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Hittite Microwave Corporation
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
1
HMC772LC4
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
General Description
Features
Functional Diagram
Noise Figure: 1.8 dB
Gain: 15 dB
Output IP3: +25 dBm
P1dB Output Power: +13 dBm
50 Ohm Matched Input/Output
Supply Voltage: +4V @ 45 mA
24 Lead Ceramic 4x4mm SMT Package: 16mm²
Electrical Specications, TA = +25° C, Vdd= +4V, Idd = 45 mA*
Typical Applications
This HMC772LC4 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
The HMC772LC4 is a GaAs MMIC HEMT Low Noise
Wideband Amplier which operates between 2 and
12 GHz. The amplier provides 15 dB of gain, 1.8 dB
noise gure up to 12 GHz and output IP3 of +25 dBm,
while requiring only 45 mA from a +4V supply voltage.
The Psat output power of up to +15 dBm enables the
LNA to function as a LO driver for many of HIttite’s
balanced, I/Q or image reject mixers. The HMC772LC4
also features I/Os that are DC blocked and internally
matched to 50 Ohms, making it ideal for SMT based
high capacity microwave radio applications. The
HMC772LC4 is housed in a RoHS compliant 4x4 mm
QFN leadless ceramic package.
Parameter Min. Typ. Max. Units
Frequency Range 2 - 12 GHz
Gain 14 15 dB
Gain Variation over Temperature 0.01 dB / °C
Noise Figure 1.8 2.5 dB
Input Return Loss 15 dB
Output Return Loss 15 dB
Output Power for 1 dB Compression 13 dBm
Output Third Order Intercept (IP3) 25 dBm
Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)* 45 mA
* Adjust Vgg between -1 to 0.3V to achieve Idd = 45mA typical.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
2
HMC772LC4
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
Output Psat vs. Temperature
Gain vs. Temperature
Output Return Loss vs. Temperature
Output P1dB vs. Temperature
10
12
14
16
18
20
1 3 5 7 9 11 13 15
+25 C
+85 C
- 40 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1 3 5 7 9 11 13 15
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
1 3 5 7 9 11 13 15
+25 C
+85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
1 3 5 7 9 11 13 15
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1 3 5 7 9 11 13 15
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
1 3 5 7 9 11 13 15
+25 C
+85 C
- 40 C
Psat (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
3
HMC772LC4
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
Power Compression @ 12 GHz
Gain, Noise Figure & Power vs.
Supply Voltage @ 12 GHz
Output IP3 vs. Temperature
Reverse Isolation vs. Temperature
18
20
22
24
26
28
30
1 3 5 7 9 11 13 15
+25 C
+85 C
- 40 C
IP3 (dBm)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1 3 5 7 9 11 13 15
+25 C
+85 C
- 40 C
ISOLATION (dB)
FREQUENCY (GHz)
-5
0
5
10
15
20
-20 -15 -10 -5 0 5
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
3
6
9
12
15
18
21
24
0
1
2
3
4
5
6
7
8
3.5 4 4.5
Gain
P1dB
Noise Figure
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Vdd (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
4
HMC772LC4
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Drain Bias Voltage +5V
Drain Bias Current 60 mA
RF Input Power 5 dBm
Gate Bias Voltage -1 to 0.3 V
Continuous Pdiss (T = 85 °C)
(derate 5.8 mW/°C above 85 °C) 0.55 W
Thermal Resistance
(Channel to ground paddle) 172 °C/W
Channel Temperature 180 °C
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [2]
HMC772LC4 Alumina, White Gold over Nickel MSL3 [1] H772
XXXX
[1] Max peak reow temperature of 260 °C
[2] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
5
HMC772LC4
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
Pin Number Function Description Interface Schematic
1, 2, 4 - 7, 12 - 15,
17 - 19, 24 GND These pins and ground paddle
must be connected to RF/DC ground.
3RFIN This pin is AC coupled
and matched to 50 Ohms.
8Vgg
Gate control for amplier. Please follow “MMIC Amplier
Biasing Procedure” application note. See application circuit
for required external components.
9Vdd Power Supply Voltage for the amplier. See application circuit
for required external components.
10, 11, 20 - 23 N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
16 RFOUT This pin is AC coupled
and matched to 50 Ohms.
Pin Descriptions
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
6
HMC772LC4
v02.0514
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
Item Description
J1, J2 PCB Mount 2.92mm K-Connector
J3 - J5 DC Pin
C1, C4 100 pF Capacitor, 0402 Pkg.
C2, C5 1000 pF Capacitor, 0603 Pkg.
C3, C6 4.7 µF Capacitor, Tantalum
U1 HMC772LC4 Amplier
PCB [2] 126357 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
List of Materials for Evaluation PCB 126359 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
Evaluation PCB
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Analog Devices Inc.:
HMC772LC4 126359-HMC772LC4 HMC772LC4TR HMC772LC4TR-R5