 59.06 1500 39.37 59.06 C2G 1140 1200 44.88 47.24 C2E 940 1000 37.01 39.37 C4E 700 1000 27.56 39.37 C2D 840 900 33.07 35.43 C4D 500 700 19.69 27.56 31.50 C4C 400 500 15.75 19.69 23.62 C4B 300 400 11.81 15.75 15.75 C4A 200 300 7.87 11.81 CON min. max min. max C2B C2A 740 800 540 600 340 400 CON min. A 98.43 C4F 1000 C2C A C4 C2J 1740 C2H 1440 FIG max 29.13 21.26 13.39 min. A A max A (m) FIG A (") A (m) A (") Cb=0.18pF F27d H 2.01 2.05 .079 DIA .081 DIA G G 2.95 3.15 .116 DIA .124 DIA F F 1.55 1.59 .061 DIA .063 DIA E 1.55 1.59 .061 DIA .063 DIA C H D Cb=0.25pF F30 B D 5.15 5.65 .202 .222 C 1.55 1.59 .061 .063 B A A 1.74 1.82 .069 A 1.59 .061 .063 SYM min. max min. max 0.4 0.6 .016 .024 C 1.4 1.6 .055 .063 B 1.93 2.13 .076 DIA .084 DIA A 2.94 3.14 .116 DIA .124 DIA D SYM min. C .072 1.55 D max BOL MILLIMETERS min. max INCHES B E BOL MILLIMETERS INCHES Cb=0.1pF F51 C Cb=0.2pF F54 D 1.47 1.67 .058 A C 1.47 1.67 .058 DIA .066 DIA D B 1.93 2.13 .076 DIA .084 DIA D A A 4.9 5.3 .193 .209 SYM min. max min. max BOL MILLIMETERS F 1.0 1.2 .039 .047 E 0.40 0.47 .016 .019 .066 D 0.61 0.66 .024 DIA .029 DIA C 1.19 1.35 .047 DIA .053 DIA B B E F INCHES A 1.70 2.00 .067 .079 2.00 2.16 .079 DIA .085 DIA SYM min. max min. max D C B 12-54 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net BOL MILLIMETER INCHES MICROWAVE SILICON COMPONENTS Case styles Cb=0.2pF F54s A D 0.36 0.46 .014 .018 C 0.84 0.94 .073 .047 Cb=0.2pF F60 A 2.00 2.16 .079 DIA .085 DIA D SYM min. max min. BOL MILLIMETERS E max INCHES 1.51 1.63 .059 .064 E 1.81 1.95 .071 .077 D 3.76 4.21 .148 .166 A B 1.19 1.35 .047 DIA .053 DIA C F D F C 1.52 1.62 .060 DIA .064 DIA B 1.93 2.13 .076 DIA .084 DIA A 2.95 3.15 .116 DIA .124 DIA SYM min. max BOL MILLIMETER B min. max INCHES C B Cb=0.25pF F60d A F 1.52 1.64 .060 .065 E 0.95 1.09 .037 .043 2.91 3.36 .115 .132 D C 1.52 1.62 .060 DIA .064 DIA B 1.93 2.13 .076 DIA .084 DIA A 2.95 3.15 .116 DIA .124 DIA E D F SYM min. max BOL MILLIMETER C min. Cb=0.12pF M208a D D B A C G 0.1 E INCHES .015 F 0.06 0.1 .0024 .004 0.55 0.65 .022 .026 D 2.5 C 1.3 1.7 .052 .068 0.95 1.35 .037 .053 A G F .004 E B max 0.4 .100 1,07 1,47 .042 DIA .058 DIA SYM min. max BOL MILLIMETER min. max INCHES B Cb=0.12pF M208c M208b Cb=0.12pF B 0.95 1.35 A .037 .053 max BOL MILLIMETERS min. 0.1 .0024 .004 D 0.55 0.65 .022 .026 C 5 B 0.95 .200 1.35 .037 .053 A 1.07 1.47 .042 DIA .058 DIA A 1.07 1.47 .042 DIA .058 DIA SYM min. 0.06 D B A B E SYM min. max C max BOL MILLIMETERS min. max INCHES INCHES E Cb=0.12pF M208d D Cb=0.12pF M208e E 0.06 0.1 .0024 .004 E 0.06 0.1 .0024 .004 D 0.55 0.65 .022 .026 D 0.55 0.65 .022 .026 C 5 B 0.95 1.35 .037 B A E D .200 C 1.35 .037 .053 B C 5 B 0.95 .200 .053 A A 1.07 1.47 .042 DIA .058 DIA A 1.07 1.47 .042 DIA .058 DIA C SYM min. E max BOL MILLIMETERS min. SYM min. max max BOL MILLIMETERS INCHES min. max INCHES C SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-55 Vol. 1 MICROWAVE SILICON COMPONENTS Case styles Cb=0.12pF M208f Cb=0.2pF S268/W1 F 0.06 0.1 .0024 .004 E 0.55 0.65 .022 .026 F E D 5 .200 C 9.8 B 10.2 0.95 1.35 .392 E .408 .037 .053 .015 .024 H 0.64 0.88 .025 .035 G 0.51 0.60 .020 .024 0.21 D 1.71 I F A B D SYM min. max min. A max G H BOL MILLIMETER 2.44 2.64 .096 DIA .104 DIA E C C 1.07 1.47 .042 DIA .058 DIA A 0.62 0.31 .008 .012 2.00 .067 .079 D A C 0.38 F B B I 3 - 48 UNC 2A 5.01 5.46 SYM min. INCHES .197 max min. BOL MILLIMETER Cb=0.11pF SMD3 A E 2.69 2.89 .106 .114 D 3.71 3.91 .146 .154 C 4.4 4.6 .173 .181 Cb=0.24pF D SMD4 B 2.19 2.39 .086 DIA .094 DIA B E .215 2.85 3.25 .112 DIA .128 DIA max INCHES Typical 0,2 Typical .008 Typical 1 Typical .039 C 0.3 0.8 .012 .031 B 2.9 3.5 .114 .138 A 2 2.3 .079 .091 max min. max A A 2.44 2.64 .096 DIA .104 DIA SYM min. E max BOL MILLIMETERS D min. SYM min. max INCHES BOL MILLIMETERS C INCHES C B E D A Typical 0,20 Typical .008 D Typical 1.20 Typical .047 C 0.3 0.8 .012 .031 B 4.70 5.2 .185 .205 A 2.5 2.8 .098 .110 SYM min. max min. max SMD8 B 4.70 5.2 .185 .205 C 0.20 0.38 .008 .015 SYM min. max min. max A C A E A Cb=0.24pF SMD6 BOL MILLIMETERS BOL MILLIMETERS INCHES INCHES B E C D B Cb=0.2pF SOT23 SOD323 H B C 1.70 .0669 G 0.20 .0078 F 0.15 .0059 E 0.05 D D F D E G 0.13 0.004 0.005 0.53 0.56 0.021 0.022 I 0.05 0.1 0.002 0.0004 1.07 1.14 0.042 0.045 .0020 G 0.43 0.46 0.017 0.018 0.30 .0118 F 1.78 2.04 0.070 0.080 C 1.10 .043 B 1.25 .049 A 2.50 .098 SYM Typical Typical H F 0.1 J H C B A K C G E H K J INCHES D 0.43 0.45 0.017 C 2.36 2.49 0.093 0.098 B 1.3 1.35 0.051 0.053 2.84 3.02 0.112 0.119 max Millimeters min. Inches max Inches A SYM BOL 12-56 Vol. 1 0.037 typ. A I BOL MILLIMETERS 0.94 typ. SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net min. Millimeters 0.020 MICROWAVE SILICON COMPONENTS Case styles SOT323 SOT143 J A J G I 2 H 0.12 .0047 D F F C K 0.12 J 0.43 .0047 .017 I 0.1 max. .004 max. G 1.90 .0075 H 0.9 .035 F 0.40 .0157 G 0.3 .012 E 0.80 .0315 F 1.3 .051 D 1.30 .051 E 0.65 .026 C 1.10 .043 D 0.3 .012 B 2.60 .102 C 2.1 .0.83 B 1.25 .043 A 1.9 .075 SYM Typical Typical G E A H E .0039 H D 1 0.10 C B 3 I B 4 max 8 .114 Typical K 2.90 Typical I A SYM BOL MILLIMETERS J INCHES BOL MILLIMETERS INCHES Cb=0.2pF TO39 G E 8.3 0.41 0.48 .016 DIA .019 DIA 8.5 .327 DIA .335 DIA G 44 46 44 46 F 0.71 0.81 .028 .032 E 9.40 10.40 .370 .409 D 12.7 .500 C 4.98 5.18 .196 .204 B 6.30 6.40 .248 .252 F 9.10 9.30 .358 DIA .366 DIA A I C A H D I H SYM min. B max BOL MILLIMETER min. max INCHES Cb=0.15pF W2 H 0.71 0.81 .028 .032 G 0.45 0.55 .020 .022 F E E H F 3 - 48 UNC - 3A 0.61 0.81 .024 .032 D 1.17 1.37 .046 DIA .054 DIA B D G C 3.40 3.60 .134 .142 B 2.46 2.66 .097 DIA .105 DIA C A 4.38 4.68 .172 .184 SYM min. A max min. max BOL MILLIMETERS INCHES SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net 12-57 Vol. 1