4151P–AERO–11/12
Features
•Operating Voltage: 5V
•Access Time: 30, 45 ns
•Very Low Power Consumption
–Active: 600 mW (Max)
–Standby: 1 µW (Typ)
•Wide Temperature Range: -55⋅C to +125⋅C
•400 Mils Width Packages: FP32 and SB32
•TTL Compatible Inputs and Outputs
•Asynchronous
•No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2@125°C
•Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019
•QML Q and V with SMD 5962-89598
•ESCC with Specification 9301/047
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
PRF 38535 or ESCC 9000.
Rad. Tolerant
128Kx8, 5-Volt
Very Low Power
CMOS SRAM
M65608E
2
4151P–AERO–11/12
M65608E
Block Diagram
Pin Configuration
32-lead DIL side-brazed 400 MILS
32-lead Flatpack 400 MILS
14
10
6
13
12
11
9
8
7
5
4
3
2
1
19
23
27
20
21
22
24
25
26
28
29
30
31
32
I/O0
A0
A1
A2
A3
A4
A5
A6
A7
A12
A14
A16
NC
I/O5
I/O6
I/O7
A10
A11
A8
A13
CS2
VCC
OE
CS1
16
15
17
18
GND
I/O2
I/O1
I/O3
I/O4
A9
WE
A15
3
4151P–AERO–11/12
M65608E
Pin Description
Table 1. Pin Names
Table 2. Truth Table
Note: L = low, H = high, X = H or L, Z = high impedance.
Names Description
A0 - A16 Address inputs
I/O0 - I/O7 Data Input/Output
CS1 Chip select 1
CS2 Chip select 2
WE Write Enable
OE Output Enable
VCC Power
GND Ground
CS1 CS2 WEOE Inputs/ Outputs Mode
HXXX Z Deselect/
Power-down
XLXX Z Deselect/Power-down
L H H L Data Out Read
L H L X Data In Write
LHHH Z Output Disable
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4151P–AERO–11/12
M65608E
Electrical Characteristics
Absolute Maximum Ratings
Military Operating Range
Recommended DC Operating Conditions
Capacitance
Note: Guaranteed but not tested.
Supply voltage to GND potential: ........................ -0.5V + 7.0V
Voltage range on any input: ............ GND - 0.5V to VCC + 0.5
Voltage range on any ouput: ........... GND - 0.5V to VCC + 0.5
Storage temperature: ..................................... -65⋅C to +150⋅C
Output Current from Output Pins: ................................ 20 mA
Electrostatic Discharge Voltage
(MIL STD 883D method 3015): .................................. > 2000V
*NOTE: Stresses beyond those listed under "Abso-
lute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress
rating only and functional operation of the
device at these or any other conditions
beyond those indicated in the operational
sections of this specification is not implied.
Exposure between recommended DC
operating and absolute maximum rating
conditions for extended periods may
affect device reliability.
Operating Voltage Operating Temperature
5V + 10% -55⋅C to + 125⋅C
Parameter Description Minimum Typical Maximum Unit
VCC Supply voltage 4.5 5.0 5.5 V
GND Ground 0.0 0.0 0.0 V
VIL Input low voltage GND - 0.5 0.0 0.8 V
VIH Input high voltage 2.2 – VCC + 0.5 V
Parameter Description Minimum Typical Maximum Unit
Cin(Note:) Input low voltage ––8pF
Cout(Note:) Output high voltage ––8pF
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4151P–AERO–11/12
M65608E
DC Parameters
DC Test Conditions TA = -55°C to + 125°C; Vss = 0V; VCC = 4.5V to 5.5V
Consumption
Symbol Description Minimum Typical Maximum Unit
IIX (1)
1. GND < Vin < VCC, GND < Vout < VCC Output Disabled.
Input leakage current -1 – 1 µA
IOZ(1) Output leakage current -1 – 1 µA
VOL (2)
2. VCC min. IOL = 8 mA
Output low voltage ––0.4V
VOH (3)
3. VCC min. IOH = -4 mA.
Output high voltage 2.4 – – V
Symbol Description 65608E-30 65608E-45 Unit Value
ICCSB (1)
1. CS1 > VIH or CS2 < VIL and CS1 < VIL.
Standby supply current 2 2 mA max
ICCSB1 (2)
2. CS1 > VCC - 0.3V or, CS2 < GND + 0.3V and CS1 < 0.2V.
Standby supply current 300 300 µA max
ICCOP (3)
3. F = 1/TAVAV, Iout = 0 mA, WE = OE = VIH, Vin = GND or VCC, VCC max.
Dynamic operating current 110 100 mA max
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4151P–AERO–11/12
M65608E
AC Parameters
AC Test Conditions
Input Pulse Levels: ................................................................................................. GND to 3.0V
Input Rise/Fall Times: .......................................................................................................... 5 ns
Input Timing Reference Levels: .......................................................................................... 1.5V
Output loading IOL/IOH (see Figure 1 and Figure 2) ...................................................... +30 pF
AC Test Loads Waveforms
Figure 1 Figure 2 Figure 3
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4151P–AERO–11/12
M65608E
Data Retention Mode
Atmel CMOS RAM’s are designed with battery backup in mind. Data retention voltage and sup-
ply current are guaranteed over temperature. The following rules ensure data retention:
1. During data retention chip select CS1 must be held high within VCC to VCC -0.2V or,
chip select CS2 must be held down within GND to GND +0.2V.
2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, mini-
mizing power dissipation.
3. During power up and power-down transitions CS1 and OE must be kept between VCC +
0.3V and 70% of VCC, or with CS2 between GND and GND -0.3V.
4. The RAM can begin operation > TR ns after VCC reaches the minimum operation volt-
ages (4.5V).
Timing
Data Retention Characteristics
Notes: 1. TAVAV = Read Cycle Time
2. CS1 = VCC or CS2 = CS1 = GND, Vin = GND/VCC, this parameter is only tested at
VCC = 2V.
3. Parameters guaranteed but not tested
Parameter Description Minimum
Typical
TA = 25 ⋅C Maximum Unit
VCCDR VCC for data retention 2.0 – – V
TCDR Chip deselect to data retention time 0.0 – – ns
TR Operation recovery time TAVAV(1) ––ns
ICCDR1 Data retention current at 2.0V –0.1150µA
ICCDR2(2) Data retention current at 3.0V –0.2200µA
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4151P–AERO–11/12
M65608E
Write Cycle
Note: 1. Parameters guaranteed, not tested, with output loading 5 pF.
Write Cycle 1 WE Controlled, OE High During Write
Symbol Parameter 65608-30 65608-45 Unit Value
TAVAW Write cycle time 30 45 ns min
TAVWL Address set-up time 00nsmin
TAVWH Address valid to end of write 22 35 ns min
TDVWH Data set-up time 18 20 ns min
TE1LWH CS1 low to write end 22 35 ns min
TE2HWH CS2 high to write end 22 35 ns min
TWLQZ Write low to high Z(1) 815nsmax
TWLWH Write pulse width 22 35 ns min
TWHAX Address hold from to end of write 00nsmin
TWHDX Data hold time 00nsmin
TWHQX Write high to low Z(1) 00nsmin
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4151P–AERO–11/12
M65608E
Write Cycle 2 WE Controlled, OE Low
Write Cycle 3 CS1 or CS2 Controlled
Note: The internal write time of the memory is defined by the overlap of CS1 Low and CS2 High and WE
Low. Both signals must be actived to initiate a write and either signal can terminate a write by
going inactived. The data input setup and hold timing should be referenced to the active edge of
the signal that terminates the write. Data out is high impedance if OE = VIH.
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4151P–AERO–11/12
M65608E
Read Cycle
Note: 1. Parameters Guaranteed, not tested, with output loading 5 pF.
Symbol Parameter 65608-30 65608-45 Unit Value
TAVAV Read cycle time 30 45 ns min
TAVQV Address access time 30 45 ns max
TAVQX Address valid to low Z(1) 55nsmin
TE1LQV Chip-select1 access time 30 45 ns max
TE1LQX CS1 low to low Z(1) 33nsmin
TE1HQZ CS1 high to high Z(1) 15 20 ns max
TE2HQV Chip-select2 access time 30 45 ns max
TE2HQX CS2 high to low Z(1) 33nsmin
TE2LQZ CS2 low to high Z(1) 15 20 ns max
TGLQV Output Enable access time 12 15 ns max
TGLQX OE low to low Z(1) 00nsmin
TGHQZ OE high to high Z(1) 815nsmax
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4151P–AERO–11/12
M65608E
Read Cycle 1 Address Controlled (CS1= OE Low, CS2=WE High)
Read Cycle 2 CS1 Controlled (CS2=WE High)
Read Cycle 3 CS2 Controlled (WE High, CS1 Low)
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4151P–AERO–11/12
M65608E
Ordering Information
Note: 1. Contact Atmel for availability.
Part Number Temperature Range Speed Package Flow
MMC9-65608EV-30-E(1) 25⋅°C 30 ns SB32.4 Engineering Samples
MMDJ-65608EV-30-E 25⋅°C 30 ns FP32.4 Engineering Samples
5962-8959847QZC -55⋅ to +125⋅°C 30 ns SB32.4 QML Q
5962-8959847QTC -55⋅ to +125⋅°C 30 ns FP32.4 QML Q
5962-8959818MZC -55⋅ to +125⋅°C 45 ns SB32.4 QML Q
5962-8959818MTC -55⋅ to +125⋅°C 45 ns FP32.4 QML Q
5962-8959847VZC -55⋅ to +125⋅°C 30 ns SB32.4 QML V
5962-8959847VTC -55⋅ to +125⋅°C 30 ns FP32.4 QML V
5962-8959818VZC -55⋅ to +125⋅°C 45 ns SB32.4 QML V
5962-8959818VTC -55⋅ to +125⋅°C 45 ns FP32.4 QML V
930104703 -55⋅ to +125⋅°C 30 ns SB32.4 ESCC
930104704 -55⋅ to +125⋅°C 30 ns FP32.4 ESCC
930104701 -55⋅ to +125⋅°C 45 ns SB32.4 ESCC
930104702 -55⋅ to +125⋅°C 45 ns FP32.4 ESCC
MM065608EV-30-E 25⋅°C 30 ns Die Engineering Samples
5962-8959847Q6A -55⋅ to +125⋅°C 30 ns Die QML Q
5962-8959847V6A -55⋅ to +125⋅°C 30 ns Die QML V
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4151P–AERO–11/12
M65608E
Package Drawings
32-lead Flat Pack 400 Mils
MM
Min Max INCH
Min Max
A
A1
A2
D
D1
E1
E2
2.16 2.66
0.41 0.47
A
A1
A2
D
D1
H
E
E1
LL
e
e1
b1
c
BRAZE
Q
E2
E3
SS1
S2
b
0.13
20.63 21.03
20.11 20.27
b1
c0.080.18
E3
9.70 9.86
E10.26 10.56
6.96 7.26
8.26 9.02
b0.38
0.48
0.70
MM
Min Max INCH
Min Max
e
L
H
Q
S
S1
1.19 1.35
e1 18.92 19.18
6.995 8.495
25.6 26.2
0.68 0.84
S2
1.14
0.13
0.76 1.02
T
T0.08
T
U
U1.27
0.085 0.105
0.016 .018
0.005
0.812 0.828
0.792 0.798
0.003 0.007
0.382 0.388
0.404 0.416
0.274 0.286
0.325 0.355
0.015 0.019
0.027
0.047 0.053
0.745 0.755
0.275 0.334
1.007 1.031
0.027 0.033
0.045
0.005
0.030 0.040
0.003
0.05
INDEX MARK
=1.27x15 =0.05x15
R0.76 0.030
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4151P–AERO–11/12
M65608E
Package Drawings
32-lead Side Braze 400 Mils
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4151P–AERO–11/12
M65608E
Document Revision History
Changes from Rev. L to Rev. M
1. Change in “Consumption” on page 5. ICCOP.
Changes from Rev. M to Rev. N
1. Update of footnotes under “Data Retention Characteristics” table
2. Update of Absolute Maximum Ratings section
Changes from Rev. N to Rev. O
1. Update of “Ordering Information” section
2. Correction of typo erros in the note of “Write Cycle 3” section
3. Addition of headlines in pictures of “Read Cycle” section
4. Update of features section
5. Correction of typo error in the write signal, in the pin configuration section : W
replaced by WE
Changes from Rev. O to Rev. P
1. 32-lead Flat Pack package drawing updated on page 13. An index mark is now
printed on the top lid to identify the pin n° 1.
4151P–AERO–11/12
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