NTE5511 thru NTE5513
Silicon Controlled Rectifier (SCR)
5 Amp
Description:
The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are in-
tended for use in power–control and power–switching applications. These devices are available in
a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating
of 5A (rms value) at a case temperature of +75°C.
Features:
DDesigned Especially for High–Volume Systems
DReadily Adaptable for PC Boards and Metal
Heat Sinks
DLow Switching Losses
DHigh di/dt and dv/dt Capabilities
DShorted Emitter Gate–Cathode Construction
DForward and Reverse Gate Dissipation Ratings
DAll–Diffused Construction Assures Exceptional
Uniformity and Stab ility of Characteristics
DDirect–Soldered Internal Construction Assures
Exceptional Resistance to Fatigue
DSymmetrical Gate–Cathode Construction Pro-
vides Uniform Current Density, Rapid Electrical
Conduction, and Efficient Heat Dissipation
DAll–Welded Construction and Hermetic Sealing
DLow Leakage Currents, Forward and Reverse
DLow Forward Voltage Drop at High Current
Levels
DLow Thermal Resistance
Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency
between 50Hz and 400Hz, and with Resistive or Inductive Load)
Transient Peak Reverse Voltage (Non–Repetitive), VRM (non–rep)
NTE5511 330V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5512 660V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5513 700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Voltage (Repetitive), VRM (rep)
NTE5511 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5512 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5513 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Blocking Voltage (Repetitive), VFBOM (rep)
NTE5511 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5512 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5513 700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average DC Forward Current, IF(av)
(TC = +75°C mounted on heat sink, conduction angle or 180°) 3.2A. . . . . . . . . . . . . . . . . . . .
RMS Forward Current (TC = +75°C mounted on heat sink), IFRMS 5A. . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge Current (For one cycle of applied voltage), iFM(surge) 60A. . . . . . . . . . . . . . . . . . . . . . . . .
Sub–Cycle Surge (Non–Repetitive, for a period of 1ms to 8.3ms), I2t 15A2sec. . . . . . . . . . . . . . . . . .
Rate of Change of Forward Current (Note 1), di/dt 200A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Power (Peak, Forward, or Reverse, for 10µs duration, Note 2), PGM 13W. . . . . . . . . . . . . . . .
Average Gate Power (Note 2), PGAV 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Case Temperature Range, TC–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5µs rise time
Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is
permissible.