SEMIKRON VRSM I-FRMS (maximum values for continuous operation) VARM 10A | 10A | 10A lrav (sin. 180; Tret = 120 C, L= 10mm; f< 1 kHz) V 1,3A | 1,3A | 1.3A 100 SK1GFO1 | SK1GHO1 | - 200 SK 1 GF 02 SK 1 GH 02 SK 1 GL 02 400 SK 1 GF 04 SK 1 GH 04 SK 1 GL 04 600 SK 1 GF 06 SK 1 GH 06 SK 1 GL 06 800 - SK 1 GH 08 SK 1 GL 08 1000 - SK 1 GH 10* SK 1GL10 Symbol | Conditions SK 1 SK 1 SK1 (Units: GF GH GL IFAV Tret = 100C; L= 10mm; sin./rec. 180 14) | 142: 149 | A Tamb = 45 C; sin./rec. 180; Rihja= 75 C/W 1,05" | 1,057 | 1,057 | A lesm Ty= 25C; t=10ms 50 A Ty = 175C; t=10ms 40 A t=83ms 45 A it Ty= 25C;8,3... 10 ms 12,5 As Ty = 175 C; 8,3... 10 ms 8 As Qi Ty = 150C; lpm =5 A; 1,2 2 3 uc dir/dt = 100 A/us; IRM Vr = 100 V; max. 10 | 14 17 A ter Ty =25 C; lem = 0,5 A: | InM = 1 A; irr = 0,25 A; max. 80 | 150 300 ns tir Ty = 25 C; lpm = 2 A; dir/dt = 100 A/ us; typ. 100 500 500 ns IR Ty = 25C; Vr = Varm; max. 5 LA Ty = 150 C; Vr = Varn; typ. 400 uA Ve Ty = 25C; Ir = 1 A; max. 1,2 Vv Vito) = | Ty = 175C 0,95 V IT Ty = 175C 120 mQ Rin = |[L= 10mm 30 C/W Rihja p.c.b. 50 x 50 mm 75 C Tyj ~40...4+175 C Tstg -55...4175 C Tsolder imax. 10s,L=9mm 280 C a 5. 9,81 m/s? Ww approx. 0,5 g Case page B9- 18 E33 * Available in limited quantities Fast Recovery Rectifier Diodes SK 1 GF SK 1 GH SK 1 GL Features Axial lead diodes, taped Glass passivated silicon chip Void-free moulded piastic acc. to Underwriters Laboratory (UL) flammability classification 94 V-0 Polarity: Band denotes cathode terminal Peak inverse voltage up to 1000 V High surge current of 50 A Available with formed leads on request Typical Applications 1) 2) 3) Switched mode power supplies TV sets Inverters Ultrasonic generators For printed circuit board mounting f< 50 kHz f< 30 kHz f< 15 kHz by SEMIKRON B9-9 VR= Vaan f = 50 kHz sin./rec. 180 (D = 0.5} | 0 O Tymb,Tret 50 100 150 S200 Fig. 12 a Rated forward current vs. temperature 2 USK 1 GL Va Varm f $15 kHz sir./rec, 180 {2 = 0.6) leay Tret 1 0 Tamb,Tree 50 100 156 Ke} 200 Fig. 12 c Rated forward current vs. temperature 1000 SK 1 GF SK 1 GH SK 1 GL WA 100 0 Ty 50 100 150 SS 200 Fig. 13 Reverse current vs. junction temperature FAV Tref Oo Qo Tamb, Tret 50 Vpi V RRM f 30 kHz sin./rec. 180 (D = 0.8} 100 150 Fig. 12 b Rated forward current vs. temperature | | Cu 35pm Glass fiber reinforced P.C.B. for Rinia = 75 C/W 50 I re Lo ale 1 2 epoxy resin 60 eee fr PR Rhee 4 - Hl = A Mo ot 30} 4 I [ ~ Rtbyr | ref a | | | fy tp | fp py y oud | ClaFP EAT 5 L 10 16 20 mm 26 Fig. 14 Thermal resistance vs. lead length B9-10 by SEMIKRON SEMIKRON 101 tp 10? 103 us 104 Fig..2. Forward energy dissipation, sinusoidal 15 SK 1 GF type 180C Vp = 400V lag: O.6mA po 0.5 rr 5 -dip/dt 50 100 150 A/ps 200 Fig. 5a Recovered charge 4 pe SK | GL Ty) = 180C Vp = 400V lag = O.4mA Qe, Qo 9 -dir/dt 50 100 150 A/ys 200 Fig. 5c Recovered charge 'e A tem | a 60 | 100 mJ lens 0.3 tol tp 102 103 ps 104 Fig. 4 Forward energy dissipation, rectangular 3 SK 1 GH Tyj= 150C VR = 400 Io = 0.5MA pC: 9 -dig/dt 50 100 150 A/ys 200 Fig. 5 b Recovered charge 20 A SK 1 GF Tyj: 150C 0 OQ -dir/dt 50 100 150 A/ys 200 Fig. 6 a Peak reverse recovery current by SEMIKRON B9O-11 30 A 20 la 0 -digp/dt 50 100 160 A/us 200 Fig. 6 b Peak reverse recovery current ip Q 0 Ve 0.5 1 1.6 Vv 2 Fig. 8 Forward characteristics 7 QO O -dif/dt 50 100 180 A/ys 200 Fig. 6c Peak reverse recovery current SK 1 GF SK 1 GH SK 1 GL 0.1 t G.01 5 1 2 10 Inigy) 3 4 5 10 2 3 45 A 10 Fig. 11 Rated surge overload current to IFtov) TFAV 1 SK 1 GF SK 1 GH SK 1 GL on, ED 2 3 4 10 20 30 40 50 % 400 Fig. 10 Intermittent duty overload current B9-12 by SEMIKRON To mi