Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com Single IGBTMOD™
NX-Series Module
600 Amperes/1200 Volts
112/10 Rev. 1
QIS1260015 Preliminary
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of one IGBT Transistor
in a single configuration with a
reverse connected rectifier grade
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Rectifier Grade
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
QIS1260015 is a 1200V (VCES),
600 Ampere Single IGBTMOD™
Power Module.
Outline Drawing and Circuit Diagram
Th
TH1
(1)
TH2
(2)
G1(15)
E1(16)
C(22)
E(23)E(24)
C(48)C(47)
NTC
DETAIL "B"
A
D
E
FJ J
AR
Z
AA
AB
B
AH
AJ
AX
AW
AL
AM
AK
AE
AD
AS
AN AQ
AF
AG
AT
AU
AV
AP
G
H
P
C
X
T
T
S
S
Q
R
Q
N
V
U
U
W
AC (4 PLACES)
M
KKL
L
Y
(4 PLACES)
DETAIL "A"
DETAIL "B"
DETAIL "A"
12 345678910111213141516171819202122
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
Dimensions Inches Millimeters
A 5.98 152.0
B 2.44 62.0
C 0.67 17.0
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.89 99.0
H 3.72 94.5
J 0.53 13.5
K 0.15 3.8
L 0.28 7.25
M 0.30 7.75
N 1.95 49.54
P 0.9 22.86
Q 0.55 14.0
R 0.87 22.0
S 0.67 17.0
T 0.48 12.0
U 0.24 6.0
V 0.16 4.2
W 0.37 6.5
X 0.83 21.14
Y M6 M6
Dimensions Inches Millimeters
Z 1.53 39.0
AA 1.97±0.02 50.0±0.5
AB 2.26 57.5
AC 0.22 Dia. 5.5 Dia.
AD 0.67+0.04/-0.02 17.0+1.0/-0.5
AE 0.51 13.0
AF 0.27 7.0
AG 0.03 0.8
AH 0.81 20.5
AJ 0.12 3.0
AK 0.14 3.5
AL 0.21 5.4
AM 0.49 12.5
AN 0.15 3.81
AP 0.05 1.15
AQ 0.025 0.65
AR 0.29 7.4
AS 0.24 6.2
AT 0.17 Dia. 4.3 Dia.
AU 0.10 Dia. 2.5 Dia.
AV 0.08 Dia. 2.1 Dia.
AW 0.06 1.5
AX 0.49 12.5
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
2
Preliminary
12/10 Rev. 1
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol QIS1260015 Units
Power Device Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M6 Main Terminal Screws — 40 in-lb
Module Weight (Typical) — 330 Grams
Baseplate Flatness, On Centerline X, Y (See Below) — ±0 ~ +100 µm
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO 2500 Volts
Inverter Sector
Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, TC = 90°C)*1,*5,*9 IC 600 Amperes
Peak Collector Current (Pulse)*4 ICM 1200 Amperes
Maximum Collector Dissipation (TC = 25°C)*1,*5 PC 3785 Watts
Emitter Currentt (TC = 25°C)*1,*5,*9 IE*3 600 Amperes
Peak Emitter Current (Pulse)*4 IEM*3 1200 Amperes
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*9 Use both of each main terminal (collector and emitter) to connect external wiring.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
23
24
48
47
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0
0
0
0
26.7
46.1
71.6
84.9
98.1
38.1
Dimensions in mm (Tolerance: ±1mm)
IGBT FWDi NTC Thermistor
Chip Location (Top View)
66.7
50.6
CHIP LOCATION (TOP VIEW)BASEPLATE FLATNESS
MEASUREMENT POINT
HEATSINK SIDE
– : CONCAVE
+ : CONVEX
– : CONCAVE
X
Y
+ : CONVEX
HEATSINK SIDE
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3
Preliminary
12/10 Rev. 1
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Inverter Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 6 7 8 Volts
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 μA
Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C*6 — 2.0 2.6 Volts
IC = 600A, VGE = 15V, Tj = 125°C*6 — 2.2 — Volts
IC = 600A, VGE = 15V, Tj = 150°C*6 — 1.9 — Volts
Input Capacitance Cies — — 100 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 9.0 nF
Reverse Transfer Capacitance Cres — — 2.0 nF
Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V — 3000 — nC
Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 600A, — — 660 ns
Load Turn-on Rise Time tr VGE = ±15V, — — 190 ns
Switch Turn-off Delay Time td(off) RG = 2.2Ω, IE = 600A, — — 700 ns
Time Turn-off Fall Time tf Inductive Loas Switching Operation — — 600 ns
Emitter-Collector Voltage VEC*3 IE = 600A, VGE = 0V, Tj = 25°C*6 — 1.0 1.2 Volts
IE = 600A, VGE = 0V, Tj = 125°C*6 — 0.9 1.1 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Module Lead Resistance Rlead Main Termnals-Chip (Per Switch) — 0.6 — mΩ
Thermal Resistance, Junction to Case*1 Rth(j-c)Q Per IGBT — — 0.033 °C/W
Thermal Resistance, Junction to Case*1 Rth(j-c)D Per FWDi — — 0.028 °C/W
Contact Thermal Resistance*1 Rth(c-f) Thermal Grease Applied — 0.015 — °C/W
(Case to Heatsink) (Per 1 Module)*2
Internal Gate Resistance RGint TC = 25°C 0.7 1.0 1.3 Ω
TC = 125°C 1.4 2.0 2.6 Ω
External Gate Resistance RG 1.0 — 10 Ω
NTC Thermistor Sector, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R100 = 493Ω –7.3 — +7.8 %
B Constant B(25/50) Approximate by Equation*9 — 3375 — K
Power Dissipation P25 TC = 25°C — — 10 mW
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*9 B(25/50) = In( R25)/( 1 – 1 ) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K],
R50 T25 T50
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4
Preliminary
12/10 Rev. 1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
100102
103
102
101
10-1
100
101
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
VGE = 0V
Cies
Coes
Cres
IC = 1200A
IC = 600A
IC = 240A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
0 2 4 6 8 10
0
VGE =
20V
10
11
12
13
15
9
Tj = 25°C
1200
800
1000
400
200
600
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
4
3
0
2
1
01200800 1000400200 600
VGE = 15V
Tj = 25°C
Tj = 125°C
10-1
COLLECTOR CURRENT, IC, (AMPERES)
104
101102
103
101
102
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
tf
103
GATE RESISTANCE, RG, (Ω)
104
100101
103
102
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
td(off) td(on)
tr
VCC = 600V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
tf
102
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
(INVERTER PART)
20
0
16
12
8
4
0
1000 2000 40003000 5000
VCC = 600V
VCC = 400V
IC = 600A
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
103
100101
102
100
101
VCC = 600V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
102
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
Eon
Eoff
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
Eon
Eoff
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
101102
101
100
103
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
5
Preliminary
12/10 Rev. 1
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.033°C/W
(IGBT)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')