BC177 BC178-BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain general purpose transistors. The complementary NPN types are respectively the BC107, BC108 and BC109. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BC177 BC178 BC179 Unit V CES Collector-emitter Voltage (V BE = 0) - 50 - 30 - 25 V V CEO Collector-emitter Voltage (I B = 0) - 45 - 25 - 20 V V EBO Emitter-base Voltage (I C = 0) IC -5 V Collector Current - 100 mA - 200 mA 300 mW I CM Collector Peak Current Pt o t Total Power Dissipation at T amb 25 C T st g Storage Temperature - 65 to 175 C Tj Junction Temperature 175 C January 1989 1/6 BC177-BC178-B179 THERMAL DATA R t h j- cas e R t h j -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Ma x Ma x C/W C/W 200 500 ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol Parameter I CE S Collector Cutoff Current (V BE = 0) V CE = - 20 V V CE = - 20 V Collector-emitter Breakdown Voltage (I B = 0) I C = - 2 mA Collector-emitter Breakdown Voltage (V BE = 0) I C = - 10 A V (B R)E BO Emitter-base Breakdown Voltage (I C = 0) I E = - 10 A V CE( sat )* Collector-emitter Saturation Voltage I C = - 10 mA I C = - 100 mA I B = - 0.5 mA I B = - 5 mA Base-emitter Voltage I C = - 2 mA V CE = - 5 V Base-emitter Saturation Voltage I C = - 10 mA I C = - 100 mA I B = - 0.5 mA I B = - 5 mA Small Signal Current Gain I C = - 2 mA f = 1 kHz V CE = - 5 V V (BR)CE O * V (B R)CES VB E * V BE (s at ) hfe Test Conditions 2/6 Typ. Max. Unit - 1 - 100 - 10 nA A T amb = 150 C for BC177 for BC178 for BC179 - 45 - 25 - 20 V V V for BC177 for BC178 for BC179 - 50 - 30 - 25 V V V -5 V for for for for for * Pulsed : pulsed duration = 300 s, duty cycle = 1 %. Min. BC177 BC177 BC178 BC178 BC179 Gr. A Gr. B Gr. A Gr. B Gr. B - 550 - 75 - 200 - 250 mV mV - 640 - 750 mV - 720 - 860 125 240 125 240 240 mV mV 260 500 260 500 500 BC177-BC178-BC179 ELECTRICAL CHARACTERISTICS (continued) Symbol fT Parameter Test Conditions Min. Typ. Max. Unit Transition Frequency I C = - 10 mA f = 100 MHz V CE = - 5 V 200 MHz C CBO Collector-base Capacitance IE = 0 V CB = - 10 V 5.0 pF NF Noise Figure I C = - 0.2 mA R g = 2 k B = 200 Hz V CE = - 5 V f = 1 kHz for BC177 for BC178 for BC179 h ie Input Impedance I C = - 2 mA f = 1 kHz Reverse Voltage Ratio I C = - 2 mA f = 1 kHz Output Admittance I C = - 2 mA f = 1 kHz BC177 BC177 BC178 BC178 BC179 Gr. A Gr. B Gr. A Gr. B Gr. B 2.7 5.2 2.7 5.2 5.2 k k k k k BC177 BC177 BC178 BC178 BC179 Gr. A Gr. B Gr. A Gr. B Gr. B 2.7x10- 4 4.5x10- 4 2.7x10- 4 4.5x10- 4 4.5x10- 4 V CE = - 5 V for for for for for DC Transconductance. dB dB dB V CE = - 5 V for for for for for hoe 10 10 4 V CE = - 5 V for for for for for hre 2 2 1.2 BC177 BC177 BC178 BC178 BC179 Gr. A Gr. B Gr. A Gr. B Gr. B 25 35 25 35 35 S S S S S DC Normalized Current Gain. 3/6 BC177-BC178-B179 Collector-emitter Saturation Voltage. Normalized h Parameters. Normalized h Parameters. Collector-base Capacitance. Transition Frequency. Power Rating Chart. 4/6 BC177-BC178-BC179 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 5/6 BC177-BC178-B179 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6