CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree's CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package. FEATURES Package Type s: 440206 & 440223 PN's: CG2H40 045P & CG2H 40045F APPLICATIONS * Up to 4 GHz Operation * 2-Way Private Radio * 18 dB Small Signal Gain at 2.0 GHz * Broadband Amplifiers * 14 dB Small Signal Gain at 4.0 GHz * Cellular Infrastructure * 55 W Typical PSAT * Test Instrumentation * 60 % Efficiency at PSAT * Class A, AB, Linear amplifiers suitable for * 28 V Operation ber 2018 Rev 2.0 - Septem OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 120 Volts Conditions 25C Gate-to-Source Voltage VGS -10, +2 Volts 25C Storage Temperature TSTG -65, +150 C Operating Junction Temperature TJ 225 C Maximum Forward Gate Current IGMAX 15 mA 25C Maximum Drain Current IDMAX 6 A 25C Soldering Temperature2 TS 245 C 80 in-oz RJC 2.8 C/W TC -40, +150 C 1 Screw Torque Thermal Resistance, Junction to Case 3 Case Operating Temperature3,4 85C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CG2H40045F at PDISS = 56W. 4 See also, the Power Dissipation De-rating Curve on Page 8. Electrical Characteristics (TC = 25C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 14.4 mA Gate Quiescent Voltage VGS(Q) - -2.7 - VDC VDS = 28 V, ID = 400 mA Saturated Drain Current2 IDS 11.6 14.0 - A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 - - VDC VGS = -8 V, ID = 14.4 mA DC Characteristics Conditions 1 RF Characteristics3 (TC = 25C, F0 = 2.5 GHz unless otherwise noted) Small Signal Gain GSS 15 17 - dB VDD = 28 V, IDQ = 400 mA Power Output4 PSAT 47 55 - W VDD = 28 V, IDQ = 400 mA 52 62 - % VDD = 28 V, IDQ = 400 mA, POUT = PSAT VSWR - - 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 400 mA, POUT = 45 W CW Input Capacitance CGS - 16.6 - pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS - 6.3 - pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD - 0.6 - pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency5 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CG2H40045F-AMP 4 PSAT is defined as IG = 1.08 mA. 5 Drain Efficiency = POUT / PDC Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - Small Signal Gain and Input Return Loss of the CG2H40045F-AMP vs Frequency VDD = 28 V, IDQ = 400 mA Figure 2. - Gain, Efficiency, and Output Power vs Frequency measured in Amplifier Circuit CG2H40045F-AMP VDD = 28 V, IDQ = 400 mA Efficiency PSAT Gain Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3. - Gain and Efficiency vs Output Power measured in Amplifier Circuit CG2H40045F-AMP VDD = 28 V, IDQ = 400 mA, Freq = 2.5 GHz Single Tone CW Output Power vs Input Power measured in Amplifier Circuit CGH40045F-AMP 28V, IDQ = 400mA VDD =Tone Figure 4. - Single CW Output Power vs Input Power of measured in Amplifier Circuit CG2H40045F-AMP VDD = 28 V, IDQ = 400 mA 50 Output Power (dBm) 45 40 35 30 2.4GHz 2.5GHz 25 20 2.6GHz 5 10 15 20 25 Input Power (dBm) 30 Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CG2H40045 Rev 2.0 35 40 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Maximum Available Gain and K Factor of the CG2H40045 VDD = 28V,Gain IDQand = 400mA Figure 5. - Maximum Available K Factor of the CG2H40045 30 1.6 25 1.2 20 0.8 15 K Factor MAG (dB) VDD = 28 V, IDQ = 400 mA 0.4 Gmax K Factor 10 0.5 1.5 2.5 3.5 Frequency (GHz) 4.5 5.5 0 Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CG2H40045 Figure 6. - Simulated Minimum Noise Figure and INoise Resistance vs Frequency of the CG2H40045 VDD = 28V, DQ = 400mA VDD = 28 V, IDQ = 400 mA 2 40 Noise Resistance 1.5 30 1 20 0.5 10 0 0.5 1.5 2.5 3.5 Frequency (GHz) 4.5 Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CG2H40045 Rev 2.0 5.5 Noise Resistance (Ohms) Minimum Noise Figure (dB) Min Noise Figure 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Simulated Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 4.1 + j5.27 14.73 + j6.91 12.3 + j 7.6 750 2.9 + j 4.1 1000 2.7 + j0.8 9.2 + j1.3 1100 1.9 + j 3.1 9.2 + j6.2 1500 2.1 - j 2.5 6.0 + j4.3 1700 2.2- j2.0 6.5 + j2.3 1800 2.4 - j1.4 7.8 + j1.7 1900 2.8 - j1.8 6.5 + j0.6 2000 2.8 - j1.8 6.5 + j0.6 2100 2.5 - j2.7 5.4 + j0.2 3000 1.4 - j7.3 4.6 - j2.0 4000 2.4 - j11 4.4 - j3.5 Note 1. VDD = 28V, IDQ = 800mA in the 440193 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CG2H40045 Power Dissipation De-rating Curve CGH40045F CW Power Dissipation De-rating Curve 60 Power Dissipation (W) 50 40 30 Note 1 20 10 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CG2H40045-AMP Demonstration Amplifier Circuit Schematic CG2H40045-AMP Demonstration Amplifier Circuit Outline Note: The device slot is machined to different depths to support either pill or flanged versions Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CG2H40045-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1 CAP, 0.8pF, 0.1 pF, 0603 1 C2 CAP, 2.2pF, 0.1 pF, 0603 1 CAP, 10.0pF, +/-5%, 0603, ATC 3 C6,C13, C19 CAP, 470pF 5 %, 100 V, 0603, X7R 3 C7,C14,C20 CAP,33000PF, 0805,100V, X7R 3 CAP, 10UF, 16V, SMT, TANTALUM 1 C4,C11,C17 C8 C10 CAP, 8.2pF 5%, ATC100B 1 CAP, 1.0UF 10%, 100V, 1210, X7R 2 C5,C12,C18,C30,C31 CAP, 82.0pF, 5%, 0603 5 C16,C22 C15,C21 CAP, 33UF, 20%, G CASE 2 R2 RES, 1/16W, 0603, 100 Ohms 1% 1 R1 RES, 1/16W, 0603, 5.1 Ohms 1% 1 CONN, SMA, PANEL MOUNT JACK, FLANGE 2 CONN, HEADER, RT>PLZ .1CEN LK 9POS 1 PCB, RO4350B, Er = 3.48, h = 20 mil 1 CG2H40045 1 J2,J3 J1 Q1 CG2H40045-AMP Demonstration Amplifier Circuit Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CG2H40045 (Small Signal, VDS = 28 V, IDQ = 400 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 0.500 0.924 -171.10 9.020 83.83 0.012 -0.74 0.733 -175.20 0.600 0.924 -173.39 7.526 80.67 0.012 -2.80 0.736 -176.01 0.700 0.924 -175.16 6.456 77.77 0.012 -4.58 0.738 -176.61 0.800 0.924 -176.61 5.653 75.04 0.012 -6.20 0.740 -177.08 0.900 0.925 -177.85 5.027 72.44 0.012 -7.68 0.743 -177.48 1.000 0.925 -178.94 4.527 69.92 0.012 -9.06 0.745 -177.83 1.100 0.925 -179.93 4.118 67.47 0.012 -10.36 0.748 -178.15 1.200 0.925 179.15 3.779 65.08 0.012 -11.59 0.750 -178.46 1.300 0.926 178.29 3.492 62.74 0.012 -12.76 0.753 -178.76 1.400 0.926 177.47 3.247 60.45 0.012 -13.87 0.756 -179.06 1.500 0.926 176.68 3.035 58.19 0.012 -14.93 0.758 -179.37 1.600 0.927 175.91 2.851 55.97 0.012 -15.93 0.761 -179.69 1.700 0.927 175.15 2.690 53.78 0.012 -16.89 0.764 179.98 1.800 0.927 174.41 2.548 51.62 0.012 -17.79 0.767 179.64 1.900 0.928 173.66 2.423 49.49 0.011 -18.65 0.769 179.28 2.000 0.928 172.92 2.311 47.38 0.011 -19.46 0.772 178.91 2.100 0.928 172.18 2.211 45.30 0.011 -20.23 0.774 178.53 2.200 0.928 171.43 2.121 43.24 0.011 -20.95 0.777 178.12 2.300 0.928 170.67 2.041 41.20 0.011 -21.63 0.779 177.70 2.400 0.928 169.90 1.969 39.17 0.011 -22.27 0.781 177.27 2.500 0.928 169.12 1.905 37.17 0.011 -22.87 0.783 176.81 2.600 0.928 168.32 1.847 35.17 0.011 -23.43 0.785 176.34 2.700 0.928 167.51 1.795 33.19 0.011 -23.95 0.787 175.85 2.800 0.927 166.67 1.748 31.22 0.011 -24.44 0.788 175.34 2.900 0.927 165.82 1.707 29.25 0.011 -24.90 0.790 174.82 3.000 0.926 164.94 1.670 27.29 0.011 -25.32 0.791 174.27 3.200 0.925 163.09 1.609 23.37 0.011 -26.10 0.793 173.13 3.400 0.923 161.12 1.564 19.43 0.011 -26.81 0.794 171.90 3.600 0.921 158.99 1.533 15.44 0.011 -27.47 0.794 170.59 3.800 0.918 156.67 1.515 11.38 0.011 -28.13 0.793 169.19 4.000 0.914 154.13 1.510 7.20 0.011 -28.86 0.791 167.68 4.200 0.910 151.31 1.519 2.88 0.012 -29.69 0.787 166.06 4.400 0.904 148.17 1.541 -1.65 0.012 -30.72 0.783 164.31 4.600 0.897 144.63 1.577 -6.44 0.013 -32.03 0.777 162.41 4.800 0.888 140.59 1.630 -11.56 0.013 -33.71 0.769 160.34 5.000 0.877 135.92 1.701 -17.09 0.014 -35.87 0.759 158.07 5.200 0.864 130.47 1.791 -23.15 0.016 -38.66 0.747 155.55 5.400 0.848 124.02 1.905 -29.86 0.017 -42.23 0.732 152.73 5.600 0.828 116.27 2.045 -37.39 0.019 -46.76 0.715 149.54 5.800 0.804 106.83 2.212 -45.93 0.021 -52.46 0.693 145.87 6.000 0.775 95.17 2.407 -55.72 0.023 -59.58 0.668 141.58 Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CG2H40045 (Small Signal, VDS = 28 V, IDQ = 800 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 0.500 0.939 -172.50 8.967 84.35 0.600 0.939 -174.64 7.489 81.47 0.010 1.41 0.762 -177.28 0.010 -0.03 0.763 0.700 0.939 -176.32 6.432 -178.00 78.83 0.010 -1.23 0.764 -178.57 0.800 0.939 -177.71 0.900 0.939 -178.91 5.639 76.33 0.010 -2.28 0.765 -179.05 5.024 73.94 0.010 -3.21 0.767 1.000 0.939 -179.47 -179.98 4.532 71.62 0.010 -4.05 0.768 -179.85 1.100 1.200 0.939 179.05 4.131 69.36 0.010 -4.82 0.769 179.79 0.939 178.15 3.798 67.15 0.010 -5.54 0.770 179.44 1.300 0.939 177.29 3.518 64.97 0.009 -6.20 0.771 179.10 1.400 0.939 176.47 3.279 62.82 0.009 -6.81 0.773 178.77 1.500 0.939 175.67 3.073 60.70 0.009 -7.38 0.774 178.43 1.600 0.939 174.90 2.894 58.61 0.009 -7.90 0.775 178.09 1.700 0.938 174.13 2.737 56.54 0.009 -8.39 0.777 177.74 1.800 0.938 173.38 2.600 54.49 0.009 -8.83 0.778 177.38 1.900 0.938 172.63 2.478 52.45 0.009 -9.24 0.779 177.01 2.000 0.938 171.87 2.370 50.43 0.009 -9.61 0.780 176.64 2.100 0.938 171.12 2.274 48.42 0.009 -9.95 0.781 176.25 2.200 0.937 170.36 2.188 46.43 0.009 -10.25 0.782 175.85 2.300 0.937 169.59 2.111 44.44 0.009 -10.53 0.783 175.43 2.400 0.937 168.80 2.043 42.47 0.009 -10.77 0.784 175.00 2.500 0.936 168.01 1.981 40.50 0.009 -10.98 0.785 174.56 2.600 0.936 167.20 1.926 38.53 0.009 -11.17 0.785 174.10 2.700 0.935 166.37 1.877 36.57 0.009 -11.34 0.786 173.63 2.800 0.934 165.52 1.833 34.61 0.009 -11.49 0.786 173.14 2.900 0.934 164.65 1.795 32.65 0.009 -11.62 0.786 172.63 3.000 0.933 163.75 1.761 30.69 0.010 -11.74 0.786 172.11 3.200 0.931 161.87 1.705 26.74 0.010 -11.97 0.786 171.00 3.400 0.928 159.85 1.665 22.74 0.010 -12.20 0.784 169.82 3.600 0.925 157.66 1.640 18.67 0.010 -12.49 0.782 168.56 3.800 0.921 155.28 1.628 14.50 0.011 -12.89 0.779 167.20 4.000 0.917 152.67 1.630 10.19 0.011 -13.46 0.775 165.75 4.200 0.912 149.77 1.645 5.71 0.012 -14.26 0.770 164.17 4.400 0.905 146.53 1.675 1.00 0.012 -15.37 0.763 162.48 4.600 0.897 142.86 1.721 -4.00 0.013 -16.87 0.754 160.63 4.800 0.887 138.67 1.784 -9.36 0.014 -18.85 0.744 158.62 5.000 0.875 133.82 1.865 -15.16 0.015 -21.43 0.731 156.41 5.200 0.860 128.15 1.969 -21.52 0.017 -24.72 0.717 153.98 5.400 0.842 121.43 2.096 -28.57 0.019 -28.86 0.699 151.27 5.600 0.820 113.34 2.250 -36.47 0.021 -34.03 0.678 148.22 5.800 0.794 103.490 2.432 -45.404 0.023 -40.418 0.654 144.730 6 0.76376 91.356 2.6393 -55.605 0.025877 -48.247 0.6254 140.65 Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CG2H40045F (Package Type -- 440223) Product Dimensions CG2H40045P (Package Type -- 440206) Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CG2H40045F GaN HEMT Each CG2H40045P GaN HEMT Each CG2H40045F-TB Test board without GaN HEMT Each CG2H40045P-TB Test board without GaN HEMT Each CG2H40045F-AMP Test board with GaN HEMT installed Each CG2H40045P-AMP Test board with GaN HEMT installed Each Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CG2H40045 Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright (c) 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CG2H40045 Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf