MOTOROLA
SEMICONDUCTOR TECHNICAL DATA Order this document
by MM BF0201 NLT1/D
GREEN o‘a LINETM
aLow ~~~(~n) Small-Signal MOSFETS =
TMOS Sing16 N-Channel
Field Effect ~ansistors
Pan of the GreenLineTM Potifolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETS utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(~n) assures minimal
power loss and consewes energy, making this device ideal for use
in small power management circuitry. Typical applications are
de-de converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
oMiniature SOT–23 Surface Mount Package Saves Board Space ,~
II
,.
\*,,,
,R,$lyg,&;~’ Symbol Value Unit
‘, .,.
Drain–to–Source Voltage ..:3,;,,.
,/,, \*:,~~,lj~-
,:~.:,..’.~,,,4*.,vDSS 20 Vdc
VGS f20 Vdc
ID 300 mAdc
ID 240
IDM 750
Total Power Dissipation pD 225 mW
Operating and Stora@’~Jernp;rature Range TJ ,Tstg –55to 150 “c
Thermal Resist@c$#$~nction–t&Ambient ReJA 625 ‘cm
..,.>.,.
Maximum Ld@%@rnperature for Soldering Purposes, 1/8 from case for 10 seconds
.,.:, ~“,.e TL 260 ‘c
.... ,.-
,<!,,. ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMBF0201NLT1 T12 mm embossed tape 3000
MMBF0201NLT3 lY 12 mm embossed tape 10,000
eGreenLine is atrademark of Motorola, Inc.
HDTMOS is atrademark of Motorola, Inc. TMOS is aregistered trademark of Motorola, Inc.
Thermal Clad is aregistered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMBF0201 N/D)
@Motorola, Inc. 1995 @
MMBF0201NLTI
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Characteristic Symbol Min Typ IMax Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage v(BR)DSS 20 Vdc
(VGS =OVdc, ID =10 wA)
Zero Gate Voltage Drain Current
(VDS’= 16 Vdc, VGS =OVdc)
(VDS =16 Vdc, VGS =OVdc, TJ =125°C)
Gate–Body Leakage Current (VGS =*20 Vdc, VDS =O)
,. .
ON CHARACTERISTICSI1 )W,,
,,,,,:*C
Gate Threshold Voltage ...! .,.
vGS(th) 1.0 1.7
(VDS =VGS, iD =250 ~Adc)
Static Drain-to–Source On-Resistance rDS(on) Ohms
(VGS =10 Vdc, ID= 300 mAdc)
(VGS =4.5 Vdc, ID =100 mAdc)
Forward Transconductance (VDS =10 Vdc, ID =200 mAdc) 9FS mMhos
DYNAMIC CHARACTERISTICS !!,.;,.:
,~:,,,,{,,,ir
::!.t.,.
,a,.~‘,,,.,* .*-
Input Capacitance (VDS =5.0 V)
Ciss ..~. ‘“:~ ‘J 45 pF
Output Capacitance (VDS =5.0 V) Co:$gil$< >~: 25
,\..,,
Transfer Capacitance (VDG =5.0 V) ‘* ~s+””l 5.0
SWITCHING CHARACTERISTICS(2) $,<!~,<,:‘“
+:i~,,
+.,-+
TurwOn Delay Time .s>~s$ JI.
,~?w$$ td(on) 2.5 ns
.,.;
,.*
Rise Time (VDD =15 Vdc, ID =300 m~~’$ tr 2.5
Turn–Off Delay Time RL =50 *) ,‘it:~:~,~
,%$J\$*.,\..,y&, td(off) 15
,~t..,,
Fall Time “4*<.* tf
.>> 0.8
Gate Charge (See Figure 5) ,.,~
,,”$$4
t,$ ,!*QT “— 1400 pc
SOURCE-DRAIN DIODE CHARACTERISTICS !:l .“\.-,
,J::’\.~l/~h\..:<:+\.,
Continuous Current ::!
.jl?.:$”,. +,,~t~. Is
s!%,+,*”,’,.~0.3 A
Pulsed Current .:*:.X.}~\’v..
..*.
<.“.. ‘+ ]SM 0.75
.Li’;>,. ‘1;.’*!*.
Forward Voltage(2) J, ‘:*,,-..,;,{P:
-‘,.~1.. .,}.,, VSD 0.85
,,,, v
~,-.,,$?
(1) Pulse Test Pulse Width <300 US,:@’we <270.
(2) Switching characteristics are inde~,n~$nt of operating junction temperature.
~.+,.,, ..%.~.,,
.:\J,*<:.,
,/. ,
a
2Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION
MMBF0201 NLTI
FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Sutiace mount board layout is acritical portion of the total interface between the board and the package. With the
design. The footprint for the semiconductor packages must correct pad geometry, the packages will self align when
be the correct size to insure proper solder connection subjected to asolder reflow process.
The power dissipation of the SOT-23 is afunction ~$,~.,?
drain pad size. This can vary from the minimum pad ~@sF
soldering to a pad size given for maximum power dis:ipa~on.
Power dissipation for asurface mount device,~s dekrmined
by TJ(max), the maximum rated junction te@~p&$qtureof the
die, ROJA, the thermal resistance from t~@,*~e junction to
i:.,..
ambient, and the operating tempe~~~ TA. Using the
values provided on the data sheet f@.J&80T–23 package,
?:,,,.V.:f$>$
PD can be calculated as follow$;,+w,~, ‘“
.&.“*:\’-
..(~,>~
~~:,.,
:~~t,\$
The values fo,~w~~fiation are found in the maximum
ratings table qn t~&@fa sheet. Substituting these values into
the equatiQ@~;~~ambient temperature TA of 25°C, one can
calcula~~~t~’’;~dtier dissipation of the device which in this
.*,
case.~~~~~tiill iwatts.
. .
,b.}.$
.,kjl,.,,, .}
:,:;,,...,.$..., The 556°CM for the SOT–23 package assumes the use
.,,<.,>..>X,,.!
~.~,.
,.. of the recommended footprint on a glass epoxy printed circuit
board to achieve apower dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use aceramic substrate or an aluminum core board such as
Thermal Clad’”. Using aboard material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to ahigh temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
e
e
e
*
e
o
*
Always preheat the device.
The delta temperature between the preheat and soldering
should be 10O°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260”C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
Soldering adevice without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data 5
MMBF0201NLTI
TYPICAL ELECTRICAL CHARACTERISTICS
1.8 \II
1.6
1.4
1,2 /
1.0
0,8
0.6
-50 -25 0 25 50 75 100 125 150
TJ,JUNCTIONTEMPERATURE~C)
Figure 7. On-Resistance versus
Junction Temperature
i00
80
60
40
\
20
n
0.6 0.9 1.2 1.4
20
4Motorola Small–Signal Transistors, FETsand Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
“o 123456
VGS, GATE-TNOURCEVOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
1,5
I I I I I I I I I
MMBF0201 NLT1
-.
an “o 510 15 20
VGS, GATE-T&SOURCE VOLTAGE (VOLTS)
Figure 4. On-Resistance versus
Gate-to-Source Voltage
1.10
1.05 \.
1.00
:0.95
:0.90
~0,85
~0.80 \
p0.75
0.70
0.65
0.60-25 025 50 75 100 125 150
TEMPERATURE (“C)
Figure 6. Threshold Voltage Variance
Over Temperature
Motorola Small–Signal Transistors, FETs and Diodes Device Data 3
MMBF0201NLT1
PACKAGE DIMENSIONS
ISOT-2?. (*-236AB)
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Motorola -~tfie right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the s~#Iti~~ its products for any particular purpose, nor does Motorola assume any Kabihty arising out of the apphcation or use Ofany product or circuit,
an,~$~$ifi@lly disclaime any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vay in different
,~~a,~$. All operating parameters, incluting ‘Typicals” must be vatidated for each customer application by customer’s technical experts, Motorola does
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@MOTOROLA o2PHX34W6F+ PRINTEO IN USA &95 IMPERIAL LITHO 13980 6,000 SMALL SIGNAL YBAe~ MMBF0201 NLTIID
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