Continental Device India Limited Data Sheet Page 1 of 3
TIP120, 121, 122 NPN PLASTIC POWER TRANSISTORS
TIP125, 126, 127 PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS 120 121 122
125 126 127
Collector-base voltage (open emitter) VCBO max. 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 60 80 100 V
Collector current ICmax. 5.0 A
Total power dissipation up to TC = 25°C Ptot max. 65 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 3 A; IB = 12 mA VCEsat max. 2.0 V
D.C. current gain
IC = 0.5 A; VCE = 3 V hFE min. 1.0
RATINGS (at TA=25°C unless otherwise specified) 120 121 122
125 126 127
Collector-base voltage (open emitter) VCBO max. 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 60 80 100 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
O
O
K
N
L
FE
C
DIM MIN. MAX.
All dim insions in m m .
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
12
3
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
Boca Semiconductor Corp.
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Continental Device India Limited Data Sheet Page 2 of 3
Collector current ICmax. 5.0 A
Collector current (peak) ICM max. 8 A
Base current IBmax. 120 mA
Total power dissipation up to TC = 25°C Ptot max. 65 W
Derate above 25°C max 0.52
W/
°
C
Total power dissipation up to TA = 25°C Ptot max. 2 W
Derate above 25°C max 0.016
W/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150 º
C
THERMAL RESISTANCE
From junction to ambient Rth j–a 62.5 °
C/W
From junction to case Rth j–c 1.92 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 120 121 122
125 126 127
Collector cutoff current
IE = 0; VCB = 60 V ICBO max. 0.2 – – mA
IE = 0; VCB = 80 V ICBO max. – 0.2 – mA
IE = 0; VCB = 100 V ICBO max. – – 0.2 mA
IB = 0; VCE = 30V ICEO max. 0.5 – – mA
IB = 0; VCE = 40V ICEO max. – 0.5 – mA
IB = 0; VCE = 50V ICEO max. – – 0.5 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 2.0 mA
Breakdown voltages
IC = 100 mA; IB = 0 VCEO(sus)* min. 60 80 100 V
IC = 1 mA; IE = 0 VCBO min. 60 80 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 3.0 A; IB = 12 mA VCEsat* max. 2.0 V
IC = 5.0 A; IB = 20 mA VCEsat* max. 4.0 V
Base-emitter on voltage
IC = 3A; VCE = 3V VBE(on)* max. 2.5 V
D.C. current gain
IC = 0.5A; VCE = 3V hFE* min. 1.0
IC = 3A; VCE = 3V min. 1.0
Small signal current gain
IC = 3A; VCE = 4V; f = 1 MHz |hfe| min. 4.0
Output capacitance at f = 0.1 MHz
IE = 0; VCB = 10V PNP Comax. 300 pF
NPN Comax. 200 pF
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
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Boca Semiconductor Corp.
BSC
