ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
4500
V
IF(AV)M =
1400
A
IFSM =
25×103
A
V(T0) =
1.2
V
rT =
0.32
mΩ
VDC-link
=
2200
V
Fast Recovery Diode
5SDF 14H4505
Doc. No. 5SYA1110-02 Oct. 06
• Patented free-floating silicon technology
• Low on-state and switching losses
• Optimized for use as freewheeling diode in GTO
converters with low DC-link voltages
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
Maximum rated values 1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tvj = 125°C, Note 1 4500 V
Permanent DC voltage for 100 FIT
failure rate VDC-link Ambient cosmic radiation at sea level in open
air. (100% Duty) 2200 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak reverse current IRRM VR = VRRM, Tvj = 125°C 50 mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below 0 °C
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force Fm 36 40 44 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 200 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.83 kg
Housing thickness H 25.9 26.4 mm
Surface creepage distance DS 30 mm
Air strike distance Da 20 mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
5SDF 14H4505
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 2 of 7
On-state
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Max. average on-state
current IF(AV)M Half sine wave, TC = 85 °C
1400
A
Max. RMS on-state current I
F(RMS)
2200
A
Max. peak non-repetitive
surge current IFSM
25×103
A
Limiting load integral I2t
tp = 10 ms, Tvj = 125°C, VR = 0 V
3.13×106
A2s
Max. peak non-repetitive
surge current IFSM
60×103
A
Limiting load integral I2t
tp = 1 ms, Tvj = 125°C, VR = 0 V
1.8×106
A2s
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VF IF = 2500 A, Tvj = 125°C 2 V
Threshold voltage V(T0) 1.2 V
Slope resistance rT Tvj = 125°C
IF = 400...4000 A 0.32 mΩ
Turn-on
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Peak forward recovery
voltage VFRM dIF/dt = 500 A/µs, Tvj = 125°C
30 V
Turn-off
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Reverse recovery current IRM
1000 A
Reverse recovery charge Qrr
3700 µC
Turn-off energy Err
di/dt = 300 A/µs, IFQ = 1000 A,
Tj = 125°C, VRM = 4500 V,
CS = 3 µF (GTO snubber circuit)
1.6 J
5SDF 14H4505
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 3 of 7
Thermal
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Operating junction
temperature range Tvj -40 125 °C
Storage temperature range T
stg -40 125 °C
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) Double-side cooled
Fm = 36...44 kN 12 K/kW
Rth(j-c)A Anode-side cooled
Fm = 36...44 kN 24 K/kW
Rth(j-c)C Cathode-side cooled
Fm = 36...44 kN 24 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 36...44 kN 3 K/kW
Rth(c-h) Single-side cooled
Fm = 36...44 kN 6 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ith c)-th(j ∑
=
i
τ
i 1 2 3 4
Rth i(K/kW)
7.440 2.000 1.840 0.710
τi(s) 0.4700 0.0910 0.0110 0.0047
Fig. 1 Transient thermal impedance junction-to-case
5SDF 14H4505
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 4 of 7
5
0
0
0
4000
3000
2000
1000
00
1
2
V
(
V
)
F
3
4
IF
(A)
25°C
125°C
m
a
x
.
typ
.
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Surge on-state current vs. pulse length. Half-
sine wave
Fig. 4 Upper scatter range of turn-off energy per
pulse vs. turn-off current Fig. 5 Upper scatter range of turn-off energy per
pulse vs reverse current rise rate
5SDF 14H4505
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 5 of 7
Fig. 6 Upper scatter range of repetitive reverse
recovery charge vs reverse current rise rate. Fig. 7 Upper scatter range of reverse recovery
current vs reverse current rise rate
Fig. 8 Forward recovery vs. turn on di/dt (max.
values)
5SDF 14H4505
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1110-02 Oct. 06 page 6 of 7
VFR
dIF/dt
IF (t)
VF (t)
tfr
tfr (typ) 10 µs
VF(t), IF (t)
t
VRM
VR (t)
IF (t)
IRM
-dIF/dt
QRR
IR (t)
VF (t)
Fig. 9 General current and voltage waveforms
Li
LLoad
DUT
VDC-link
IF
RS
DS
CS
Fig. 10 Test circuit.
5SDF 14H4505
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1110-02 Oct. 06
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 11 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise
Related documents:
Doc. Nr Titel
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
