Features e@ CMOS for optimum speed/power @ Windowed for reprogrammabllity High speed -20 ns (commercial) 25 ns (military) . Low power 660 mW (commercial) 770 mW (military) Super low standby power (7C261) Less than 250 mW when deselected + Fast access: 20 ns EPROM technology 100% program- mable Slim 300-mil or standard 600-mil packaging available e@ 5V + 10% Vcc, commercial and military T Y6-(3-279 CY7C261 CY7C263/CY7C264 TTL-compatible VO @ Direct replacement for bipolar PROMs Functional Description The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected, the 7C261. automatically powers down into a low-power standby mode. It is packaged in a 300-mil-wide package. The 7C263 and 7C264 are packaged in 300-mil-wide and 600-mil-wide packages respectively, and do not power down when deselected. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide in- telligent programming algorithms. 8192 x 8 Power-Switched and Reprogrammable PROM The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de- vices and offer the advantages of lower power, superior performance and pro- gramming yield. The EPROM cell re- quires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells al- low for each memory location to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that af- ter customer programming the product will meet DC and AC specification limits. Read is accomplished by placing an active LOW signal on CS. The contents of the memory location addressed by the ad- dress line (Ag - Aj2) will become avail- able on the output lines (Op ~ O07). HEE D Ba 258%bbe OO0Ob764 1 EACYP Logic Block Diagram FFF Peer erre >> nos ow Pin Configurations SOSTPAPFP SP? c261-1 LCC/PLCC (Opaque Only) Top View eget See o uss 6 nor Aged NC P14 Og pt = 19 1213 14 15161716 C261-3 Selection Guide Current ( Current (mA) 7026320 | 7026325 726420 | 7626425 3-59 726330 7C26335 | 7C26340 | 7026345 70263-55 7C26430 | 7C26435 | 7C26440 | 70264~45 | 7026455 PROMs | . |CYPRESS SEMICONDUCTOR 4BE D 256%bbe OO06785 3 EMCYP ture range specification. 2. Ta is the instant on case temperature. 3. Seethelast page of this specification for Group A subgroup testing in- formation. CY7C261 CY7C263/CY7C264 Maximum Ratings / 6 13 A 7 (Abovewhich the useful life may be impaired. Foruserguidelines, Static Discharge Voltage .......-.+-sscesseeeeere >2001V not tested.) (per MIL-STD-883, Method 3015) Storage Temperature ......... pevenees 65Cto 150C = Latch-UpCurrent ...........eeeeeseeceecscees >200mA Ambient Temperaturewith UVEXpOSUTE 2.00... cece eee eeeceeeeeeees 7258 Wsec/cem? PowerApplied ..........2ceeeerereeee 55C to +125C . Supply Voltage to Ground Potential Operating Range (Pin 24 to Pin 12)... sc cecceeereveneevers ~ 0.5V to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Vec ; vin High ZState .....cccevesecevereecace - Ny to +7.0V Commercial 0Cto + 70C 5V + 10% DC Input Voltage 2.1... esccseccseeenes 3.0V to + 7.0V Industrial] ~ 40C to + 85C 3V = 10% DC Program Voltage = (Pin 19 DIP Pin23 LCC) ......ssceveceeeeseeeeeees 13.0V | Militaryl?! 55C to + 125C 5V + 10% Electrical Characteristics Over the Operating Rangel 4] 7C26120 | 7C261-25 | 7C26130 7C263-20 | 7C263-25 | 7C263~30 7C26420 | 7C264~25 | 7C264-30 Parameters Description Test Conditions Min. | Max. | Min. | Max. ] Min. | Max. | Units Vou Output HIGH Voltage Vcc = Min, Com | 2.4 2.4 24 Vv lon = 2.0 mA Mil | 24 Vo. Output LOW Voltage Voc = Min., Com'l 0.4 0.4 0.4 Vv lo, =8mA . (6mA Mil) Mil 0.4 Vin Input HIGH Level 2.0 2.0 2.0 Vv Vit Input LOW Level 0.8 0.8 0.8 Vv Ix Input Current GND < Vin < Vcc -10}] +10 | 10 | +10 | ~-10)] +10 | pA Vep Input Diode Clamp Voltage Note 4 loz Output Leakage Current VoL < Vout < Vou: 40] +40 | -40] +40 |] -40] +40 | pA . Output Disabled los Output Short Voc = Max., ~20!-90 | -20|-90 | -20|-90] mA CircuitCurrent!*] Vout = GND . Tec Power Supply Current Voec = Max., Com! 120 120 120 | mA Vin = 2.0V Mil 140 Isp Standby Supply Voc = Max., Com'l 40 40 40 mA Current (7C261) CS> Vin - lour = 0mA Mil 50 Vpp Programming Supply Voltage 12 13 12 13 12 13 Vv Ipp Programming Supply 350 50 50 mA Current Vip Input HIGH Programming 3.0 3.0 3.0 Vv Voltage Vip Input LOW Programming 0.4 0.4 0.4 v Voltage Notes: 1, See the Ordering Information section regarding industrial tempera- 4. Seethe Introduction to CMOS PROMs section of the Cypress Data Book for general infromation on testing. 5. For test purposes, not more than one output at a time should be shorted, Short circuit test duration should not exceed 30 seconds. 3-60CYPRESS SEMICONDUCTOR SSS; = SSS SEMICONDUCTOR 4bE D ES 254%bbe OO0b76b S Eacyp ; CY7C261 CY7C263/CY7C264 Electrical Characteristics Over the Operating Rangel. 4I(continued) T=Y613-29 71C261-35 7C261-40 | 7C26145, 55 7263-35 7C26340 | 7C263~45, 55 7C26435 7C26440 | 7026445, 55 Parameters Description Test Conditions Min. | Max. | Min. | Max. | Min. | Max. | Units Vou Output HIGH Vcc = Min., Coml | 2.4 2.4 2.4 Vv . Voltage Ton = 4.0mA Mil 4 24 Vou Output LOW Vcc = Min., Com! 0.4 0.4 0.4 v Voltage To, = 16mA Mi 04 04 Vir Input HIGH Level 2.0 2.0 2.0 v Vit Input LOW Level 0.8 0.8 0.8 v Ix Input Current GND < Vin = Vcc 10 | +10 | -10 | +10 | -10 |] +10 |] pA Veo Input Diode Clamp . : Note 4 Voltage loz Output Leakage Vo < Vout < Vou: ~40 | +40 | -40 |] +40 | 40 | +40 | pA Current Output Disabled los Output Short Voc = Max., 20 | -90 | ~20 | -90 | -20 | -90 |] mA Circuit Current!) Vout = GND Ice Power Supply Voc = Max., Com'l 100 100 100 | mA Current Vin = 2.0V Mi 120 120 Isp Standby Supply Veco = Max, CS > Vay [| Com! 30 30 30 mA Current (7C261) Tout = OmA Mil 30 30 Vpp Programming 12 13 12 13 12 13 Vv Supply Voltage Ipp Programming 50 50 50 mA Supply Current Vip Input HIGH 3.0 3.0 3.0 Vv Programming Voltage Vite Input LOW 0.4 0.4 0.4 Vv Programming Voltage Capacitance!) , Parameters Description Test Conditions Max. Units Cn InputCapacitance Ta = 25C, f = 1 MHz, 10 pF Cour OutputCapacitance Voc = 5.0V 10 pF PROMs iacYP A CY7C261 CY7C263/CY7C264 j 2 CYPRESS | ESS SEMICONDUCTOR WBE D MM 258%bb2 0006787 7 EACYP Ses SEMICONDUCTOR AC Test Loads and Waveforms(1 = Y 6 /3 - a q Test Load for 20 through 30 speeds R1 500 Rt 5009 (658Q MIL) (6580 MIL) 5V 0 5V apy i ure R29330 R29990 GND 30 al * (4032 MIL) Ll (4032 MIL) <5ns iNcLUDING-L Lk INcLUDING-L = -L. JIGAND = == JIGAND = == SCOPE SCOPE costa c2sts (a) (b) High Z Load ! Equivatentto: THEVENIN EQUIVALENT Rry 200.2. . OUTPUT O-vwwe 2500. MIL Test Load for 35 through --55 speeds Ri 2502 Ri 2502 5V ow 5V 0 awn OUTPUT , OUTPUT orl R2 1672 lL R2 1672 INCLUDING INCLUDING Lb JIG AND ~ = JIG AND ~ = SCOPE SCOPE G261-6 (c) (d) High Z Load t Equivalentto: THEVENIN EQUIVALENT Ry 1002 QUTPUT O--wwv-)_ 2.0 Switching Characteristics Overthe Operating Rangel 3: 41 ~ 7C261~20 7C26125 7C261-30 70261-35 7C263-20 | 7C263-25 | 7C263-30 | 7C263-35 7026420 71026425 7C026430 70264-35 Parameters Description Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. ] Units taa , Address to Qutput Valid 20 25 30 35 ns tHZCS1 Chip Select Inactive to High Z . 12 15 20 20 os tyzcs2 Chip Select Inactive to High Z(7C261) 20 25 35 35 ns tacsi Chip Select Active to Output Valid 12 15 20 20 ns tacs2 Chip Select Active to Output Valid (7C261) 20 25 35 40 ns teu Chip Select Active to Power-Up(7C261) 0 0 0 0 ns tpp Chip Select Inactive to Power-Down (7C261) 20 25 30 35 ns 3-622A, 2 PROMs "| CYPRESS SEMICONDUCTOR WBE D MM 2549662 0006748 9 Ecyp CY7C261 CY7C263/CY7C264 Switching Characteristics Over the Operating Range! 3: 4] (continued) 7 4 6 f 3 a ] 726140 70261-45 70261-55 7C26340 710263-45 7026355 7C26440 70264~45 70264-55 Parameters Description Min. Max. Min. Max, Min. |- Max. | Units taa Address to Output Valid 40 45 55 ns tHzcs1 Chip Select Inactive to High Z 25 30 35 ns tuzcs2 Chip Select Inactive to High Z (7C261) 45 45 55 ns tacst Chip Select Active to Output Valid 25 30 35 ns tacs2 Chip Select Active to Output Valid (7C261) 45 45 55 ns teu Chip Select Active to Power-Up(7C261) 0 0 0 ns tep Chip Select Inactive to Power-Down (7C261) 40 45 55 ns Switching Wayveformsl4] . Ht- top teu sure? 50% 50% CURRENT A -A dads x | cs 7 N re tan tizcs >} tacs 03-6 x 0261-7 Erasure Characteristics Operating Modes Wavelengths of light less than 4000 angstroms begin to erase the devices in the windowed package. For this reason, an opaque label should be placed over the window if the PROM is exposed to sun- light or fluorescent lighting for extended periods of time. The recommended dose of ultraviolet light for erasure is a wave- lengthof2537 angstroms fora minimum dose (UV intensity multi- plied by exposure time) or 25 Wsec/cm?, For an ultraviolet lamp with a 12 mW/cm? power rating. the exposure time would be ap- proximately45 minutes. The 7C261 or 7C263 needs to be within 1 inch of the lamp during erasure. Permanent damage may result if the PROM is exposed to high-intensity UV light for an extended period of time. 7258 Wsec/cm? is the recommended maximum dosage. Read Read is the normal operating mode for a programmed device. In this mode, all signals are normal TTL levels. The PROM is ad- dressedwitha 13-bit field, achipselect, (active LOW), isappliedto the CS pin, and the contents of the addressed location appear on the data out pins. Program, Program Inhibit, Program Verify These modes are entered by placing a high voltage Vpp on pin 19, with pins 18 and 20set to Vip In this state, pin 21 becomesa latch signal, allowing the upper 5 address bits to be latched into an on- board register, pin 22 becomes an active LOW program (PGM) signaland pin 23 becomesan active LOW verify (VFY) signal. Pins 22and 23 should never be active LOW at the same time. The PRO- GRAM mode exists when PGM is LOW, and VFY is HIGH. The verify mode exists when the reverse is true, PGM HIGH and VFY LOWand the program inhibit mode isentered with both PGM and VFY HIGH. Program inhibit is specifically provided to allow data to be placed on and removed from the data pins without conflict. Bon rn arn et ee eeTe et a "awe, CYPRESS SEMICONDUCTOR WBE D MM 258%bbe 0006789 O Eacyp CY7C261 See CY7C263/CY7C264 CYPRESS SS SEMICONDUCTOR Table 1. Made Selection Pin Function(6.7] 7- Y 6 / 3 - 2 7 Read or Output Disable An Ay Ato Ay Ag cs O7 Oo Mode | Program NA Vpp LATCH PGM VEY cs D7 - Do Read Av Au Ato Ag Ag Vu O07 Oo Output Disable Ay Any Ajo Ag Ag Viz HighZ Program Virp Vpp Vip Virp Vinp Vip D7-Do Program Inhibit Vitp Vpp Virp Vine Vip Virp HighZ Program Verify Virp Vpp Vip Vip Virp Vip O07 ~ Oo Blank Check Vuap Vpp Vip Vinp Vip Vine QO; ~ Oo Notes: 6. X= dont care but not to exceed Voc 5%. ~ 7. Addresses AgAy2 must be latched through lines Ag Aq in program- ming modes. DIP/Flatpack LCC/PLCC (Opaque only) Top View Top View Veo = WF ere Sl Paw 4.3 2.4 2827 28 LATCH 5 25 LATCH Gs 6 24 Vpp 7 23 22 NA 5 2i 07 10 70263 20 De 11 i9 Ds 1213 14 15 1617 18 Dy : Dg c261-9 C261~8 Figure 1, Programming Pinouts Programming Information Programmingsupport is available from Cypress as well as from a number of third-party software vendors, For detailed program- minginformation, including a listing of software packages, please see the PROM Programming Informationlocatedat theendofthis section. Programming algorithms can be obtained from any Cy- pressrepresentative. 3-64NORMALIZED log NORMALIZED ACCESS TIME a, CY7C261 CY7C263/CY7C264 Typical DC and AC Characteristics 7 - 46 13 a q NORMALIZED SUPPLY CURRENT NORMALIZED SUPPLY CURRENT NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE vs, AMBIENT TEMPERATURE vs, SUPPLY VOLTAGE 1.6 1.2 12 lu 1.4 z= nan B14 Q 1.0 _ wy a a pace! 1.2 ay 9 aA Oo 7 @ 1.0 a 08 Za Ta = 25C 2 09 3 o6 08 f= fax N 5 Ta= 25C 06 | 08 = 04 I 40. 45 60 65 60 55 25 125 40 45 50 55 #60 SUPPLY VOLTAGE (VY) AMBIENT TEMPERATURE (C) SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME OUTPUT SOURCE CURRENT TYPICAL ACCESS TIME CHANGE ys. TEMPERATURE __ __ 8. VOLTAGE vs, OUTPUT LOADING 16 ~ 60 30.0 50 14 Gi e = 40 E 20.0 1.2 5 < __ | 9 30 ~ 16.0 1.0 4 5 5 : 20 @ 10.0 08 10 : Voc = 4.5V & 5.0 Ta = 25C 06 5 Oo 0.0 55 25 125 0. 10 20 30 40 0 200 400 600 800 1000 AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) CAPACITANCE (pF) OUTPUT SINK CURRENT vs, OUTPUT VOLTAGE qe 176 E ~ 160 fi Gf 425 5 @ 100 id 2 75 Voc = 5.0V 5 50 Ta = 25C Ee 2 0 00 10 20 30 40 OUTPUT VOLTAGE (Vy) 3-65 4BE D Ea 254%bbe 0006790 7 EaCYP PROMs ie+ eee CYPRESS SEMICONDUCTOR HEE D 2549bb2 0006791 9 EMCYP =>. CY7C261 =a CY7C263/CY7C264 SS SEMICONDUCTOR Zz . Information! T J. 6 13 a 7d Code Code LPP ap sp ap ep pada ep eae ay ap a rg bg de a ee taeTe mmameemae me mene SN AMANELLR BO Od 6 alk a Malahat escheat : CYPRESS SEMICONDUCTOR a bE D Bi 258%bbe 0006792 O Eacyp t CY7C261 ae T Y6-13-2Q7 CY7C263/CY7C264 ==> SEMICONDUCTOR Ordering Information (continued)[& MILITARY SPECIFICATIONS Group A Subgroup Testing Code DC Characteristics Parameters Subgroups Vou 1,2,3 Voi 1, 2,3 Vig 1, 2,3 Vu. 1,2,3 Ix 1,2,3 loz 1,2,3 Icc 1,2,3 Ispll 1,2,3 Switching Characteristics Parameters Subgroups taa 7, 8, 9, 10, 11 tacsill 7, 8,9, 10, 11 tacsal!4l 7,8, 9, 10, 11 SMD Cross Reference Number Suffix Net 5962-87515 OSKX | CY7C261-45TMB 5962-87515 OSLX | CY7C26145WMB 5962-87515 0S3X =| CY7C261-45QMB 5962-87515 O6KX | CY7C261~S55TMB = 5962-87515 O6LX | CY7C261-5SWMB 8. Most of these products are available in industrial temperature range. 5962-87515 063 C7C261-55QMB Contact a Cypress representative for specifications and product avail- ability, 9. 7C261 only. 10. 7C263 and 7C264 only. Document #: 38~00005-H. PROMs a