PRODUCT: ZEN056V115A24LS PolyZen DOCUMENT: SCD27719 REV LETTER: B REV DATE: JULY 26,2016 PAGE NO.: 1 OF 8 Polymer Enhanced Zener Diode Micro-Assemblies Specification Status: Released GENERAL DESCRIPTION Littelfuse PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable protection against multi-Watt fault events without the need for multi-Watt heat sinks. The Zener diode used for voltage clamping in a PolyZen micro-assembly was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and diode currents are large. An advanced feature of the PolyZen micro-assembly is that the Zener diode is thermally coupled to a resistively nonlinear, polymer PTC (positive temperature coefficient) layer. This PTC layer is fully integrated into the device, and is electrically in series between VIN and the diode clamped VOUT. This advanced PTC layer responds to either extended diode heating or overcurrent events by transitioning from a low to high resistance state, also known as "tripping". A tripped PTC will limit current and generate voltage drop. It helps to protect both the Zener diode and the follow on electronics and effectively increases the diode's power handling capability. The polymer enhanced Zener diode helps protect sensitive portable electronics from damage caused by inductive voltage spikes, voltage transients, incorrect power supplies and reverse bias. These devices are particularly suitable for portable electronics and other low-power DC devices. BENEFITS Stable Zener diode helps shield downstream electronics from overvoltage and reverse bias Trip events shut out overvoltage and reverse bias sources Analog nature of trip events minimizes upstream inductive spikes Minimal power dissipation requirements Single component placement FEATURES Overvoltage transient suppression Stable VZ vs fault current Time delayed, overvoltage trip Time delayed, reverse bias trip Multi-Watt power handling capability Integrated device construction RoHS Compliant TARGET APPLICATIONS DC power port protection in portable electronics DC power port protection for systems using barrel jacks for power input Internal overvoltage & transient suppression DC output voltage regulation TYPICAL APPLICATION BLOCK DIAGRAM Power Supply PolyZen Protected Electronics (External or Internal) 2 VIN + 1 PolyZen Device VOUT 3 (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26,2016 GND Regulated Output RLoad Protected downstream electronics littelfuse.com PRODUCT: ZEN056V115A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27719 REV LETTER: B REV DATE: JULY 26,2016 PAGE NO.: 2 OF 8 CONFIGURATION INFORMATION Pin Configuration (Top View) 2 VIN Recommended Pad Dimensions GND 0.94 mm (0.037") 2.21 mm (0.087") 1 3 0.33 mm (0.013") 0.94 mm (0.037") VOUT 0.56 mm (0.022") 2.88 mm (0.1135") 0.56 mm (0.022") PIN DESCRIPTION Pin Number 1 2 3 Pin Name VIN GND VOUT Pin Function VIN. Protected input to Zener diode. GND VOUT. Zener regulated voltage output BLOCK DIAGRAM Polymer PTC VIN Zener Diode VOUT GND DEFINITION of TERMS IPTC IFLT IOUT Trip Event Trip Endurance Current flowing through the PTC portion of the circuit RMS fault current flowing through the diode Current flowing out the VOUT pin of the device A condition where the PTC transitions to a high resistance state, thereby significantly limiting IPTC and related currents, and significantly increasing the voltage drop between VIN and VOUT. Time the PTC portion of the device remains both powered and in a tripped state. (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26,2016 IOUT IPTC VIN VOUT IFLT GND littelfuse.com PRODUCT: ZEN056V115A24LS PolyZen DOCUMENT: SCD27719 REV LETTER: B REV DATE: JULY 26,2016 PAGE NO.: 3 OF 8 Polymer Enhanced Zener Diode Micro-Assemblies GENERAL SPECIFICATIONS Operating Temperature Storage Temperature -40 to +85C -40 to +85C ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified) VZ4 (V) Izt4 (A) Min Typ Max 5.45 5.6 5.75 0.1 IHOLD5 @ Leakage Current R Typ6 (Ohms) 20C (A) 1.15 VInt Max8 (V) Test Voltage Max Current (mA) 5.25 10 0.15 R1Max7 (Ohms) 0.18 VINT Max (V) 24V IFLT Max9 Tripped Power Dissipation10 Max Test Current (A) IFLT Max (A) Test Voltage (V) Value (W) Test Voltage (V) 3A +10 -40 +24 -16V 1.0 24 Note 1: Electrical characteristics determined at 25C unless otherwise specified. Note 2:This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact Littelfuse Circuit Protection directly. Note 3:Specifications developed using 1.0 ounce 0.045" wide copper traces on dedicated FR4 test boards. Performance in your application may vary. Note 4:Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request. Note 5:IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip event at the specified temperature. Specification assumes I FLT (current flowing through the Zener diode) is sufficiently low so as to prevent the diode from acting as a heat source. Testing is conducted with an "open" Zener. Note 6:R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature. Note 7:R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow soldering. Note 8:VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is defined as the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a "shorted" load (VOUT = 0V). VINT Max is a survivability rating, not a performance rating. Note 9:IFLT Max: IFLT Max relates to the stead state current flowing through the diode portion of the PolyZen device in a fault condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot from 3 lots) survived 100 test cycles. RMS fault currents above I FLT Max may permanently damage the diode portion of the PolyZen device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. "Test voltage" is defined as the voltage between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through the diode. IFLT Max is a survivability rating, not a performance rating. Note 10:The power dissipated by the device when in the "tripped" state, as measured on Littelfuse test boards (see note 3). Note 11:Specifications based on limited qualification data and subject to change. (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26,2016 littelfuse.com PRODUCT: ZEN056V115A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27719 REV LETTER: B REV DATE: JULY 26,2016 PAGE NO.: 4 OF 8 MECHANICAL DIMENSIONS Length L Width W Height H Length Diode Height Diode Min 3.85 mm (0.152") 3.85 mm (0.152") 1.4mm (0.055") Ld - Hd - Offset O1 - Offset O2 - Typical 4 mm (0.16") 4 mm (0.16") 1.7 mm (0.067") 3.0 mm (0.118") 1.0 mm (0.039") 0.6 mm (0.024") 0.7 mm (0.028") Max 4.15 mm (0.163") 4.15 mm (0.163") 2.0 mm (0.081") - SOLDER REFLOW RECOMMENDATIONS: Classification Reflow Profiles Profile Feature Average Ramp-Up Rate (Tsmax to Tp) Preheat * Temperature Min (Tsmin) * Temperature Max (Tsmax) * Time (tsmin to tsmax) Time maintained above: * Temperature (TL) * Time (tL) Peak/Classification Temperature (Tp) Time within 5 C of actual Peak Temperature (tp) Ramp-Down Rate Time 25 C to Peak Temperature (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26,2016 Pb-Free Assembly 3 C/second max. 150 C 200 C 60-180 seconds 217 C 60-150 seconds 260 C 20-40 seconds 6 C/second max. 8 minutes max. littelfuse.com PRODUCT: ZEN056V115A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27719 REV LETTER: B REV DATE: JULY 26,2016 PAGE NO.: 5 OF 8 PACKAGING Packaging Tape & Reel ZEN056V115A24LS 3,000 Standard Box 15,000 Reel Dimensions for PolyZen Devices Amax = 330 Nmin = 102 W1 = 8.4 W2 = 11.1 Matte Finish These Area Nmin Amax Taped Component Dimensions for PolyZen Devices (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26,2016 littelfuse.com PRODUCT: ZEN056V115A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27719 REV LETTER: B REV DATE: JULY 26,2016 PAGE NO.: 6 OF 8 V (V) or I (A) TYPICAL CHARACTERISTICS Typical Fault Response: ZEN056V115A24LS 20V, 3.5A Current Limited Source (IOUT = 0) 20 Vin (V) 18 16 Vout (V) 14 I FLT (A) 12 10 8 6 4 2 0 -0.02 0.02 0.06 0.10 0.14 0.18 Time (s) Pulse IV (300uSec Pulse) Pulse IV (300uSec Pulse) 10 ZEN056VxxxAxxLS 7 Current: IFLT (A) Voltage: V OUT (V) 8 6 5 4 3 5 0 -5 2 1 (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26,2016 0.1 0.01 0.001 0.0001 0.00001 Current: IFLT (A) ZEN056VxxxAxxLS -10 -2 0 2 4 Voltage: V OUT (V) 6 8 littelfuse.com PRODUCT: ZEN056V115A24LS PolyZen DOCUMENT: SCD27719 REV LETTER: B REV DATE: JULY 26,2016 PAGE NO.: 7 OF 8 Polymer Enhanced Zener Diode Micro-Assemblies Time to Trip Vs IFLT RMS (IOUT = 0) 100 VOUT Peak Vs IFLT RMS (IOUT = 0) Time To Trip (Sec) VOUT Peak (V) 8 7.5 7 6.5 6 5.5 ZEN056V115A24LS 5 ZEN056V115A24LS 10 1 0.1 0.01 0 2 4 6 IFLT RMS(A) 8 10 0 ZENxxxV115A24LS Time To Trip (Sec) VOUT (V) 8 10 1 -0.4 -0.6 -0.8 -1 -1.2 ZENxxxV115A24LS 0.1 0.01 0.001 -50 -40 -30 -20 IFLT RMS(A) -10 0 -50 Temperature Effect on Ihold (IFLT = 0) 2.00 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 -40 -30 -20 IFLT RMS (A) -10 0 Time to Trip Vs IPTC (IFLT = 0) 10 ZENxxxV115A24LS Time To Trip (Sec) IHold (A) 4 6 IFLT RMS (A) Time to Trip Vs IFLT (IOUT = 0) VOUT Peak Vs IFLT (IOUT = 0) 0 -0.2 2 ZENxxxV115A24LS 1 0.1 0.01 0.001 0 -40 -20 0 20 40 60 80 100 10 20 30 IPTC RMS (A) 40 Ambient Temperature (C) (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26,2016 littelfuse.com PRODUCT: ZEN056V115A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27719 REV LETTER: B REV DATE: JULY 26,2016 PAGE NO.: 8 OF 8 Temperature Effect on RTyp 0.4 RTyp (Ohms) ZENxxxV115A24LS 0.3 0.2 0.1 0 20 40 60 80 Ambient Temperature (C) Materials Information ROHS Compliant ELV Compliant Pb-Free Halogen Free* HF * Halogen Free refers to: Br900ppm, Cl900ppm, Br+Cl1500ppm. Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, lifesustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26,2016 littelfuse.com