MBR1535CT - MBR1560CT — 15 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR1535CT - MBR1560CT Rev. 1.1.1 1
September 2013
MBR1535CT - MBR1560CT
15 A Schottky Barrier Rectifiers
Features
Low Power Loss, High Efficiency
High Surge Capacity
Metal Silicon Junction, Majority Carrier Conduction
High Current Capacity, Low Forward Voltage Drop
Guard Ring for Over-V oltage Protection (OVP)
Applications
Low-Voltage
High-Frequency Inverters
Free Wheeling
Polarity Prot e cti on
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresse s ab ove the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Marking Package Packing Method
MBR1535CT MBR1535CT TO-220 3L RailMBR1545CT MBR1545CT
MBR1560CT MBR1560CT
Symbol Parameter Value Units
1535CT 1545CT 1560CT
VRRM Maximum Repetitive Reverse Voltage 35 45 60 V
IF(AV) Average Rectified Forw ard Current
.375 inch Lead Length at TA = 105°C 15 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 150 A
TSTG Storage Temperature Range -65 to +175 °C
TJOperating Junction Temperature Range -65 to +150 °C
TO-220AB
12
3
+
PIN1
PIN3 CASE
PIN2
Descriptions
This center tap MBR Schottky rectifier is optimal for sec-
ondary rectification and free wheeling application for
high efficiency DC to DC convertor design, which fea-
tures very low forward voltage drop and low leakage cur-
rent.
MBR1535CT - MBR1560CT — 15 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR1535CT - MBR1560CT Rev. 1.1.1 2
Thermal Characteristics
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units
PDPower Dissipation 41.7 W
RθJA Thermal Resistance, Junction to Ambient 60 °C/W
RθJL Thermal Resistance, Junction to Lead 3.0 °C/W
Symbol Parameter Value Units
1535CT 1545CT 1560CT
VFMaximum Forward Voltage, per
Leg
IF = 7.5 A, TC = 25°C0.75
V
IF = 7.5 A, TC = 125°C0.57
0.65
IF = 15 A, TC = 25°C0.84
IF = 15 A, TC = 125 °C0.72
IRMaximum Reverse Current at
Rated VRRM, per Leg TA = 25°C0.11.0
mA
TA = 125°C 15.0 50.0
IRRM Peak Repetitive Reverse Surge Current, per Le g
2.0 μs Pulse Width, f = 1.0 kHz 1.0 0.5 A
MBR1535CT - MBR1560CT — 15 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR1535CT - MBR1560CT Rev. 1.1.1 3
Typical Performance Characteristics
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs. Reverse Voltage
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
0 25 50 75 100 125 150 175
0
5
10
15
20
25
Average Rectified Forward Current, IF [A]
A m bient Tem p erature [oC]
MBR1535CT - MBR1560CT — 15 A Schottky Barrier Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR1535CT - MBR1560CT Rev. 1.1.1 4
Physical Dimensions
Figure 7. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE)
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obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf.
TO-220 3L
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I65
®