Product Bulletin OPI150TX September 1996 (SP ,OPTEK Optically Coupled Isolators Types OPI150TX, OPI150TXV WHITE ODOT _INCICATES POSITIVE LEADS REO END INDICATES LED -020 (0.51) -015 (0.38) NOM 0) =a, (2) a oF 3.17 (80.52) -900 (22.86) _ NOM 3.15 (80.01) * 400 (10.16) 4 NOM .050 (1.27) -100 (2.54) Jj, 320 (8.13) 300 (7.62) | -100 (2.54 +050 (1.27) * CATHODE LEAD. OTHER LEAGS ARE .06O (1.52) NGM LONGER. DIMENSIONS ARE IN INCHES (MILLIMETERS) ** THIS DIMENSION IS CONTROLLED AT THE HOUSING SURFACE Features e High current transfer ratio e 50kV electrical isolation e Base contact lead for conventional transistor biasing * Components processed to Opteks screening program patterned after MIL-PRF-19500 for TX and TXV devices. Description The OPI150TX and OPI150TXV are optically coupled isolators, consisting of a gallium aluminum arsenide infrared light emitting diode component (OP235TX or OP235TXV) and optically coupled to an NPN silicon phototransistor component (OP804TX or OP804TXV) by means of a light pipe and sealed in a high dielectric plastic housing. This series is designed for applications requiring very high voltage isolation between input and output. High reliability processing is performed in accordance with MIL-PRF-19500 for both the infrared light emitting diode and the NPN silicon phototransistor at the component level. Typical screeing and lot acceptance tests are provided on page 13-4. Absolute Maximum Ratings (Ta = 25 C unless otherwise noted) Input-to-Output Voltage .. 2.0... cece ne ee nee e eas +50 kvpc Storage Temperature Range ............ 0. cece eee eenee -65 C to +150 C Operating Temperature Range -65 C to +125 C Lead Soldering Temperature[1/16 inch (1.6 mm) from case for 5 sec. with soldering WOM]. cece eee n cere e ence tent eeneeeteurttnnanes 240C Input Diode Continuous Forward Current ........0 0.0. c cc cece cence eee e nee eaes 100 mA Reverse Voltage... 0. ccc cee cece e eee ne ee ten eenenaes 2.0V Power Dissipation. ...00.0. 00.0. ccc e cee ceccececeueeeeucneenees 200 mw?) Output Photosensor Continuous Collector Current... 00.0... cc cece eect e eee nn ees 50 mA Collector-Emitter Voltage... 0... cece ccc eee eee c eee e ee ennas 50V Emitter-Base Voltage... ccc cence cree eevee eens 7.0V Collector-Base Voltage... 0... ccc ccc cc cee e ence neneaneees 50V Power Dissipation... 0.0.0.0... 0c ccc cece cee eee eee e eee eeannes 250 mw?) Notes: (1) Measured with input and output leads shored together in air with maximum relative humidity of 50%. (2) Derate linearly 2.00 mW/ C above 25 C. (3) Derate linearly 2.50 mW/C above 25 C. (4) Methanol or isopropanol are recommended as cleaning agents. Schematic Met ye (3) | I 17 (4) (2) @ r ioe (S) OPI150 Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 13-50 (214) 323-2200 Fax (214) 323-2396 Types OPI150TX, OPIT50TXV Electrical Characteristics (Ta = 25 C unless otherwise noted) SYMBOL | PARAMETER | MIN | TYP | MAX | UNITS TEST CONDITIONS Input Diode Ve Forward Voltage 10} 14] 17 Vs jlF=30mA 12/16) 1.9 Vs [Ir =30 mA, Ta =-55C 09 | 1.15} 15 V jle = 30 mA, Ta = 100C Ir Reverse Current , 0.1 10 wA |VR=2.0V Output Photosensor Viarjceo |Collector-Emitter Breakdown Voltage 50 80 Vs jic = 1.0 mA, tg = 0, IF = 0 Ver)eso | Emitter-Base Breakdown Voltage 7.0 ; 110 Vs tle = 100 vA, Ic = 0, IF = 0 Viar)jcBo |Collector-Base Breakdown Voltage 50 | 10.0 Vs |ic = 100 pA, te = 0, IF = 0 S e IcEO Collector-Emitter Dark Current 0.2 | 100 | nA |Vce=10.0V, Ip=0, IF =0 r 5 10 | 100! pA |VceE = 10.0 V, Is =0, Ir =0, Ta = 100C a IcBo Collector-Base Dark Current 0.1 10 nA |Vcp = 10.0 V, le = 0, IF = 0 Coupled IC(ON) On-State Collector Current 1.0 mA jiVceE=5V,!le=0,lF=10mMmA 0.6 mA |Vce =5 V, Ip =0, IF = 10 MA, Ta = -55C | 0.6 mA |Vce=5V, Ip =0, Ir = 10 mA, Ta = 100C} VceEsat) |Collector-Emitter Saturation Voltage 0.20 | 0.30 Vo jlc = 1.0 mA, ip = 0, IF = 16.0 MA Viso isolation Voltage (Input-to-Output) 50.0 kV _|See Note 1 tr Output Rise Time 8.0 | 15.0 us |Vcc =10.0V, lc = 2.0 mA, Ri = 1002 te Output Fall time 8.0 | 15.0 us {Vcc = 10.0 V, Ic = 2.0 mA, RL = 100 Q (5) Measurement is taken during last 500 1s of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 13-51