FFSB20120A Silicon Carbide Schottky Diode 1200 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1., 3. Cathode 2. Anode Schottky Diode Features * * * * * * * Max Junction Temperature 175C Avalanche Rated 200 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 2 D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ MARKING DIAGRAM Applications * General Purpose * SMPS, Solar Inverter, UPS * Power Switching Circuits $Y&Z&3&K FFSB 20120A $Y &Z &3 &K FFSB20120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2018 May, 2018 - Rev. 1 1 Publication Order Number: FFSB20120A/D FFSB20120A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 1200 V Single Pulse Avalanche Energy (Note 1) 200 mJ Continuous Rectified Forward Current @ TC < 157C 20 A Symbol VRRM EAS IF Continuous Rectified Forward Current @ TC < 135C IF, Max Non-Repetitive Peak Forward Surge Current 32 TC = 25C, 10 ms 1190 A TC = 150C, 10 ms 990 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 135 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 74 A Ptot Power Dissipation TC = 25C 333 W TC = 150C TJ, TSTG Operating and Storage Temperature Range 55 W -55 to +175 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 200 mJ is based on starting TJ = 25C, L = 0.5 mH, IAS = 29 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.45 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 20 A, TC = 25C - 1.45 1.75 V IF = 20 A, TC = 125C - 1.7 2.0 IF = 20 A, TC = 175C - 2.0 2.4 VR = 1200 V, TC = 25C - - 200 VR = 1200 V, TC = 125C - - 300 VR = 1200 V, TC = 175C - - 400 Total Capacitive Charge V = 800 V - 120 - nC Total Capacitance VR = 1 V, f = 100 kHz - 1220 - pF VR = 400 V, f = 100 kHz - 111 - VR = 800 V, f = 100 kHz - 88 - Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number FFSB20120A Top Marking Package Shipping FFSB20120A D2PAK-3 800 / Tape & Reel (Pb-Free / Halogen Free) www.onsemi.com 2 FFSB20120A TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) 1 10 TJ = -55 oC TJ = 25 oC TJ = 75 oC 16 IR, REVERSE CURRENT ( mA) IF, FORWARD CURRENT (A) 20 TJ = 125 oC 12 TJ = 175 oC 8 4 0 10 TJ = 175 oC -1 10 TJ = 125 oC TJ = 75 oC -2 10 TJ = 25 oC 0 0.0 0.5 1.0 1.5 2.0 2.5 10 3.0 200 VF, FORWARD VOLTAGE (V) PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) 800 1000 1200 350 D = 0.1 200 D = 0.2 D = 0.3 D = 0.5 50 D = 0.7 0 25 D=1 50 75 100 125 150 300 250 200 150 100 50 0 25 175 50 75 100 125 150 175 o TC, CASE TEMPERATURE (C) o TC, CASE TEMPERATURE (C) Figure 3. Current Derating Figure 4. Power Derating 150 5000 125 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 600 Figure 2. Reverse Characteristics 250 100 400 VR, REVERSE VOLTAGE (V) Figure 1. Forward Characteristics 150 TJ = -55 oC -3 100 75 50 25 0 0 200 400 600 800 1000 100 50 1000 0.1 1 10 100 1000 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSB20120A TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) 40 30 20 10 0 0 200 400 600 800 1000 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance Stored Energy r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE EC, CAPACITIVE ENERGY ( mJ) 50 2 1 DUTY CYCLE-DESCENDING ORDER 0.1 0.01 0.05 0.01 0.1 0.2 PDM 0.5 t1 t2 0.02 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 0.45 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.001 SINGLE PULSE 0.0001 -6 10 -5 10 -4 -3 10 10 -2 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 -1 10 1 FFSB20120A TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD - t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t FFSB20120A PACKAGE DIMENSIONS D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ ISSUE B B E2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CHAMFER OPTIONAL 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.005 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AT DATUM H. 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN DIMENSIONS E, L1, D1 AND E1. 6. OPTIONAL MOLD FEATURE A A E SEATING PLANE L1 c2 NOTE 3 A D1 L1 D H DETAIL C E1 0.10 L2 e 2X TOP VIEW b 0.10 B A B SEATING PLANE M A c NOTE 6 M VIEW A-A SIDE VIEW M B A M H GAUGE PLANE L3 A1 L M DETAIL C DIM A A1 b c c2 D D1 E E1 e H L L1 L2 L3 M VIEW A-A OPTIONAL CONSTRUCTIONS RECOMMENDED SOLDERING FOOTPRINT* 0.436 0.366 0.653 2X 0.169 2X 0.063 0.100 PITCH DIMENSIONS: INCHES *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 INCHES MIN MAX 0.160 0.190 0.000 0.010 0.020 0.039 0.012 0.029 0.045 0.065 0.330 0.380 0.260 ---- 0.380 0.420 0.245 ---- 0.100 BSC 0.575 0.625 0.070 0.110 ---- 0.066 ---- 0.070 0.010 BSC 0 8 MILLIMETERS MIN MAX 4.06 4.83 0.00 0.25 0.51 0.99 0.30 0.74 1.14 1.65 8.38 9.65 6.60 ---- 9.65 10.67 6.22 ---- 2.54 BSC 14.60 15.88 1.78 2.79 ---- 1.68 ---- 1.78 0.25 BSC 0 8 FFSB20120A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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