SRANSYS MMBT4126 ELECTRONICS LIMITED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4124) SOT-28 Ideal for Medium Power Amplification and | joa Dim_| Min | Max Switching [c] a A 0.37 | 0.51 B 1.19 1.40 TOP VIEW b Cc 2.10 | 2.50 Mechanical Data EF] Fy t D | 089 | 4.05 Case: SOT-23, Molded Plastic =| koe 7 E | 045 | 0.61 Terminals: Solderable per MIL-STD-202, |e G 1.78 | 2.05 Method 208 Wo H 2.65 | 3.05 Terminal Connections: See Diagram J 0.013 | 0.15 . M Marking: K2B ta aah +i Kk | oso | 1.10 Weight: 0.008 grams (approx.) J L e L 045 | 061 M 0.076 | 0.178 All Dimensions in mm Maximum Ratings @ Ta= 25 C unless otherwise specified Characteristic Symbol MMBT4126 Unit Collector-Base Voltage VcBo -25 Vv Collector-Emitter Voltage VcEO -25 Vv Emitter-Base Voltage VeBo -4.0 V Collector Current - Continuous (Note 1) Ic -200 mA Power Dissipation (Note 1) Pg 350 mw Thermal Resistance, Junction to Ambient (Note 1) R va 357 KW Operating and Storage and Temperature Range Tj, Tste -55 to +150 Cc Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s,dutycycle 2%. Electrical Characteristics @ Ta= 25 C unless otherwise specified Characteristic [Symbol | Min | Max | Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO -25 Vv Ic =-10 A, le =0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 Vv Ic = -1.0MA, Ip = 0 Emitter-Base Breakdown Voltage V(BR)EBO -4.0 Vv le=-10 A, Ic =0 Collector Cutoff Current IcBo -50 nA Ves = -20V, le = OV Emitter Cutoff Current lEBO -50 nA Vep = -3.0V, Ic = OV ON CHARACTERISTICS (Note 2) : 120 360 Ic = -2.0MA, Vce = -1.0V DC Current Gain Are 60 lo = -5OMA, Vee = -1.0V Collector-Emitter Saturation Voltage VcE(SAT) -0.40 V I = -50mA, Ip = -5.0MA Base- Emitter Saturation Voltage VBE(SAT) -0.95 V I = -50mA, Ip = -5.0MA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 4.5 pF Vop = -5.0V, f= 1.0MHz, Ip = 0 Input Capacitance Cibo 10 pF Vep = -0.5V, f = 1.0MHz, Ic = 0 : : Voce = 1.0V, Ic = -2.0mA, Small Signal Current Gain Nte 120 480 f= 1.0kHz : : Voe = -20V, Ic = -10MA, Current Gain-Bandwidth Product fr 250 MHz f= 100MHz ise Fi Voe= -5.0V, Io = -100 A, Noise Figure NF 4.0 dB Re=1.0k f= 1.0kHz Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s,dutycycle 2%.