OL DE Bss7scas OO171e9 o 3875081 GE SOLID STATE Die 17129 op Tr 33-73 High Speed Power Transistors 2N5671, 2N5672 High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors For Switching and Amplifier Applications in Military, Industrial and Commercial Equipment Features: Maximum Sate-Area-of-Operation Curves - Ig limit line beginning at 24 V = Fast Turn-On Time - ton = 0.5 ps max. atle =15A File Number 383 TERMINAL DESIGNATIONS RCA Types 2N5671 and 2N5672 are epitaxial silicon n-p-n transistors having high current and high power handling capability and fast switching speed. The 2N5672 is similar to the 2N5671 except that It has higher voltage ratings and lower leakage currents, Thesa devices are especially suitable for switching-control amplifiers, power gates, switching regulators, power-switching circuits, converters, inverters, control circuits. Other recommended applications included DC-RF amplifiers and power oscillators. These types are supplied in the JEDEC TO-204AA hermetic steel package. __ *Formerly Dev. Types TA7323 and TA7323A, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: * COLLECTOR-TO-BASE VOLTAGE, Vaso .-sseercerer ener errs ectrec tert teen ener e ees COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: With base open, Vceo(SUS) ....eeeeeseeeesee rere ren rte eres ers tsee nesses see teen ee eee With external base-to-amitter resistance (Rae) = 50 01, Voen(SUS) 1c sce ceeccencerre cere With external base-to-emitter resistance (Ree) <= 502 & Vee=-1.5, Voex(SUS} ... cere eee * BMITTER-TO-BASE VOLTAGE, Vego ss eesereecerrscrecsererscccsesrrcessencccs esses oe * COLLECTOR CURRENT, Io..eecece cece cece esc e erence renee cnet seers eee ee ee eee ee eee * BASE CURRENT, le .....ccecec cen sceeeerencnuretsrec eran ee rares seers cee e sees ee ee ret * TRANSISTOR DISSIPATION, Ps: At case temperatures up to 25C and Vce up to 24V At case temperatures up to 26C and Vce above 24V At case temperatures above 25C and Voce above 24 Vi... cece e eer ner e en eenereee * TEMPERATURE RANGE: Storage and Operating (Junction) .....--esseeeeeereeecreers sree eres teree sees eee * PIN TEMPERATURE (During Soldering): At distances = 1/32 in. from seating plane for 105 MAX. .-..-seesereerererssee ser cees oe In accordance with JEDEC registration data format (JS-6, RFD-1). Cc (FLANGE) 9268-27516 JEDEC TO-204AA 2NS671 2N5672 120 150 0 120 110 140 120 150 7 7 30 30 10 10 140 140 See Fig. 1 See Figs. 1&2 -65 to +200 230 < Ss ppe<c<< 132 _- ee ne etcetera OL DE @38?5081 00147130 & 3875081 G E SOLID STATE D1E 171300 0p 7 S337 (3 High-Speed Power Transistors 2N5671, 2N5672 ELECTRICAL CHARACTERISTICS, Case Temperature (Tc) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS oc oc . oc CHARACTERISTIC sympo. | collector | EmMtet | current Type Tyee luntts Volta or Base (A) 2N5671 2N5672 altage() | Vottage (V) Vee |ce | Yee! Yee {lc ile ip | Min. | Max. Min. | Max. IcEo - wo }-|- |-|- fo} - | wm) - | 10 | mA - -|- -l-|-|- 9] - - Collector-Cutoff Current loEy ne = fibyctoyoyc Plots ma ceyV | | to) - |-15}-]- |-| - {| 5] - | 10 | mA (Tg=150 C) * | Emitter-Cutoff Current feBo - | -}7] - Jol-}|-]- } 1] - | io | mA Collectot-to- Emitter Sustaining Voltage: Voegsus) | - - | - | - [02/- 70 790) - | 107) - | V With base open With external base-to-emitter _ a . _ . al a} _ resistance (Rog) 5002 VoeR(sus) 0.2 0 } no 140 v With base-emitter junction reverse biased Voex(sus) | - - | - j-ns5 loz} - | - fi207] - | Wot) - v & Rp 500 * | Base-to-Emitter Saturation Voltage Vogelsat) - - - ~ [isp- ple] or | 1s - | 15 v Base-lo-Emitter Voltage VBE - 5 - - {]- |-| - | 164 - 1.6 Vv * 1 Collector-to-Emitter Saturation Voltage Voetsat) | - | - | - | - [asp - [bz] - | 075] - [075] * | OC Forward-Current h - 2 - ~ |15}- | - | 20 29} 20 | id Transfet Ratio FE - 5 - - |@;-}-|2a - 0 | - Second-Breakdown - | w}- | - |-|- [- see] - | 58] - ] A Collector Current Ise? With base forward biased - | H ]- | - [=]-]- 7%] - 7 Op - TA Second- Breakdown Energy With base reverse biased Esp - - - -4 }16[- | - | 20 - 20 - | mJ Rgg = 202, L = 180 ui Gain-Bandwidth Product fr ~ wf - - |2{-|]-[50]7 - 50 - | MHZ Output Capacitance (At 1 MHz) Cob 10 - - - J-{0 ]-|[ - | 900] - 900 | oF 1p, = *) Saturated Switching Tutn-On Time Vee=| - | - | = a - (Delay Time + Rise Time) bon 30V 18 Ka 05 0.5 | Hs 2 Voc= By | Saturated Switching ts ay -|- |] - [sl- |] - ] is] - | Ble Storage Time Bar| 12 Ip, =| | Saturated Switching te ocr - |- | - | u/- i - | o5| - | 05] ps Fall Time ie Thermal Resistance 0 (Juncton-o-Case) A6 - {| ow] - | - fosf-|-] - | vast - [125 | cw @CAUTION: The sustaining voltages Yoeo(ss): Voer(ses) and Voex(ses) MUST NOT be measured on @ curve trace. Bs iy Is def Ined as the current at which second breakdown occurs at a specified collector voltage with the emitter-base junction forward blased for transistor operation in the active region. Pulsed; les, non-repetitive pulse. d Es/p Is defined as the energy at which second breakdown occurs under specified reverse bias conditions. Esp 2 BLI2, where L is a series load or leakage inductance and | is the peak collector current, * In accordance with JEDEC registration data format (JS-6, RFD-1) a 133 01 DE pse7soan 0017131 3 Tt 3875081 G E SOLID STATE o1 17131 Do TSSI3 High-Speed Power Transistors 2N5671, 2N5672 CASE TEMPERATURE (Tc)#25C (FOR Tc ABOVE 25, DERATE LINEARLY) 4 Ic MAX. (CONTINUOUS) COLLECTOR AMPERES (Ic) CEO MAX.=120 V (2N5672) Vv MAX.= 90 V (2N5671) 2 4 6 86 @ 4 6 8 Io 100 2 \900 COLLECTOR-TO-EMITTER VOLTS (Veep 9205-15650 Fig. 1 - Maximum operating areas for types 2N5671 & 2N5672. SZCS-20129 0.0 I COLLECTOR CURRENT (Zcl~A sy. sesaser Fig. 2 - Dissipation derating curves for types 2N5671 & 2N5672. Fig. 3 - Typical dc beta characteristics for types 2N5671 & 2N6672. 134 <_--_______. G E SOLID STATE. OLE D mm 3875081 OOL?L32 TM 7 <33-L> THIS PAGE INTENTIONALLY LEFT BLANK rave le a i oo Ob DE 3s7sce 22. 3875081 GE SOLID STATE 1 0017133 1 > T-BSS tHign speed Power Transistors 2N5671, 2N5672 COLLECTOR-TO-EMITTER VOLTAGE CASE TEMPERATURE (Tcl 25 C 8 BASE CURRENT ([g)mA COLLECTOR AMPERES (Tc) 4 BASE-TO-EMITTER VOLTAGE (Vge)-- 92S -F5652 9205-12438RI Fig. 4 ~ Typical input characteristics for types 2N5671 & 2N5672. Fig. 5 - Typical output characteristics for types 2N5671 & 2N5672. COLLECTOR=TO-EMITTER VOLTS 3 Ic #12 51p*-12 TIME MICROSECONDS COLLECTOR AMPERES (Ic) BASE- (Vee gecs-i24a2 COLLECTOR AMPERES (Ic) 32C5-12429R2 Fig. 6 - Typical transfer characteristics for types 2N5671 & 2N&672. Fig. 7 - Typical saturated switching characteristics for types 2N5671 & 2N5672. ' { | i