APTM20AM05F
APTM20AM05F– Rev 1 May, 2004
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OUT
VBUS
S1
G1 0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 200 V
Tc = 25°C 317
ID Continuous Drain Current Tc = 80°C 237
IDM Pulsed Drain current 1268
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 5 mW
PD Maximum Power Dissipation Tc = 25°C 1136 W
IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500 mJ
VDSS = 200V
RDSon = 5mW max @ Tj = 25°C
ID = 317A @ Tc = 25°C
Application
· Welding converters
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
· Motor control
Features
· Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Phase leg
MOSFET Power Module
APTM20AM05F
APTM20AM05F– Rev 1 May, 2004
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 200 V
VGS = 0V,VDS = 200V Tj = 25°C 500
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 2000
µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 158.5A 5
mW
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V
IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 27.4
Coss Output Capacitance 8.72
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.38
nF
Qg Total gate Charge 448
Qgs Gate – Source Charge 172
Qgd Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 300A 188
nC
Td(on) Turn-on Delay Time 28
Tr Rise Time 56
Td(off) Turn-off Delay Time 81
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 300A
RG = 1.2W 99
ns
Eon Turn-on Switching Energy u 1852
Eoff Turn-off Switching Energy v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2Ω 1820
µJ
Eon Turn-on Switching Energy u 2432
Eoff Turn-off Switching Energy v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2Ω 2124
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tc = 25°C 317
IS Continuous Source current
(Body diode)
Tc = 80°C 234 A
VSD Diode Forward Voltage VGS = 0V, IS = - 300A 1.3 V
dv/dt Peak Diode Recovery w 8 V/ns
Tj = 25°C 220
trr Reverse Recovery Time Tj = 125°C 420 ns
Tj = 25°C 4.28
Qrr Reverse Recovery Charge
IS = -300A
VR = 100V
diS/dt = 400A/µs
Tj = 125°C 11.6 µC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS £ - 300A di/dt £ 700A/µs VR £ VDSS Tj £ 150°C
APTM20AM05F
APTM20AM05F– Rev 1 May, 2004
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case 0.11 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
Package outline
APTM20AM05F
APTM20AM05F– Rev 1 May, 2004
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
9V
0
200
400
600
800
1000
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
I
D
, Drain Current (A)
VGS=15&10V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
200
400
600
800
23456789
VGS, Gate to Source Voltage (V)
I
D
, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
0 100 200 300 400
ID, Drain Current (A)
R
DS
(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 158.5A
0
40
80
120
160
200
240
280
320
25 50 75 100 125 150
TC, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM20AM05F
APTM20AM05F– Rev 1 May, 2004
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0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DSS
, Drain to Source Breakdown
Volta
g
e
(
Normalized
)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 158.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
DC line
10ms
1ms
100µs
1
10
100
1000
10000
1 10 100 1000
VDS, Drain to Source Voltage (V)
I
D
, Drain Current (A)
limited
by RDSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=40V
VDS=100V
VDS=160V
0
2
4
6
8
10
12
0 100 200 300 400 500
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=300A
TJ=25°C
APTM20AM05F
APTM20AM05F– Rev 1 May, 2004
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Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
90
50 150 250 350 450 550
ID, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100
µ
H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
50 150 250 350 450 550
ID, Drain Current (A)
t
r
and t
f
(ns)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100
µ
H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
50 150 250 350 450 550
ID, Drain Current (A)
E
on
and E
off
(mJ)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100
µ
H
Eon
Eoff
2
2.5
3
3.5
4
4.5
5
5.5
6
02.557.51012.515
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=133V
ID=300A
TJ=125°C
L=100µH
0
50
100
150
200
250
300
350
30 70 110 150 190 230 270
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=1.2Ω
TJ=125°C TJ=25°C
TJ=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
