MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. These state-of-the-art devices have the following features: * * * * * * Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 Short Heat Sink Tab Manufactured - Not Sheared! Similar in Size to the Industry Standard TO-220 Package http://onsemi.com SCHOTTKY BARRIER RECTIFIER 10 AMPERES 45 VOLTS 1 4 3 Mechanical Characteristics * Case: Epoxy, Molded, Epoxy Meets UL94, VO * Weight: 1.7 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * * 4 1 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Available in 24 mm Tape and Reel, 800 units per 13 reel by adding a "T4" suffix to the part number Marking: MBRB1045 Device Meets MSL1 Requirements ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V) 3 D2PAK CASE 418B PLASTIC MARKING DIAGRAM MBRB1045 YWW MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 Volts Average Rectified Forward Current (Rated VR) TC = 135C IF(AV) 10 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 135C IFRM 20 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 Amps Operating Junction and Storage Temperature Range Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2003 May, 2003 - Rev. 4 MBRB1045 = Specific Device Code Y = Year WW = Work Week ORDERING INFORMATION Device TJ, Tstg - 65 to +150 C dv/dt 10000 V/s 1 Package Shipping MBRB1045 D2PAK 50 Units/Tube MBRB1045T4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB1045/D MBRB1045 THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case (Note 1) - Junction to Ambient (Note 1) Symbol Value Unit RJC RJA 1.0 50 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 Amps, TJ = 125C) (IF = 20 Amps, TJ = 125C) (IF = 20 Amps, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) IR Volts 0.57 0.72 0.84 mA 15 0.1 1. When mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% 100 100 TJ = 150C TJ = 150C 70 100C 50 30 30 20 20 10 7.0 5.0 3.0 2.0 1.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.1 25C 100C 50 25C iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 70 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 2 1.4 MBRB1045 100 100 125C 10 IR , REVERSE CURRENT (mA) IR , REVERSE CURRENT (mA) TJ = 150C 100C 1.0 75C 0.1 25C 150C 10 125C 1.0 100C 75C 0.1 0.01 0.01 25C 0.001 0.001 0 10 5.0 15 20 25 30 35 40 45 0 50 15 25 20 30 35 40 45 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current 50 1400 1200 C, CAPACITANCE (pF) IFSM , PEAK HALF-WAVE CURRENT (AMPS) 10 VR, REVERSE VOLTAGE (VOLTS) 200 100 70 50 1000 30 800 600 400 200 0 20 2.0 3.0 5.0 7.0 10 20 30 50 0 70 100 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Maximum Surge Capability Figure 5. Typical Capacitance 18 RATED VOLTAGE APPLIED 16 14 dc 12 SQUARE WAVE 10 8.0 6.0 4.0 2.0 0 130 10 NUMBER OF CYCLES AT 60 Hz PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) 1.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 5.0 135 140 145 150 155 TC, CASE TEMPERATURE (C) 50 10 9.0 dc 8.0 7.0 SQUARE WAVE 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Figure 6. Current Derating, Case, RJC = 1.0 C/W 2.0 4.0 6.0 8.0 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Forward Power Dissipation http://onsemi.com 3 18 MBRB1045 INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.33 8.38 0.42 10.66 0.24 6.096 0.04 1.016 0.12 3.05 inches 0.67 17.02 mm D2PAK POWER DISSIPATION The power dissipation of the D2PAK is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the D2PAK package, PD can be calculated as follows: PD = into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 2.5 watts. PD = 150C - 25C = 2.5 watts 50C/W The 50C/W for the D2PAK package assumes the recommended drain pad area of 158K mil2 on FR-4 glass epoxy printed circuit board to achieve a power dissipation of 2.5 watts using the footprint shown. Another alternative is to use a ceramic substrate or an aluminum core board such as Thermal Clad. By using an aluminum core board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values GENERAL SOLDERING PRECAUTIONS * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 5 seconds. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. * Due to shadowing and the inability to set the wave height to incorporate other surface mount components, the D2PAK is not recommended for wave soldering. http://onsemi.com 4 MBRB1045 RECOMMENDED PROFILE FOR REFLOW SOLDERING graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 -189 C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 9 shows a typical heating profile for use when soldering the D2PAK to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the STEP 1 PREHEAT ZONE 1 RAMP" 200C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205 TO SPIKE" SOAK" 219C 170C PEAK AT SOLDER 160C JOINT 150C 100C 140C 100C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50C TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 9. Typical Solder Heating Profile for D2PAK http://onsemi.com 5 MBRB1045 PACKAGE DIMENSIONS D 2 PAK CASE 418B-04 ISSUE H C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. V W -B4 A 1 2 3 -TSEATING PLANE K W J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE H M T B M N R P U L M DIM A B C D E F G H J K L M N P R S V S L L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 3: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR M F F F VIEW W-W 1 VIEW W-W 2 VIEW W-W 3 http://onsemi.com 6 STYLE 5: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE MBRB1045 Notes http://onsemi.com 7 MBRB1045 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 8 MBRB1045/D