1
Subject to change without notice.
www.cree.com/rf
CG2H40045
45 W, DC - 4 GHz RF Power GaN HEMT
Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efciency, high gain and wide bandwidth capabilities
making the CG2H40045 ideal for linear and compressed amplier circuits. The
transistor is available in a ange and pill package.
Rev 2.0 - September 2018
FEATURES
• Up to 4 GHz Operation
• 18 dB Small Signal Gain at 2.0 GHz
• 14 dB Small Signal Gain at 4.0 GHz
• 55 W Typical PSAT
• 60 % Efciency at PSAT
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Ampliers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear ampliers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Package Types: 440206 & 440223
PN’s: CG2H40045P & CG2H40045F
2CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 120 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 15 mA 25˚C
Maximum Drain Current1IDMAX 6 A 25˚C
Soldering Temperature2TS245 ˚C
Screw Torque τ80 in-oz
Thermal Resistance, Junction to Case3RθJC 2.8 ˚C/W 85˚C
Case Operating Temperature3,4 TC-40, +150 ˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CG2H40045F at PDISS = 56W.
4 See also, the Power Dissipation De-rating Curve on Page 8.
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 14.4 mA
Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 400 mA
Saturated Drain Current2IDS 11.6 14.0 – A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 14.4 mA
RF Characteristics3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Small Signal Gain GSS 15 17 – dB VDD = 28 V, IDQ = 400 mA
Power Output4PSAT 47 55 – W VDD = 28 V, IDQ = 400 mA
Drain Efciency5η52 62 – % VDD = 28 V, IDQ = 400 mA, POUT = PSAT
Output Mismatch Stress VSWR – – 10 : 1 Y
No damage at all phase angles,
VDD = 28 V, IDQ = 400 mA,
POUT = 45 W CW
Dynamic Characteristics
Input Capacitance CGS – 16.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS – 6.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD – 0.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CG2H40045F-AMP
4 PSAT is dened as IG = 1.08 mA.
5 Drain Efciency = POUT / PDC
3CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 1. - Small Signal Gain and Input Return Loss of
the CG2H40045F-AMP vs Frequency
VDD = 28 V, IDQ = 400 mA
Figure 2. - Gain, Efciency, and Output Power vs Frequency measured
in Amplier Circuit CG2H40045F-AMP
VDD = 28 V, IDQ = 400 mA
E󰀩ciency
Gain
PSAT
4CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 3. - Gain and Efciency vs Output Power
measured in Amplier Circuit CG2H40045F-AMP
VDD = 28 V, IDQ = 400 mA, Freq = 2.5 GHz
Figure 4. - Single Tone CW Output Power vs Input Power of
measured in Amplier Circuit CG2H40045F-AMP
VDD = 28 V, IDQ = 400 mA
20
25
30
35
40
45
50
5 10 15 20 25 30 35 40
Output Power (dBm)
Input Power (dBm)
Single Tone CW Output Power vs Input Power measured in
Amplifier Circuit CGH40045F-AMP
VDD = 28V, IDQ = 400mA
2.4GHz
2.5GHz
2.6GHz
5CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 5. - Maximum Available Gain and K Factor of the CG2H40045
VDD = 28 V, IDQ = 400 mA
Figure 6. - Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CG2H40045
VDD = 28 V, IDQ = 400 mA
0
0.4
0.8
1.2
1.6
10
15
20
25
30
0.5 1.5 2.5 3.5 4.5 5.5
K Factor
MAG (dB)
Frequency (GHz)
Maximum Available Gain and K Factor of the CG2H40045
VDD = 28V, IDQ = 400mA
Gmax
K Factor
0
10
20
30
40
0
0.5
1
1.5
2
0.5 1.5 2.5 3.5 4.5 5.5
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Frequency (GHz)
Simulated Minimum Noise Figure and Noise Resistance vs
Frequency of the CG2H40045
VDD = 28V, IDQ = 400mA
Min Noise Figure
Noise Resistance
6CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
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Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C
7CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Simulated Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 4.1 + j5.27 14.73 + j6.91
750 2.9 + j 4.1 12.3 + j 7.6
1000 2.7 + j0.8 9.2 + j1.3
1100 1.9 + j 3.1 9.2 + j6.2
1500 2.1 - j 2.5 6.0 + j4.3
1700 2.2- j2.0 6.5 + j2.3
1800 2.4 - j1.4 7.8 + j1.7
1900 2.8 - j1.8 6.5 + j0.6
2000 2.8 - j1.8 6.5 + j0.6
2100 2.5 - j2.7 5.4 + j0.2
3000 1.4 - j7.3 4.6 - j2.0
4000 2.4 - j11 4.4 - j3.5
Note 1. VDD = 28V, IDQ = 800mA in the 440193 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be used to
maintain amplier stability.
CG2H40045 Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
D
Z Source Z Load
G
S
40
50
60
Power Dissipation (W)
CGH40045F CW Power Dissipation De-rating Curve
0
10
20
30
0 25 50 75 100 125 150 175 200 225 250
Power Dissipation (W)
Maximum Case Temperature (°C)
Note 1
8CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CG2H40045-AMP Demonstration Amplier Circuit Schematic
CG2H40045-AMP Demonstration Amplier Circuit Outline
Note: The device slot is machined to different depths to support either pill or anged versions
9CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CG2H40045-AMP Demonstration Amplier Circuit Bill of Materials
Designator Description Qty
C1 CAP, 0.8pF, ± 0.1 pF, 0603 1
C2 CAP, 2.2pF, ± 0.1 pF, 0603 1
C4,C11,C17 CAP, 10.0pF, +/-5%, 0603, ATC 3
C6,C13, C19 CAP, 470pF ±5 %, 100 V, 0603, X7R 3
C7,C14,C20 CAP,33000PF, 0805,100V, X7R 3
C8 CAP, 10UF, 16V, SMT, TANTALUM 1
C10 CAP, 8.2pF ±5%, ATC100B 1
C15,C21 CAP, 1.0UF ±10%, 100V, 1210, X7R 2
C5,C12,C18,C30,C31 CAP, 82.0pF, ±5%, 0603 5
C16,C22 CAP, 33UF, 20%, G CASE 2
R2 RES, 1/16W, 0603, 100 Ohms 1% 1
R1 RES, 1/16W, 0603, 5.1 Ohms 1% 1
J2,J3 CONN, SMA, PANEL MOUNT JACK, FLANGE 2
J1 CONN, HEADER, RT>PLZ .1CEN LK 9POS 1
- PCB, RO4350B, Er = 3.48, h = 20 mil 1
Q1 CG2H40045 1
CG2H40045-AMP Demonstration Amplier Circuit
10 CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Package S-Parameters for CG2H40045
(Small Signal, VDS = 28 V, IDQ = 400 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
0.500 0.924 -171.10 9.020 83.83 0.012 -0.74 0.733 -175.20
0.600 0.924 -173.39 7.526 80.67 0.012 -2.80 0.736 -176.01
0.700 0.924 -175.16 6.456 77.77 0.012 -4.58 0.738 -176.61
0.800 0.924 -176.61 5.653 75.04 0.012 -6.20 0.740 -177.08
0.900 0.925 -177.85 5.027 72.44 0.012 -7.68 0.743 -177.48
1.000 0.925 -178.94 4.527 69.92 0.012 -9.06 0.745 -177.83
1.100 0.925 -179.93 4.118 67.47 0.012 -10.36 0.748 -178.15
1.200 0.925 179.15 3.779 65.08 0.012 -11.59 0.750 -178.46
1.300 0.926 178.29 3.492 62.74 0.012 -12.76 0.753 -178.76
1.400 0.926 177.47 3.247 60.45 0.012 -13.87 0.756 -179.06
1.500 0.926 176.68 3.035 58.19 0.012 -14.93 0.758 -179.37
1.600 0.927 175.91 2.851 55.97 0.012 -15.93 0.761 -179.69
1.700 0.927 175.15 2.690 53.78 0.012 -16.89 0.764 179.98
1.800 0.927 174.41 2.548 51.62 0.012 -17.79 0.767 179.64
1.900 0.928 173.66 2.423 49.49 0.011 -18.65 0.769 179.28
2.000 0.928 172.92 2.311 47.38 0.011 -19.46 0.772 178.91
2.100 0.928 172.18 2.211 45.30 0.011 -20.23 0.774 178.53
2.200 0.928 171.43 2.121 43.24 0.011 -20.95 0.777 178.12
2.300 0.928 170.67 2.041 41.20 0.011 -21.63 0.779 177.70
2.400 0.928 169.90 1.969 39.17 0.011 -22.27 0.781 177.27
2.500 0.928 169.12 1.905 37.17 0.011 -22.87 0.783 176.81
2.600 0.928 168.32 1.847 35.17 0.011 -23.43 0.785 176.34
2.700 0.928 167.51 1.795 33.19 0.011 -23.95 0.787 175.85
2.800 0.927 166.67 1.748 31.22 0.011 -24.44 0.788 175.34
2.900 0.927 165.82 1.707 29.25 0.011 -24.90 0.790 174.82
3.000 0.926 164.94 1.670 27.29 0.011 -25.32 0.791 174.27
3.200 0.925 163.09 1.609 23.37 0.011 -26.10 0.793 173.13
3.400 0.923 161.12 1.564 19.43 0.011 -26.81 0.794 171.90
3.600 0.921 158.99 1.533 15.44 0.011 -27.47 0.794 170.59
3.800 0.918 156.67 1.515 11.38 0.011 -28.13 0.793 169.19
4.000 0.914 154.13 1.510 7.20 0.011 -28.86 0.791 167.68
4.200 0.910 151.31 1.519 2.88 0.012 -29.69 0.787 166.06
4.400 0.904 148.17 1.541 -1.65 0.012 -30.72 0.783 164.31
4.600 0.897 144.63 1.577 -6.44 0.013 -32.03 0.777 162.41
4.800 0.888 140.59 1.630 -11.56 0.013 -33.71 0.769 160.34
5.000 0.877 135.92 1.701 -17.09 0.014 -35.87 0.759 158.07
5.200 0.864 130.47 1.791 -23.15 0.016 -38.66 0.747 155.55
5.400 0.848 124.02 1.905 -29.86 0.017 -42.23 0.732 152.73
5.600 0.828 116.27 2.045 -37.39 0.019 -46.76 0.715 149.54
5.800 0.804 106.83 2.212 -45.93 0.021 -52.46 0.693 145.87
6.000 0.775 95.17 2.407 -55.72 0.023 -59.58 0.668 141.58
11 CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Package S-Parameters for CG2H40045
(Small Signal, VDS = 28 V, IDQ = 800 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
0.500 0.939 -172.50 8.967 84.35 0.010 1.41 0.762 -177.28
0.600 0.939 -174.64 7.489 81.47 0.010 -0.03 0.763 -178.00
0.700 0.939 -176.32 6.432 78.83 0.010 -1.23 0.764 -178.57
0.800 0.939 -177.71 5.639 76.33 0.010 -2.28 0.765 -179.05
0.900 0.939 -178.91 5.024 73.94 0.010 -3.21 0.767 -179.47
1.000 0.939 -179.98 4.532 71.62 0.010 -4.05 0.768 -179.85
1.100 0.939 179.05 4.131 69.36 0.010 -4.82 0.769 179.79
1.200 0.939 178.15 3.798 67.15 0.010 -5.54 0.770 179.44
1.300 0.939 177.29 3.518 64.97 0.009 -6.20 0.771 179.10
1.400 0.939 176.47 3.279 62.82 0.009 -6.81 0.773 178.77
1.500 0.939 175.67 3.073 60.70 0.009 -7.38 0.774 178.43
1.600 0.939 174.90 2.894 58.61 0.009 -7.90 0.775 178.09
1.700 0.938 174.13 2.737 56.54 0.009 -8.39 0.777 177.74
1.800 0.938 173.38 2.600 54.49 0.009 -8.83 0.778 177.38
1.900 0.938 172.63 2.478 52.45 0.009 -9.24 0.779 177.01
2.000 0.938 171.87 2.370 50.43 0.009 -9.61 0.780 176.64
2.100 0.938 171.12 2.274 48.42 0.009 -9.95 0.781 176.25
2.200 0.937 170.36 2.188 46.43 0.009 -10.25 0.782 175.85
2.300 0.937 169.59 2.111 44.44 0.009 -10.53 0.783 175.43
2.400 0.937 168.80 2.043 42.47 0.009 -10.77 0.784 175.00
2.500 0.936 168.01 1.981 40.50 0.009 -10.98 0.785 174.56
2.600 0.936 167.20 1.926 38.53 0.009 -11.17 0.785 174.10
2.700 0.935 166.37 1.877 36.57 0.009 -11.34 0.786 173.63
2.800 0.934 165.52 1.833 34.61 0.009 -11.49 0.786 173.14
2.900 0.934 164.65 1.795 32.65 0.009 -11.62 0.786 172.63
3.000 0.933 163.75 1.761 30.69 0.010 -11.74 0.786 172.11
3.200 0.931 161.87 1.705 26.74 0.010 -11.97 0.786 171.00
3.400 0.928 159.85 1.665 22.74 0.010 -12.20 0.784 169.82
3.600 0.925 157.66 1.640 18.67 0.010 -12.49 0.782 168.56
3.800 0.921 155.28 1.628 14.50 0.011 -12.89 0.779 167.20
4.000 0.917 152.67 1.630 10.19 0.011 -13.46 0.775 165.75
4.200 0.912 149.77 1.645 5.71 0.012 -14.26 0.770 164.17
4.400 0.905 146.53 1.675 1.00 0.012 -15.37 0.763 162.48
4.600 0.897 142.86 1.721 -4.00 0.013 -16.87 0.754 160.63
4.800 0.887 138.67 1.784 -9.36 0.014 -18.85 0.744 158.62
5.000 0.875 133.82 1.865 -15.16 0.015 -21.43 0.731 156.41
5.200 0.860 128.15 1.969 -21.52 0.017 -24.72 0.717 153.98
5.400 0.842 121.43 2.096 -28.57 0.019 -28.86 0.699 151.27
5.600 0.820 113.34 2.250 -36.47 0.021 -34.03 0.678 148.22
5.800 0.794 103.490 2.432 -45.404 0.023 -40.418 0.654 144.730
6 0.76376 91.356 2.6393 -55.605 0.025877 -48.247 0.6254 140.65
12 CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Dimensions CG2H40045F (Package Type — 440223)
Product Dimensions CG2H40045P (Package Type — 440206)
13 CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Ordering Information
Order Number Description Unit of Measure Image
CG2H40045F GaN HEMT Each
CG2H40045P GaN HEMT Each
CG2H40045F-TB Test board without GaN HEMT Each
CG2H40045P-TB Test board without GaN HEMT Each
CG2H40045F-AMP Test board with GaN HEMT installed Each
CG2H40045P-AMP Test board with GaN HEMT installed Each
14 CG2H40045 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639