AO4486
100V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 4.2A
R
DS(ON)
(at V
GS
=10V) < 79mΩ
R
DS(ON)
(at V
GS
= 4.5V) < 90mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
The AO4486 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
.This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
100V
Drain-Source Voltage
100
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Gate-Source Voltage
3.4
31
mJ
Junction and Storage Temperature Range -55 to 150 °C
2
V±20
T
A
=25°C
T
A
=70°C
Avalanche Current
C
4.2
Power Dissipation
B
P
D
Units
Thermal Characteristics
Parameter Typ Max
Avalanche energy L=0.1mH
C
Pulsed Drain Current
C
Continuous Drain
Current
T
A
=70°C
°C/W
°C/W59 40
A
I
D
10 A14
°C/W
W
R
θJA
V
Drain-Source Voltage
100
31
24
Maximum Junction-to-Ambient
A
T
A
=25°C 3.1
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
A D
16 75
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
Rev 0: Sep 2010
www.aosmd.com Page 1 of 6
AO4486
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.6 2.2 2.7 V
I
D(ON)
31 A
62.5 79
T
J
=125°C 121 151
68.5 90 mΩ
g
FS
20 S
V
SD
0.74 1 V
I
S
3.5 A
C
iss
620 778 942 pF
C
oss
38 55 81 pF
C
rss
13 24 35 pF
R
g
0.7 1.45 2.2 Ω
Q
g
(10V) 13 16.3 20 nC
Q
g
(4.5V) 6.4 8.1 10 nC
Q
gs
2.2 2.8 3.4 nC
Q
gd
2.4 4.1 5.8 nC
t
D(on)
6 ns
t
2.5
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
=10V, V
=50V, R
=16.7
Ω
,
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=50V, I
D
=3.0A
Gate Source Charge
R
DS(ON)
Static Drain-Source On-Resistance mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=3A
V
GS
=4.5V, I
D
=3A
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=3A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=50V, f=1MHz
SWITCHING PARAMETERS
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Gate-Body leakage current
Forward Transconductance
Gate Drain Charge
Total Gate Charge
t
r
2.5
ns
t
D(off)
21 ns
t
f
2.4 ns
t
rr
14 21 28 ns
Q
rr
65 94 123 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=3A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=50V, R
L
=16.7
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=3A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0: Sep 2010 www.aosmd.com Page 2 of 6
AO4486
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
50
60
70
80
90
100
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1.2
1.6
2
2.4
2.8
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=3A
VGS=10V
ID=3A
25°C
125
°
C
V
=5V
VGS=4.5V
VGS=10V
0
5
10
15
20
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3V
4.5V
10V
3.5V
40
0
5
10
15
20
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
50
60
70
80
90
100
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25
°
C
125
°
C
0.8
1.2
1.6
2
2.4
2.8
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=3A
VGS=10V
ID=3A
50
70
90
110
130
150
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125
°
C
V
=5V
VGS=4.5V
VGS=10V
ID=3A
25°C
125
°
C
0
5
10
15
20
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3V
4.5V
10V
3.5V
Rev 0: Sep 2010 www.aosmd.com Page 3 of 6
AO4486
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 20 40 60 80 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=50V
ID=3A
0.0
0.1
1.0
10.0
100.0
0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10ms
1.0
10.0
100.0
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
0
2
4
6
8
10
0 5 10 15 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 20 40 60 80 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=50V
ID=3A
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10ms
1.0
10.0
100.0
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
Rev 0: Sep 2010 www.aosmd.com Page 4 of 6
AO4486
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
Rev 0: Sep 2010 www.aosmd.com Page 5 of 6
AO4486
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev 0: Sep 2010 www.aosmd.com Page 6 of 6