AO4486 100V N-Channel MOSFET General Description Product Summary The AO4486 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 4.2A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 79m RDS(ON) (at VGS = 4.5V) < 90m 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D Bottom View D D D G G S S S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current C Units V 20 V 4.2 ID TA=70C Maximum 100 3.4 A IDM 31 Avalanche Current C IAS, IAR 14 A Avalanche energy L=0.1mH C TA=25C EAS, EAR 10 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: Sep 2010 3.1 PD TA=70C TJ, TSTG Symbol t 10s Steady-State Steady-State W 2 RJA RJL www.aosmd.com -55 to 150 Typ 31 59 16 C Max 40 75 24 Units C/W C/W C/W Page 1 of 6 AO4486 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V 100 1 TJ=55C Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 31 VGS=10V, ID=3A TJ=125C VGS=4.5V, ID=3A 100 nA 2.2 2.7 V 62.5 79 121 151 68.5 90 m 1 V 3.5 A A gFS Forward Transconductance VDS=5V, ID=3A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Units A 5 VGS(th) Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IGSS RDS(ON) Typ m S 620 778 942 pF VGS=0V, VDS=50V, f=1MHz 38 55 81 pF 13 24 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.45 2.2 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 16.3 20 nC Qg(4.5V) Total Gate Charge 6.4 8.1 10 nC 2.2 2.8 3.4 nC 2.4 4.1 5.8 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=50V, ID=3.0A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3A, dI/dt=500A/s 14 21 28 Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/s 65 94 123 VGS=10V, VDS=50V, RL=16.7, RGEN=3 6 ns 2.5 ns 21 ns 2.4 ns ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2010 www.aosmd.com Page 2 of 6 AO4486 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V VDS=5V 4.5V 15 3.5V ID(A) ID (A) 15 10 5 10 125C 5 VGS=3V 25C 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2.8 Normalized On-Resistance 100 90 RDS(ON) (m ) 1 VGS=4.5V 80 70 VGS=10V 60 2.4 VGS=10V ID=3A 2 17 5 VGS=4.5V ID=3A 2 10 1.6 1.2 0.8 50 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 150 1.0E+02 ID=3A 1.0E+01 130 40 125C 110 IS (A) RDS(ON) (m ) 1.0E+00 90 125C 1.0E-01 1.0E-02 25C 1.0E-03 25C 70 1.0E-04 1.0E-05 50 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep 2010 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4486 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 1000 VDS=50V ID=3A Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 800 600 400 200 0 Coss 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 100.0 100.0 TA=100C TA=25C 10.0 TA=125C 10s RDS(ON) limited 10.0 100s ID (Amps) IAR (A) Peak Avalanche Current Crss 1.0 1ms 0.1 TA=150C 10ms TJ(Max)=150C TA=25C DC 10s 0.0 1.0 1 0.1 10 100 1000 Time in avalanche, tA ( s) Figure 9: Single Pulse Avalanche capability (Note C) 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 0: Sep 2010 www.aosmd.com Page 4 of 6 AO4486 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=75C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep 2010 www.aosmd.com Page 5 of 6 AO4486 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Sep 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6