AP9987GH/J RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge Single Drive Requirement Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS 80V RDS(ON) 90m ID 15A G S Description G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9987GJ) are available for low-profile applications. G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 80 V VGS I @T =100 Gate-Source Voltage +25 V ID@TC=25 Continuous Drain Current, VGS @ 10V 15 A Continuous Drain Current, VGS @ 10V 9 A IDM Pulsed Drain Current 50 A Total Power Dissipation 34.7 W Linear Derating Factor 0.28 W/ D C PD@TC=25 1 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 62.5 Rthj-a Maximum Thermal Resistance, Junction-ambient 110 Data and specifications subject to change without notice 3.6 Units /W /W /W 1 200908192 AP9987GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 80 - - - 0.09 - VGS=10V, ID=10A - - 90 m VGS=4.5V, ID=7A - - 105 m VGS=0V, ID=250uA , I =1mA BV /T Breakdown Voltage Temperature Coefficient Reference to 25 RDS(ON) Static Drain-Source On-Resistance2 DSS j D Max. Units V V/ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=5V, ID=10A - 15 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125 C) VDS=64V ,VGS=0V - - 250 uA Gate-Source Leakage VGS=+25V, VDS=0V - - +100 nA ID=10A - 11 18 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=64V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC 2 td(on) Turn-on Delay Time VDS=40V - 8 - ns tr Rise Time ID=10A - 12 - ns td(off) Turn-off Delay Time RG=3.3 tf - 19 - ns Fall Time ,V R =4 - 3 - ns Ciss Input Capacitance VGS=0V - 980 1570 pF Coss Output Capacitance VDS=25V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.7 Min. Typ. IS=10A, VGS=0V - - 1.2 V GS=10V D Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 33 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 44 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9987GH/J 30 30 10V 7 .0V 5.0V 4.5V 20 V G =3.0V 10 20 V G =3.0V 10 0 0 0 3 6 9 0 12 3 9 12 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.9 ID=7A T C =25 o C I D = 10 A V G =10V Normalized RDS(ON) 1.6 140 RDS(ON) (m ) 6 V DS , Drain-to-Source Voltage (V) 180 10V 7 .0V 5.0V 4.5V T C =150 o C ID , Drain Current (A) ID , Drain Current (A) T C =25 o C 100 1.3 1.0 0.7 trr 60 0.4 2 4 6 8 10 -50 0 50 100 o V GS , Gate-to-Source Voltage (V) Qrr 150 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 T j =150 o C 6 Normalized VGS(th) (V) IS(A) 8 T j =25 o C 4 1.2 0.8 2 0.4 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9987GH/J f=1.0MHz 16 10000 12 V DS = 4 0V V DS = 50 V V DS = 64 V C iss 1000 C (pF) VGS , Gate to Source Voltage (V) I D = 10 A 8 100 C oss 4 C rss 10 0 0 5 10 15 20 1 25 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100.0 Operation in this area limited by RDS(ON) 100us ID (A) 10.0 1ms 1.0 10ms 100ms DC o T C =25 C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 Qrr 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V QG 20 T j =25 o C 4.5V T j =150 o C QGS QGD 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4