MITSUBISHI Nch POWER MOSFET | FS20VS-5 HIGH-SPEED SWITCHING USE FS20VS-5 OUTLINE DRAWING Dimensions in mm & 10.5MAX. , 45 nm tS i \ ni af esi? ra + +0.3 a ie or yy ure - te - fo fe F So gt 1.SMAX 8.6203 f [28 oj! Pal aoe 2S 1) GATE 2: DRAIN 2) SOURCE @ DRAIN @ VDSS crc c crete e eee teen eee teens 250V @rDs (ON) (MAX) crctc este e tect een ener e renner nents 0.199 WD ccc c cece eer cee eee tenet ete e tenet nee 20A TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (To = 25C) Conditions Voss Drain-source 250 Voss Gate-source ID Drain current 20 lpm Drain current 60 Po Maximum 150 Teh Channel ~55 ~ +150 T -55 ~ +150 1.2 2 ~70 MITSUBISHI ELECTRIC ELECTRICAL CHARACTERISTICS (itch = 25C) MITSUBISH! Nch POWER MOSFET FS20VS-5 HIGH-SPEED SWITCHING USE Limit: Symbol Parameter Test conditions - m_m Unit Min. Typ. Max. V (BR) DSS | Drain-source breakdown voltage | ID = 1mA, VGs = OV 250 _ _ Vv V 8A} GSS | Gate-source breaktiown voltage | iG = +100pHA, Vos = OV +30 _ _ Vv Iass Gate leakage current Vas = t25V, Vos = 0V _ _ +10 HA lpss Drain current Vbs = 250V, VGS = OV _ _ 1 mA VGS (th) Gate-source threshold voltage ID = imA, Vos = 10V 2 3 4 Vv TDS (ON) | Drain-source on-state resistance | ID = 10A, Vas = 10V 0.15 0.19 2 VDs (ON) | Drain-source on-state voltage | ID = 10A, VGs = 10V _ 15 1.9 Vv lyts | Forward transfer admittance | ID = 10A, Vos = 10V 8.5 13.0 ~ s Ciss Input capacitance _ 1460 = pF Coss Output capacitance Vos = 25V, Vas = OV, f = MHz = 280 pF Crss Reverse transfer capacitance _ 55 _ pF td (on) Turn-on delay time ~ 25 ns t Rise time __ Vpo = 150V, Ip = 10A, Vas = 10V, RGEN = Res = 502 = 30 = 488 td (off Turn-off delay time _ 150 _ ns tf Fall time _ 65 _ ns Vso Source-drain voltage Ig = 10A, Vas = OV _ 1.5 2.0 Vv Rth (ch-c) | Thermal resistance Channel to case ~ _ 0.83 CAN PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 = tw=1 a 7160 < a a 1 5 _ = 120 Z < c a c B a0 3 a z ob & = 40 Q C= 25C Sj Pulse % 50 100 150 200 23 5710' 23 57102 23 57103 2 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) Pp = 150W V6s=20V 50 T 10V Pp=d 1 Ae = =z 40 oe =< 16 a C= 25C 2 Pulse Test 2 bE b z 30 Zz 12 B20 a 8 z z < < iv 5 10 5 4 0 0 7 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) ale MITSUBISHI 2-71 , ELECTRIC DRAIN-SOQURCE ON-STATE CAPACITANCE Ciss, Coss, Crss (pF) VOLTAGE VDs (ON) (V) DRAIN CURRENT Ip (A) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Te = 25C P. Test we EG nd 5 Ow e 3 Of De ze <o a x 0A 0 4 8 19 16.20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 Te = 25C Vos = ov uise Test 32 xe Ce a 24 = ES re 16 < SE 53 8 2 << 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 103 Z 7 ay 8 = 3 oa 2 2 402 5 7 E = Wy 3h Tch = 25C 2h f= IMHz Vas = OV 23 5710923 5710123 5710223 103 DRAIN-SOURCE VOLTAGE Vps (V) MITSUBISH! Nch POWER MOSFET FS20VS-5 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 Te = 25C Ti 04 0.3 0.2 0.1 0 10-1 23 57109 23 5710' 23 57102 DRAIN CURRENT jo (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7} VDS = 10V 5 > Pulse Test 10 23 57108 23 5 7 10? DRAIN CURRENT Ip (A) SWITCHING CHARACTERISTICS (TYPICAL) Toh = 26C VbD = 150V VGS = 10V = RES = 5 7 102 109 2 3 57107 2 3 DRAIN CURRENT {p (A) 2-72 9 MITSUBISHI ELECTRIC DRAIN-SOURCE ON-STATE RESISTANCE rps (Nn) (tC) DRAIN-SOURCE ON-STATE RESISTANCE Ds (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8A) DSS (C) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE BREAKDOWN VOLTAGE V ip) pss (25C) 20 16 12 10! 7 10 NWO ON 10-1 1.4 1.2 1.0 08 0.6 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Teh = 25C lo = 20A 20 40 60 80 100 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 10V ID = 1/21D Pulse Test -60 0 50 100 150 CHANNEL TEMPERATURE Teh (C} BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Ves = OV lo = 1mA ~50 0 50 100 160 CHANNEL TEMPERATURE Teh (C) MITSUBISHI Nch POWER MOSFET FS20VS-5 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE Pulse 10-423 5710-323 5710223 5710-123 5710 23 5710' 23 57102 19-2 FORWARD CHARACTERISTICS (TYPICAL) 40 a VGS = OV _ ; Pulse Test S 32 25C Ke | a 24 c ian 3 6 QO oc 5 8 a 0 0 os 16 24 32 40 SOURCE-DRAIN VOLTAGE Vso (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 Vs = 10V Q Ip=imA 4. = 0 n w wy z3 3.0 Ow ZO 20 > + 85 ws e 1.0 Oo 0 -50 OO 50 100 150 CHANNEL TEMPERATURE Tch (C) = TRANSIENT THERMAL IMPEDANCE 2 CHARACTERISTICS 3 "01 & 5 nN 3 us 2 199 z 7 eS = 2 Pom _J = 10% i Z 0.05 co w 0.02 bey = 3 0.01 t Kc 2 = ui oO = < x - PULSE WIDTH tw (s) ae MITSUBISHI ELECTRIC 2 - 73